JPH0296910A - Thin film magnetic head - Google Patents
Thin film magnetic headInfo
- Publication number
- JPH0296910A JPH0296910A JP24905888A JP24905888A JPH0296910A JP H0296910 A JPH0296910 A JP H0296910A JP 24905888 A JP24905888 A JP 24905888A JP 24905888 A JP24905888 A JP 24905888A JP H0296910 A JPH0296910 A JP H0296910A
- Authority
- JP
- Japan
- Prior art keywords
- protective layer
- layer
- magnetic
- magnetic layer
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 54
- 239000010409 thin film Substances 0.000 title claims description 17
- 239000011241 protective layer Substances 0.000 claims abstract description 55
- 239000010410 layer Substances 0.000 claims abstract description 50
- 239000000758 substrate Substances 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 15
- 229910052681 coesite Inorganic materials 0.000 abstract description 8
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 8
- 229910052682 stishovite Inorganic materials 0.000 abstract description 8
- 229910052905 tridymite Inorganic materials 0.000 abstract description 8
- 239000000377 silicon dioxide Substances 0.000 abstract description 7
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 7
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 abstract description 6
- 238000005260 corrosion Methods 0.000 abstract description 5
- 230000007797 corrosion Effects 0.000 abstract description 5
- 238000004544 sputter deposition Methods 0.000 abstract description 5
- 230000015572 biosynthetic process Effects 0.000 abstract description 3
- 229910000702 sendust Inorganic materials 0.000 abstract description 3
- 238000005530 etching Methods 0.000 abstract description 2
- 239000004020 conductor Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 229910000859 α-Fe Inorganic materials 0.000 description 3
- 239000012790 adhesive layer Substances 0.000 description 2
- 239000000696 magnetic material Substances 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 229910020018 Nb Zr Inorganic materials 0.000 description 1
- 229910001093 Zr alloy Inorganic materials 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000003302 ferromagnetic material Substances 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 238000007542 hardness measurement Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3103—Structure or manufacture of integrated heads or heads mechanically assembled and electrically connected to a support or housing
- G11B5/3106—Structure or manufacture of integrated heads or heads mechanically assembled and electrically connected to a support or housing where the integrated or assembled structure comprises means for conditioning against physical detrimental influence, e.g. wear, contamination
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Magnetic Heads (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は薄膜磁気ヘッドに関し、更に詳述すれば、磁性
層上に積層される保護層が改良された薄膜磁気ヘッドに
関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a thin film magnetic head, and more specifically, to a thin film magnetic head in which a protective layer laminated on a magnetic layer is improved.
〔従来の技術及び発明が解決しようとする課題〕薄膜磁
気ヘッドは、フェライト或いはサファイア等の耐摩耗性
材料より成る基板上に、センダスト、アモルファス等に
より形成した複数の（下部、上部）磁性層、この磁性層
間に導電性金属から成るコイル導体層及び絶縁層等を成
膜及びエツチングを繰返して所定の形状にパターニング
し。[Prior art and problems to be solved by the invention] A thin-film magnetic head has a plurality of (lower and upper) magnetic layers formed of sendust, amorphous, etc. on a substrate made of a wear-resistant material such as ferrite or sapphire. Between the magnetic layers, a coil conductor layer, an insulating layer, etc. made of conductive metal are repeatedly deposited and etched, and patterned into a predetermined shape.
最後に記録媒体の走行による摩耗等から前記磁性層を保
護する目的で保護層を形成して設けられている。保護層
としてはアルミナやＳ ｉ Ｏ２が用いられていた。Finally, a protective layer is formed to protect the magnetic layer from wear caused by running the recording medium. Alumina and SiO2 were used as the protective layer.
処で、上記のような構成において、保護層が磁性層に較
べて充分に硬いと、記録媒体の走行による摩耗が磁性層
側に早く及び、磁性層に偏摩耗が生じてスペーシング・
ロスを発生することは良く知られている。However, in the above structure, if the protective layer is sufficiently hard compared to the magnetic layer, the wear caused by the running of the recording medium will reach the magnetic layer side more quickly, causing uneven wear on the magnetic layer and causing problems with the spacing.
