JP2931910B2 - Circuit board - Google Patents

Circuit board

Info

Publication number
JP2931910B2
JP2931910B2 JP33915689A JP33915689A JP2931910B2 JP 2931910 B2 JP2931910 B2 JP 2931910B2 JP 33915689 A JP33915689 A JP 33915689A JP 33915689 A JP33915689 A JP 33915689A JP 2931910 B2 JP2931910 B2 JP 2931910B2
Authority
JP
Japan
Prior art keywords
conductor
circuit
wiring conductor
copper
molybdenum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP33915689A
Other languages
Japanese (ja)
Other versions
JPH03196696A (en
Inventor
義博 細井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP33915689A priority Critical patent/JP2931910B2/en
Publication of JPH03196696A publication Critical patent/JPH03196696A/en
Application granted granted Critical
Publication of JP2931910B2 publication Critical patent/JP2931910B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は混成集積回路装置等に使用される回路基板に
関し、より詳細には内部にタングステン(W)、モリブ
デン(Mo)、マンガン(Mn)等の高融点金属から成る配
線導体を、外表面に銅(Cu)から成る回路導体を有する
回路基板の改良に関するものである。
Description: TECHNICAL FIELD The present invention relates to a circuit board used for a hybrid integrated circuit device or the like, and more particularly, to tungsten (W), molybdenum (Mo), manganese (Mn) inside. The present invention relates to an improvement of a circuit board having a wiring conductor made of a metal having a high melting point and a circuit conductor made of copper (Cu) on an outer surface.

(従来技術及びその課題) 従来、半導体素子等の能動部品や抵抗器、コンデンサ
等の受動部品を多数搭載し、所定の電子回路を構成する
ようになした混成集積回路装置は、通常、内部にタング
ステン(W)、モリブデン(Mo)、マンガン(Mn)等の
高融点金属から成る配線導体を埋設した絶縁基体の外表
面に銅(Cu)から成る回路導体をその一部が前記配線導
体と接触するようにして被着させた構造の回路基板を準
備し、該回路基板の表面に半導体素子やコンデンサ、抵
抗器等を搭載取着するとともに該半導体素子等の電極を
前記回路導体に接続することによって混成集積回路装置
となる。
(Prior art and its problems) Conventionally, a hybrid integrated circuit device in which a large number of active components such as semiconductor elements and passive components such as resistors and capacitors are mounted to constitute a predetermined electronic circuit is usually provided internally. A circuit conductor made of copper (Cu) contacts a part of the circuit conductor made of copper (Cu) on an outer surface of an insulating base in which a wiring conductor made of a refractory metal such as tungsten (W), molybdenum (Mo), and manganese (Mn) is embedded. Prepare a circuit board having a structure attached in such a manner that a semiconductor element, a capacitor, a resistor, and the like are mounted on the surface of the circuit board, and electrodes of the semiconductor element and the like are connected to the circuit conductor. This results in a hybrid integrated circuit device.

かかる従来の混成集積回路装置等に使用される回路基
板は一般にセラミックスの積層技術及びスクリーン印刷
等の厚膜技術を採用することによって製作されており、
具体的には以下の方法によって製作される。
Circuit boards used in such conventional hybrid integrated circuit devices and the like are generally manufactured by employing a ceramic lamination technology and a thick film technology such as screen printing,
Specifically, it is manufactured by the following method.

即ち、 まず、アルミナ(Al2O3)等の電気絶縁性に優れたセ
ラミックス原料粉末に有機溶剤、溶媒を添加混合して複
数枚のセラミック生シートを得るとともに該各セラミッ
ク生シートの上下面にタングステン(W)、モリブデン
(Mo)、マンガン(Mn)等の高融点金属粉末から成る導
電ペーストを従来周知のスクリーン印刷等の厚膜手法を
採用することによって所定パターンに印刷塗布する。
First, an organic solvent and a solvent are added to a ceramic raw material powder such as alumina (Al 2 O 3 ) having excellent electrical insulation to obtain a plurality of raw ceramic sheets, and a plurality of raw ceramic sheets are obtained. A conductive paste made of a refractory metal powder such as tungsten (W), molybdenum (Mo), manganese (Mn) or the like is printed and applied in a predetermined pattern by employing a conventionally known thick film technique such as screen printing.

