JPH0720919Y2 - Package for microwave integrated circuit - Google Patents

Package for microwave integrated circuit

Info

Publication number
JPH0720919Y2
JPH0720919Y2 JP1987006953U JP695387U JPH0720919Y2 JP H0720919 Y2 JPH0720919 Y2 JP H0720919Y2 JP 1987006953 U JP1987006953 U JP 1987006953U JP 695387 U JP695387 U JP 695387U JP H0720919 Y2 JPH0720919 Y2 JP H0720919Y2
Authority
JP
Japan
Prior art keywords
integrated circuit
microwave integrated
package
frame
line conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP1987006953U
Other languages
Japanese (ja)
Other versions
JPS63115228U (en
Inventor
信夫 佐藤
文則 石塚
秀男 巻島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP1987006953U priority Critical patent/JPH0720919Y2/en
Publication of JPS63115228U publication Critical patent/JPS63115228U/ja
Application granted granted Critical
Publication of JPH0720919Y2 publication Critical patent/JPH0720919Y2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Lead Frames For Integrated Circuits (AREA)
  • Waveguides (AREA)
  • Microwave Amplifiers (AREA)

Description

【考案の詳細な説明】 [産業上の利用分野] 本考案は、マイクロ波集積回路用パッケージに関し、さ
らに詳しくは、衛星搭載用等に好適な超高周波特性なら
びに超気密性を必要とするマイクロ波増幅器などを収納
したマイクロ波集積回路用パッケージに関する。
DETAILED DESCRIPTION OF THE INVENTION [Industrial application] The present invention relates to a package for a microwave integrated circuit, and more specifically, a microwave requiring super high frequency characteristics and super airtightness suitable for mounting on a satellite. The present invention relates to a package for a microwave integrated circuit containing an amplifier and the like.

[従来の技術] 従来、マイクロ波集積回路を構成している増幅器等の収
納パッケージとしては、例えば実開昭59-3548号公報に
開示されている第3A図に示すようなものが知られてい
る。ここで、1は図示されていないケース等にねじ等で
取付可能な金属基体であり、2は金属基体1上に設けら
れた金属製あるいはセラミック製の枠体である。なお、
枠体2は電磁シールド効果が得られる点や不要な共振現
象の抑制ができる点で金属製の方が多用されている。
[Prior Art] Conventionally, as a package for storing an amplifier or the like which constitutes a microwave integrated circuit, for example, a package shown in FIG. 3A disclosed in Japanese Utility Model Laid-Open No. 59-3548 is known. There is. Here, 1 is a metal base that can be attached to a case or the like (not shown) with screws or the like, and 2 is a metal or ceramic frame provided on the metal base 1. In addition,
The frame 2 is often made of metal because it has an electromagnetic shield effect and can suppress unnecessary resonance phenomena.

3はマイクロ波集積回路増幅器であり、枠体2内の金属
基体1上に取付けられていて、一方、枠体2の方向を同
じくする平行壁にはセラミック端子として構成された高
周波入出力端子4やバイアス電圧供給用端子5が複数
個、図示のように配列されている。すなわち、4Aは高周
波入力用マイクロストリップ基板、4Bは高周波出力用マ
イクロストリップ基板、また5Aはバイアス電圧供給用の
マイクロストリップ基板であり、6はこれらのストリッ
プ基板上に配設されたマイクロストリップによる表面導
体または線路導体、更に7はこれらのストリップ基板上
に重ねるようにして枠壁2Aに埋設されたセラミックス等
による絶縁体である。
A microwave integrated circuit amplifier 3 is mounted on the metal substrate 1 in the frame body 2, while a high frequency input / output terminal 4 is formed as a ceramic terminal on the parallel walls in the same direction of the frame body 2. A plurality of bias voltage supply terminals 5 are arranged as shown in the drawing. That is, 4A is a microstrip substrate for high frequency input, 4B is a microstrip substrate for high frequency output, 5A is a microstrip substrate for supplying bias voltage, and 6 is a surface by microstrips arranged on these strips substrate. A conductor or a line conductor, and 7 is an insulator made of ceramics or the like embedded in the frame wall 2A so as to be superposed on these strip substrates.