It is well known that losses occur.
一方、前記保護層は軟らか過ぎると全体の摩耗が早くな
り、ヘッド寿命を短かくする。従って。On the other hand, if the protective layer is too soft, the overall wear will be rapid, shortening the life of the head. Therefore.
保護層の硬度は磁性層と路間じか、これよりも幾分低い
硬さに設けられていることが望ましい。It is desirable that the hardness of the protective layer be set at a level between the magnetic layer and the magnetic layer, or a hardness slightly lower than this.
例えば、磁性層のビッカース硬度がＨｖ−６００〜８５
０ｋｇ／−のとき、保護層はＨｖ −４００〜８００ｋ
ｇ／ｗＩの範囲に設定されていることが望ましい。For example, the Vickers hardness of the magnetic layer is Hv-600 to 85.
When 0kg/-, the protective layer is Hv -400~800k
It is desirable to set it within the range of g/wI.
また、前記保護層の厚みは、記録媒体の摺動性、耐偏摩
耗の点から２０〜４０μｍ程度以上を必要とする。しか
しこの程度の厚みになると１通常、累積された内部応力
により保護層が剥離又は保護層に亀裂を生じる。このた
め内部応力を極力小さくする必要がある。この問題を解
決する１つの有効手段は、ヘッドを構成する各材料の熱
膨張係数を合わせることである。しかしながら、一般に
従来は金属磁性材料と保護層の熱膨張係数を合わせるこ
とは難しかった。Further, the thickness of the protective layer needs to be about 20 to 40 μm or more from the viewpoint of sliding properties of the recording medium and resistance to uneven wear. However, when the thickness reaches this level, the protective layer usually peels off or cracks due to the accumulated internal stress. Therefore, it is necessary to reduce internal stress as much as possible. One effective means to solve this problem is to match the thermal expansion coefficients of the materials that make up the head. However, it has generally been difficult to match the thermal expansion coefficients of the metallic magnetic material and the protective layer.
特開昭８２− １６２１８号公報には、偏摩耗の発生を
効果的に抑制できる保護層としてＭｇＯとＳｉＯ２の混
合物が開示されている。更に。JP-A-82-16218 discloses a mixture of MgO and SiO2 as a protective layer that can effectively suppress the occurrence of uneven wear. Furthermore.
ＭｇＯとＳｉＯの組成比をＳ ｔ Ｏ２を濃度にして１
０〜７０％とすることにより、適度な硬さ（Ｈｖ−４５
０〜８５０）と所望の熱膨張係数が得られることが記載
されている。The composition ratio of MgO and SiO is 1 with S t O2 as the concentration.
By setting it as 0 to 70%, appropriate hardness (Hv-45
It is described that a desired thermal expansion coefficient of 0 to 850) can be obtained.
しかし、この保護層も、上述のような保護層に基本的に
要求される特性を備えつ°つ、さらに耐食性、加工性ま
でをも十分に満足するものではなかった。However, while this protective layer has the properties basically required for a protective layer as described above, it also does not fully satisfy corrosion resistance and processability.
本発明は、上記従来技術の間居点を飛躍的に改良した薄
膜磁気ヘッドを提供することを目的とする。SUMMARY OF THE INVENTION An object of the present invention is to provide a thin-film magnetic head that dramatically improves the disadvantages of the prior art described above.
本発明によれば、基板と、基板上に下部磁性層、絶縁層
及び上部磁性層を顕次有し、該上部磁性層上に形成され
記録媒体走行面に露出する端面を備えた保護層を含む薄
膜磁気ヘッドにおいて。According to the present invention, the present invention includes a substrate, a protective layer which has a lower magnetic layer, an insulating layer, and an upper magnetic layer on the substrate, and which is formed on the upper magnetic layer and has an end surface exposed to the recording medium running surface. In thin film magnetic heads.
