JP2758814B2 - Package for mounting high-frequency semiconductor element and mounting apparatus using the same - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a package for mounting a high-frequency semiconductor device and a mounting apparatus for the high-frequency semiconductor device using the package.

[0002]

2. Description of the Related Art FIG. 5A is a perspective view showing a first conventional example of a package for mounting a high-frequency semiconductor element.
(B) shows the shape of the seal cap, and FIG.
FIG. 6 is a schematic diagram illustrating a cross-sectional structure of a signal line portion in a state where a high-frequency semiconductor element is mounted on the package of FIG.
The package in this conventional example uses a metal container 27, and high-frequency input / output and DC supply to the high-frequency semiconductor element 23 housed inside are performed by glass terminals 28 provided on the side walls of the metal container 27. The glass terminal center conductor 29 provided on the glass terminal 28 is disposed so as to penetrate from the outside of the metal container 27 to the inside and protrude therefrom.
0 for electrical connection. The total number of internal connection points of this conventional package is eight. High frequency semiconductor device 2
After mounting 3, the seal cap 14 is seam welded,
The metal container 27 is formed by brazing or bonding.
The airtightness is ensured by connecting to the upper surface of the. Although the glass terminal 28 has excellent airtightness, in a conventional package of this type, little attention has been paid to the characteristic impedance of the glass terminal 28, so that the reflection loss at the glass terminal 28 increases at high frequencies. However, it can be used only in a frequency band of about several GHz at most. Therefore, packages having a structure in which the characteristic impedance of the high-frequency input / output terminal is set to a predetermined value, the reflection loss is reduced, and the device can be used in a higher frequency band have been proposed one after another. 6 (a), 6 (b) and 6 (c) show a second conventional example. FIG. 6 (a) is a perspective view showing the structure of a package, and FIG. 6 (b) shows the shape of a seal cap. FIG. 6C shows a cross-sectional structure of a signal line portion. This conventional example has a structure in which the characteristic impedance of a high-frequency input / output terminal is taken into consideration. The package frame 1 is made of ceramic, the high-frequency input / output unit is a microstrip,
A planar waveguide structure 32 such as a grounded coplanar;
The impedance is matched. Further, an internal stage 3 is provided along the inner wall of the package frame 1 to facilitate electrical connection with the high-frequency semiconductor element 23, and package internal electrode terminal patterns 2a, 2b are provided on the upper surface of the internal stage 3. It is arranged. With this package, the total number of connection points inside the package when the high-frequency semiconductor element 23 is mounted has been reduced from eight in the first conventional example to four. The high-frequency semiconductor mounting device is usually connected to another external device using a coaxial cable. Therefore, it is necessary to provide a coaxial connector as the input / output connection structure of the high-frequency semiconductor mounting device. Therefore, the packages of the first and second prior arts must be housed and fixed in a housing or support frame larger than the package to which the coaxial connector can be attached, and internally connected to the coaxial connector. FIG. 7 (a)
FIGS. 7A and 7B show a high-frequency semiconductor mounting device in the case of using the second conventional high-frequency semiconductor element mounting package, and FIG. 7A shows the entire configuration of the high-frequency semiconductor mounting device. FIG. 7B is a perspective view, and FIG.
FIG. 2A is a schematic diagram illustrating a cross-sectional structure of a signal line portion of FIG.
In the figure, a package 18 on which a high-frequency semiconductor element is mounted and an impedance matching substrate 33 having a waveguide pattern 34 formed on the surface of an insulating plate are provided inside a metal housing 19 and attached to the side wall of the metal housing 19. The center conductor of the glass coaxial bead 16, which is a component of the high-frequency coaxial connector, the waveguide pattern 34 on the impedance matching substrate 33, and the high-frequency semiconductor element mounted package 18
Are electrically and mechanically connected by solder, silver paste, or the like.
Finally, the high-frequency semiconductor mounting device is completed by attaching the coaxial pin 20 and the high-frequency coaxial connector plug 21 which are components of the high-frequency coaxial connector. In this case, the package coaxial beads 16
The total number of connection points outside the package up to 4 is four.

