JPH02745U - - Google Patents
Info
- Publication number
- JPH02745U JPH02745U JP3021089U JP3021089U JPH02745U JP H02745 U JPH02745 U JP H02745U JP 3021089 U JP3021089 U JP 3021089U JP 3021089 U JP3021089 U JP 3021089U JP H02745 U JPH02745 U JP H02745U
- Authority
- JP
- Japan
- Prior art keywords
- wiring
- transistor
- terminal
- base terminal
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 3
- 239000012535 impurity Substances 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 150000003377 silicon compounds Chemical class 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 4
- 230000007257 malfunction Effects 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
Description
第１図は誤動作を起す従来の半導体装置の配線
パターン例、第３図及び第５図は本考案の実施例
の半導体装置の配線パターン構成図である。又、
第２図、第４図、第６図は各々第１図、第３図、
第５図の等価回路図を表わしたものであり、各々
の回路図及びパターン構成図に記されたトランジ
スターＴ１，Ｔ２は同一型状であり、又電流Ｉ１
，Ｉ２は各々のトランジスターＴ１，Ｔ２のエミ
ツター端子から流れる電流値として定義してある
。
ｃ１，ｅ１，ｂ１……各々トランジスターＴ１
のコレクター端子、エミツター端子、ベース端子
、ｃ２，ｅ２，ｂ２……各々トランジスターＴ２
のコレクター端子、エミツター端子、ベース端子
、Ｌ１，Ｌ１１，Ｌ２１……トランジスターＴ１
のコレクター端子、ベース端子とトランジスター
Ｔ２のベース端子へ接続される配線の総称、Ｌ２
，Ｌ１２，Ｌ２２……トランジスターＴ２のコレ
クター端子に接続される配線、Ｌ３，Ｌ１３，Ｌ
２３……トランジスターＴ１のエミツター端子と
、トランジスターＴ２のエミツター端子に接続さ
れる最低電位電極配線、Ｌ１４，Ｌ１５，Ｌ１６
……配線Ｌ１１において、各々トランジスターＴ
１のコレクター端子ｃ１、ベース端子ｂ１、及び
トランジスターＴ２のベース端子ｂ２に接続され
る配線、Ｌ２４，Ｌ２５，Ｌ２６……配線Ｌ２１
において、各々トランジスターＴ１のコレクター
端子ｃ１、ベース端子ｂ１、及びトランジスター
Ｔ２のベース端子ｂ２に接続される配線、ｒ１，
ｒ２，ｒ３，ｒ１４，ｒ１５，ｒ１６，ｒ２４，
ｒ２５，ｒ２６，ｒ２７……配線抵抗。
FIG. 1 is an example of a wiring pattern of a conventional semiconductor device that causes malfunctions, and FIGS. 3 and 5 are diagrams showing the configuration of wiring patterns of a semiconductor device according to an embodiment of the present invention. or,
Figures 2, 4, and 6 are Figures 1, 3, and 6, respectively.
This is an equivalent circuit diagram of FIG. 5, and the transistors T1 and T2 shown in each circuit diagram and pattern configuration diagram are of the same type, and the current I1
, I2 are defined as the current values flowing from the emitter terminals of the respective transistors T1 and T2. c1, e1, b1...each transistor T1
Collector terminal, emitter terminal, base terminal, c2, e2, b2...each transistor T2
collector terminal, emitter terminal, base terminal, L1, L11, L21...transistor T1
L2 is a general term for the wiring connected to the collector terminal and base terminal of transistor T2, and the base terminal of transistor T2.
, L12, L22...Wiring connected to the collector terminal of transistor T2, L3, L13, L
23...Lowest potential electrode wiring connected to the emitter terminal of transistor T1 and the emitter terminal of transistor T2, L14, L15, L16
...In the wiring L11, each transistor T
1 collector terminal c1, base terminal b1, and wiring connected to the base terminal b2 of transistor T2, L24, L25, L26...Wiring L21
, wirings r1, connected to the collector terminal c1 and base terminal b1 of the transistor T1, and the base terminal b2 of the transistor T2, respectively;
r2, r3, r14, r15, r16, r24,
r25, r26, r27...Wiring resistance.