前記保護層の主成分を、２０〜９５ ｍｏｌ％のＳ ｔ
Ｏ２と、５〜８０ｍｏｌ％のｗｏ 及びＭ ｏ ０
３のＩＩ又は２種としたことを特徴とする薄膜磁気ヘッ
ドにより上記目的を達成できる。The main component of the protective layer is 20 to 95 mol% of S t
O2 and 5-80 mol% wo and M o 0
The above object can be achieved by a thin film magnetic head characterized by having Type 3 II or Type 2.
本発明の薄膜磁気ヘッドの保護層は、２０〜９５ｍｏｌ
％のＳｉＯ２と、 ５〜８０ ｍｏｌ％のＷＯ３及び
Ｍ ｏ Ｏａの１種又は２種を主成分とする。The protective layer of the thin film magnetic head of the present invention has a content of 20 to 95 mol.
% SiO2 and 5 to 80 mol% of one or two of WO3 and MoOa as main components.
ｗｏ 及びＭ ｏ Ｏａの１種又は２種が５ｆｆｌｏ
１％未満の場合には、保護層が通常用いられる磁性層に
比し硬くなり（ビッカース硬度で７５０ｋｇ ／−を越
える）、磁性層に偏摩耗が生じ、逆に８０ ｍｏｌ％を
越える場合には、保護層の硬度が不適当に軟らかくなり
（ビッカース硬度工４００ｋｇ ／−未満）。One or two of wo and M o Oa is 5fflo
If it is less than 1%, the protective layer will be harder than a commonly used magnetic layer (more than 750 kg/- in terms of Vickers hardness), and uneven wear will occur in the magnetic layer.On the other hand, if it exceeds 80 mol%, , the hardness of the protective layer becomes inappropriately soft (Vickers hardness less than 400 kg/-).
早く摩耗する。そのため、ＷＯ及びＭ ｏ Ｏ３の１種
又は２種が４０〜７０ ｍｏｌ％の範囲は好ましい。wear out quickly. Therefore, a range of 40 to 70 mol% of one or both of WO and MoO3 is preferable.
一方、保護層はスパッタ法、電子ビーム蒸着法等の気相
積着法により形成することができるが。On the other hand, the protective layer can be formed by a vapor deposition method such as a sputtering method or an electron beam evaporation method.
ｗｏ 及びＭ ｏ Ｏａの１種又は２種を５ 口Ｏ１
％以上含有するので２例えばスパッタ法を用いた場合で
も歪が少なく残留応力が小さい（約０．４５ ＧＰａ以
下の）保護層を形成できる。従って、保護層は。5 mouths of one or two of wo and M o Oa
% or more, it is possible to form a protective layer with less strain and residual stress (approximately 0.45 GPa or less) even when sputtering is used, for example. Therefore, the protective layer.
前記方法により磁性層に直接安定して形成することがで
きる。The above method allows direct and stable formation of the magnetic layer.
以下２図面を参照して本発明の詳細な説明する。 The present invention will be described in detail below with reference to two drawings.
第１図は１本発明の薄膜磁気ヘッドの一実施例の構造を
示す断面図であり、製造プロセスをこの図に基づいて説
明する。FIG. 1 is a sectional view showing the structure of one embodiment of the thin film magnetic head of the present invention, and the manufacturing process will be explained based on this figure.