かくして、マイクロ波集積回路増幅器3と、導体6とは
ボンディングワイヤ8Aや金リボン8Bによって電気的に接
続される。9は枠体2の上面に覆蓋される蓋部材、10は
金属基体1を不図示のケースに固定するためのねじ用の
孔である。
Thus, the microwave integrated circuit amplifier 3 and the conductor 6 are electrically connected by the bonding wire 8A and the gold ribbon 8B. Reference numeral 9 is a lid member which covers the upper surface of the frame body 2, and 10 is a screw hole for fixing the metal base 1 to a case (not shown).

しかしながらこのような従来のマイクロ波集積回路用パ
ッケージにおいては、バイアス電圧供給用端子5および
高周波入出力端子4のいずれもがそのマイクロストリッ
プ基板上に絶縁体7を配設した構造をなし、また、マイ
クロストリップ基板上から導体6の電極を確保するため
の絶縁体7の方がマイクロストリップ基板(4A,4B,5A)
より短く形成され、かつ高周波入出力端子4とバイアス
電圧供給用端子5とが同一方向の枠壁2Aに並列に配置さ
れていた。
However, in such a conventional microwave integrated circuit package, both the bias voltage supply terminal 5 and the high frequency input / output terminal 4 have a structure in which the insulator 7 is disposed on the microstrip substrate. The insulator 7 for securing the electrode of the conductor 6 on the microstrip substrate is the microstrip substrate (4A, 4B, 5A)
The high-frequency input / output terminal 4 and the bias voltage supply terminal 5 were formed shorter and were arranged in parallel to the frame wall 2A in the same direction.

ところで、マイクロ波の超高周波化を図るためには、高
周波の特性として、その入出力方向とは直角な方向の密
封枠内幅が狭ければ狭いほど高周波化が図られるが、第
3A図からも明らかなように、同方向の枠壁2Aに配列され
た複数の高周波入出力端子4とバイアス電圧供給用端子
5とを互いに近接させるようにしてその間の間隔を縮め
るようにすると、枠壁2A自体の構造が機械的に弱くなる
のみならず、電気的特性も劣化する。
By the way, in order to achieve an ultrahigh frequency of microwaves, as a high frequency characteristic, the narrower the width of the sealing frame in the direction perpendicular to the input / output direction, the higher the frequency.
As is clear from FIG. 3A, when the plurality of high frequency input / output terminals 4 and the bias voltage supply terminals 5 arranged on the frame wall 2A in the same direction are brought close to each other and the distance between them is shortened, Not only the structure of the frame wall 2A itself becomes mechanically weak, but also the electrical characteristics are deteriorated.

また、高周波入出力端子4とバイアス電圧供給用端子5
とを枠体2の同一枠壁に配置しているので、バイアス電
圧供給用端子5における線路導体6と金属基体1との間
に十分な絶縁性が保たれるように配慮する必要がある上
に、バイアス電圧供給用端子5や高周波入出力端子4の
線路導体6とマイクロ波集積回路増幅器3の回路端子と
の間にボンディングワイヤ8Aや金リボン8Bによる接続配
線を実施するときに短絡を防止しなければならず、これ
らの理由によってもまた、端子間の間隔は余り狭くする
訳にはゆかず、そのためにこれらの端子4および5が配
設される枠壁長さが長くなり、高周波化の障害となって
いた。
In addition, the high frequency input / output terminal 4 and the bias voltage supply terminal 5
And are arranged on the same frame wall of the frame body 2, it is necessary to consider that sufficient insulation is maintained between the line conductor 6 and the metal substrate 1 in the bias voltage supply terminal 5. In addition, a short circuit is prevented when the connection wiring by the bonding wire 8A or the gold ribbon 8B is performed between the line conductor 6 of the bias voltage supply terminal 5 or the high frequency input / output terminal 4 and the circuit terminal of the microwave integrated circuit amplifier 3. For these reasons, the distance between the terminals cannot be made too narrow, and therefore the length of the frame wall in which these terminals 4 and 5 are arranged becomes long, and the high frequency is increased. Had been an obstacle.

