JPH0287701A - Package for high frequency integrated circuit - Google Patents

Abstract

PURPOSE:To obtain a high frequency package by providing a conductor layer so as to surround a coplanar waveguide structure on the surface of plural thin insulation sheets and connecting inter-conductor layers, the conductor layer, and a ground layer of a high frequency input output terminal of coplanar guide path structure electrically so as to form a frame. CONSTITUTION:A front and a rear side a thin ceramic green sheet is subject to W paste at a prescribed part to form a conductor layer 9. The layers are eliminated, an opening 12 is formed and a W paste is buried. The W paste is coated to a prescribed part of a wall face of a laminated base 8. Finally, a base 8 is overlapped to the conductor layer on the surface of the ceramic or the metallic base 3 while clipping silver solder and it is roasted at a high temperature. The obtained frame 1 is partitioned electrically into inner and outer portions by conductor layers 9, 10 in continuity with the conductor layer or the metallic base 3 on the surface of the base being a ground layer 7 and the inductance and resistance of peered hole 12 are reduced. The equivalent effect to the metallic frame is obtained except the high frequency input output terminal of the coplanar guide path structure in the frame and the high frequency characteristic is improved.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a package for a high frequency integrated circuit for accommodating a semiconductor element such as a high frequency integrated circuit.

[Conventional technology]

Conventionally, in this type of high-frequency integrated circuit package, the frame 1 has a central conductor layer 6 and a ground layer for configuring high-frequency input/output terminals of a coplanar waveguide structure, as shown in FIGS. 8 and 9. 7 is formed on the first ceramic substrate 1
3 and a second ceramic substrate 14 for insulating the terminals formed on the first ceramic substrate 13 are laminated. structure was taken. In addition, the ground layer 7 in the coplanar waveguide structure as a high frequency input/output terminal and the conductor layer on the surface of the ceramic substrate or the metal substrate 3 are connected via a pier hole 12 that penetrates the first ceramic substrate 13 and is electrically conductive. A configuration was adopted in which Note that 15 is a bias voltage supply terminal.

In the case of this type of high-frequency integrated circuit package, the semiconductor element is mounted in the area 2 where the semiconductor element is mounted, and between the electrode of the semiconductor element and the center conductor layer 6 and the ground layer 7 that constitute the high-frequency input/output terminal. After connecting them with bonding wires or the like, a plate-like material (not shown) is attached to seal the semiconductor element, thereby obtaining a high-frequency module having functions such as an amplifier.

(Problems to be Solved by the Invention) However, ring resonance may occur between the high frequency input and output terminals via the first and second ceramic substrates 13.14, or the first and second ceramic substrates 13.14 may There is a drawback that the frequency characteristics of the high-frequency module deteriorates due to the leakage of microwaves through the high-frequency input/output terminals being fed back to the high-frequency input/output terminals.Also, the ground layer 7 at the high-frequency input/output terminals is made of ceramic with only the peer hole 12. Since it is connected to the conductor layer formed on the surface of the ceramic substrate or the metal substrate 3, the potential of the ground layer 7 is sufficiently increased due to the inductance component, resistance component, etc. in the pier hole 12. Alternatively, the potential of the metal substrate 3, that is, the potential of the metal substrate 3 does not reach the ground potential, causing a mismatch at the high frequency terminal, which has the disadvantage that the high frequency characteristics of the high frequency integrated circuit package are limited.

This invention was made to improve or eliminate the above-mentioned drawbacks, and includes suppressing ring resonance in the frame, suppressing feedback of microwave leakage through the frame to the high frequency input/output terminal, and reducing inductance in the peer hole. The purpose of the present invention is to provide a high-frequency integrated circuit package that enables a high-frequency module equipped with a semiconductor element to operate up to an ultra-high frequency region of 30 GHz band by reducing the component and resistance component.

[Means to solve the problem]

In the package for a high frequency integrated circuit according to the present invention, the frame is formed by forming a conductor layer on each surface of a plurality of thin insulating sheets so as to surround a coplanar waveguide structure, and further between each conductor layer and between each conductor layer. It is constructed by electrically connecting the ground layer of a high frequency input/output terminal of a coplanar waveguide structure to a conductive layer or a conductive base of a base on which a conductive layer is formed.