図において、フェライト基板１０上にスパッタ法により
Ｃｏ−Ｎｂ−Ｚｒ合金の強磁性体を１０μｍ付着し、下
部磁性層１１を形成する。次に下部磁性層１１上の所定
の位置にＳ １０２等よりなる非磁性絶縁層１２及びＣ
ｕ、Ａ１等よりなるコイル導体層１３を適宜形成した後
、コイル導体層１３を含む非磁性絶縁層１２の断面を図
に示すように略台形状にイオンミリングにより加工する
。次にギャップ層１４を形成し、後に形成する上部磁性
層１５と直接接合する所定の位置（図示せず）よりギャ
ップ層１４を除去して、Ｃｏ−Ｎｂ−Ｚｒ合金の金属磁
性材料をスパッタ法で１５μｍ付着し、所定の位置（図
示せず）で下部磁性層１１に接合した上部磁性層１５を
形成する。In the figure, a ferromagnetic material of Co--Nb--Zr alloy is deposited to a thickness of 10 μm on a ferrite substrate 10 by sputtering to form a lower magnetic layer 11. Next, a non-magnetic insulating layer 12 made of S102 or the like is placed on the lower magnetic layer 11 at a predetermined position.
After appropriately forming the coil conductor layer 13 made of U, A1, etc., the cross section of the nonmagnetic insulating layer 12 including the coil conductor layer 13 is processed into a substantially trapezoidal shape by ion milling as shown in the figure. Next, a gap layer 14 is formed, and the gap layer 14 is removed from a predetermined position (not shown) where it will be directly connected to the upper magnetic layer 15 to be formed later, and a metal magnetic material of Co-Nb-Zr alloy is sputtered. The upper magnetic layer 15 is deposited to a thickness of 15 μm and joined to the lower magnetic layer 11 at a predetermined position (not shown).
次に１本発明の要部である保護層１６を上部磁性層１５
の上に形成する。Next, the protective layer 16, which is the main part of the present invention, is attached to the upper magnetic layer 15.
form on top of.
保護層１ＢはＲＦマグネトロンスパッタ装置により形成
した。ターゲットとしては、その組成がＳ ｉＯ２より
なるものの上にＷＯ３よりなる小片（５ｍｍ角）を適当
に配したものを用いた。The protective layer 1B was formed using an RF magnetron sputtering device. As a target, a target having a composition of SiO2 with small pieces (5 mm square) of WO3 appropriately arranged thereon was used.
Ａｒ（５％０２含有）ガス圧を０．４Ｐａ、陰極電力を
３５０Ｗ 、ターゲット−基板間距離を５５關とし。The Ar (containing 5% O2) gas pressure was 0.4 Pa, the cathode power was 350 W, and the target-substrate distance was 55 degrees.
基板を水冷して厚さ４０μｌの保護層を成形した。この
保護層は、 ７２ ｍｏｌ％のＳ ｉＯ２及び２８ ｍ
ｏｌ％のＷＯ３を含をしていた。The substrate was cooled with water to form a protective layer with a thickness of 40 μl. This protective layer consisted of 72 mol% SiO2 and 28 m
It contained 0.1% of WO3.
上述のようにして保護層１６が形成された後、従来と同
様、前記保護層１Ｂを平坦化し、接着剤層（エポキシ系
）１８を介して保護板１９と接着し記録媒体走行面２０
を平滑にして２本発明の一実施例である薄膜磁気ヘッド
を製作した。After the protective layer 16 is formed as described above, the protective layer 1B is flattened and bonded to the protective plate 19 via the adhesive layer (epoxy type) 18 to form the recording medium running surface 20, as in the conventional case.
A thin film magnetic head, which is an embodiment of the present invention, was fabricated by smoothing the thin film.
に） （ＳｉＯ） （ＷＯ３）ｘを成分とした１−
ｘ
保護層の硬度をマイクロビッカース硬度測定法（２５ｇ
荷重）によりｎ１定した結果を第２図に実線で示す。) (SiO) (WO3) 1- with x as a component
x Measure the hardness of the protective layer using the micro Vickers hardness measurement method (25g
The results of determining n1 according to load) are shown in FIG. 2 as a solid line.
また、Ｓ ｉＯ２−１０２−ＷＯ３−７を主体とした保
護層の硬度も同様に測定した。この結果を第３図に示す
。Further, the hardness of the protective layer mainly composed of SiO2-102-WO3-7 was measured in the same manner. The results are shown in FIG.