更にまた、上述の端子4や5においては、第3C図に示す
ようにセラミック製のマイクロストリップ基板4A,4Bお
よび5Aとその上に設けられる絶縁体7とを一体化してい
るが、線路導体6が電極パターンとしてその一面に形成
される基板4A,4Bおよび5Aと、同じくセラミックで形成
されてよい絶縁体7との形状が異なるために、製造工程
においてわざわざ2種類の形状のグリーンシートを切出
さねばならず、製造工程がそれだけ増えることによって
コスト低減上好ましくない。
Furthermore, in the terminals 4 and 5 described above, as shown in FIG. 3C, the ceramic microstrip substrates 4A, 4B and 5A are integrated with the insulator 7 provided thereon. Since the shapes of the substrates 4A, 4B and 5A formed on one surface as an electrode pattern are different from the shape of the insulator 7 which may also be formed of ceramic, the two green sheet shapes are purposely cut out in the manufacturing process. This is not preferable in terms of cost reduction because the number of manufacturing processes is increased accordingly.

特に、従来例の最大の欠点は、セラミック基板4A,4Bお
よび5Aや同じくセラミックスの絶縁体7と金属基体1や
金属枠2との間の気密性が悪いという点にある。すなわ
ち、かかるマイクロ波集積回路用パッケージにおいて、
その実装後、不活性ガス等を枠内に封入していかなる環
境下、例えば衛星搭載用の場合のように宇宙環境下にお
いても安定した性能が保持されるようにしており、ため
には、その気密性が極めて重要である。しかるに従来、
上述したようなセラミックスと金属との接合部は例えば
接着剤等を用いて処理されるので、なじみが悪く十分な
気密性が得られないという点があった。
In particular, the greatest drawback of the conventional example is that the airtightness between the ceramic substrates 4A, 4B and 5A and the ceramic insulator 7 and the metal base 1 and the metal frame 2 is poor. That is, in such a microwave integrated circuit package,
After its mounting, an inert gas or the like is enclosed in the frame so that stable performance can be maintained in any environment, for example, in the space environment such as when mounting on a satellite. Airtightness is extremely important. However, in the past,
Since the above-mentioned joint between the ceramic and the metal is treated by using, for example, an adhesive or the like, there is a point that the fitting is poor and sufficient airtightness cannot be obtained.

[考案が解決しようとする問題点] すなわち、以上に述べたように、従来のマイクロ波集積
回路用パッケージにおいては、種々な問題点があり、特
にそのうちでも、バイアス電圧供給用端子はパッケージ
内の高密度化と共にその配設数も多くなる傾向があるの
で、簡単な製造工程でコンパクトな形態を有し、しかも
気密が保たれ易いバイアス電圧供給用端子を具え、高周
波化が図れるように小型化されたパッケージが望まれ
る。
[Problems to be Solved by the Invention] That is, as described above, the conventional microwave integrated circuit package has various problems. In particular, the bias voltage supply terminal is As the density is increased, the number of arrangements tends to increase, so it has a compact form with a simple manufacturing process, and also has a bias voltage supply terminal that is easy to maintain airtightness and downsized to achieve higher frequencies. The desired package is desired.