次ぎに前記各セラミック生シートを積層し、積層体を
得るとともにこれを約1500℃の温度で焼成し、内部及び
表面にタングステン(W)、モリブデン(Mo)、マンガ
ン(Mn)等の高融点金属から成る配線導体を有する絶縁
基体を得る。
Next, the above ceramic green sheets are laminated to obtain a laminate, which is fired at a temperature of about 1500 ° C., and a high melting point metal such as tungsten (W), molybdenum (Mo), manganese (Mn) is formed inside and on the surface. An insulating substrate having a wiring conductor made of

そして最後に前記絶縁基体の外表面に、銅(Cu)粉末
にガラス粉末及び有機溶剤、溶媒を添加混合して得た銅
ペーストを従来周知のスクリーン印刷法によりその一部
が前記配線導体と接触するようにして塗布させるととも
に、これを中性雰囲気(窒素雰囲気)中、約800℃の温
度で焼成し、銅(Cu)粉末を絶縁基体及び配線導体上に
被着させ、これによって回路基板となる。
Finally, a copper paste obtained by adding and mixing a glass powder, an organic solvent, and a solvent to copper (Cu) powder on the outer surface of the insulating base is partially contacted with the wiring conductor by a conventionally well-known screen printing method. This is fired at a temperature of about 800 ° C. in a neutral atmosphere (nitrogen atmosphere), and copper (Cu) powder is deposited on the insulating base and the wiring conductor, thereby forming a circuit board and Become.

しかし乍ら、この従来の回路基板は配線導体を形成す
るタングステン(W)、モリブテン(Mo)等と回路導体
を形成する銅(Cu)との濡れ性(反応性)が悪いことか
ら配線導体の一部に回路導体を被着させたとしても両者
の密着性は悪く、その結果、配線導体と回路導体との間
の電気的導通が極めて悪いという欠点を有していた。
However, this conventional circuit board has poor wettability (reactivity) between tungsten (W), molybdenum (Mo), etc., which forms the wiring conductor, and copper (Cu), which forms the circuit conductor. Even if a circuit conductor is partially adhered, the adhesion between them is poor, and as a result, there is a disadvantage that the electrical conduction between the wiring conductor and the circuit conductor is extremely poor.

そこで上記欠点に鑑み、配線導体の外表面で回路導体
が接触する部位にタングステン(W)、モリブデン(M
o)及び銅(Cu)と濡れ性(反応性)の良いニッケルや
コバルト等から成る被覆層を被着させ、配線導体と回路
導体との密着性を向上させることが提案されている(特
開昭58−30194号参照)。
Therefore, in view of the above-mentioned drawbacks, tungsten (W), molybdenum (M)
o) and a coating layer made of nickel, cobalt or the like having good wettability (reactivity) with copper (Cu) is applied to improve the adhesion between the wiring conductor and the circuit conductor. See No. 58-30194).

しかし乍ら、この場合、銅(Cu)ペーストを約800℃
の温度で焼成し、回路導体を配線導体上に被覆層を間に
挟んで被着させる際、回路導体を形成する銅(Cu)と被
覆層を形成するニッケル(Ni)、コバルト(Co)等との
間に相互拡散が起こり、回路導体の銅(Cu)の一部が濡
れ性(反応性)の悪いタングステン(W)、モリブデン
(Mo)等から成る配線導体に直接接触して配線導体と回
路導体との密着性が劣化し、同時に両者間の電気的導通
が被着直後は良好なものの温度サイクル等のストレスが
印加されると配線導体と回路導体の熱膨張係数の差に起
因して大きく低下してしまうという欠点を有していた。
However, in this case, the copper (Cu) paste is heated to about 800 ° C.
When the circuit conductor is baked at the above temperature and the circuit conductor is applied on the wiring conductor with the coating layer interposed, copper (Cu) forming the circuit conductor and nickel (Ni), cobalt (Co), etc. forming the coating layer Inter-diffusion occurs between the wiring conductor and some of the copper (Cu) in the circuit conductor directly contacts the wiring conductor made of tungsten (W) or molybdenum (Mo) with poor wettability (reactivity), and Adhesion with the circuit conductor deteriorates, and at the same time, electrical conduction between the two is good immediately after deposition, but when stress such as temperature cycling is applied due to the difference in thermal expansion coefficient between the wiring conductor and the circuit conductor There was a disadvantage that it was greatly reduced.

