JPH0282598A - Manufacture of ceramic multilayer board - Google Patents
Manufacture of ceramic multilayer boardInfo
- Publication number
- JPH0282598A JPH0282598A JP23260388A JP23260388A JPH0282598A JP H0282598 A JPH0282598 A JP H0282598A JP 23260388 A JP23260388 A JP 23260388A JP 23260388 A JP23260388 A JP 23260388A JP H0282598 A JPH0282598 A JP H0282598A
- Authority
- JP
- Japan
- Prior art keywords
- mixture
- aluminum nitride
- zirconium oxide
- layers
- ceramic multilayer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000919 ceramic Substances 0.000 title claims abstract description 28
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000000203 mixture Substances 0.000 claims abstract description 24
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims abstract description 9
- 239000000463 material Substances 0.000 claims abstract description 9
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910001928 zirconium oxide Inorganic materials 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims abstract description 6
- 239000011368 organic material Substances 0.000 claims abstract 6
- 239000004020 conductor Substances 0.000 claims abstract 4
- 239000012212 insulator Substances 0.000 claims abstract 3
- 239000000758 substrate Substances 0.000 claims description 21
- 239000000126 substance Substances 0.000 claims description 9
- 238000010304 firing Methods 0.000 claims description 8
- UMVBXBACMIOFDO-UHFFFAOYSA-N [N].[Si] Chemical compound [N].[Si] UMVBXBACMIOFDO-UHFFFAOYSA-N 0.000 claims 1
- 239000011810 insulating material Substances 0.000 claims 1
- ZVWKZXLXHLZXLS-UHFFFAOYSA-N zirconium nitride Chemical compound [Zr]#N ZVWKZXLXHLZXLS-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 4
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 abstract description 4
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract description 2
- 239000010410 layer Substances 0.000 abstract 3
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- 239000012044 organic layer Substances 0.000 abstract 1
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 9
- 238000005245 sintering Methods 0.000 description 5
- 239000002904 solvent Substances 0.000 description 4
- 239000011230 binding agent Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 3
- 238000009413 insulation Methods 0.000 description 2
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000003854 Surface Print Methods 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
Landscapes
- Production Of Multi-Layered Print Wiring Board (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、電子回路の配線基板として利用されるセラミ
ック多層基板の製造方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a method of manufacturing a ceramic multilayer substrate used as a wiring board for electronic circuits.
（従来の技術）
近年、窒化けい素（以下、Ｓｉ、Ｎ、と記す）は高絶縁
性、高強度、低誘電率であるが、熱伝導率が低いため、
Ｓｉ、 Ｎ４の上に高熱伝導性と高絶縁性を持った窒化
アルミニウム（以下、 ＡＱＮと記す）を結合させたセ
ラミック基板が注目を浴びている。(Prior art) In recent years, silicon nitride (hereinafter referred to as Si, N) has high insulation properties, high strength, and low dielectric constant, but because of its low thermal conductivity,
Ceramic substrates that combine Si and N4 with aluminum nitride (hereinafter referred to as AQN), which has high thermal conductivity and high insulation properties, are attracting attention.
従来のこの種の多層基板の製造方法について、第４図に
より説明する。A conventional method for manufacturing this type of multilayer board will be explained with reference to FIG.
同図は従来のセラミック多層基板の断面図で、まず、Ｓ
ｉ、Ｎ、を焼結したセラミック基板１の表面に、後に導
電路となる所定のパターンを描く空隙２ａを設けた第１
層２をＡＧＮで形成する１次に、めっき処理によって上
記の空隙２ａに金、銀、銅などの金属で導電路３を形成
する。This figure is a cross-sectional view of a conventional ceramic multilayer board.
A first ceramic substrate 1 is provided with gaps 2a forming a predetermined pattern that will later become conductive paths on the surface of a ceramic substrate 1 sintered with N.
First, the layer 2 is formed of AGN, and then a conductive path 3 is formed using a metal such as gold, silver, or copper in the void 2a by plating.
次に、上記の導電路３と導通する導通路４となる連結孔
を設けた第２層５をＡＱＮで形成した後、焼成し、めっ
き処理によって」−記の導通路４と導電路６を形成する
。Next, after forming a second layer 5 with a connecting hole that becomes a conductive path 4 that is connected to the above-mentioned conductive path 3 using AQN, it is fired and then plated to form a conductive path 4 and a conductive path 6 as described above. Form.