本考案の目的は、上述従来の問題点に着目し、その解決
を図るべくバイアス電圧供給用端子を、金属枠や金属基
体との間の気密性において優れ、かつ簡単な製造工程で
得られるような部材を用いたものとなし、更にこのよう
なバイアス電圧供給用端子を適切に高周波入出力端子と
は分離して枠壁に配設することによりパッケージを小型
化し、高周波化を図ることのできるマイクロ波集積回路
用パッケージを提供することにある。
An object of the present invention is to focus on the above-mentioned conventional problems, and to solve the problems, a bias voltage supply terminal can be obtained by a simple manufacturing process with excellent airtightness between a metal frame and a metal base. It is possible to reduce the size of the package and increase the frequency by appropriately disposing such a bias voltage supply terminal on the frame wall separately from the high frequency input / output terminals. It is to provide a package for a microwave integrated circuit.

[問題点を解決するための手段] かかる目的を達成するために、本考案は、マイクロ波集
積回路を取り付けた基体と、該基体上に前記マイクロ波
集積回路を取り囲んで設けられた方形の枠体とを有する
マイクロ波集積回路用パッケージにおいて、各部の寸法
が同一である方形形状の第1および第2セラミック部材
を上下に積層し、該第1および第2セラミック部材の層
間に少なくとも1条の線路導体を介装し、該線路導体
を、前記第1セラミック部材に沿ってその上面にまで曲
折延在させて両端部を露出させ、前記第1および第2セ
ラミック部材による積層体の外周部に沿って前記線路導
体の配線方向と交差する方向に、金属帯を、前記線路導
体の両端部との間に所定の間隔を保つようにして周設し
た前記マイクロ波集積回路の複数のバイアス電圧供給用
端子部材を有し、該端子部材をその上面が前記枠体下面
と接するようにして前記基体に埋設し、前記金属帯を介
して前記端子部材の外周部を前記基体および前記枠体に
接合させるようにしたことを特徴とするものである。
[Means for Solving the Problems] In order to achieve such an object, the present invention provides a base body on which a microwave integrated circuit is attached, and a rectangular frame provided on the base body to surround the microwave integrated circuit. In a package for a microwave integrated circuit having a body, first and second rectangular ceramic members each having the same size of each part are vertically stacked, and at least one strip is provided between layers of the first and second ceramic members. A line conductor is interposed, and the line conductor is bent and extended along the first ceramic member to its upper surface to expose both ends, and the line conductor is provided on the outer peripheral portion of the laminated body formed of the first and second ceramic members. A plurality of vias of the microwave integrated circuit, in which a metal strip is circumferentially provided along a direction intersecting the wiring direction of the line conductor so as to maintain a predetermined gap between the metal strip and both ends of the line conductor. Voltage supply terminal member, the terminal member is embedded in the base body with its upper surface in contact with the lower surface of the frame body, and the outer peripheral portion of the terminal member is covered with the metal strip through the base body and the frame. It is characterized by being joined to the body.

[作用] 本考案マイクロ波集積回路用パッケージによれば、バイ
アス電圧供給用端子を構成するセラミック端子部材の金
属基体および金属枠と接合させる部分に金属帯を囲繞す
るようになしたことによって、金属同士のなじみが得ら
れて気密性を高めることができ、また、前記端子部材を
金属基体に埋設可能なことから基体上部に接合される枠
体に絶縁体埋込みのための溝加工を要せず、それだけ、
枠体の気密・封止にかかわる個所を減らし、気密性の向
上に貢献する。更にまた、導体を保持する上下のセラミ
ック板の形状を同一形状とすることができるので、その
製造工程の簡略化に貢献し、更にまたほぼC字型形状に
形成した導体によって端子部材の上面に水平に端子が形
成されるので完全に金属枠や基体および金属帯とは絶縁
された状態でボンディング等により電気的接続が得ら
れ、特にこのように構成したバイアス電圧供給端子を高
周波入出力端子が配設される枠壁と直交する枠壁に配列
させることによって、高周波化を図るのに好適なマイク
ロ波集積回路用パッケージの提供が可能である。
[Operation] According to the microwave integrated circuit package of the present invention, the metal band is surrounded by the portion of the ceramic terminal member forming the bias voltage supply terminal that is joined to the metal base and the metal frame. Familiarity with each other can be obtained and airtightness can be improved, and since the terminal member can be embedded in the metal base, no groove processing for embedding the insulator is required in the frame body joined to the upper part of the base body. ,that's all,
It contributes to the improvement of airtightness by reducing the number of parts related to airtightness / sealing of the frame. Furthermore, since the upper and lower ceramic plates that hold the conductors can have the same shape, it contributes to the simplification of the manufacturing process, and the conductors formed in the substantially C-shape also allow the upper surface of the terminal member to be formed. Since the terminals are formed horizontally, electrical connection can be obtained by bonding etc. in a state of being completely insulated from the metal frame, the base body and the metal strip. In particular, the bias voltage supply terminal configured in this way can be used as a high frequency input / output terminal. By arranging them on the frame wall orthogonal to the frame wall to be arranged, it is possible to provide a microwave integrated circuit package suitable for achieving higher frequencies.