これらの図により１本発明で特定する範囲内の保護層の
硬度が、磁性層として一般的に用いられているものに対
して良好であることがわかる。From these figures, it can be seen that the hardness of the protective layer within the range specified in the present invention is better than that generally used as a magnetic layer.
（ロ）厚さ ０ 、３ ｍｍのサファイア基板に、（Ｓ
ｉＯ） （ＷＯ３）ｘを成分とした厚さ５μｍの２
１−ｘ
保護層を、ＲＦマグネトロンスパッタ装置により形成し
、サファイア基板の反りを測定し、これを保護層の残留
応力に換算した。成膜条件は前記実施例と同様にして行
なった。この結果を第２図に破線で示す。(b) On a sapphire substrate with a thickness of 0.3 mm, (S
iO) (WO3) 2 with a thickness of 5 μm containing x as a component
1-x A protective layer was formed using an RF magnetron sputtering device, the warpage of the sapphire substrate was measured, and this was converted into the residual stress of the protective layer. The film formation conditions were the same as in the previous example. This result is shown in FIG. 2 by a broken line.
また、前記保護層の主成分をＳ ｉＯ２Ｗ ＯａＭ ｏ
Ｏａとする以外は上記方法と同様にして残留応力を求
めた。この結果を第４図に示す。Further, the main component of the protective layer is SiO2W OaMo
Residual stress was determined in the same manner as above except that Oa was used. The results are shown in FIG.
これらの図により１本発明で特定する範囲内の保護層を
形成した前記基板の残留応力は、極めて小さいことがわ
かる。From these figures, it can be seen that the residual stress of the substrate on which the protective layer is formed within the range specified by the present invention is extremely small.
（ハ）前記実施例の製造プロセスと同様に製作された本
発明の一実施例の薄膜磁気ヘッドのいくつかを、フロッ
ピー・ディスク装置に装着し記録媒体（Ｐｕｊｌｘ Ｖ
Ｆ −ＨＲ）と１０００時間接触走行させて、偏摩耗
を観察した。偏摩耗はオプティカルフラットにより干渉
縞を観察し、磁性層と保護層との段差を調べることによ
り行った。その結果１本発明で特定する範囲内の保護層
で１段差は認められず偏摩耗は生じていなかった。(c) Some of the thin film magnetic heads of one embodiment of the present invention manufactured in the same manner as the manufacturing process of the above embodiments were mounted on a floppy disk drive and a recording medium (Pujlx V
F-HR) was run in contact for 1000 hours, and uneven wear was observed. Uneven wear was determined by observing interference fringes using an optical flat and examining the level difference between the magnetic layer and the protective layer. As a result, no difference in level was observed in the protective layer within the range specified in the present invention, and uneven wear did not occur.
に）本発明の薄膜磁気ヘッドの保護層を、４０℃。b) The protective layer of the thin film magnetic head of the present invention was heated to 40°C.
湿度９０％で１週間放置して耐食性を試験したが。The corrosion resistance was tested by leaving it for one week at 90% humidity.
全く変化しなかった。It didn't change at all.
本発明の薄膜磁気ヘッドの保護層は、そのビッカース硬
度Ｈｖが約４００〜約７００ｋｇ ／−の範囲内にある
ため、軟らかすぎることがなく、また磁性層として通常
用いられているＣｏ系アモルファス、センダスト等（Ｈ
ｖは８５０ｋｇ／−程度）との摩耗性のマツチングが良
好であり、磁性層に偏摩耗が生じない。The protective layer of the thin film magnetic head of the present invention has a Vickers hardness Hv in the range of about 400 to about 700 kg/-, so it is not too soft and is made of Co-based amorphous, sendust, etc., which are commonly used as magnetic layers. etc. (H
v is about 850 kg/-), and the abrasion resistance is well matched, and uneven wear does not occur in the magnetic layer.
前記保護層をスパッタ法等により磁性層に直接形成して
も歪が小さく、残留応力がほとんど生じないので、保護
層の剥離や亀裂は生じない。Even if the protective layer is formed directly on the magnetic layer by sputtering or the like, the strain is small and almost no residual stress is generated, so that peeling or cracking of the protective layer does not occur.