[0003]

SUMMARY OF THE INVENTION As described above, the first
In the conventional package for mounting a high-frequency semiconductor element, as described above, the characteristic impedance of the glass terminal 28 for high-frequency input / output is not sufficiently considered, so that the reflection loss is large and the operating frequency bandwidth is about several GHz. ,
When a high-frequency semiconductor element 23 having higher high-frequency performance is mounted, there is a disadvantage that the performance cannot be sufficiently brought out. Even if the glass terminal 28 is designed and manufactured so as to match the characteristic impedance, the relay wiring board 30 must be used for the internal connection between the glass terminal center conductor 29 and the high-frequency semiconductor element 23. The total number of internal connection points cannot be reduced to eight, and the reflection loss relating to the internal connection cannot be reduced. When the device is formed using the high-frequency semiconductor device mounting package of the first conventional example, the glass coaxial bead 16 is formed in the same manner as described in the high-frequency semiconductor mounting device using the second conventional example package. A connection portion 36 between the center conductor and the waveguide pattern 34 on the impedance matching substrate 33 and a high-frequency input / output lead connection portion 37 between the impedance matching substrate 33 and the package 18 on which the high-frequency semiconductor element is mounted, and a total of four positions for input and output , The reflection loss associated with the connection is increased, and the high-frequency characteristics are impaired. Further, in this conventional high-frequency semiconductor mounting device, a large metal housing 19 is required to accommodate the impedance matching substrate 33, and the device becomes large, and the accompanying increase in the wiring length causes an increase in transmission loss. There is a disadvantage that the high-frequency performance as a high-frequency semiconductor mounting device is deteriorated. Further, when the metal housing 19 becomes large, a mechanical stress is applied to the connection portion due to a difference in thermal expansion coefficient between the package 18 on which the high-frequency semiconductor element is mounted and the impedance matching substrate 33.
Poor connection easily occurs at the connection portion 36 between the center conductor of the glass coaxial bead 16 and the waveguide pattern 34 on the impedance matching substrate 33, and maintains an electrically stable connection for a long time in an environment with a large temperature fluctuation. There are drawbacks that make it difficult. In order to avoid this problem, it is necessary to use a material having a thermal expansion coefficient close to that of the package 18 on which the high-frequency semiconductor element is mounted or the impedance matching substrate 33 as the material of the metal housing 19. In the case of alloys and the like, there is a problem that the material cost is high and the manufacturing cost is increased due to poor workability. In addition, the impedance matching substrate 33 accommodated in the metal housing 19, the connection portion 36 of the glass coaxial bead central conductor and the waveguide pattern, and the high frequency input / output lead connection portion 37 are all connected by solder or silver paste. Therefore, once assembled, it is difficult to remove the device for repair or the like, and individual components cannot be reused, leading to an increase in manufacturing cost. On the other hand, in the above-described high frequency semiconductor element mounting package of the second conventional example, since the planar waveguide structure 32 is employed in the high frequency input / output section, the reflection loss in the high frequency input / output section is reduced. Further, since the internal stage 3 on which the package internal electrode terminal patterns 2a and 2b are formed is arranged along the inner wall of the package frame 1,
The total number of internal connection points when the high-frequency semiconductor element 23 is mounted is reduced to four. However, when the device is implemented, since the high-frequency input / output is performed by the high-frequency input / output lead 31, it cannot be directly connected to the glass coaxial bead 16, but is connected via the impedance matching substrate 33. Therefore, as described above, it is unavoidable that the reflection loss at the external connection point of the package 18 on which the high-frequency semiconductor element is mounted and the transmission loss due to the increase in the wiring length, the increase in the size of the device, and the increase in the manufacturing cost cannot be avoided. There was a problem.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned drawbacks and problems of the prior art. The first object of the present invention is to reduce reflection loss and transmission loss of a signal line and to make it easy to implement a device. An object of the present invention is to provide a package for mounting a high-frequency semiconductor element. A second object of the present invention is to use a metal material that is inexpensive and has excellent workability as a metal housing, is easy to assemble, and can reuse individual components. An object of the present invention is to provide a small high-frequency semiconductor mounting device. Further, a third object of the present invention is to eliminate the cause of poor connection that is likely to occur when the device is implemented, and to maintain an electrically stable connection for a long time even in an environment with a large temperature fluctuation. An object of the present invention is to provide a package for mounting a high-frequency semiconductor element and a high-frequency semiconductor mounting device using the same.