[実施例] 以下に、図面を参照して本考案の実施例を具体的に説明
する。
[Embodiment] An embodiment of the present invention will be specifically described below with reference to the drawings.

第1A図〜第1D図は本考案にかかるバイアス電圧供給用端
子の構成の一例を示す。ここで、15はバイアス電圧供給
用端子であり、端子15は上下に積層されたセラミック製
の第1絶縁基板15Aと第2絶縁基板15B(いずれもセラミ
ック部材という)とを有し、その双方は同じ寸法の方形
形状をなす。16はこれら第1セラミック部材15Aと第2
セラミック部材15Bとの間に介装された一条ないし複数
条のの線路導体であり、本例では一条の例を示すが、線
路導体16は上部側の第1セラミック部材15Aに沿って折
曲げられたC字型の形状とし、その両端部が第1セラミ
ック部材15Aの上面に導かれている。
1A to 1D show an example of the structure of the bias voltage supply terminal according to the present invention. Here, reference numeral 15 is a bias voltage supply terminal, and the terminal 15 has a first insulating substrate 15A and a second insulating substrate 15B (both are referred to as ceramic members) made of ceramic, which are vertically stacked. Make a square shape with the same dimensions. 16 is the first ceramic member 15A and the second
This is a single-line or multiple-line line conductor interposed between the ceramic member 15B and the example of the single line is shown in this example, but the line conductor 16 is bent along the upper first ceramic member 15A. It has a C-shape and both ends thereof are guided to the upper surface of the first ceramic member 15A.

17は上述の状態で第1セラミック部材15Aと第2セラミ
ック部材15Bとを重ね合せた上から線路導体16の配設方
向とは直交する方向に周設された金属帯であり、この金
属帯17によって後述するように金属基板21および金属枠
22とこの端子15との間の接着用メタライズ層が構成され
るものである。従って、金属帯17の帯幅はほぼ枠壁の厚
さあればよく、また、金属帯17と線路導体16の両側端部
との間には所定の間隔が保たれるようにする。
Reference numeral 17 denotes a metal band which is provided around the first ceramic member 15A and the second ceramic member 15B in the above-mentioned state in a direction orthogonal to the direction in which the line conductor 16 is arranged. As will be described later, the metal substrate 21 and the metal frame
An adhesive metallization layer between 22 and this terminal 15 is constituted. Therefore, the band width of the metal band 17 may be substantially the thickness of the frame wall, and a predetermined space is maintained between the metal band 17 and both end portions of the line conductor 16.