Claims (1)
り短絡した第１トランジスターの該ベース端子と
コレクター端子との短絡配線を、該第１トランジ
スタに隣接した第２トランジスターのベース端子
に接続し、これら第１および第２トランジスタの
エミツタ同士を共通に配線した回路の配線パター
ン構成において、該第１トランジスターのコレク
ター端子へ接続される配線と該第１トランジスタ
ーのベース端子へ接続される配線との接続点から
前記第２トランジスターのベース端子への配線が
分岐されて接続されており、かつ前記接続点から
前記第１のトランジスターのベースへの配線抵抗
と前記接続点から前記第２のトランジスターのベ
ースへの配線抵抗をほぼ等しくされている事を特
徴とする半導体装置。 (2) 前記配線が不純物をドープした多結晶シリ
コン膜を用いて形成されている事を特徴とする特
許請求の範囲第(1)項記載の半導体装置。 (3) 前記配線は前記不純物をドープした多結晶
シリコン膜上に金属膜を有する事を特徴とする特
許請求の範囲第(2)項記載の半導体装置。 (4) 前記配線は前記不純物をドープした多結晶
シリコン膜上に導電性のケイ素化合物を有する事
を特徴とする特許請求の範囲第(2)項記載の半導
体装置。[Claims for Utility Model Registration] (1) Connect the base terminal and collector terminal of a first transistor whose base terminal and collector terminal are short-circuited by wiring to the base terminal of a second transistor adjacent to the first transistor. In a wiring pattern configuration of a circuit in which the emitters of the first and second transistors are commonly wired, the wire connected to the collector terminal of the first transistor and the base terminal of the first transistor are connected to the terminal. The wiring from the connection point with the wiring to the base terminal of the second transistor is branched and connected, and the wiring resistance from the connection point to the base of the first transistor and the wiring resistance from the connection point to the base terminal of the first transistor are branched and connected. A semiconductor device characterized in that the wiring resistances to the bases of the transistors are approximately equal. (2) The semiconductor device according to claim (1), wherein the wiring is formed using a polycrystalline silicon film doped with impurities. (3) The semiconductor device according to claim (2), wherein the wiring has a metal film on the impurity-doped polycrystalline silicon film. (4) The semiconductor device according to claim (2), wherein the wiring has a conductive silicon compound on the impurity-doped polycrystalline silicon film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1989030210U JPH054285Y2 (en) | 1989-03-16 | 1989-03-16 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1989030210U JPH054285Y2 (en) | 1989-03-16 | 1989-03-16 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02745U true JPH02745U (en) | 1990-01-05 |
| JPH054285Y2 JPH054285Y2 (en) | 1993-02-02 |
Family
ID=31255076
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1989030210U Expired - Lifetime JPH054285Y2 (en) | 1989-03-16 | 1989-03-16 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH054285Y2 (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4979486A (en) * | 1972-12-06 | 1974-07-31 |
-
1989
- 1989-03-16 JP JP1989030210U patent/JPH054285Y2/ja not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4979486A (en) * | 1972-12-06 | 1974-07-31 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH054285Y2 (en) | 1993-02-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH02745U (en) | ||
| JPH11332089A (en) | Overvoltage protective circuit | |
| JPH0328517Y2 (en) | ||
| JPS5912824Y2 (en) | transistor circuit | |
| JP2529396B2 (en) | Semiconductor integrated circuit device | |
| JP3179211B2 (en) | Semiconductor integrated circuit device | |
| JP2594063Y2 (en) | Driver circuit for pin electronics card | |
| JPH0220863Y2 (en) | ||
| JPS5924195Y2 (en) | transistor circuit | |
| JPH0693489B2 (en) | Method for manufacturing transistor device | |
| JPH032987Y2 (en) | ||
| JPH0658960B2 (en) | Small current thyristor | |
| JPH0442827B2 (en) | ||
| JPH0451094B2 (en) | ||
| JPS5873213A (en) | Current mirror circuit | |
| JPH0590848A (en) | Current mirror circuit in semiconductor integrated circuit | |
| JPH0525837U (en) | Electronic switch | |
| JPS6235672A (en) | Darlington transistor | |
| JPH0117170B2 (en) | ||
| JPH0581171B2 (en) | ||
| JPH0313747B2 (en) | ||
| JPH0245330B2 (en) | ||
| JPH0831621A (en) | Thick film resistor and method of controlling it in resistance | |
| JPS6049649U (en) | semiconductor equipment | |
| JPS6384157A (en) | Semlconductor device |