(発明の目的) 本発明は上記欠点に鑑み案出されたもので、その目的
はタングステン(W)、モリブデン(Mo)、マンガン
(Mn)の少なくとも1種から成る配線導体と銅(Cu)か
ら成る回路導体との密着性を大幅に向上させるとともに
両者間の電気的導通を良好なものとして混成集積回路装
置等に好適に使用し得る回路基板を提供することにあ
る。
(Object of the Invention) The present invention has been devised in view of the above-mentioned drawbacks, and its object is to provide a wiring conductor made of at least one of tungsten (W), molybdenum (Mo), and manganese (Mn) and copper (Cu). It is an object of the present invention to provide a circuit board which can be used for a hybrid integrated circuit device or the like by significantly improving the adhesion to the circuit conductor and improving the electrical conduction between the two.

(課題を解決するための手段) 本発明はタングステン、モリブデン、マンガンの少な
くとも1種から成る配線導体を設けた絶縁基体の外表面
に、銅から成る回路導体をその一部が前記配線導体と接
触するようにして被着させた回路基板において、前記配
線導体と回路導体との接触部にニッケル、コバルトの少
なくとも1種とタングステン、モリブデンの少なくとも
1種との合金を主成分とする中間金属層を介在させたこ
とを特徴とするものである。
(Means for Solving the Problems) According to the present invention, a circuit conductor made of copper is formed on an outer surface of an insulating substrate provided with a wiring conductor made of at least one of tungsten, molybdenum, and manganese, and a part of the circuit conductor makes contact with the wiring conductor. In the circuit board thus adhered, an intermediate metal layer mainly composed of an alloy of at least one of nickel and cobalt and at least one of tungsten and molybdenum is provided at a contact portion between the wiring conductor and the circuit conductor. It is characterized by being interposed.

(実施例) 次に本発明を添付図面に基づき詳細に説明する。(Example) Next, the present invention will be described in detail with reference to the accompanying drawings.

第1図は本発明の回路基板を説明するための一部拡大
断面図であり、1は電気絶縁性の材料から成る絶縁基体
である。
FIG. 1 is a partially enlarged sectional view for explaining a circuit board of the present invention, and 1 is an insulating base made of an electrically insulating material.

前記絶縁基体1は、例えばアルミナセラミックス等の
電気絶縁材料から成り、アルミナ(Al2O3)、シリカ(S
iO2)、マグネシウム(MgO)、カルシア(CaO)等のセ
ラミック原料粉末に有機溶剤、溶媒を添加混合して泥漿
状となすとともにこれをドクターブレード法を採用する
ことによってセラミック生シートを形成し、しかる後、
前記セラミック生シートに適当な穴あけ加工を施すとと
もに複数枚積層し、還元雰囲気中、約1500℃の温度で焼
成することによって製作される。
The insulating base 1 is made of an electrically insulating material such as alumina ceramics, for example, alumina (Al 2 O 3 ), silica (S
iO 2 ), magnesium (MgO), calcia (CaO) and other ceramic raw material powders are mixed with an organic solvent and a solvent to form a slurry, which is then formed into a ceramic raw sheet by employing a doctor blade method. After a while
The ceramic green sheet is manufactured by subjecting the ceramic green sheet to appropriate perforation processing, laminating a plurality of sheets, and firing at a temperature of about 1500 ° C. in a reducing atmosphere.

また前記絶縁基体1にはその内部から上面に導出する
配線導体2が設けてあり、該配線導体2はタングステン
(W)、モリブデン(Mo)、マンガン(Mn)の少なくと
も1種より形成される。
The insulating base 1 is provided with a wiring conductor 2 extending from the inside to the upper surface, and the wiring conductor 2 is formed of at least one of tungsten (W), molybdenum (Mo), and manganese (Mn).

前記配線導体2はタングステン(W)、モリブデン
(Mo)、マンガン(Mn)の粉末に有機溶剤、溶媒を添加
混合して導体ペーストを作り、該導体ペーストを前記セ
ラミック生シートの上下面にスクリーン印刷等の厚膜手
法を採用し、所定のパターンに印刷塗布させておくこと
によって絶縁基体1の内部及び表面に被着形成される。
The wiring conductor 2 is made by adding and mixing an organic solvent and a solvent to a powder of tungsten (W), molybdenum (Mo), and manganese (Mn) to form a conductor paste, and the conductor paste is screen-printed on the upper and lower surfaces of the ceramic raw sheet. By applying a thick film technique such as that described above and printing and applying a predetermined pattern, the insulating substrate 1 is adhered and formed inside and on the surface.