[0005]

In order to achieve the object of the present invention, the present invention provides a cavity for accommodating a high-frequency semiconductor device, and an electrode terminal for making a predetermined electrical connection with the electrode terminal of the semiconductor device. In the high-frequency semiconductor element mounting package in which the pattern is provided inside the package, the frame forming the side wall of the package is made of ceramic or insulating resin, and the electrode terminal pattern is formed on the upper surface along the inner wall of the frame. A stage made of the formed insulator is provided, and a through hole is provided in at least one or more wall surfaces of the frame, and a high-frequency coaxial connector is provided.
Directly mates with the center conductor of the coaxial pin
High-frequency antenna with a central conductor structure that can be connected
A high-frequency semiconductor element mounting package in which a shaft terminal is provided in the through-hole and the center conductor of the high-frequency coaxial terminal is electrically and mechanically firmly connected to the electrode terminal pattern on the stage to be integrally formed. Is what you do. Also,
The package for mounting a high-frequency semiconductor element of the present invention is provided with a stage made of an insulator having an electrode terminal pattern formed on an upper surface along an inner wall of a frame constituting a side wall of the package, and at least one of the frames. side walls made of a metal member, provided wall in the through hole of the frame made of the metal member, a high frequency coaxial connector components
It can be directly fitted and connected to the center conductor of a coaxial pin.
A high-frequency coaxial terminal with a possible center conductor structure
The high-frequency coaxial terminal is provided in the through-hole, and the center conductor of the high-frequency coaxial terminal is firmly electrically and mechanically connected to the electrode terminal pattern on the stage to be integrally formed. further,
The package for mounting a high-frequency semiconductor element of the present invention uses a glass coaxial bead, which is a component of a high-frequency coaxial connector, for a high-frequency coaxial terminal disposed on a wall surface of a frame that constitutes a side wall of the package. The glass coaxial beads can also be embedded and firmly fixed in the provided through holes. According to the present invention, there is provided a high-frequency semiconductor mounting apparatus using the above-described high-frequency semiconductor element mounting package, wherein a metal housing for supporting and fixing the package is provided. In a high-frequency semiconductor mounting device provided with at least one high-frequency coaxial connector as an input / output terminal, a high-frequency coaxial connector is connected to a center conductor of the high- frequency coaxial terminal of the package.
The central conductor of the coaxial pin, which is a component part of the connector, is directly connected and connected, and the high-frequency coaxial connector plug is fixed and supported by the side wall of the metal housing, so that the connector plug comes into close contact with the package. This is a high-frequency semiconductor mounting device having a structure.

[0006]

In the present invention, a high-frequency coaxial terminal, which can be connected by directly fitting coaxial pins, which are components of a high-frequency coaxial connector, is integrated with a package side wall as a high-frequency semiconductor element mounting package. This eliminates the need for an impedance matching substrate that was conventionally required for connecting to a coaxial connector when the device was implemented. Therefore, the connection portion between the glass coaxial bead for the high-frequency coaxial connector and the impedance matching substrate, which is the main cause of the connection failure in the device, is eliminated, and the connection reliability is remarkably improved. In addition, since the impedance matching substrate is not used in the device, the number of connection points is reduced, and the total transmission line length is shortened. As a result, the reflection loss and the transmission loss are reduced. The characteristics are improved. At the same time, the size of the device can be reduced. Further, in the high-frequency semiconductor mounting apparatus using the package of the present invention, after the coaxial pin which is a component of the high-frequency coaxial connector is directly fitted to the high-frequency coaxial terminal of the package, the high-frequency coaxial connector plug is connected to the side wall of the metal housing. Since the package is fixed and supported by the high-frequency coaxial connector plug, the package is directly pressed down and fixed, so there is no need to equip the package itself with a fixing means. The package can be easily removed from the package. Therefore, the assembling is easy and the metal casing can be reused. In addition, in the high-frequency semiconductor mounting device of the present invention, the package and the high-frequency coaxial connector are directly fitted and connected by a coaxial pin having a spring property, and the mechanical stress is reduced. It is not necessary to match the thermal expansion coefficients of Therefore, an inexpensive metal material having excellent workability can be used as the metal housing.