第2A図および第2B図は複数の上述したようなバイアス電
圧供給用端子15を高周波入出力用端子4が設けられる枠
壁22Aとは直角な方向の枠壁22B側に配設した例を示し、
本例では金属基体21に一段高めた段差部21Aを設けその
段差部21Aに端子15を埋設した上に金属枠体22が取付け
られている。
FIGS. 2A and 2B show an example in which a plurality of the bias voltage supply terminals 15 as described above are arranged on the side of the frame wall 22B perpendicular to the frame wall 22A on which the high frequency input / output terminal 4 is provided. ,
In this example, the metal base 21 is provided with a raised step portion 21A, the terminal 15 is embedded in the step portion 21A, and the metal frame body 22 is attached.

そこで、このように構成したマイクロ波集積回路用パッ
ケージにおいては、そのバイアス電圧供給用端子15を構
成するセラミック部材15Aおよび15Bの周囲部に金属帯17
を周設し、この金属帯17を介して金属基体21および金属
枠体22と接合されるようにしてあるので、金属同士のな
じみが良好なことにより接着性が良く、従って、気密効
果を高めることができると共に、端子15の周囲が金属帯
17,金属基体21および金属枠体22によって完全に囲繞さ
れた形態となるため電磁シールド効果をも向上させるこ
とができる。また、第2A図および第2B図に示すように構
成することによって、高周波入出力端子4が設けられる
枠壁22Aの長手方向の幅を狭めることが可能となり、そ
れだけ高周波化を図ることができると共に、パッケーシ
自体を強固かつ気密性の高いものとすることができる。
Therefore, in the microwave integrated circuit package configured as described above, the metal strip 17 is provided around the ceramic members 15A and 15B forming the bias voltage supply terminal 15.
Since the metal base 21 and the metal frame body 22 are bonded to each other through the metal band 17, the adhesion between the metals is good and therefore the airtightness is enhanced. In addition to being able to
17, Since it is completely enclosed by the metal base 21 and the metal frame 22, the electromagnetic shield effect can be improved. Further, by configuring as shown in FIG. 2A and FIG. 2B, it becomes possible to narrow the width in the longitudinal direction of the frame wall 22A on which the high frequency input / output terminal 4 is provided, and it is possible to increase the frequency accordingly. , The package itself can be made strong and highly airtight.

[考案の効果] 以上説明してきたように、本考案によれば、マイクロ波
集積回路を取り付けた基体と、該基体上に前記マイクロ
波集積回路を取り囲んで設けられた方形の枠体とを有す
るマイクロ波集積回路用パッケージにおいて、各部の寸
法が同一である方形形状の第1および第2セラミック部
材を上下に積層し、該第1および第2セラミック部材の
層間に少なくとも1条の線路導体を介装し、該線路導体
を、前記第1セラミック部材に沿ってその上面にまで曲
折延在させて両端部を露出させ、前記第1および第2セ
ラミック部材による積層体の外周部に沿って前記線路導
体の配線方向と交差する方向に、金属帯を、前記線路導
体の両端部との間に所定の間隔を保つようにして周設し
た前記マイクロ波集積回路の複数のバイアス電圧供給用
端子部材を有し、該端子部材をその上面が前記枠体下面
と接するようにして前記基体に埋設し、前記金属帯を介
して前記端子部材の外周部を前記基体および前記枠体に
接合させるようにしたので、前記線路導体の第1セラミ
ック部材に沿って、その上面にまで曲折延在された両端
部をそれぞれ接続配線を介して電源側およびマイクロ波
集積回路側に電気的に接続することができ、金属基体お
よび枠体とバイアス電圧供給用端子との間の気密性を向
上させることができるのみならず、電磁的シールド効果
が高められ、また構造的にも強固なものとすることがで
き、また上下のセラミック部材を同形のものとすること
によって製造工程を簡略化することができ、更にまた、
高周波入出力端子および上記のようなバイアス電圧供給
用端子を互いに直交する平行壁にそれぞれ配設すること
によってパッケージの高周波入出力端子が配設される枠
壁の幅を短縮させ適用周波数の高周波化を図ることがで
きる。
[Effects of the Invention] As described above, according to the present invention, the base has the microwave integrated circuit attached thereto, and the rectangular frame body is provided on the base so as to surround the microwave integrated circuit. In a package for a microwave integrated circuit, first and second rectangular ceramic members having the same size in each part are vertically stacked, and at least one line conductor is interposed between the first and second ceramic members. The line conductor is bent along the first ceramic member to the upper surface thereof to expose both ends thereof, and the line is provided along the outer peripheral portion of the laminated body of the first and second ceramic members. A plurality of bias voltage supply ends of the microwave integrated circuit in which a metal band is provided in a direction intersecting with the wiring direction of the conductor so as to keep a predetermined space between the metal strip and both ends of the line conductor. A sub-member, the terminal member is embedded in the base body so that the upper surface of the terminal member contacts the lower surface of the frame body, and the outer peripheral portion of the terminal member is joined to the base body and the frame body via the metal band. Therefore, both ends of the line conductor, which are bent and extended to the upper surface of the line conductor, are electrically connected to the power supply side and the microwave integrated circuit side through the connection wirings. Not only can the airtightness between the metal substrate and the frame and the bias voltage supply terminal be improved, but the electromagnetic shielding effect can be enhanced and the structure can be made strong. It is possible to simplify the manufacturing process by making the upper and lower ceramic members of the same shape.
By disposing the high-frequency input / output terminal and the bias voltage supply terminal as described above on the parallel walls which are orthogonal to each other, the width of the frame wall on which the high-frequency input / output terminal of the package is disposed is shortened to increase the applied frequency. Can be achieved.

