JPH0289825U - - Google Patents
Info
- Publication number
- JPH0289825U JPH0289825U JP16914888U JP16914888U JPH0289825U JP H0289825 U JPH0289825 U JP H0289825U JP 16914888 U JP16914888 U JP 16914888U JP 16914888 U JP16914888 U JP 16914888U JP H0289825 U JPH0289825 U JP H0289825U
- Authority
- JP
- Japan
- Prior art keywords
- melt
- groove
- fitted
- semiconductor substrate
- epitaxial growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000155 melt Substances 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- 239000007791 liquid phase Substances 0.000 claims description 3
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- 239000013078 crystal Substances 0.000 claims 1
- 239000007788 liquid Substances 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Description
第１図ないし第３図は本考案に係る液相エピタ
キシヤル成長装置の一実施例を各々示す側断面図
であり、各図は各エピタキシヤル成長層生成過程
おけるスライドボートと融液保持部材との位置関
係を各々示すものである。
１……スライドボート、２……るつぼ（融液保
持部材）、２ａ，２ｂ……融液収納部、３……半
導体基板、４……溝、５……溝、６……蓋。
1 to 3 are side sectional views showing one embodiment of the liquid phase epitaxial growth apparatus according to the present invention, and each figure shows a slide boat and a melt holding member in each epitaxial growth layer generation process. This shows the positional relationship of each. DESCRIPTION OF SYMBOLS 1... Slide boat, 2... Crucible (melt holding member), 2a, 2b... Melt storage part, 3... Semiconductor substrate, 4... Groove, 5... Groove, 6... Lid.
Claims (1)
タキシヤル成長層を形成する液相エピタキシヤル
成長装置において、 結晶成長材料を溶かし込んだ融液を収納可能と
するとともに、上部開口部が閉成される底なしの
融液保持部材と、 上記半導体基板が面一となるように嵌め込まれ
る溝が形成されとともに、Ａｌが嵌め込まれる溝
が形成され、これら溝が形成された面が上記融液
保持部材の底に密接してこの融液保持部材の底を
閉成するスライドボートとを備え、 このスライドボートを上記融液保持部材に対し
てスライドさせることにより上記溝に嵌め込まれ
たＡｌを上記融液保持部材内の融液に接触させて
この融液中に溶け込ませることを特徴とする液相
エピタキシヤル成長装置。[Scope of Claim for Utility Model Registration] A liquid phase epitaxial growth apparatus for forming an epitaxial growth layer using AlGaAs on the surface of a semiconductor substrate, which is capable of storing a melt containing a crystal growth material and having an upper opening. A bottomless melt holding member having a closed portion, a groove into which the semiconductor substrate is fitted flush, and a groove into which Al is fitted are formed, and the surface on which these grooves are formed is the groove into which the semiconductor substrate is fitted flush. a slide boat that closes the bottom of the melt retaining member in close contact with the bottom of the melt retaining member, and an aluminum plate fitted into the groove by sliding the slide boat relative to the melt retaining member. A liquid phase epitaxial growth apparatus characterized in that the liquid is brought into contact with the melt in the melt holding member and dissolved in the melt.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16914888U JPH0289825U (en) | 1988-12-28 | 1988-12-28 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16914888U JPH0289825U (en) | 1988-12-28 | 1988-12-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0289825U true JPH0289825U (en) | 1990-07-17 |
Family
ID=31458945
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16914888U Pending JPH0289825U (en) | 1988-12-28 | 1988-12-28 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0289825U (en) |
-
1988
- 1988-12-28 JP JP16914888U patent/JPH0289825U/ja active Pending
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