（発明が解決しようとする課題）
しかしながら、上記の構成では、ＡＱＮの第１層２およ
び第２層５を焼結する工程の歩留りが悪いという問題が
あった。また、導電路３，６を形成するために独立した
めっき処理工程が必要であるため、量産性がないという
問題もあった。さらには、焼成した後、 ＡＱＮを焼結
した第１層２および第２層５にめっきによって導電路を
形成するため、ＡＱＮの焼結体と導電路３，６とが十分
に結合しない場合があり、信頼性が低いという問題もあ
った。(Problems to be Solved by the Invention) However, the above configuration has a problem in that the yield of the step of sintering the first layer 2 and the second layer 5 of AQN is poor. Furthermore, since an independent plating process is required to form the conductive paths 3 and 6, there is also the problem that mass production is not possible. Furthermore, since conductive paths are formed by plating on the first layer 2 and second layer 5 made of sintered AQN after firing, the sintered body of AQN and the conductive paths 3 and 6 may not be sufficiently bonded. There was also the problem of low reliability.
本発明は上記の問題を解決するもので、量産性よく高信
頼性のセラミック多層基板の製造方法を提供するもので
ある。The present invention solves the above problems and provides a method for manufacturing a ceramic multilayer substrate that is mass-producible and highly reliable.
（課題を解決するための手段） 上記の課題を解決するため、本発明は＋ Ｓｉ、Ｎ。(Means for solving problems) In order to solve the above problems, the present invention provides +Si,N.
の焼結体の上に、Ａ（ＩＮと酸化ジルコニウム（以下、
ＺｒＯ□と記す）と有機物質の混合物の層と、ＡＱＮと
有機物の混合物の層を交互に複数印刷した後、焼成する
ものである。A (IN and zirconium oxide (hereinafter referred to as
After alternately printing a plurality of layers of a mixture of ZrO□ and an organic substance and layers of a mixture of AQN and an organic substance, they are fired.
（作 用）
上記の構成により、ＡＱＮとＺｒＯ，が焼成時に反応し
、高電導性および高熱伝導性を有する窒化ジルコニウム
が生成する。従って、焼成前に印刷したＡＩＩＮとＺｒ
Ｏ□と有機物質の混合物の層は、焼成と同時に導電路と
なるため、量産性が高い上に、基板との結合が完全で高
い信頼性を有するセラミック多層基板が得られる。(Function) With the above configuration, AQN and ZrO react during firing to produce zirconium nitride having high electrical conductivity and high thermal conductivity. Therefore, AIIN and Zr printed before firing
Since the layer of the mixture of O□ and the organic substance becomes a conductive path at the same time as it is fired, it is possible to obtain a ceramic multilayer substrate that is not only highly mass-producible but also perfectly bonded to the substrate and has high reliability.
（実施例）
本発明の一実施例について、第１図ないし第３図により
説明する。まず、ＡＱＮ粉末に１．焼結助剤として酸化
イツトリウム（Ｖｚｏａ）を２重量％、結合剤としてポ
リビニルブチラールを５重量％、溶媒としてイソプロピ
ルアルコールを加えたペースト状の混合物（以下、ペー
ストＡと記す）と。(Example) An example of the present invention will be described with reference to FIGS. 1 to 3. First, add 1. A paste-like mixture (hereinafter referred to as paste A) containing 2% by weight of yttrium oxide (Vzoa) as a sintering aid, 5% by weight of polyvinyl butyral as a binder, and isopropyl alcohol as a solvent.
（７，ｒ（］２）。、 ３３ （ＡＱＮ）ｏ、 ｅ−な
る組成に配合したＡＱＮとＺｒＯ２の混合粉に、結合剤
としてポリビニルブチラールを５重量％、溶媒としてイ
ソプロピルアルコールを加えたペースト状の混合物（以
下、ペーストＢと記す）を用意する。次に、第１図のよ
うに、縦×横×厚さがそれぞれ３０ Ｘ ３０ Ｘ ０
．５ｍｍのＡＱＮのセラミック基板７を焼結して形成し
、その表面にペーストＡを用いて全面にスクリーン印刷
して第１ペーストＡ層８を形成し、乾燥させる。次に、
その表面にペーストＢを用いて第２図（ａ）のようなパ
ターンでスクリーン印刷して第１ペーストＢパターン９
を形成し、乾燥させる。次に、その表面に再びペースト
Ａ用いて第２図（ｂ）に示すように連結孔１０ａを設け
たパターンでスクリーン印刷し、第２ペーストＡ層１０
を形成し、乾燥させる。さらに、その表面にペーストＢ
を用いて第２図（Ｃ）に示すようなパターンで印刷し、
第２ペーストＢパターン１１を形成し、乾燥させる。(7, r(]2)., 33 (AQN)o, e-A paste-like mixture of AQN and ZrO2 blended into a composition with 5% by weight of polyvinyl butyral as a binder and isopropyl alcohol as a solvent was added. Prepare a mixture (hereinafter referred to as paste B).Next, as shown in Figure 1, the length x width x thickness is 30 x 30 x 0.