[0007]

Embodiments of the present invention will be described below in more detail with reference to the drawings. <Embodiment 1> FIGS. 1 (a), 1 (b) and 1 (c) show the configuration of a package for mounting a high-frequency semiconductor device exemplified in this embodiment. FIG. 1 (a) shows the configuration of the entire package. FIG. 1B is a schematic view showing a cross-sectional structure of a signal line portion of the package of FIG. 1A. FIG. 1B is a diagram showing the seal cap of FIG. is there. In the figure, a metal base 10 is a metal base on which a high-frequency semiconductor element 23 (see FIG. 4) is mounted. On this metal base 10, a package frame 1 formed of ceramic or insulating resin to be a package side wall is mounted. ,
The package frame brazing portion 11 is fixed by a brazing material. The package frame 1 has package internal electrode terminal patterns 2a and 2b for performing predetermined electrical connection with the high-frequency semiconductor element 23, an internal stage 3 formed on an upper surface, and an external electrode lead 5 for DC supply. The external stage 4 and the external stage 4 are formed simultaneously. Further, through holes 6 are provided in the left and right wall surfaces of the package frame 1, and the through holes 6 have a center conductor that can be directly fitted to a coaxial pin 20 (see FIG. 4) that is a component of the high-frequency coaxial connector. The high-frequency coaxial terminal 7 is formed, and the high-frequency coaxial terminal center conductor 8 is electrically and mechanically firmly connected to the high-frequency signal package internal electrode terminal pattern 2a on the internal stage 3 by means such as brazing. The connecting portion 9 of the connected high-frequency coaxial terminal center conductor and the package internal electrode terminal pattern is formed, and the high-frequency coaxial terminal 7 is formed.
Are integrated with the package frame 1. When the package frame 1 is made of ceramic, a ceramic green sheet on which a package internal electrode terminal pattern 2a for high-frequency signals and a package internal electrode terminal pattern 2b for DC supply extended to the outside are printed with conductive ink. One sheet is prepared, and a green sheet not printed on the upper and lower sides or a ground pattern printed thereon is laminated so as to have a predetermined package thickness,
It is made by firing after molding. In the case where an insulating resin is used for the package frame 1, one of the above-described predetermined package internal electrode terminal patterns 2a, 2b formed by copper etching on a copper-clad insulating resin sheet is prepared. Then, another insulating resin sheet is laminated and molded. The external electrode lead 5 for DC supply is
It is connected to the internal electrode terminal pattern 2b for direct current supply extending to the upper part of the external stage 4 by means such as brazing. In this embodiment, the package frame 1 is fixed on the metal base 10 with a brazing material. However, the metal base 10 is formed simultaneously with the package frame 1 using the same material as the package frame 1. May be. Further, in this embodiment, the case where two high-frequency coaxial terminals 7 are provided has been described. However, it goes without saying that the case where one or three or more high-frequency coaxial terminals 7 are included in the scope of the present invention. . As in the present embodiment, the high frequency coaxial connector is directly connected by forming the input / output terminal of the high frequency signal into a coaxial terminal shape to which the coaxial pin 20 which is a component of the high frequency coaxial connector can be directly fitted. This eliminates the need for the impedance matching substrate 33 (see FIG. 4) that was conventionally required to connect the package and the high-frequency coaxial connector when the device was implemented. Further, since the coaxial terminal 7 provided in the package of this embodiment is completely integrated with the package frame 1 in the forming process, the high-frequency coaxial terminal center conductor 8 and the package internal electrode terminal pattern 2a for high-frequency signals are used. A connection failure does not occur at the connection section 9. Note that the implementation of the device will be described in detail in the following description of an embodiment (Embodiment 4) of a high-frequency semiconductor mounting device using the package of the present embodiment.

