JPH0289434U - - Google Patents

Info

Publication number
JPH0289434U
JPH0289434U JP16846188U JP16846188U JPH0289434U JP H0289434 U JPH0289434 U JP H0289434U JP 16846188 U JP16846188 U JP 16846188U JP 16846188 U JP16846188 U JP 16846188U JP H0289434 U JPH0289434 U JP H0289434U
Authority
JP
Japan
Prior art keywords
sog
film
tft panel
large number
transparent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16846188U
Other languages
Japanese (ja)
Other versions
JPH0645937Y2 (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP16846188U priority Critical patent/JPH0645937Y2/en
Priority to CA000613680A priority patent/CA1313563C/en
Priority to US07/415,889 priority patent/US5084905A/en
Priority to EP89119842A priority patent/EP0366116B1/en
Priority to DE68923054T priority patent/DE68923054T2/en
Priority to KR1019890015469A priority patent/KR940004764B1/en
Publication of JPH0289434U publication Critical patent/JPH0289434U/ja
Application granted granted Critical
Publication of JPH0645937Y2 publication Critical patent/JPH0645937Y2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)

Description

【図面の簡単な説明】[Brief explanation of drawings]

第1図および第2図は本考案の第1の実施例を
示すTFTパネルの一部分の断面図およびTFT
パネルの製造工程図、第3図および第4図は本考
案の第2の実施例を示すTFTパネルの一部分の
断面図およびTFTパネルの製造工程図、第5図
および第6図は本考案の第3の実施例を示すTF
Tパネルの一部分の断面図およびTFTパネルの
製造工程図、第7図および第8図は本考案の第4
の実施例を示すTFTパネルの一部分の断面図お
よびTFTパネルの製造工程図である。 1……透明基板、2……SOG膜、2a……透
明画素電極(金属拡散部分)、T,T,T
,T……薄膜トランジスタ、G……ゲート電極
、3……ゲート絶縁膜、4……i―a―Si半導
体層、S……ソース電極、D……ドレイン電極、
8……下地絶縁膜。
1 and 2 are a cross-sectional view of a portion of a TFT panel and a TFT panel showing a first embodiment of the present invention.
3 and 4 are cross-sectional views of a portion of a TFT panel showing the second embodiment of the present invention, and FIGS. 5 and 6 are diagrams of the manufacturing process of the TFT panel, respectively. TF showing the third embodiment
The sectional view of a part of the T panel and the manufacturing process diagram of the TFT panel, Figures 7 and 8 are the fourth part of the present invention.
FIG. 2 is a cross-sectional view of a portion of a TFT panel and a manufacturing process diagram of the TFT panel showing an example of the present invention. 1... Transparent substrate, 2... SOG film, 2a... Transparent pixel electrode (metal diffusion part), T 1 , T 2 , T 3
, T 4 ... thin film transistor, G ... gate electrode, 3 ... gate insulating film, 4 ... ia-Si semiconductor layer, S ... source electrode, D ... drain electrode,
8... Base insulating film.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 透明基板上に多数の透明画素電極とこの画素電
極を選択駆動する多数の薄膜トランジスタとを配
列形成したTFTパネルにおいて、前記透明基板
上にそのほぼ全面にわたつてSOG(スピンオン
ガラス)膜を形成し、このSOG膜の上に前記薄
膜トランジスタを形成するとともに、前記SOG
膜の所定部分を、導電性金属の拡散により導電性
をもたせた透明画素電極としたことを特徴とする
TFTパネル。
In a TFT panel in which a large number of transparent pixel electrodes and a large number of thin film transistors for selectively driving the pixel electrodes are arranged and formed on a transparent substrate, an SOG (spin-on glass) film is formed over almost the entire surface of the transparent substrate, The thin film transistor is formed on this SOG film, and the SOG
A TFT panel characterized in that a predetermined portion of the film is a transparent pixel electrode made conductive by diffusion of a conductive metal.
JP16846188U 1988-10-26 1988-12-28 TFT panel Expired - Lifetime JPH0645937Y2 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP16846188U JPH0645937Y2 (en) 1988-12-28 1988-12-28 TFT panel
CA000613680A CA1313563C (en) 1988-10-26 1989-09-27 Thin film transistor panel
US07/415,889 US5084905A (en) 1988-10-26 1989-10-02 Thin film transistor panel and manufacturing method thereof
EP89119842A EP0366116B1 (en) 1988-10-26 1989-10-25 Thin film transistor panel and manufacturing method thereof
DE68923054T DE68923054T2 (en) 1988-10-26 1989-10-25 Thin film transistor panel and manufacturing process.
KR1019890015469A KR940004764B1 (en) 1988-10-26 1989-10-26 Thin film transistor panel and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16846188U JPH0645937Y2 (en) 1988-12-28 1988-12-28 TFT panel

Publications (2)

Publication Number Publication Date
JPH0289434U true JPH0289434U (en) 1990-07-16
JPH0645937Y2 JPH0645937Y2 (en) 1994-11-24

Family

ID=31457657

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16846188U Expired - Lifetime JPH0645937Y2 (en) 1988-10-26 1988-12-28 TFT panel

Country Status (1)

Country Link
JP (1) JPH0645937Y2 (en)

Also Published As

Publication number Publication date
JPH0645937Y2 (en) 1994-11-24

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