前記配線基体2はその露出外表面で後述する回路導体
4が被着される部位にニッケル(Ni)、コバルト(Co)
の少なくとも1種とタングステン(W)、モリブデン
(Mo)の少なくとも1種との合金を主成分とする金属か
ら成る中間金属層3が被着形成されており、該中間金属
層3は配線導体2の露出外表面に電解メッキ法、無電解
メッキ法等により被着形成される。
The wiring substrate 2 has nickel (Ni), cobalt (Co)
And an intermediate metal layer 3 made of a metal whose main component is an alloy of at least one element selected from the group consisting of tungsten (W) and molybdenum (Mo). Is formed on the exposed outer surface by electroplating, electroless plating, or the like.

前記中間金属層3はこれを構成するニッケル(Ni)、
コバルト(Co)の少なくとも1種とタングステン
(W)、モリブデン(Mo)の少なくとも1種との合金を
主成分とする金属が配線導体2と回路導体4の両方に濡
れ性(反応性)が良く、配線導体2上に回路導体4を被
着させた場合、両者は完全に密着して両者間の電気的導
通を極めて優れたものとなす。
The intermediate metal layer 3 is composed of nickel (Ni),
A metal mainly composed of an alloy of at least one of cobalt (Co) and at least one of tungsten (W) and molybdenum (Mo) has good wettability (reactivity) to both the wiring conductor 2 and the circuit conductor 4. When the circuit conductor 4 is applied on the wiring conductor 2, the two are completely adhered to each other, and the electrical conduction between the two is extremely excellent.

また前記中間金属層3を構成する金属は銅(Cu)と相
互拡散し難い金属であり、そのため配線導体2上に中間
金属層3を間に挟んで回路導体4を被着させたとしても
回路導体4の銅(Cu)の一部が配線導体2に直接接触す
ることは一切なく、これによっても配線導体2と回路導
体4との密着性をより完全なものとし、両者の電気的導
通を極めて良いものとなすこともできる。
Further, the metal constituting the intermediate metal layer 3 is a metal which is hardly interdiffused with copper (Cu). Therefore, even if the circuit conductor 4 is attached to the wiring conductor 2 with the intermediate metal layer 3 interposed therebetween, the circuit Part of the copper (Cu) of the conductor 4 does not directly contact the wiring conductor 2 at all, and this also makes the adhesion between the wiring conductor 2 and the circuit conductor 4 more complete, and establishes electrical continuity between the two. It can be very good.

尚、前記中間金属層3はタングステン(W)、モリブ
デン(Mo)の合計重量がニッケル(Ni)、コバルト(C
o)の合計重量100に対し2.0%未満となると銅(Cu)の
拡散の抑止効果が弱まり、回路導体を構成する銅(Cu)
の一部が中間金属層3内を拡散して配線導体2に直接接
触し、配線導体2と回路導体4との密着性を劣化させる
傾向にあり、またタングステン(W)、モリブデン(M
o)の合計重量がニッケル(Ni)、コバルト(Co)の合
計重量100に対し50.0%を越えると中間金属層3と回路
導体4との濡れ性(反応性)が悪くなり回路導体4を配
線導体2に密着性良く被着させることができなくなる傾
向にあることから中間金属層3はタングステン(W)、
モリブデン(Mo)の合計重量をニッケル(Ni)、コバル
ト(Co)の合計重量100に対し2.0乃至50.0%の範囲とし
ておくことが望ましい。
The intermediate metal layer 3 has a total weight of tungsten (W) and molybdenum (Mo) of nickel (Ni) and cobalt (C).
If the total weight of o) is less than 2.0% of the total weight of 100, the effect of suppressing the diffusion of copper (Cu) is weakened, and the copper (Cu) constituting the circuit conductor is reduced.
Of the metal conductor 3 diffuses in the intermediate metal layer 3 and directly contacts the wiring conductor 2, which tends to deteriorate the adhesion between the wiring conductor 2 and the circuit conductor 4. In addition, tungsten (W), molybdenum (M
If the total weight of o) exceeds 50.0% with respect to the total weight of nickel (Ni) and cobalt (Co), 100, the wettability (reactivity) between the intermediate metal layer 3 and the circuit conductor 4 deteriorates, and the circuit conductor 4 is wired. The intermediate metal layer 3 is made of tungsten (W),
It is desirable that the total weight of molybdenum (Mo) be in the range of 2.0 to 50.0% based on the total weight of nickel (Ni) and cobalt (Co) of 100.