<Embodiment 2> FIGS. 2 (a), 2 (b) and 2 (c)
FIG. 2A shows a package for mounting a high-frequency semiconductor device exemplified in this embodiment. FIG. 2A is a perspective view showing the entire configuration of the package, and FIG. 2B is a seal of FIG. 2A. FIG. 2C shows a cap, and FIG. 2C is a diagram showing a cross-sectional structure of a signal line portion in FIG. 2A. This embodiment is similar to the first embodiment.
In this embodiment, the left and right package frames 1 forming the high-frequency coaxial terminals 7 are cut off and replaced with a metal material, and the portions of the package frame 1 excluding the metal side walls 15 are the same as those of the first embodiment. The structure is the same as that described above. That is, the package frame 1 is formed by laminating and molding a sheet-like ceramic or insulating resin,
An internal stage 3 having package internal electrode terminal patterns 2a and 2b formed on an upper plane and an external stage 4 for mounting a package external electrode lead 5 for direct current supply are simultaneously formed simultaneously. The metal side wall 15 is provided with a through hole 6 at a predetermined position, and the through hole 6 is provided with a coaxial pin 20 which is a component of the high-frequency coaxial connector (see FIG. 4).
A high-frequency coaxial terminal 7 having a center conductor 8 which can be directly fitted with the metal frame is formed. Thereafter, the metal side wall 15 is combined with the package frame 1 and the metal base 10 to form a brazing material at the package frame brazing portion 11. Fixed by
It is integrated as a package. As in the first embodiment, when the frame side wall forming the high-frequency coaxial terminal 7 is made of ceramic or insulating resin, formation of the through hole 6 involves some difficulty, and the package frame 1 is liable to crack or warp. In this embodiment, since the through holes 6 are provided in the metal side wall 15, cracks and distortions do not occur. Further, by using the metal side wall 15, it is possible to form the high-frequency coaxial terminal 7 only in the state of the metal side wall 15 before fixing it in combination with the package frame 1 and the metal base 10. improves. In this embodiment, the metal side wall 15 and the metal base 10 are prepared as separate constituent members. However, the package may be formed using a combination of the two and processed as a single U-shaped metal member. good.

<Embodiment 3> FIGS. 3A and 3B are schematic views showing a cross-sectional structure of a signal line portion of a package for mounting a high-frequency semiconductor device exemplified in this embodiment. Note that FIG.
(B) is a schematic diagram showing the structure of the glass coaxial bead of FIG. 3 (a). This embodiment is an example in which the portion of the high-frequency coaxial terminal 7 in the package of the first embodiment is formed by glass coaxial beads 16 which are components of the high-frequency coaxial connector. That is, similarly to the first embodiment, the package frame 1 is formed of ceramic or insulating resin, including the side wall portion forming the high-frequency coaxial terminal 7, and has the same shape and structure. The through-hole 6 has a diameter capable of inserting the glass coaxial bead 16, and the glass coaxial bead 16 is brazed in the through-hole 6. Then, the high-frequency coaxial terminal center conductor 8 is connected to the package internal electrode terminal pattern for high-frequency signals. 2a is connected by means such as brazing. As described above, when a commercially available glass coaxial bead 16 is used as a component of the coaxial connector, the material cost of the component increases, but the high frequency coaxial terminal 7 shown in the first and second embodiments is formed. Since the production equipment involved is not required,
The package of the present invention can be easily manufactured, and can be manufactured with a small capital investment. In this embodiment, the package in which the glass frame coaxial beads 16 are brazed and the package frame side wall is formed of ceramic or insulating resin is shown. However, the package having the metal side wall 15 shown in the second embodiment is used. Needless to say, the case where the glass coaxial beads 16 are used is also included in the scope of the present invention.