．． A 5 mm AQN ceramic substrate 7 is formed by sintering, and the first paste A layer 8 is formed by screen printing on the entire surface using paste A, and then dried. next,
Using Paste B on the surface, screen print a pattern as shown in Figure 2(a) to form the first Paste B pattern 9.
form and dry. Next, paste A is used again on the surface to screen print a pattern with connecting holes 10a as shown in FIG. 2(b), and a second paste A layer 10
form and dry. Furthermore, paste B on the surface
Print the pattern as shown in Figure 2 (C) using
A second paste B pattern 11 is formed and dried.
このようにして形成した各層の乾燥後の厚さは。What is the thickness of each layer formed in this way after drying?
約５０μｍであった。It was about 50 μm.
次に、この積層体を脱脂した後、Ｉ＋２！素雰囲気中で
１８００℃、２時間の焼成を行った。Next, after degreasing this laminate, I+2! Firing was performed at 1800° C. for 2 hours in an elementary atmosphere.
このようにして得られたセラミック多層基板は、第１ペ
ーストＡパターンおよび第２ペーストＢパターン９およ
びＩｆがそれぞれ金属に等しい導通性を示し、第３図に
示すように導電路１２ａと］−２ｂおよび１３ａと１３
ｂが形成される。In the thus obtained ceramic multilayer board, the first paste A pattern and the second paste B patterns 9 and If each exhibit conductivity equal to that of metal, and as shown in FIG. and 13a and 13
b is formed.
これらの導電路１２ａ 、 １２ｂ 、 １３ａおよび
Ｌ３ｂの導通の有無を確認したところ、導電路＋２ａお
よび１２ｂは連結孔１０ａから露呈するＡとＡ′および
１３とＢ′の間で、導電路１３ａおよび１３ｂはその両
端ＣとＣ′およびＤとＤ′の間で、金属に等しい導電性
を示した。また、連結孔１０ａで連結が想定される導電
路１２ａおよび１３ａの導通性も良好であった。When checking the presence or absence of conduction of these conductive paths 12a, 12b, 13a and L3b, it was found that conductive paths +2a and 12b are between A and A' and 13 and B' exposed from the connecting hole 10a, and conductive paths 13a and 13b are connected to each other. exhibited conductivity equivalent to that of a metal between its ends C and C' and between D and D'. Further, the conductivity of the conductive paths 12a and 13a, which are supposed to be connected through the connecting hole 10a, was also good.
また、第２ペーストＡ層１０で隔てられた導電路１２ａ
および１２ｂと１３ｂは導通せず、絶縁層として有効に
働いた。この導電路１２ａ 、 ＋２ｂ 、 １３ａお
よび１３ｂを構成する物質をＸ線回折で分析したところ
、窒化ジルコニウムおよびアルミニウムの酸窒化物（Ａ
（ＩＯＮ）の複合体であることがわがった。この導電路
を構成する物質は焼成と同時に生成しており、第１ペー
ストＡ層８および第２ペーストＡ層１０との結合性も充
分で、完全に一体化していた。Further, the conductive path 12a separated by the second paste A layer 10
Also, 12b and 13b were not electrically connected and functioned effectively as an insulating layer. When the materials constituting the conductive paths 12a, +2b, 13a and 13b were analyzed by X-ray diffraction, they were found to be zirconium nitride and aluminum oxynitride (A
It was found to be a complex of (ION). The material constituting the conductive path was produced at the same time as the firing, and had sufficient bonding properties with the first paste A layer 8 and the second paste A layer 10, and were completely integrated.
また、この導電路１２ａ 、 １２ｂ 、 １３ａおよ
び１３ｂを構成する物質はセラミックスであるため、耐
久性が高く、耐酸化性においても空気中で５００℃、２
時間の熱処理を行っても変化は認められなかった。Furthermore, since the material constituting the conductive paths 12a, 12b, 13a and 13b is made of ceramic, it has high durability and oxidation resistance when heated in air at 500°C and 200°C.