前記保護層は、高温高湿の条件下においても変質せず、
耐食性が良好である。The protective layer does not change in quality even under high temperature and high humidity conditions,
Good corrosion resistance.
前記保護層を磁性層に形成した後に機械的に加工しても
、保護層の剥離や亀裂が生じない。また、フロン系ガス
による反応性エツチングも可能である。Even if the protective layer is mechanically processed after being formed on the magnetic layer, the protective layer does not peel or crack. Reactive etching using fluorocarbon gas is also possible.
第１図は本発明に基づいて構成される薄膜磁気ヘッドの
断面図、第２図はＷＯ３のモル％とビッカース硬度Ｈｖ
、及び内部応力との関係を示した図、第３図及び第４図
はＳＳ１０２−ＷＯ３ｏ Ｏａを主体とした保護層の夫
々ビッカース硬度及び残留応力の測定結果を示す図であ
る。
１０・・・フェライト基板。
１１・・・下部磁性層。
１３・・・コイル導体層。
１５・・・上部磁性層。
１７・・・フロントギヤ
１８・・・接着剤層。
２０・・・記録媒体走行面
１２・・・非磁性絶縁層。
１４・・・ギャップ層。
１６・・・保護層。
ツブ部。
１９・・・保護板
第
図
第３図
ＳｉＯ□
ピンカース硬度［ｋｇ／ｍ♂〕
（ｍｏｔ％）
第２図
ＷＯ５
ｍｏｌ％
第４図
ｉＯ２
バ留応力［ＧＰａ）
（ｍｏｌ％）FIG. 1 is a cross-sectional view of a thin film magnetic head constructed based on the present invention, and FIG. 2 is a graph showing the mol% of WO3 and the Vickers hardness Hv.
and FIGS. 3 and 4 are diagrams showing the measurement results of Vickers hardness and residual stress, respectively, of a protective layer mainly composed of SS102-WO3o Oa. 10... Ferrite substrate. 11...Lower magnetic layer. 13...Coil conductor layer. 15... Upper magnetic layer. 17...Front gear 18...Adhesive layer. 20... Recording medium running surface 12... Nonmagnetic insulating layer. 14...Gap layer. 16...Protective layer. Tubu part. 19...Protective plate Figure 3 SiO□ Pinkers hardness [kg/m♂] (mot%) Figure 2 WO5 mol% Figure 4 iO2 Burr stress [GPa] (mol%)
Claims (1)
順次有し、該上部磁性層上に形成され記録媒体走行面に
露出する端面を備えた保護層を含む薄膜磁気ヘッドにお
いて、前記保護層の主成分を、２０〜９５ｍｏｌ％のＳ
ｉＯ＿２と、５〜８０ｍｏｌ％のＷＯ＿３及びＭｏＯ＿
３の１種又は２種としたことを特徴とする薄膜磁気ヘッ
ド。A thin film magnetic head comprising a substrate, a protective layer having a lower magnetic layer, an insulating layer, and an upper magnetic layer sequentially on the substrate, and having an end surface formed on the upper magnetic layer and exposed to a recording medium running surface. The main component of the protective layer is 20 to 95 mol% S.
iO_2 and 5-80 mol% WO_3 and MoO_
A thin film magnetic head characterized in that it is one or two types of type 3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24905888A JPH0296910A (en) | 1988-10-04 | 1988-10-04 | Thin film magnetic head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24905888A JPH0296910A (en) | 1988-10-04 | 1988-10-04 | Thin film magnetic head |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0296910A true JPH0296910A (en) | 1990-04-09 |
Family
ID=17187383
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24905888A Pending JPH0296910A (en) | 1988-10-04 | 1988-10-04 | Thin film magnetic head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0296910A (en) |
-
1988
- 1988-10-04 JP JP24905888A patent/JPH0296910A/en active Pending
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