JPH0211167U - - Google Patents
Info
- Publication number
- JPH0211167U JPH0211167U JP8677888U JP8677888U JPH0211167U JP H0211167 U JPH0211167 U JP H0211167U JP 8677888 U JP8677888 U JP 8677888U JP 8677888 U JP8677888 U JP 8677888U JP H0211167 U JPH0211167 U JP H0211167U
- Authority
- JP
- Japan
- Prior art keywords
- epitaxial growth
- solute
- fixed plate
- solvent
- solvent metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002904 solvent Substances 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 4
- 239000007791 liquid phase Substances 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 2
- 239000007788 liquid Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
第１図は本考案に係る液相エピタキシヤル成長
用溶媒金属の実施例を示す斜視図、第２図はスラ
イドボード法による液相エピタキシヤル成長法に
用いる装置の概略を示す平面図、第３図は第２図
の縦断面図である。
１……ボード（固定板）、２……基板（半導体
）、４……溶媒収納孔、５……スライダ（可動板
）、６……溶媒金属、７……溶質、８……凹部。
FIG. 1 is a perspective view showing an embodiment of the solvent metal for liquid phase epitaxial growth according to the present invention, FIG. 2 is a plan view schematically showing an apparatus used for liquid phase epitaxial growth using the slide board method, The figure is a longitudinal sectional view of FIG. 2. DESCRIPTION OF SYMBOLS 1... Board (fixed plate), 2... Substrate (semiconductor), 4... Solvent storage hole, 5... Slider (movable plate), 6... Solvent metal, 7... Solute, 8... Recessed part.
Claims (1)
収納孔に挿入され、溶質とともに加熱溶解されて
、前記固定板上に載置された半導体の表面にエピ
タキシヤル成長を形成するための液相エピタキシ
ヤル成長用溶媒金属において、該溶媒金属の上面
に溶質収容用の複数個の凹部を点対称に配列して
形成したことを特徴とする液相エピタキシヤル成
長用溶媒金属。 A liquid that is inserted into a solvent storage hole of a movable plate that is slidably mounted on a fixed plate, is heated and dissolved together with a solute, and is used to form epitaxial growth on the surface of a semiconductor placed on the fixed plate. 1. A solvent metal for liquid phase epitaxial growth, characterized in that a plurality of recesses for accommodating a solute are arranged point-symmetrically on the upper surface of the solvent metal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8677888U JPH065428Y2 (en) | 1988-06-30 | 1988-06-30 | Solvent metal for liquid phase epitaxial growth |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8677888U JPH065428Y2 (en) | 1988-06-30 | 1988-06-30 | Solvent metal for liquid phase epitaxial growth |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0211167U true JPH0211167U (en) | 1990-01-24 |
| JPH065428Y2 JPH065428Y2 (en) | 1994-02-09 |
Family
ID=31311419
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8677888U Expired - Lifetime JPH065428Y2 (en) | 1988-06-30 | 1988-06-30 | Solvent metal for liquid phase epitaxial growth |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH065428Y2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51142603U (en) * | 1975-05-12 | 1976-11-17 |
-
1988
- 1988-06-30 JP JP8677888U patent/JPH065428Y2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51142603U (en) * | 1975-05-12 | 1976-11-17 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH065428Y2 (en) | 1994-02-09 |
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