Further, in the present invention, other high frequency input/output terminals other than the high frequency input/output terminal formed on the frame body.

A low frequency input/output terminal, a bias voltage supply terminal, and a grounding terminal can be formed on either the frame or the base.

[Effect]

In this invention, the entire periphery of the coplanar waveguide structure is equivalent to being surrounded by a conductor, suppressing ring resonance,
Feedback of microwave leakage to the high frequency input/output terminal is controlled and the inductance component is reduced.

Further, in the case where terminals other than the high frequency input/output terminal formed on the frame are provided on the base body, shielding is more complete and high frequency characteristics are improved.

〔Example〕

(Embodiment 1) FIGS. 1 to 5 are diagrams for explaining a first embodiment of the present invention, in which FIG. 1 is a perspective view, and FIG. 2 is a high-frequency input/output terminal ( A perspective view explaining the T part in detail, Part 3
The figure is a cross-sectional view taken along the line A-A' in FIG. 2, FIG. 4 is a view of FIG. 2 seen from direction B, and FIG. 5 is a top view of a configuration example in which semiconductor elements are mounted.

In the figure, 1 is a frame of the high-frequency integrated circuit package of the present invention, 2 is a region for mounting a semiconductor element, 3 is a ceramic base or metal base covered with a conductor layer, and 6 is a coplanar waveguide. 7 is a ground layer (of the high frequency input/output terminal) for configuring the coplanar waveguide, 8 is a thin ceramic substrate, and 9 is the inner surface of the thin ceramic substrate 8. , a first conductor layer formed on a plane parallel to the ground layer 7, 1° a second conductor layer formed on a plane perpendicular to the ground layer 7 on the surface of the thin ceramic substrate 8, 11 12 is a peer hole, 15 is a bias voltage supply terminal, 16 is a semiconductor element, 17 is a bypass capacitor, and 18 is a bonding wire.

First, an example of the manufacturing process of the frame body 1 in the first embodiment will be described. First, six thin ceramic green sheets are prepared, and a conductive material such as tungsten paste is applied to predetermined locations on the front and back surfaces of each sheet to prepare for the formation of the first conductor layer 9 and then laminated. Thereafter, a predetermined position is opened by punching or the like to form a hole for the peer hole 12 and a region 2 in which the semiconductor element 16 is to be mounted.

Furthermore, the tungsten paste is filled into the hole for the pier hole 12 to form the pier hole 12. Next, the tungsten paste is applied to a predetermined portion of the wall surface of the laminated thin ceramic substrate 8, that is, an area that does not impair the high frequency characteristics of the high frequency input/output terminal of the coplanar waveguide structure and an area that insulates other terminals. Finally, the laminated ceramic substrate 8 is stacked on the conductor layer formed on the surface of the ceramic substrate or on the metal substrate 3 with a plate of silver solder or the like interposed therebetween, and then fired at a high temperature.

Through this process, the frame 1 is made up of six thin ceramic substrates 8 as shown in FIG. Second conductor layer 9.10
It becomes a structure surrounded by. In addition, in the high frequency input/output terminal portion, as shown in FIG. 3, a first conductor layer 9 is arranged parallel to the central conductor layer 6 and ground layer 7 that constitute the high frequency input/output terminal on both sides of the coplanar waveguide. . Furthermore, as shown in FIGS. 2 and 4, the frame 1 is perpendicular to the center conductor layer 6 and the ground layer 7.
A second conductor layer 10 is formed on the surface, and a pier hole 12 is formed in a plane direction perpendicular to the ground layer 7 to connect the ground layer 7 of the high frequency input/output terminal and the conductor layer on the surface of the ceramic base or the metal base 3. Placed.