<Embodiment 4> FIGS. 4 (a) and 4 (b) show a high-frequency device manufactured using the high-frequency semiconductor element mounting package of the present invention described in the first, second and third embodiments. FIG. 4 is a perspective view showing the entire configuration of the semiconductor mounting device, and FIG.
FIG. 4B is a schematic diagram illustrating a cross-sectional structure of a signal line portion in FIG. In the high-frequency semiconductor mounting device of the present embodiment,
On the side wall of the U-shaped metal housing 19, a high-frequency connector plug mounting screw hole 2 of the high-frequency coaxial connector plug 21 is provided at a position facing the high-frequency coaxial terminal 7 of the package of the present invention.
6 and a coaxial terminal is provided on the upper part of the inner wall of the metal housing 19 so that the high-frequency coaxial terminal center conductor 8 does not hit the side wall of the housing when the package 18 on which the high-frequency semiconductor element is mounted is mounted on the metal housing 19. A passage groove 25 for the central conductor is formed. In the procedure of assembling the device, first, the package 18 on which the high-frequency semiconductor element is mounted is arranged on the bottom of the metal housing 19. Next, the coaxial pin 20 is fitted into the high-frequency coaxial terminal center conductor 8 protruding into the high-frequency connector plug mounting screw hole 26 of the high-frequency coaxial connector plug 21. Finally, the high-frequency coaxial connector plug 21 is screwed into the high-frequency coaxial connector plug mounting screw hole 26, and fixed to the outer wall of the package 18 on which the high-frequency semiconductor element is mounted so that the high-frequency coaxial connector plug 21 comes into close contact. As described above, in the high-frequency semiconductor mounting apparatus using the package of the present invention, the high-frequency semiconductor element mounted package 18 is fixed only by tightening the high-frequency coaxial connector plug 21 via the metal housing 19.
At the same time as the assembly is extremely easy, the package 18 on which the high-frequency semiconductor element is mounted can be easily removed and replaced simply by loosening the high-frequency coaxial connector plug 21, so that the metal housing 19 is repeatedly reused even in the case of repair. can do. In addition, since the impedance matching substrate 33, which was conventionally required for connecting the package and the high-frequency coaxial connector at the time of realizing the device, becomes unnecessary, the total number of connection points between the package and the high-frequency coaxial connector is reduced from the conventional four. The number is reduced to two (the connection portion 9 between the input / output high-frequency coaxial terminal center conductor and the package internal electrode terminal pattern), and the total transmission path length is reduced by the impedance matching substrate 33. Therefore, the size of the device can be reduced, the reflection loss at the connection portion and the transmission loss of the line are reduced, and the high-frequency characteristics of the device are greatly improved. Further, since the impedance matching substrate 33 is not used, the connection portion between the glass coaxial bead 16 for the high-frequency coaxial connector and the impedance matching substrate 33, which is a main cause of the connection failure in the conventional device, can be eliminated. Connection reliability is further improved. In addition, the high-frequency semiconductor element mounting package 18
Coaxial pin 20 having a spring property with the high-frequency coaxial connector
Therefore, since the mechanical stress is relieved, there is no need to make the thermal expansion coefficients of the package and the metal housing the same. Therefore, an inexpensive metal material having excellent workability can be used as the metal housing.

[0011]

As described in detail above, by using the package for mounting a high-frequency semiconductor device of the present invention, it is possible to directly connect the package and the coaxial connector. The high-frequency semiconductor mounting device can greatly improve the high-frequency characteristics as compared with the conventional device, and can reduce the size of the device. In addition, a housing material that is inexpensive and has excellent workability can be used, the number of assembling steps can be significantly reduced, and the housing can be repeatedly used, so that manufacturing and running costs can be reduced. Further, the connection reliability inside the device is improved, and the industrial value is extremely high in terms of performance, productivity, cost and reliability.

[Brief description of the drawings]

FIG. 1 is a schematic diagram showing a configuration of a high-frequency semiconductor element mounting package exemplified in Embodiment 1 of the present invention.

FIG. 2 is a schematic diagram showing a configuration of a package for mounting a high-frequency semiconductor element exemplified in Embodiment 2 of the present invention.

FIG. 3 is a schematic diagram showing a configuration of a package for mounting a high-frequency semiconductor element exemplified in Embodiment 3 of the present invention.

FIG. 4 is a schematic diagram illustrating a configuration of a high-frequency semiconductor mounting device exemplified in Embodiment 4 of the present invention.

FIG. 5 is a schematic diagram showing a first example of a conventional package for mounting a high-frequency semiconductor.

FIG. 6 is a perspective view showing a second example of a conventional high-frequency semiconductor mounting package.