【図面の簡単な説明】[Brief description of drawings]

第1A図は本考案にかかるバイアス電圧供給用端子の構成
の一例を示す斜視図、 第1B図,第1C図および第1D図は、それぞれ、第1A図のA
方向からの上面図,B方向からの側面図およびC方向から
の側面図、 第2A図は本考案マイクロ波集積回路用パッケージの構成
の一例を示す斜視図、 第2B図は第2A図のY−Y′線断面図、 第3A図および第3B図は従来のマイクロ波集積回路用パッ
ケージの構成の二例を示すそれぞれ斜視図、 第3C図は第3A図に示したパッケージにおける高周波入出
力端子およびバイアス電圧供給用端子の構成を示す斜視
図である。 1,21……金属基体、2,22……金属枠体、2A,21A,21B……
枠壁、3……マイクロ波集積回路増幅器、4……高周波
入出力端子、5,15……バイアス電圧供給用端子、6,16…
…線路導体、7……絶縁体、8A……ボンディングワイ
ヤ、8B……金リボン、9……蓋部材、15A,15B……絶縁
基板(セラミック部材)、17……金属帯。
FIG. 1A is a perspective view showing an example of the structure of a bias voltage supply terminal according to the present invention, and FIGS. 1B, 1C and 1D are respectively the A of FIG. 1A.
Direction, a side view from the B direction and a side view from the C direction, FIG. 2A is a perspective view showing an example of the structure of the microwave integrated circuit package of the present invention, and FIG. 2B is the Y view of FIG. 2A. -Y 'sectional view, FIGS. 3A and 3B are perspective views showing two examples of the structure of a conventional microwave integrated circuit package, and FIG. 3C is a high-frequency input / output terminal in the package shown in FIG. 3A. FIG. 3 is a perspective view showing a configuration of a bias voltage supply terminal. 1,21 …… Metal base, 2,22 …… Metal frame, 2A, 21A, 21B ……
Frame wall, 3 ... Microwave integrated circuit amplifier, 4 ... High frequency input / output terminal, 5,15 ... Bias voltage supply terminal, 6,16 ...
Line conductor, 7 Insulator, 8A Bonding wire, 8B Gold ribbon, 9 Lid member, 15A, 15B Insulation substrate (ceramic member), 17 Metal band.