The frame 1 of the package obtained as a result has a conductor layer on the surface of the ceramic base, which is the ground layer 7, or a metal base 3.
The inside and outside of the frame 1 are electrically shielded by the first conductor layer 9 and the second conductor layer 1o, which are electrically connected to each other, and the microwave leakage in the conventional ceramic frame is connected to the high frequency input/output terminal. can suppress the reduction of feedback,
Furthermore, the potential of the ground layer 7 at the high frequency input/output terminal of the coplanar waveguide structure, which was insufficient with the pier hole 12, can be brought as close as possible to the potential of the conductor layer on the surface of the ceramic base or the metal base 3, and the pier hole 12
The inductance component and resistance component can be reduced. As a result, except for the high frequency input/output terminals of the coplanar waveguide structure, the frame 1 can obtain an effect virtually equivalent to that of a metal frame, and ring resonance etc. via the frame 1 of the present invention can be eliminated. , the package cavity dimensions are TE+o+
, TE+o mode microwave propagation should be considered in the design. As a result of designing the package cavity based on the above results, the isolation between the high frequency input and output terminals of the package was 30d even in the 30GHz band.
B or more was obtained, and the insertion loss of the high frequency terminal was 0.3 dB or less, which was a low loss.

Next, an example of application to a high frequency module using a package with this structure will be explained.

As shown in FIG. 5, a semiconductor element 16 is included in this package.
, the bypass capacitor 17 is placed in the area 2 of the package using Au.
After attaching using solder such as Sn, the semiconductor element 16
The electrodes, the center conductor layer 6 of the high-frequency input/output terminal, the ground layer 7, the bypass capacitor 17, and the DC voltage supply conductor layer are electrically connected by bonding wires 18, respectively. Finally, the high frequency module is completed by hermetically sealing with a metal lid (not shown). In this case, since the high-frequency terminals and frame body 1 of the package have the above-described structure, even if a high-frequency signal is input to the high-frequency module and amplified by the semiconductor element 16, the high-frequency Leakage at the input/output terminal is not fed back through the frame 1, and the semiconductor element 16
without impairing its functionality. In addition, since the ground layer 7 of the high frequency input/output terminal of the coplanar waveguide structure has a potential that is extremely close to the potential of the conductor layer on the surface of the ceramic base or the metal base 3, the high frequency characteristics of the high frequency output terminal are particularly excellent. There are advantages such as

As is clear from these results, it is clear that the semiconductor device 1 can operate up to ultra-high frequencies in the 30 GHz band, which was difficult to achieve with conventional technology.
Microwave integrated circuits equipped with 6 can now be realized.

(Embodiment 2) FIG. 6 is a side view of the high frequency terminal section of the second embodiment of the present invention, which is a view seen from the direction B in FIG. 2, and corresponds to FIG. 4. 4, the second conductor layer 10 extends to the inner ring of the ground layer 7 and surrounds the coplanar waveguide structure more closely than in FIG. Therefore, the portion of the ground layer 7 near the center conductor layer 6 becomes closer to the potential of the conductor layer on the surface of the ceramic substrate or the metal substrate 3, so that the high frequency characteristics of the high frequency integrated circuit package can be improved. In this embodiment, frame 1. The manufacturing process, cavity design method, etc. are almost the same as in the example.

(Embodiment 3) FIG. 7 is a perspective view of a third embodiment of the present invention, in which terminals other than high-frequency input/output terminals of a coplanar waveguide structure are attached to a ceramic substrate or a metal substrate 3 with glass terminals (
In this example, a ceramic terminal or the like may be used.

In this embodiment, the manufacturing process of the frame 1, the method of designing the cavity, etc. are almost the same as in the first embodiment. In this third embodiment, all terminals except the high-frequency input/output terminals of the coplanar waveguide structure are formed with glass terminals 19 on the ceramic or metal base 3, so that all the terminals except the high-frequency terminals are in the cavity of the package. It has a shielded structure and has particularly excellent high frequency characteristics.

In the examples so far, the case where there are six thin ceramic substrates 8 has been explained, but it goes without saying that the case with three to five thin ceramic substrates 8 is also more effective than the conventional technique, although the effect is slightly smaller. . Moreover, if the number exceeds 6, the effect tends to increase, and it goes without saying that this is necessarily within the scope of the present invention. Furthermore, in the embodiments of the present invention, the number of installed high-frequency integrated circuits is one. However, even if the number of high-frequency integrated circuits is multiple, the features of the present invention will not be impaired. Needless to say. Furthermore, it goes without saying that the effects of the present invention are effective even when there is no peer hole 12.