FIG. 7 is a schematic view showing an example of a conventional high-frequency semiconductor mounting device.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Package frame 2a ... Package internal electrode terminal pattern 2b ... Package internal electrode terminal pattern 3 ... Internal stage 4 ... External stage 5 ... DC supply external electrode lead 6 ... Through hole 7 ... High frequency coaxial terminal 8 ... High frequency coaxial terminal center conductor 9: Connection part between high frequency coaxial terminal center conductor and package internal electrode terminal pattern 10 ... Metal base 11 ... Package frame brazing part 12 ... Dielectric 13 ... Cavity 14 ... Seal cap 15 ... Metal side wall 16 ... Glass coaxial bead 17 ... Glass Coaxial bead brazing portion 18: package with mounted high-frequency semiconductor element 19: metal housing 20: coaxial pin 21: high-frequency coaxial connector plug 22: fitting portion 23: high-frequency semiconductor element 24: connecting means such as gold wire 25: coaxial terminal Passage groove for center conductor 26 ... High frequency connector Lug mounting screw hole 27 ... Metal container 28 ... Glass terminal 29 ... Glass terminal center conductor 30 ... Wiring board 31 ... High frequency input / output lead 32 ... Planar waveguide structure 33 ... Impedance matching board 34 ... Wave pattern 35 ... DC supply terminal 36 … Connection between the glass coaxial bead center conductor and the waveguide pattern 37… High frequency input / output lead connection

────────────────────────────────────────────────── ─── Continuation of the front page (56) References JP-A-3-283640 (JP, A) JP-A-62-2406 (JP, A) (58) Fields investigated (Int. Cl. ⁶ , DB name) H01L 23/04

Claims (4)

(57) [Claims] 1. A high-frequency semiconductor element mounting package comprising: a cavity for accommodating a high-frequency semiconductor element; and an electrode terminal pattern for making a predetermined electrical connection with an electrode terminal of the semiconductor element. The frame forming the side wall of the package is made of ceramic or insulating resin, and along the inner wall of the frame,
A stage made of an insulator having the electrode terminal pattern formed on the upper surface is provided, and at least one of the frames is provided.
One or more walls in a through hole of the high-frequency coaxial connector configuration
Directly fits and connects to the center conductor of the coaxial pin
High-frequency coaxial terminal with a center conductor structure that can be
And a central conductor of the high-frequency coaxial terminal is electrically and mechanically connected to an electrode terminal pattern on the stage to be integrally formed. . 2. A package for mounting a high-frequency semiconductor element, wherein a cavity for accommodating a high-frequency semiconductor element and an electrode terminal pattern for making a predetermined electrical connection with an electrode terminal of the semiconductor element are provided inside the package. Along the inner wall of the frame that constitutes the side wall of the package,
A stage made of an insulator having the electrode terminal pattern formed on an upper surface is provided, and at least one stage of the frame is provided.
One or more side walls are made of a metal member, and a through hole is provided in a wall surface of a frame made of the metal member, and a high-frequency coaxial connector is provided.
Directly fits and connects to the center conductor of the component coaxial pin
-Frequency coaxial terminal with a center conductor structure that can operate
And a central conductor of the high-frequency coaxial terminal is electrically and mechanically connected to an electrode terminal pattern on the stage to be integrally formed. . 3. The high-frequency coaxial terminal according to claim 1, wherein a glass coaxial bead, which is a component of the high-frequency coaxial connector, is provided as a high-frequency coaxial terminal disposed on a wall surface of a frame forming a side wall of a package on which the high-frequency semiconductor element is mounted. A package for mounting a high-frequency semiconductor element, wherein the glass coaxial bead is embedded and fixed in a through hole provided in a wall surface of the frame. 4. A package for mounting a high-frequency semiconductor device according to claim 1, comprising a metal housing for supporting and fixing the package, and a side wall of the metal housing for externally transmitting a high-frequency signal. In a high-frequency semiconductor mounting device having at least one high-frequency coaxial connector as an input / output terminal, a center conductor of the high-frequency coaxial terminal of the package is provided.
Inside the coaxial pin, a component of the high-frequency coaxial connector
The high-frequency coaxial connector plug is fixed and supported by a side wall of the metal housing, and the connector plug is in close contact with the package. Semiconductor mounting equipment.