No change was observed even after heat treatment for several hours.
なお１本実施例では、２種類のペーストＡおよびＢを得
るための結合剤としてポリビニルブチラールを用いたが
、他の樹脂を用いてもよく、また、溶媒にイソプロピル
アルコールを用いたが、他の溶媒を用いてもよい。In this example, polyvinyl butyral was used as a binder to obtain two types of pastes A and B, but other resins may also be used.Although isopropyl alcohol was used as a solvent, other resins may be used. A solvent may also be used.
また、ＡＱＮの焼結助剤として酸化イツトリウムを添加
したが、他の有効な焼結助剤を加えても、また加えなく
ても本発明が有効であることには変わりない。Further, although yttrium oxide was added as a sintering aid for AQN, the present invention remains effective even if other effective sintering aids are added or not.
一方、導電路］ ２ ａ Ｈ１２ｂ ｔ ］ ３ ａお
よび１：）ｂを構成する物質が生成するＡＱＮとＺｒＯ
２の起こす反応は、モル比でＡＱＮ ： ＺｒＯ２−３
： １で起こる。従って、ＡＧＮ ： ＺｒＯ□＝３：
１の組成で配合した混合物を導電路に用いるのが最も有
効であるが。On the other hand, AQN and ZrO produced by the substances constituting the conductive path ] 2 a H12b t ] 3 a and 1:) b
The reaction caused by 2 has a molar ratio of AQN: ZrO2-3
: Occurs in 1. Therefore, AGN: ZrO□=3:
It is most effective to use a mixture of composition 1 for the conductive path.
（ＡＱＮ）−（ＺｒＯｚ ） １−で表わした時にｘ
＝０．２〜０．９の組成の混合物で導電性を有するのに
十分な窒化ジルコニウムが生成する。例えば、ｘ＝０．
９では窒化ジルコニウムの構成比は約２０重量％である
。しかし、ｘ〉０．９では窒化ジルコニウムの生成量が
十分でなく、十分な導電性を得にくい。(AQN)-(ZrOz) x when expressed as 1-
A mixture having a composition of =0.2 to 0.9 produces enough zirconium nitride to have electrical conductivity. For example, x=0.
In No. 9, the composition ratio of zirconium nitride is about 20% by weight. However, when x>0.9, the amount of zirconium nitride produced is insufficient and it is difficult to obtain sufficient conductivity.
（発明の効果）
以上説明したように１本発明によれば、Ｓｔ、Ｎ４の焼
結したセラミック基板の表面に、 ＡＱＮと有機物質の
混合物の層と、ＡＱＮとＺｒＯ，と有機物質の混合物の
層を交互に複数印刷した後、焼成することにより、絶縁
層の焼成と導電路の形成が同時に行われるため、印刷層
中に空隙を設ける必要がなくなり、量産性が著しく向上
する。また、形成される導電路はセラミックスであり、
導＠略と絶縁層であるＡＩＩＮの焼結が同時に行われる
ため１両者の結合力は堅固なものとなる。従って、セラ
ミックスの導電路を有する耐久性、耐候性が大きく、高
信頼性のセラミック多層基板が得られる。(Effects of the Invention) As explained above, according to the present invention, a layer of a mixture of AQN and an organic substance and a layer of a mixture of AQN, ZrO, and an organic substance are formed on the surface of a sintered ceramic substrate of St and N4. By alternately printing a plurality of layers and then firing them, the insulating layers are fired and the conductive paths are formed at the same time, so there is no need to provide voids in the printed layers, and mass productivity is significantly improved. In addition, the conductive path formed is made of ceramics,
Since the conductive layer and the insulating layer of AIIN are sintered at the same time, the bonding force between the two is strong. Therefore, a highly durable, weather resistant, and highly reliable ceramic multilayer substrate having ceramic conductive paths can be obtained.