また前記中間金属層3はその厚みが0.1μm未満であ
ると回路導体を形成する銅(Cu)の拡散を完全に防止す
ることができず、回路導体4の一部が中間金属層を拡散
し、配線導体2に直接接触して配線導体2と回路導体4
の密着性が劣化する傾向にあり、また10.0μmを超える
と中間金属層3に内部応力によるクラックが発生し、回
路導体4の一部が中間金属層3のクラックを介して配線
導体2に直接接触し、配線導体2と回路導体4との密着
性が劣化する傾向にあることから中間金属層3の厚みは
0.1乃至10.0μmの範囲としておくことが好ましい。
If the thickness of the intermediate metal layer 3 is less than 0.1 μm, diffusion of copper (Cu) forming a circuit conductor cannot be completely prevented, and a part of the circuit conductor 4 diffuses through the intermediate metal layer. And the wiring conductor 2 and the circuit conductor 4 in direct contact with the wiring conductor 2.
When the thickness exceeds 10.0 μm, a crack occurs in the intermediate metal layer 3 due to internal stress, and a part of the circuit conductor 4 is directly connected to the wiring conductor 2 through the crack in the intermediate metal layer 3. Contact, and the adhesiveness between the wiring conductor 2 and the circuit conductor 4 tends to deteriorate.
It is preferable that the thickness be in the range of 0.1 to 10.0 μm.

前記配線導体2の外表面に被着させた中間金属層3上
には更に銅(Cu)から成る回路導体4が被着されてお
り、該回路導体4には半導体素子等の能動部品や抵抗
器、コンデンサ等の受動部品が接続される。
A circuit conductor 4 made of copper (Cu) is further adhered on the intermediate metal layer 3 adhered to the outer surface of the wiring conductor 2, and the circuit conductor 4 has an active component such as a semiconductor element or a resistor. Passive components such as capacitors and capacitors are connected.

前記回路導体4は銅(Cu)の粉末にガラス粉末及び有
機溶剤、溶媒を添加混合して銅ペーストを作り、該銅ペ
ーストをその一部が配線導体2に被着させた中間金属層
3と接触するようにして絶縁基体1の外表面に印刷塗布
し、しかる後、これを中性雰囲気中、約800℃の温度で
焼成することによって絶縁基体1の外表面に被着され
る。
The circuit conductor 4 is formed by adding and mixing a glass powder, an organic solvent, and a solvent to copper (Cu) powder to form a copper paste, and applying the copper paste to the intermediate metal layer 3 partially adhered to the wiring conductor 2. Printing is performed on the outer surface of the insulating substrate 1 so as to be in contact with the substrate, and thereafter, the resultant is baked at a temperature of about 800 ° C. in a neutral atmosphere to be applied to the outer surface of the insulating substrate 1.

尚、この場合、配線導体2の外表面には回路導体4が
拡散し難く、回路導体4と濡れ性(反応性)の良い金属
から成る中間金属層3が配されていることから配線導体
2に回路導体4を密着性良く、且つ両者の電気的導通を
良好として被着させることが可能となる。
In this case, since the circuit conductor 4 is hardly diffused on the outer surface of the wiring conductor 2 and the intermediate metal layer 3 made of a metal having good wettability (reactivity) with the circuit conductor 4 is provided, the wiring conductor 2 The circuit conductor 4 can be adhered with good adhesion and good electrical continuity between the two.

かくしてこの回路基板はその表面に半導体素子や抵抗
器、コンデンサ等が搭載取着され該半導体素子等の各電
極が回路導体に接続されることによって構成集積回路装
置となる。
In this way, the circuit board becomes a constituent integrated circuit device by mounting semiconductor elements, resistors, capacitors and the like on its surface and connecting each electrode of the semiconductor elements and the like to circuit conductors.

(実施例) 次に本発明の作用効果を以下に述べる実施例に基づき
説明する。
(Example) Next, the operation and effect of the present invention will be described based on examples described below.

