JPH0296909A - Thin film magnetic head - Google Patents
Thin film magnetic headInfo
- Publication number
- JPH0296909A JPH0296909A JP24905788A JP24905788A JPH0296909A JP H0296909 A JPH0296909 A JP H0296909A JP 24905788 A JP24905788 A JP 24905788A JP 24905788 A JP24905788 A JP 24905788A JP H0296909 A JPH0296909 A JP H0296909A
- Authority
- JP
- Japan
- Prior art keywords
- protective layer
- layer
- magnetic
- magnetic layer
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 54
- 239000010409 thin film Substances 0.000 title claims description 16
- 239000011241 protective layer Substances 0.000 claims abstract description 60
- 239000010410 layer Substances 0.000 claims abstract description 49
- 239000000758 substrate Substances 0.000 claims description 12
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 abstract description 10
- 238000004544 sputter deposition Methods 0.000 abstract description 6
- 238000005260 corrosion Methods 0.000 abstract description 5
- 230000007797 corrosion Effects 0.000 abstract description 5
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 abstract description 5
- 230000015572 biosynthetic process Effects 0.000 abstract description 3
- 229910000702 sendust Inorganic materials 0.000 abstract description 3
- 238000005530 etching Methods 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000005245 sintering Methods 0.000 description 6
- 239000004020 conductor Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 229910052681 coesite Inorganic materials 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 229910052682 stishovite Inorganic materials 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- 229910000859 α-Fe Inorganic materials 0.000 description 3
- 239000012790 adhesive layer Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000000696 magnetic material Substances 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 229910020018 Nb Zr Inorganic materials 0.000 description 1
- 229910001093 Zr alloy Inorganic materials 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000003302 ferromagnetic material Substances 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3103—Structure or manufacture of integrated heads or heads mechanically assembled and electrically connected to a support or housing
- G11B5/3106—Structure or manufacture of integrated heads or heads mechanically assembled and electrically connected to a support or housing where the integrated or assembled structure comprises means for conditioning against physical detrimental influence, e.g. wear, contamination
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Magnetic Heads (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は薄膜磁気ヘッドに関し、更に詳述すれば、磁性
層上に積層される保護層が改良された薄膜磁気ヘッドに
関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a thin film magnetic head, and more specifically, to a thin film magnetic head in which a protective layer laminated on a magnetic layer is improved.
〔従来の技術及び発明が解決しようとする課題〕薄膜磁
気ヘッドは、フェライト或いはサファイア等の耐摩耗性
材料より成る基板上に、センダスト、アモルファス等に
より形成した複数の(下部、上部)磁性層、この磁性層
間に導電性金属から成るコイル導体層及び絶縁層等を成
膜及びエツチングを繰返して所定の形状にバターニング
し。[Prior art and problems to be solved by the invention] A thin-film magnetic head has a plurality of (lower and upper) magnetic layers formed of sendust, amorphous, etc. on a substrate made of a wear-resistant material such as ferrite or sapphire. Between the magnetic layers, a coil conductor layer, an insulating layer, etc. made of a conductive metal are repeatedly formed and etched, and patterned into a predetermined shape.
最後に記録媒体の走行による摩耗等から前記磁性層を保
護する目的で保護層を形成して設けられている。保護層
としてはアルミナやSiO2が用いられていた。Finally, a protective layer is formed to protect the magnetic layer from wear caused by running the recording medium. Alumina and SiO2 were used as the protective layer.
処で、上記のような構成において、保護層が磁性層に較
べて充分に硬いと、記録媒体の走行による摩耗が磁性層
側に早く及び、磁性層に偏摩耗が生じてスペーシング・
ロスを発生することは良く知られている。However, in the above structure, if the protective layer is sufficiently hard compared to the magnetic layer, the wear caused by the running of the recording medium will reach the magnetic layer side more quickly, causing uneven wear on the magnetic layer and causing problems with the spacing.
It is well known that losses occur.
一方、前記保護層は軟らか過ぎると全体の摩耗が早くな
り、ヘッド寿命を短かくする。従って。On the other hand, if the protective layer is too soft, the overall wear will be rapid, shortening the life of the head. Therefore.
保護層の硬度は磁性層と路間しか、これよりも幾分低い
硬さに設けられていることが望ましい。It is desirable that the hardness of the protective layer is slightly lower than that only between the magnetic layer and the path.
例えば、磁性層のビッカース硬度がHv−11i00〜
B50kg/−のとき、保護層はHv = 400−
OHkg/−の範囲に設定されていることが望ましい。For example, the Vickers hardness of the magnetic layer is Hv-11i00~
When B50kg/-, the protective layer has Hv = 400-
It is desirable to set it within the range of OHkg/-.