第１図は本発明によるセラミック多層基板の断面図、第
２図は本発明によるセラミック多層基板における各層の
印刷パターンを示す平面図、第３図は本発明の一実施例
によるセラミック多層基板の導電路を示す平面図、第４
図は従来の製造方法によるセラミック多層基板の断面図
である。
１．７・・・セラミック基板、 ２・・・第１層。
２ａ−空隙、 ３，６．＋２ａ、１２ｂ、１３ａ。
Ｌ３ｂ・・・導電路、 ４・・・導通路、 ５・・・第
２層、 ８・・・第１ペーストＡ層、 ９・・・第１ペ
ーストＢパターン、 １０・・・第２ペーストＡ層、
１０ａ・・・連結孔、 １１・・・第２ペーストＢパタ
ーン。
第
図
第２因
（ａ）
（ｂ）
特許出願人 松下電器産業株式会社
（Ｃ）FIG. 1 is a cross-sectional view of a ceramic multilayer substrate according to the present invention, FIG. 2 is a plan view showing the printed pattern of each layer in the ceramic multilayer substrate according to the present invention, and FIG. 3 is a conductive ceramic multilayer substrate according to an embodiment of the present invention. Plan view showing the road, No. 4
The figure is a cross-sectional view of a ceramic multilayer substrate manufactured by a conventional manufacturing method. 1.7... Ceramic substrate, 2... First layer. 2a-void, 3,6. +2a, 12b, 13a. L3b... Conductive path, 4... Conductive path, 5... Second layer, 8... First paste A layer, 9... First paste B pattern, 10... Second paste A layer,
10a... Connecting hole, 11... Second paste B pattern. Figure 2 Cause (a) (b) Patent applicant Matsushita Electric Industrial Co., Ltd. (C)
Claims (4)
縁体である物質の層と、焼成時に反応して導電体となる
物質の層を交互に複数印刷した後、焼成することを特徴
とするセラミック多層基板の製造方法。(1) The feature is that multiple layers of an insulating material and layers of a material that reacts during firing to become a conductor are alternately printed on a ceramic substrate made of sintered silicon nitrogen, and then fired. A method for manufacturing a ceramic multilayer substrate.
なる物質が、窒化アルミニウムと有機物質の混合物であ
ることを特徴とする請求項（１）記載のセラミック多層
基板の製造方法。(2) The method for manufacturing a ceramic multilayer substrate according to claim 1, wherein the material serving as an insulator printed on the surface of the ceramic substrate is a mixture of aluminum nitride and an organic material.
ミニウムと酸化ジルコニウムと有機物質の混合物である
ことを特徴とする請求項（１）記載のセラミック多層基
板の製造方法。(3) The method for manufacturing a ceramic multilayer substrate according to claim (1), wherein the substance that reacts to become a conductor during firing is a mixture of aluminum nitride, zirconium oxide, and an organic substance.
の混合物中の窒化アルミニウムと酸化ジルコニウムの混
合比を（ＡｌＮ）＿ｘ（ＺｒＯ＿２）＿１＿−＿ｘで表
わした時、ｘ＝０．２〜０．９であることを特徴とする
請求項（２）記載のセラミック多層基板の製造方法。(4) When the mixing ratio of aluminum nitride and zirconium oxide in the mixture of aluminum nitride, zirconium oxide, and organic substance is expressed as (AlN)_x(ZrO_2)_1_-_x, x = 0.2 to 0.9. The method of manufacturing a ceramic multilayer substrate according to claim 2, characterized in that:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23260388A JPH0282598A (en) | 1988-09-19 | 1988-09-19 | Manufacture of ceramic multilayer board |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23260388A JPH0282598A (en) | 1988-09-19 | 1988-09-19 | Manufacture of ceramic multilayer board |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0282598A true JPH0282598A (en) | 1990-03-23 |
Family
ID=16941942
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23260388A Pending JPH0282598A (en) | 1988-09-19 | 1988-09-19 | Manufacture of ceramic multilayer board |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0282598A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0549270A (en) * | 1990-07-26 | 1993-02-26 | Ngk Insulators Ltd | Piezoelectric/electrostrictive actuator |
| JP2007110140A (en) * | 2006-11-06 | 2007-04-26 | Toshiba Corp | Silicon nitride wiring board and method of manufacturing the same |
-
1988
- 1988-09-19 JP JP23260388A patent/JPH0282598A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0549270A (en) * | 1990-07-26 | 1993-02-26 | Ngk Insulators Ltd | Piezoelectric/electrostrictive actuator |
| JP2007110140A (en) * | 2006-11-06 | 2007-04-26 | Toshiba Corp | Silicon nitride wiring board and method of manufacturing the same |
| JP4516057B2 (en) * | 2006-11-06 | 2010-08-04 | 株式会社東芝 | Silicon nitride wiring board and method for manufacturing the same |
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