まず、アルミナ(Al2O3)を主成分とするセラミック
生シートの上面にタングステン(W)、モリブデン(M
o)の粉末から成る導体ペーストを印刷塗布し、幅1.0m
m、長さ10.0mmのパターンを一対、その先端の間隔を5.0
mmとして20対被着させ、しかる後、これを還元雰囲気
中、1500℃の温度で焼成し、アルミナ質焼結体からなる
絶縁基体に第1表に示す材質からなる配線導体を形成す
る。
First, tungsten (W) and molybdenum (M) are placed on the upper surface of a green ceramic sheet mainly composed of alumina (Al 2 O 3 ).
o) Conductive paste consisting of powder of the above is printed and applied, and the width is 1.0m.
m, a pair of patterns with a length of 10.0 mm, the distance between the tips is 5.0
Then, this is fired at a temperature of 1500 ° C. in a reducing atmosphere to form a wiring conductor made of the material shown in Table 1 on an insulating base made of an alumina sintered body.

次に前記配線導体の表面に第1表に示す組成、厚みの
中間金属層を電解メッキ法もしくは無電解メッキ法によ
り被着させる。
Next, an intermediate metal layer having the composition and thickness shown in Table 1 is applied to the surface of the wiring conductor by electrolytic plating or electroless plating.

そして次ぎに前記一対の配線導体間に銅(Cu)ペース
トを厚み約30μmに印刷するとともに、これを中性雰囲
気中、800℃の温度で焼成し回路導体を形成する。
Then, a copper (Cu) paste is printed to a thickness of about 30 μm between the pair of wiring conductors and fired at a temperature of 800 ° C. in a neutral atmosphere to form circuit conductors.

尚、銅(Cu)ペーストの配線導体への接触は配線導体
の先端1.0mmに銅(Cu)ペーストが接触するようにし
た。
The copper (Cu) paste was brought into contact with the wiring conductor such that the copper (Cu) paste was in contact with the tip 1.0 mm of the wiring conductor.

そして最後に前記一対の配線導体間の初期電気抵抗値
及び−65〜+150℃の温度サイクルテストを100サイクル
実施した後の電気抵抗値を測定し、その変化率(増加
率)を求めるとともに平均値を算出し、平均増加率の大
きさを配線導体と回路導体の電気的導通の評価とした。
Finally, the initial electric resistance between the pair of wiring conductors and the electric resistance after 100 cycles of a temperature cycle test at −65 to + 150 ° C. are measured, the rate of change (rate of increase) is determined, and the average value is obtained. Was calculated, and the magnitude of the average increase rate was used as the evaluation of the electrical continuity between the wiring conductor and the circuit conductor.

尚、試料番号24及び25は本発明品ひ比較するための比
較試料であり、配線導体の表面にニッケル(Ni)もしく
はコバルト(Co)の層を被着させたものである。
Sample numbers 24 and 25 are comparative samples for comparison with the products of the present invention, in which a layer of nickel (Ni) or cobalt (Co) is applied to the surface of the wiring conductor.

上記の結果を第1表に示す。 The results are shown in Table 1.

上記実験結果から判るように従来の配線導体の表面に
ニッケル(Ni)もしくはコバルト(Co)の層を被着させ
たものは電気抵抗の増加率が81.0%以上と大きく、回路
導体を被着させる際、回路導体を構成する銅(Cu)と配
線導体の表面に被着させたニッケル(Ni)もしくはコバ
ルト(Co)との間に相互拡散が起こり、配線導体と回路
導体との間の密着性が劣化するとともに両者間の電気的
導通が悪いものに成っているのに対し、本発明の配線導
体と回路導体の間にニッケル(Ni)、コバルト(Co)の
少なくとも1種とタングステン(W)、モリブデン(M
o)の少なくとも1種との合金を主成分とする金属を介
在させたものは電気抵抗の増加率が31.6%以下と小さ
く、配線導体と回路導体とが密着し、且つ両者の電気的
導体が極めて優れたものとなっていることが判る。
As can be seen from the above experimental results, the conventional wiring conductor with a nickel (Ni) or cobalt (Co) layer deposited on the surface has a large increase in electrical resistance of 81.0% or more, and the circuit conductor is deposited. At the time, interdiffusion occurs between copper (Cu) constituting the circuit conductor and nickel (Ni) or cobalt (Co) deposited on the surface of the wiring conductor, resulting in adhesion between the wiring conductor and the circuit conductor. Is deteriorated and the electrical conduction between the two is poor. On the other hand, at least one of nickel (Ni) and cobalt (Co) and tungsten (W) are interposed between the wiring conductor and the circuit conductor of the present invention. , Molybdenum (M
o) In the case where a metal mainly composed of at least one alloy is interposed, the increase rate of the electric resistance is as small as 31.6% or less, the wiring conductor and the circuit conductor are in close contact, and both electric conductors are It turns out that it has become very excellent.