Claims (2)

【実用新案登録請求の範囲】[Scope of utility model registration request] 【請求項1】マイクロ波集積回路を取り付けた基体と、
該基体上に前記マイクロ波集積回路を取り囲んで設けら
れた方形の枠体とを有するマイクロ波集積回路用パッケ
ージにおいて、 各部の寸法が同一である方形形状の第1および第2セラ
ミック部材を上下に積層し、該第1および第2セラミッ
ク部材の層間に少なくとも1条の線路導体を介装し、該
線路導体を、前記第1セラミック部材に沿ってその上面
にまで曲折延在させて両端部を露出させ、前記第1およ
び第2セラミック部材による積層体の外周部に沿って前
記線路導体の配線方向と交差する方向に、金属帯を、前
記線路導体の両端部との間に所定の間隔を保つようにし
て周設した前記マイクロ波集積回路の複数のバイアス電
圧供給用端子部材を有し、該端子部材をその上面が前記
枠体下面と接するようにして前記基体に埋設し、前記金
属帯を介して前記端子部材の外周部を前記基体および前
記枠体に接合させるようにしたことを特徴とするマイク
ロ波集積回路用パッケージ。
1. A substrate on which a microwave integrated circuit is mounted,
In a package for a microwave integrated circuit having a rectangular frame body surrounding the microwave integrated circuit on the base body, first and second rectangular ceramic members having the same size in each part are vertically arranged. At least one line conductor is laminated between layers of the first and second ceramic members, and the line conductor is bent and extended along the first ceramic member to its upper surface so that both ends thereof are bent. A metal strip is exposed and a predetermined interval is provided between both ends of the line conductor in a direction intersecting the wiring direction of the line conductor along the outer periphery of the laminated body formed of the first and second ceramic members. A plurality of bias voltage supply terminal members for the microwave integrated circuit, which are circumferentially provided so as to be kept, and the terminal members are embedded in the base body so that their upper surfaces are in contact with the lower surface of the frame; A package for a microwave integrated circuit, wherein an outer peripheral portion of the terminal member is joined to the base body and the frame body via a band.
【請求項2】実用新案登録請求の範囲第1項記載のマイ
クロ波集積回路用パッケージにおいて、 前記複数のバイアス電圧供給用の端子部材は、高周波入
出力用の端子が配設される平行枠壁とは交差する方向の
枠壁に配設されることを特徴とするマイクロ波集積回路
用パッケージ。
2. A microwave integrated circuit package according to claim 1, wherein the plurality of bias voltage supply terminal members are parallel frame walls on which terminals for high frequency input / output are arranged. A package for a microwave integrated circuit, which is disposed on a frame wall in a direction intersecting with.
JP1987006953U 1987-01-22 1987-01-22 Package for microwave integrated circuit Expired - Lifetime JPH0720919Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1987006953U JPH0720919Y2 (en) 1987-01-22 1987-01-22 Package for microwave integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1987006953U JPH0720919Y2 (en) 1987-01-22 1987-01-22 Package for microwave integrated circuit

Publications (2)

Publication Number Publication Date
JPS63115228U JPS63115228U (en) 1988-07-25
JPH0720919Y2 true JPH0720919Y2 (en) 1995-05-15

Family

ID=30789953

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1987006953U Expired - Lifetime JPH0720919Y2 (en) 1987-01-22 1987-01-22 Package for microwave integrated circuit

Country Status (1)

Country Link
JP (1) JPH0720919Y2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4817924B2 (en) * 2006-03-29 2011-11-16 株式会社東芝 Semiconductor package
JP5886637B2 (en) * 2012-01-24 2016-03-16 京セラ株式会社 Cooling substrate, element storage package, and mounting structure

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58190046A (en) * 1982-04-30 1983-11-05 Fujitsu Ltd Semiconductor device

Also Published As

Publication number Publication date
JPS63115228U (en) 1988-07-25

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