JPH027884Y2 - - Google Patents
Info
- Publication number
- JPH027884Y2 JPH027884Y2 JP18228983U JP18228983U JPH027884Y2 JP H027884 Y2 JPH027884 Y2 JP H027884Y2 JP 18228983 U JP18228983 U JP 18228983U JP 18228983 U JP18228983 U JP 18228983U JP H027884 Y2 JPH027884 Y2 JP H027884Y2
- Authority
- JP
- Japan
- Prior art keywords
- metal holder
- slider
- holder
- stopper
- hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000002184 metal Substances 0.000 claims description 69
- 239000000758 substrate Substances 0.000 claims description 25
- 239000007791 liquid phase Substances 0.000 claims description 9
- 238000004943 liquid phase epitaxy Methods 0.000 claims 1
- 239000000243 solution Substances 0.000 description 28
- 239000013078 crystal Substances 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 230000004308 accommodation Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000012047 saturated solution Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18228983U JPS6089281U (ja) | 1983-11-26 | 1983-11-26 | 液相エピタキシヤル成長装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18228983U JPS6089281U (ja) | 1983-11-26 | 1983-11-26 | 液相エピタキシヤル成長装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6089281U JPS6089281U (ja) | 1985-06-19 |
| JPH027884Y2 true JPH027884Y2 (cs) | 1990-02-26 |
Family
ID=30394807
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18228983U Granted JPS6089281U (ja) | 1983-11-26 | 1983-11-26 | 液相エピタキシヤル成長装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6089281U (cs) |
-
1983
- 1983-11-26 JP JP18228983U patent/JPS6089281U/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6089281U (ja) | 1985-06-19 |
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