また、前記保護層の厚みは、記録媒体の摺動性、耐偏摩
耗の点から20〜40μm程度以上を必要とする。しか
しこの程度の厚みになると2通常、累積された内部応力
により保護層が剥離又は保護層に亀裂を生じる。このた
め内部応力を極力小さくする必要がある。この問題を解
決する1つの有効手段は、ヘッドを構成する各材料の熱
膨張係数を合わせることである。しかしながら、一般に
従来は金属磁性材料と保護層の熱膨張係数を合わせるこ
とは難しかった。Further, the thickness of the protective layer needs to be about 20 to 40 μm or more from the viewpoint of sliding properties of the recording medium and resistance to uneven wear. However, when the thickness reaches this level, the protective layer usually peels off or cracks due to the accumulated internal stress. Therefore, it is necessary to reduce internal stress as much as possible. One effective means to solve this problem is to match the thermal expansion coefficients of the materials that make up the head. However, it has generally been difficult to match the thermal expansion coefficients of the metallic magnetic material and the protective layer.
特開昭62− 16218号公報には、偏摩耗の発生を
効果的に抑制できる保護層としてMgOとSiO2の混
合物が開示されている。更に。JP-A-62-16218 discloses a mixture of MgO and SiO2 as a protective layer that can effectively suppress the occurrence of uneven wear. Furthermore.
MgOと5i02の組成比をS iO2を濃度にして1
0〜70%とすることにより、適度な硬さ(Hv−45
0〜850kg / mj )と所望の熱膨張係数が得
られることが記載されている。The composition ratio of MgO and 5i02 is 1 with the concentration of SiO2
By setting it as 0 to 70%, appropriate hardness (Hv-45
It is stated that a desired thermal expansion coefficient of 0 to 850 kg/mj) can be obtained.
しかし、この保護層も、上述のような保護層に基本的に
要求される特性を備えつつ、さらに耐食性、加工性まで
をも十分に満足するものではなかった。However, while this protective layer has the properties basically required for a protective layer as described above, it also does not fully satisfy corrosion resistance and processability.
本発明は、上記従来技術の問題点を飛躍的に改良した薄
膜磁気ヘッドを提供することを目的とする。SUMMARY OF THE INVENTION An object of the present invention is to provide a thin film magnetic head that dramatically improves the problems of the prior art described above.
本発明によれば、基板と、基板上に下部磁性層、絶縁層
及び上部磁性層を順次有し、該上部磁性層上に形成され
記録媒体走行面に露出する端面を備えた保護層を含む薄
膜磁気ヘッドにおいて。According to the present invention, the present invention includes a substrate, a protective layer having a lower magnetic layer, an insulating layer, and an upper magnetic layer in this order on the substrate, and having an end surface formed on the upper magnetic layer and exposed to the recording medium running surface. In thin film magnetic heads.
前記保護層の主成分を、20〜75 mol%のT i
O2と、25〜80IIlo1%のWO3及びM o
03の1種又は2種としたことを特徴とする薄膜磁気ヘ
ッドにより上記目的を達成できる。The main component of the protective layer is 20 to 75 mol% Ti
O2 and 25-80IIlo1% WO3 and Mo
The above object can be achieved by a thin film magnetic head characterized by having one or two types of No. 03.
本発明の薄膜磁気ヘッドの保護層は、20〜75a+o
1%のTiO2と、 25〜80 a+o1%のWO3
及びM2O3の1種又は2種を主成分とする。The protective layer of the thin film magnetic head of the present invention has a thickness of 20 to 75 a+o.
1% TiO2 and 25-80 a+o1% WO3
The main component is one or two of M2O3 and M2O3.
wo 及びM o Oaの1種又は2種が25 mo
l%未満の場合には、保護層が通常用いられる磁性層に
比し硬くなり(ビッカース硬度で700)cg /−を
越える)、磁性層に偏摩耗が生じ、逆に80 mol%
を越える場合には、保護層の硬度が不適当に軟らかく゛
な一す−(ビッカース硬度で400kg/In#未満)
。One or both of wo and M o Oa are 25 mo
If it is less than 1%, the protective layer becomes harder than a commonly used magnetic layer (more than 700 cg/- in terms of Vickers hardness), uneven wear occurs in the magnetic layer, and conversely, if it is less than 80 mol%
If it exceeds 400 kg/In# in terms of Vickers hardness, the hardness of the protective layer is inappropriately soft.
.