Generally speaking, in the embodiments of the present invention, the frame 1 is made of a ceramic material and the base is made of a metal material, but it is clear that the use of an insulating material such as plastic also falls within the scope of the present invention.

(Effects of the Invention) As explained above, the present invention provides a frame in which a conductor layer is formed on each surface of a plurality of thin insulating sheets so as to surround a coplanar waveguide structure, and further between each conductor layer. Since each conductor layer is electrically connected to the ground layer of the high frequency input/output terminal of the coplanar waveguide structure and the conductor layer or conductive substrate of the base on which the conductor layer is formed, it is possible to use a conventional ceramic frame. In addition, the potential of the ground layer at the high-frequency input/output terminal of the coplanar waveguide structure, which was insufficient with a peer hole, can be reduced by reducing the potential of the ground layer at the high-frequency input/output terminal of the coplanar waveguide structure by using the conductor layer or metal on the substrate surface. The structure has a structure that can be as close to the potential of the base made of metal as possible, reducing the inductance component and resistance component in the via hole.In addition, the frame body is a pseudo metal frame, except for the high frequency input/output terminal of the coplanar waveguide structure. It is possible to obtain the same effect as the frame body and eliminate ring resonance etc. via the frame body of the present invention, so that high frequency characteristics can be improved.

Furthermore, a device in which all terminals other than the high frequency input/output terminals formed on the frame are formed on the base body has the advantage that shielding is more complete and high frequency characteristics are improved.

[Brief explanation of drawings]

Fig. 1 is a perspective view showing the entire package of this invention;
The figure is a detailed perspective view of the high-frequency terminal in Figure 1, Figure 3 is a cross-sectional view taken along line A-A' in Figure 2, which clearly shows the features of the present invention, and Figure 4 is 2 is a view seen from direction B, FIG. 5 is a top view of a configuration example in which a semiconductor element is mounted, FIG. 6 is a side view of the high frequency terminal section of the second embodiment of the present invention, and FIG. A perspective view of a package representing a third embodiment of the present invention, FIG. 8 is a top view of a conventional package equipped with a conductor layer for a coplanar waveguide, and FIG. 9 is a view seen from direction C in FIG. . In the figure, 1 is a frame, 2 is a region for mounting a semiconductor element, 3 is a ceramic base or metal base covered with a conductor layer, 6 is a center conductor layer, 7 is a ground layer, 8 is a thin ceramic substrate, 9 , 10 is a first degree second conductor layer, 11 is an insulating layer, 12 is a peer hole, 13 is a first ceramic substrate, 1
4 is a second ceramic substrate, 15 is a bias voltage supply terminal, 16 is a semiconductor element, 17 is a bypass capacitor, 1
8 is a bonding wire, and 19 is a glass terminal. Figure Figure 15 Bias voltage supply M3 terminal Figure 1 Glass substrate Figure Figure 2 Ceramic substrate

Claims (2)

[Claims] (1) A high-frequency integrated circuit package comprising a frame body partially having a high-frequency input/output terminal having a coplanar waveguide structure, a base body or conductive base body on which a conductor layer is formed, and a sealing lid, in which the above-mentioned A frame body is formed by forming a conductor layer on each surface of a plurality of thin insulating sheets so as to surround the coplanar waveguide structure, and further forming a conductor layer between each conductor layer and between each conductor layer and the high frequency input of the coplanar waveguide structure. 1. A package for a high-frequency integrated circuit, characterized in that a ground layer of an output terminal is electrically connected to a conductive layer or a conductive substrate of a base on which the conductive layer is formed. (2) Except for the high frequency input/output terminal formed on the frame, other high frequency input/output terminals, low frequency input/output terminals, bias voltage supply terminals, and grounding terminals are formed on either the frame or the base. A package for a high frequency integrated circuit according to claim (1), characterized in that: