JPH027578A - Manufacture of thin-film type photoelectric converting element - Google Patents
Manufacture of thin-film type photoelectric converting elementInfo
- Publication number
- JPH027578A JPH027578A JP63158462A JP15846288A JPH027578A JP H027578 A JPH027578 A JP H027578A JP 63158462 A JP63158462 A JP 63158462A JP 15846288 A JP15846288 A JP 15846288A JP H027578 A JPH027578 A JP H027578A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- lower metal
- photoelectric conversion
- metal electrode
- transparent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 239000010409 thin film Substances 0.000 title claims description 9
- 229910052751 metal Inorganic materials 0.000 claims abstract description 19
- 239000002184 metal Substances 0.000 claims abstract description 19
- 238000006243 chemical reaction Methods 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims abstract description 13
- 230000001681 protective effect Effects 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 239000010408 film Substances 0.000 claims description 13
- 238000000206 photolithography Methods 0.000 claims description 8
- 238000005530 etching Methods 0.000 abstract description 7
- 238000005260 corrosion Methods 0.000 abstract description 4
- 230000007797 corrosion Effects 0.000 abstract description 4
- 238000009413 insulation Methods 0.000 abstract 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- PAWQVTBBRAZDMG-UHFFFAOYSA-N 2-(3-bromo-2-fluorophenyl)acetic acid Chemical compound OC(=O)CC1=CC=CC(Br)=C1F PAWQVTBBRAZDMG-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000003487 electrochemical reaction Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Landscapes
- Light Receiving Elements (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、薄膜型光電変換素子の製造方法に関するもの
である。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a method for manufacturing a thin film photoelectric conversion element.
［従来の技術］
最近、アモルファスシリコン等を用いた集積型光電変換
素子が、電力用以外にフォトダイオードアレイ等の電子
部品分野でも用いられようとしている。また、薄膜型で
あることを応用して、パワーＭＯ３）ランリスタの上に
形成し、発光ダイオード（ＬＥＤ）と対向実装すること
により、トランジスタ駆動用電源として利用することも
試みられている。[Prior Art] Recently, integrated photoelectric conversion elements using amorphous silicon or the like are being used not only for electric power but also in the field of electronic components such as photodiode arrays. Furthermore, by taking advantage of the thin film type, attempts have been made to form it on a power MO3) run lister and to use it as a power source for driving a transistor by mounting it opposite to a light emitting diode (LED).
フォトダイオードアレイ等の素子を製造するには、微小
なサイズに加工する必要があるため、−般にフォトリソ
グラフィを用いて加工される。第３図はその一般的な製
造方法を示すもので、下部金属電極１、光電変換層２、
透明電極３、透明保護膜４、ボンディング用ＡＩ！電極
５を順次フォトリソグラフィを用いて形成する。In order to manufacture elements such as photodiode arrays, it is necessary to process them into minute sizes, so photolithography is generally used. Figure 3 shows the general manufacturing method, in which the lower metal electrode 1, the photoelectric conversion layer 2,
Transparent electrode 3, transparent protective film 4, AI for bonding! Electrodes 5 are sequentially formed using photolithography.
［発明が解決しようとする課題］
ところで、早産性やコストを考慮すると、上記フォトリ
ソグラフィで行われるエツチング方法としては、湿式エ
ツチングの方が有利である。ところが、ボンディング用
ＡＰ電極５を湿式エッチングしたとき、光電変換層２の
上の透明電極３が腐食するという問題がしばしば生じる
。特に集積型にした場合この傾向が著しい。これは、透
明保護膜４のピンホールを通して電気化学反応が起こる
ものと考えられる。[Problems to be Solved by the Invention] By the way, considering premature production and cost, wet etching is more advantageous as an etching method performed in the photolithography. However, when the bonding AP electrode 5 is wet-etched, a problem often arises in that the transparent electrode 3 on the photoelectric conversion layer 2 corrodes. This tendency is particularly noticeable when integrated type devices are used. This is considered to be because an electrochemical reaction occurs through the pinholes in the transparent protective film 4.
本発明は、上記問題点を解決するためになされたもので
、その目的とするところは、腐食が起こらず、信頼性の
高い薄膜型光電変換素子の製造方法を提供するにある。The present invention has been made to solve the above-mentioned problems, and its purpose is to provide a method for manufacturing a highly reliable thin film type photoelectric conversion element that does not cause corrosion.
［課題を解決するための手段］
本発明に係る製造方法を第１図に基づいて説明する。ま
ず、絶縁基板Ｓ上にＡ１電極５を形成する（同図（ａ）
参照）。次に、下部金属電極１を前記／ｌ電極５を完全
に覆うように形成しく同図（ｂ）参照）、シかる後、光
電変換層２、透明電極３、透明保護膜４を順次形成する
（同図［Ｃ）〜（ｅｌ参照）。[Means for Solving the Problems] A manufacturing method according to the present invention will be explained based on FIG. 1. First, the A1 electrode 5 is formed on the insulating substrate S (see FIG.
reference). Next, the lower metal electrode 1 is formed so as to completely cover the /l electrode 5 (see figure (b)), and after that, the photoelectric conversion layer 2, the transparent electrode 3, and the transparent protective film 4 are sequentially formed. (See [C) to (el) in the same figure.
最後にＡｌｔ電極５上の下部金属電極１を、それらの接
続部を残すようにして中央部付近だけをエツチング除去
する（同図（ｆ）参照）、これによって、ＡＩ電極５が
表面に露出してワイヤーボンディングが可能となる。Finally, the lower metal electrode 1 on the Alt electrode 5 is etched away only near the center, leaving the connecting part (see figure (f)). As a result, the AI electrode 5 is exposed on the surface. Wire bonding becomes possible.
［作 用］
上記の工程によると、Ａｌのエツチング工程を最初に行
なうので、下地に及ぼす影響を考える必要がない、つま
り、従来例の如き腐食の生じるおそれのない安定した工
程を実現できる。[Function] According to the above process, since the Al etching process is carried out first, there is no need to consider the effect on the underlying layer, that is, a stable process without the fear of corrosion as in the conventional example can be realized.
［実施例］
下部金属電極１としてＣｒ、光電変換層２としてアモル
ファスＳ ｉ ％ Ｊ明電極３としてインジウム・スズ
酸化物及び透明保護膜４としてＳｉＯ２股を用いて集積
型太陽電池を試作した。サイズは０．６１１１ｍ口のセ
ルを１０（Ｉｌｉｌ直列に接続したものである。[Example] An integrated solar cell was prototyped using Cr as the lower metal electrode 1, amorphous Si% J as the photoelectric conversion layer 2, indium tin oxide as the bright electrode 3, and SiO 2 as the transparent protective film 4. The size is 10 cells (0.6111 m) connected in series.
まず最初に、真空蒸着によりＡｌ膜を５０００人形成し
、これをフォトリソグラフィ・エツチングにより加工し
てボンディング用Ａ１電極５とする。First, 5,000 Al films are formed by vacuum evaporation, and processed by photolithography and etching to form the A1 electrode 5 for bonding.
エッチャントとしてりん酸系エツチング液を用いた０次
に、スパッタリング法によりＣｒｌ１３を２０００人形
成して、フォトリソグラフィにより下部金属電極１とす
る。エッチャントとして酢酸・硝酸アンモニウム系を用
いた。続いてプラズマＣＶＤによりアモルファスＳｉ膜
をｐ、ｉ、ｎの順に約６０００人、ＥＢ蒸着によりイン
ジウム・スズを９００人、プラズマＣＶＤによりＳ ｉ
０２膜を５０００人形成し、それぞれフォトリソグラ
フィ・エツチングにより所定の形状に加工する。最後に
Ｃｒ電極の中央部をフォトリソグラフィ・エツチングに
よって除去してＡ１電極を露出させる。Next, 2,000 layers of Crl 13 are formed by sputtering using a phosphoric acid-based etching solution as an etchant, and a lower metal electrode 1 is formed by photolithography. Acetic acid/ammonium nitrate was used as the etchant. Subsequently, an amorphous Si film was formed by plasma CVD in the order of p, i, and n in an amount of approximately 6,000 layers, indium tin was formed by EB evaporation in an amount of 900 layers, and Si
02 films were formed by 5,000 people, and each film was processed into a predetermined shape by photolithography and etching. Finally, the central portion of the Cr electrode is removed by photolithography and etching to expose the A1 electrode.
このようにして得られた集積型太陽電池の概略図を第２
図に示す。図において、ｌは下部金属電極、３は透明電
極、５はＡＮ電極である。A schematic diagram of the integrated solar cell obtained in this way is shown in the second figure.
As shown in the figure. In the figure, 1 is a lower metal electrode, 3 is a transparent electrode, and 5 is an AN electrode.
本発明に係る薄膜型集積光電変換素子の応用として、パ
ワーＭＯ３）ランリスタの駆動用電源が考えられる。現
在実用化されているフォトＭＯＳリレー等は、単結晶太
陽電池とＭＯＳトランジスタと２つのチップより構成さ
れている。しかし、薄膜型の場合はＭＯＳ）ランリスタ
の上に絶縁層を介して形成可能である。As an application of the thin film type integrated photoelectric conversion element according to the present invention, a power source for driving a power MO3) run lister can be considered. Photo MOS relays and the like currently in practical use are composed of two chips: a single crystal solar cell and a MOS transistor. However, in the case of a thin film type, it can be formed on a MOS (MOS) run lister with an insulating layer interposed therebetween.