早く摩耗する。そのため、WO3及びM2O3の1種又
は2種が40〜70 mol%の範囲は好ましい。wears out quickly. Therefore, the content of one or both of WO3 and M2O3 is preferably in the range of 40 to 70 mol%.
一方、保護層はスパッタ法、電子ビーム蒸着法等の気相
積着法により形成することができるが。On the other hand, the protective layer can be formed by a vapor deposition method such as a sputtering method or an electron beam evaporation method.
WO3及びM o Oaの1種又は2種を25 mol
%以上含有するので2例えばスパッタ法を用いた場合で
も歪が少なく残留応力が小さい(約0.35 GPa以
下の)保護層を形成できる。従って、保護層は。25 mol of one or two of WO3 and M o Oa
% or more, it is possible to form a protective layer with less strain and residual stress (approximately 0.35 GPa or less) even when sputtering is used, for example. Therefore, the protective layer.
前記方法により磁性層に直接安定して形成することがで
きる。The above method allows direct and stable formation of the magnetic layer.
保護層をスパッタ法により形成する場合。When the protective layer is formed by sputtering.
ターゲットを製造ないし入手しやすいように。Make targets easier to manufacture or obtain.
ターゲットへ所定の焼結助剤の1種以上を添加すること
ができる。そのため、保護層にも前記焼結助剤が含有さ
れることがある。前記焼結助剤の保護層へ、の含有は1
例えば保護層の主成分全体のIo[001%以下の前記
焼結助剤で、前記TlO2の一部をT 102の焼結に
十分な程度の量で置き換える程度であれば問題はない。One or more predetermined sintering aids can be added to the target. Therefore, the protective layer may also contain the sintering aid. The content of the sintering aid in the protective layer is 1
For example, there is no problem as long as the sintering aid has an Io [001% or less of the entire main component of the protective layer and a portion of the TlO2 is replaced in an amount sufficient for sintering T102.
なお、保護層として必要とされる特性を満たすことがで
きれば、他の成分を含有させることもできるが、焼結助
剤との合量はT iO2に対して10mol%以下で置
き換えることが好ましい。Note that other components may be included as long as they can satisfy the characteristics required for the protective layer, but it is preferable that the total amount of the sintering aid is 10 mol % or less relative to TiO2.
以下2図面を参照して本発明の詳細な説明する。 The present invention will be described in detail below with reference to two drawings.
第1図は1本発明の薄膜磁気ヘッドの一実施例の構造を
示す断面図であり、製造プロセスをこの図に基づいて説
明する。FIG. 1 is a sectional view showing the structure of one embodiment of the thin film magnetic head of the present invention, and the manufacturing process will be explained based on this figure.
図において、フェライト基板IO上にスパッタ法により
Co−Nb−Zr合金の強磁性体を10μm付着し、下
部磁性層11を形成する。次に下部磁性層11上の所定
の位置にS I 02等よりなる非磁性絶縁層12及び
Cu、A1等よりなるコイル導体層13を適宜形成した
後、コイル導体層13を含む非磁性絶縁層12の断面を
図に示すように略台、形状にイオンミリングにより加工
する。次にギャップ層14を形成し、後に形成する上部
磁性層15と直接接合する所定の位置(図示せず)より
ギャップ層14を除去して、Co−Nb−Zr合金の金
属磁性材料をスパッタ法で15μs付着し、所定の位置
(図示せず)で下部磁性層11に接合した上部磁性層1
5を形成する。In the figure, a ferromagnetic material of Co--Nb--Zr alloy is deposited to a thickness of 10 μm on a ferrite substrate IO by sputtering to form a lower magnetic layer 11. Next, after appropriately forming a non-magnetic insulating layer 12 made of S I 02 or the like and a coil conductor layer 13 made of Cu, A1, etc. at predetermined positions on the lower magnetic layer 11, the non-magnetic insulating layer 13 including the coil conductor layer 13 is formed. The cross section of 12 is processed by ion milling into a substantially pedestal shape as shown in the figure. Next, a gap layer 14 is formed, and the gap layer 14 is removed from a predetermined position (not shown) where it will be directly connected to the upper magnetic layer 15 to be formed later, and a metal magnetic material of Co-Nb-Zr alloy is sputtered. The upper magnetic layer 1 was attached for 15 μs and joined to the lower magnetic layer 11 at a predetermined position (not shown).
form 5.
次に9本発明の要部である保護層16を上部磁性層15
の上に形成する。Next, the protective layer 16, which is the main part of the present invention, is applied to the upper magnetic layer 15.
form on top of.