(発明の効果) 本発明の回路基板によれば、配線導体と回路導体との
間にニッケル(Ni)、コバルト(Co)の少なくとも1種
とタングステン(W)、モリブデン(Mo)の少なくとも
1種との合金を主成分とする金属が介在されていること
から配線導体と回路導体とを両者間の電気的導通を良好
として密着性良く被着させることができ、構成集積回路
装置等に使用される回路基板として極めて有用である。
(Effect of the Invention) According to the circuit board of the present invention, at least one of nickel (Ni) and cobalt (Co) and at least one of tungsten (W) and molybdenum (Mo) are provided between the wiring conductor and the circuit conductor. Since a metal having an alloy as a main component is interposed, the wiring conductor and the circuit conductor can be adhered with good electrical continuity and good adhesion therebetween. It is extremely useful as a circuit board.

【図面の簡単な説明】[Brief description of the drawings]

第1図は本発明の回路基板を説明するための一部拡大断
面図である。 1……絶縁基体、2……配線導体 3……中間金属層、4……回路導体
FIG. 1 is a partially enlarged sectional view for explaining a circuit board of the present invention. DESCRIPTION OF SYMBOLS 1 ... Insulating base, 2 ... Wiring conductor 3 ... Intermediate metal layer, 4 ... Circuit conductor

Claims (3)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】タングステン、モリブデン、マンガンの少
なくとも1種から成る配線導体を設けた絶縁基体上に、
銅ペーストを塗布するとともに焼成することによって前
記絶縁基体の外表面に前記配線導体とは異なるパターン
に形成され、一部が前記配線導体と接触する銅から成る
回路導体とから成り、前記配線導体と回路導体との接触
部間にニッケル、コバルトの少なくとも1種とタングス
テン、モリブデンの少なくとも1種との合金を主成分と
する中間金属層を介在させたことを特徴とする回路基
板。
1. An insulating substrate provided with a wiring conductor made of at least one of tungsten, molybdenum, and manganese,
The wiring conductor is formed in a different pattern from the wiring conductor on the outer surface of the insulating base by applying and baking a copper paste, and a part of the circuit conductor is made of copper in contact with the wiring conductor. A circuit board comprising an intermediate metal layer mainly containing an alloy of at least one of nickel and cobalt and at least one of tungsten and molybdenum between contact portions with a circuit conductor.
【請求項2】前記中間金属層はタングステン、モリブデ
ンの少なくとも1種の重量がニッケル、コバルトの少な
くとも1種の重量100に対し2.0乃至50.0%であることを
特徴とする特許請求の範囲第1項記載の回路基板。
2. The intermediate metal layer according to claim 1, wherein the weight of at least one of tungsten and molybdenum is 2.0 to 50.0% with respect to the weight of at least one of nickel and cobalt. The described circuit board.
【請求項3】前記中間金属層の厚みが0.1乃至10.0μm
であることを特徴とする特許請求の範囲第1項記載の回
路基板。
3. The intermediate metal layer has a thickness of 0.1 to 10.0 μm.
2. The circuit board according to claim 1, wherein:
JP33915689A 1989-12-26 1989-12-26 Circuit board Expired - Lifetime JP2931910B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP33915689A JP2931910B2 (en) 1989-12-26 1989-12-26 Circuit board

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP33915689A JP2931910B2 (en) 1989-12-26 1989-12-26 Circuit board

Publications (2)

Publication Number Publication Date
JPH03196696A JPH03196696A (en) 1991-08-28
JP2931910B2 true JP2931910B2 (en) 1999-08-09

Family

ID=18324770

Family Applications (1)

Application Number Title Priority Date Filing Date
JP33915689A Expired - Lifetime JP2931910B2 (en) 1989-12-26 1989-12-26 Circuit board

Country Status (1)

Country Link
JP (1) JP2931910B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3286651B2 (en) * 1993-12-27 2002-05-27 株式会社住友金属エレクトロデバイス Ceramic multilayer wiring board, method of manufacturing the same, and conductive material for ceramic multilayer wiring board

Also Published As

Publication number Publication date
JPH03196696A (en) 1991-08-28

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