そこで、前記実施例の集積型太陽電池の２つの電極と同
じ位置にソース電極とゲート電極を持つパワーＭＯ３）
ランリスタの上に、同様なプロセスで集積型太陽電池を
形成した。この場合、既にソース電極、ゲート電極には
Ａ１膜が形成されているので、これをそのままボンディ
ングパッド用ＡＩ電極として用いることができる。つま
り、製造工程の簡略化が図れる。Therefore, a power MO3) having a source electrode and a gate electrode at the same positions as the two electrodes of the integrated solar cell of the above embodiment
An integrated solar cell was formed on top of the Lanristor using a similar process. In this case, since the A1 film has already been formed on the source electrode and the gate electrode, this can be used as it is as the AI electrode for the bonding pad. In other words, the manufacturing process can be simplified.
以上のようにして得られたセルを発光ダイオード（ＬＥ
Ｄ）と対向実装して、ＬＥＤを発光させたところ、太陽
電池の起電力によってパワーＭＯＳトランジスタを駆動
できることを確認した。The cell obtained in the above manner is used as a light emitting diode (LE).
When mounted opposite to D) and caused the LED to emit light, it was confirmed that the power MOS transistor could be driven by the electromotive force of the solar cell.
［発明の効果］
本発明は上記のように、薄膜型光電変換素子の製造にお
いて、まず前記絶縁基板上にボンディング用Ａβ電極を
形成し、次に下部金ＦＩ［極を前記ＡＩ電極を完全に覆
うように形成し、しかる後、光電変換層、上部透明電極
及び透明保護膜を順次形成し、最後にＡβ電極上の下部
金属電極を、下部金属電極とＡβ電極間の接続部を残し
て除去したことを特徴とするので、本発明によれば、湿
式エツチングによって加工する場合でも腐食の発生しな
い安定したプロセスが可能となる。[Effects of the Invention] As described above, in manufacturing a thin film photoelectric conversion element, the present invention first forms an Aβ electrode for bonding on the insulating substrate, and then completely removes the lower gold FI [pole from the AI electrode. After that, a photoelectric conversion layer, an upper transparent electrode, and a transparent protective film are sequentially formed, and finally, the lower metal electrode on the Aβ electrode is removed, leaving the connection between the lower metal electrode and the Aβ electrode. Therefore, according to the present invention, a stable process in which corrosion does not occur even when processing by wet etching is possible.
第１図は本発明のプロセスを示す図、第２し１は本発明
により製造されたｇｌｌ梨型太陽電池概略平面図、第３
図は従来例のプロセスを示す図であるＳ・・・絶縁基板
、ｌ・・・下部金属電極、２・・・光電変換層、３・・
・上部透明電極、４・・・透明保護膜、５・・・Ａｌ電
極。FIG. 1 is a diagram showing the process of the present invention, FIG. 2 is a schematic plan view of a GLL pear-shaped solar cell manufactured according to the present invention, and FIG.
The figure shows the process of a conventional example. S... Insulating substrate, L... Lower metal electrode, 2... Photoelectric conversion layer, 3...
- Upper transparent electrode, 4... transparent protective film, 5... Al electrode.
Claims (1)
明電極、透明保護膜、及びボンディング用Ａｌ電極をフ
ォトリソグラフィによって形成する薄膜型光電変換素子
の製造において、まず前記絶縁基板上にボンディング用
Ａｌ電極を形成し、次に下部金属電極を前記Ａｌ電極を
完全に覆うように形成し、しかる後、光電変換層、上部
透明電極及び透明保護膜を順次形成し、最後にＡｌ電極
上の下部金属電極を、下部金属電極とＡｌ電極間の接続
部を残して除去したことを特徴とする薄膜型光電変換素
子の製造方法。(1) In manufacturing a thin film photoelectric conversion element in which a lower metal electrode, a photoelectric conversion layer, an upper transparent electrode, a transparent protective film, and an Al electrode for bonding are formed on an insulating substrate by photolithography, first bonding is performed on the insulating substrate. A lower metal electrode is formed to completely cover the Al electrode, and then a photoelectric conversion layer, an upper transparent electrode, and a transparent protective film are sequentially formed, and finally a metal electrode on the Al electrode is formed. 1. A method for manufacturing a thin film photoelectric conversion element, characterized in that the lower metal electrode is removed leaving a connection between the lower metal electrode and the Al electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63158462A JPH027578A (en) | 1988-06-27 | 1988-06-27 | Manufacture of thin-film type photoelectric converting element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63158462A JPH027578A (en) | 1988-06-27 | 1988-06-27 | Manufacture of thin-film type photoelectric converting element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH027578A true JPH027578A (en) | 1990-01-11 |
Family
ID=15672269
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63158462A Pending JPH027578A (en) | 1988-06-27 | 1988-06-27 | Manufacture of thin-film type photoelectric converting element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH027578A (en) |
-
1988
- 1988-06-27 JP JP63158462A patent/JPH027578A/en active Pending
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