保護層IBはRFマグネトロンスパッタ装置により形成
した。ターゲットとしては、その組成がTiO2よりな
るものの上にWO3よりなる小片(5mm角)を適当に
配したものを用いた。ただしターゲットは完全なT i
O2ではなく一部酸素の抜けたTiOなる組成であると
推定される。The protective layer IB was formed using an RF magnetron sputtering device. As a target, a target having a composition of TiO2 with small pieces (5 mm square) of WO3 appropriately arranged thereon was used. However, the target is a complete Ti
It is estimated that the composition is not O2 but TiO with some oxygen removed.
Ar(5%02含有)ガス圧を0.4Pa、陰極電力を
350W 、 ターゲット−基板間距離を55mmと
し。The Ar (containing 5% O2) gas pressure was 0.4 Pa, the cathode power was 350 W, and the target-substrate distance was 55 mm.
基板を水冷して厚さ40μlの保護層を成形した。The substrate was cooled with water to form a protective layer with a thickness of 40 μl.
この保護層は、 45 mol%のTi0.55mol
%のWO3を含有していた。This protective layer contains 0.55 mol of 45 mol% Ti
% of WO3.
上述のようにして保護層16が形成された後、従来と同
様、前記保護層16を平坦化し、接着剤層(エポキシ系
)18を介して保護板19と接着し記録媒体走行面20
を平滑にして1本発明の一実施例である薄膜磁気ヘッド
を製作した。After the protective layer 16 is formed as described above, the protective layer 16 is flattened and adhered to the protective plate 19 via the adhesive layer (epoxy type) 18 to form the recording medium running surface 20 as in the conventional method.
A thin film magnetic head, which is an embodiment of the present invention, was fabricated by smoothing the surface.
m (T t O) (WOa ) xを成分
とした 1−x
保護層の硬度をマイクロビッカース硬度測定法(25g
荷重)により測定した結果を第2図に実線で示す。The hardness of the 1-x protective layer containing m (T t O) (WOa)
Figure 2 shows the results measured by the solid line in Figure 2.
また、TiO2−WO3−MoO3を主体とした保護層
の硬度も同様に測定した。この結果を第3図に示す。Further, the hardness of the protective layer mainly composed of TiO2-WO3-MoO3 was also measured in the same manner. The results are shown in FIG.
これらの図により1本発明で特定する範囲内の保護層の
硬度が、磁性層として一般的に用いられているものに対
して良好であることがわかる。From these figures, it can be seen that the hardness of the protective layer within the range specified in the present invention is better than that generally used as a magnetic layer.
に)厚さ 0.31のサファイア基板に、(TiO)
(WO3)xを成分とした厚さ5μmの2 1−
x
保護層を、RFマグネトロンスパッタ装置により形成し
、サファイア基板の反りを測定し、これを保護層の残留
応力に換算した。成膜条件は前記実施例と同様にして行
なった。この結果を第2図に破線で示す。(TiO) on a sapphire substrate with a thickness of 0.31
(WO3) 2 1- with a thickness of 5 μm containing x as a component
x A protective layer was formed using an RF magnetron sputtering device, the warpage of the sapphire substrate was measured, and this was converted into the residual stress of the protective layer. The film formation conditions were the same as in the previous example. This result is shown in FIG. 2 by a broken line.
また、前記保護層の主成分をTiO2−WO3M o
03とする以外は上記方法と同様にして残留応力を求め
た。この結果を第4図に示す。Further, the main component of the protective layer is TiO2-WO3M o
Residual stress was determined in the same manner as above except that 03 was used. The results are shown in FIG.
これらの図により1本発明で特定する範囲内の保護層を
形成した前記基板の残留応力は、極めて小さいことがわ
かる。From these figures, it can be seen that the residual stress of the substrate on which the protective layer is formed within the range specified by the present invention is extremely small.
(ハ)前記実施例の製造プロセスと同様に製作された本
発明の一実施例の薄膜磁気ヘッドのいくつかを、フロッ
ピー・ディスク装置に装着し記録媒体(Fujix V
F−HR)と1000時間接触走行させて、偏摩耗を観
察した。偏摩耗はオプティカルフラットにより干渉縞を
観察し、磁性層と保護層との段差を調べることにより行
った。その結果1本発明で特定する範囲内の保護層で1
段差は認められず偏摩耗は生じていなかった。(c) Some of the thin-film magnetic heads of one embodiment of the present invention manufactured in the same manner as the manufacturing process of the previous embodiment were mounted on a floppy disk drive and a recording medium (Fujix V
F-HR) for 1000 hours, and uneven wear was observed. Uneven wear was determined by observing interference fringes with an optical flat and examining the level difference between the magnetic layer and the protective layer. As a result, 1 with a protective layer within the range specified in the present invention.
No steps were observed and uneven wear did not occur.
に)本発明の薄膜磁気ヘッドの保護層を、40℃。b) The protective layer of the thin film magnetic head of the present invention was heated to 40°C.
湿度90%で1週間放置して耐食性を試験したが2全く
変化しなかった。Corrosion resistance was tested by leaving it at 90% humidity for one week, but there was no change at all.
本発明の薄膜磁気ヘッドの保護層は、そのビッカース硬
度Hvが約400〜約700kg /−の範囲内にある
ため、軟らかすぎることがなく、また磁性層として通常
用いられているCo系アモルファス、センダスト等(H
vは650kg/−程度)との摩耗性のマツチングが良
好であり、磁性層に偏摩耗が生じない。The protective layer of the thin film magnetic head of the present invention has a Vickers hardness Hv in the range of about 400 to about 700 kg/-, so it is not too soft and is made of Co-based amorphous, sendust, etc., which are commonly used as magnetic layers. etc. (H
v is about 650 kg/-), and the abrasion matching is good, and uneven wear does not occur in the magnetic layer.
前記保護層をスパッタ法等により磁性層に直接形成して
も歪が小さく、残留応力がほとんど生じないので、保護
層の剥離や亀裂は生じない。Even if the protective layer is formed directly on the magnetic layer by sputtering or the like, the strain is small and almost no residual stress is generated, so that peeling or cracking of the protective layer does not occur.
前記保護層は、高温高湿の条件下においても変質せず、
耐食性が良好である。The protective layer does not change in quality even under high temperature and high humidity conditions,
Good corrosion resistance.
前記保護層を磁性層に形成した後に機械的に加工しても
、保護層の剥離や亀裂が生じない。また、フロン系ガス
による反応性エツチングも可能である。Even if the protective layer is mechanically processed after being formed on the magnetic layer, the protective layer does not peel or crack. Reactive etching using fluorocarbon gas is also possible.
第1図は本発明に基づいて構成される薄膜磁気ヘッドの
断面図、第2図はWO3のモル%とビッカース硬度1t
v、及び内部応力との関係を示した図、第3図及び第4
図はT iO2W 03M o Oaを主体とした保護
層の夫々ビッカース硬度及び残留応力の測定結果を示す
図である。
■0・・・フェライト基板。
11・・・下部磁性層。
13・・・コイル導体層。
15・・・上部磁性層。
17・・・フロントギャッ
18・・・接着剤層。
20・・・記録媒体走行面
12・・・非磁性絶縁層。
14・・・ギャップ層。
1B・・・保護層。
プ部。
19・・・保護板FIG. 1 is a cross-sectional view of a thin film magnetic head constructed based on the present invention, and FIG. 2 is a graph showing the mol% of WO3 and the Vickers hardness of 1t.
Figures 3 and 4 show the relationship between v and internal stress.
The figure shows the results of measuring the Vickers hardness and residual stress of a protective layer mainly composed of T iO2W 03M o Oa. ■0... Ferrite substrate. 11...Lower magnetic layer. 13...Coil conductor layer. 15... Upper magnetic layer. 17...Front gap 18...Adhesive layer. 20... Recording medium running surface 12... Nonmagnetic insulating layer. 14...Gap layer. 1B...Protective layer. Part. 19...protective plate
Claims (1)
順次有し、該上部磁性層上に形成され記録媒体走行面に
露出する端面を備えた保護層を含む薄膜磁気ヘッドにお
いて、前記保護層の主成分を、20〜75mol%のT
iO_2と、25〜80mol%のWO_3及びMoO
_3の1種又は2種としたことを特徴とする薄膜磁気ヘ
ッド。A thin film magnetic head comprising a substrate, a protective layer having a lower magnetic layer, an insulating layer, and an upper magnetic layer sequentially on the substrate, and having an end surface formed on the upper magnetic layer and exposed to a recording medium running surface. The main component of the protective layer is 20 to 75 mol% of T.
iO_2 and 25-80 mol% WO_3 and MoO
A thin film magnetic head characterized by being one or two types of _3.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24905788A JPH0296909A (en) | 1988-10-04 | 1988-10-04 | Thin film magnetic head |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24905788A JPH0296909A (en) | 1988-10-04 | 1988-10-04 | Thin film magnetic head |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0296909A true JPH0296909A (en) | 1990-04-09 |
Family
ID=17187369
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP24905788A Pending JPH0296909A (en) | 1988-10-04 | 1988-10-04 | Thin film magnetic head |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0296909A (en) |
-
1988
- 1988-10-04 JP JP24905788A patent/JPH0296909A/en active Pending
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