JPH027181B2 - - Google Patents
Info
- Publication number
- JPH027181B2 JPH027181B2 JP60015648A JP1564885A JPH027181B2 JP H027181 B2 JPH027181 B2 JP H027181B2 JP 60015648 A JP60015648 A JP 60015648A JP 1564885 A JP1564885 A JP 1564885A JP H027181 B2 JPH027181 B2 JP H027181B2
- Authority
- JP
- Japan
- Prior art keywords
- solder
- substrate
- chip
- semiconductor device
- thermal expansion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910000679 solder Inorganic materials 0.000 claims abstract description 42
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 239000004065 semiconductor Substances 0.000 claims abstract description 25
- 238000002844 melting Methods 0.000 claims abstract description 4
- 230000008018 melting Effects 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 16
- 238000000137 annealing Methods 0.000 claims description 14
- 238000010438 heat treatment Methods 0.000 claims description 5
- 230000008023 solidification Effects 0.000 claims 1
- 238000007711 solidification Methods 0.000 claims 1
- 238000003491 array Methods 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 230000008569 process Effects 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003032 molecular docking Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000005382 thermal cycling Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/818—Bonding techniques
- H01L2224/81801—Soldering or alloying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
- H01L2924/3511—Warping
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/341—Surface mounted components
- H05K3/3431—Leadless components
- H05K3/3436—Leadless components having an array of bottom contacts, e.g. pad grid array or ball grid array components
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| AU60125/86A AU581392B2 (en) | 1985-01-31 | 1986-07-14 | Phase-locked loop frequency synthesizer having reduced power consumption |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US625386 | 1984-06-28 | ||
| US06/625,386 US4611746A (en) | 1984-06-28 | 1984-06-28 | Process for forming improved solder connections for semiconductor devices with enhanced fatigue life |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6114798A JPS6114798A (ja) | 1986-01-22 |
| JPH027181B2 true JPH027181B2 (en, 2012) | 1990-02-15 |
Family
ID=24505839
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60015648A Granted JPS6114798A (ja) | 1984-06-28 | 1985-01-31 | はんだ相互接続を形成する方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4611746A (en, 2012) |
| EP (1) | EP0167030B1 (en, 2012) |
| JP (1) | JPS6114798A (en, 2012) |
| DE (1) | DE3570154D1 (en, 2012) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0789945B2 (ja) * | 1990-02-22 | 1995-10-04 | 株式会社ジャパンエナジー | ３，３，３―トリフルオロプロペンオキシドの製造方法 |
| US5102029A (en) * | 1990-06-22 | 1992-04-07 | Watkins-Johnson Company | Microwave integrated circuit package to eliminate alumina substrate cracking and method |
| US5438749A (en) * | 1993-09-02 | 1995-08-08 | Delco Electronics Corp. | Method of making a flex circuit interconnect for a microprocessor emulator and a method of testing |
| GB2308560B (en) * | 1995-12-23 | 1999-06-23 | Ibm | Improvements in solder joint strength |
| US6320139B1 (en) | 1998-11-12 | 2001-11-20 | Rockwell Automation Technologies, Inc. | Reflow selective shorting |
| WO2001086714A1 (de) * | 2000-05-05 | 2001-11-15 | Infineon Technologies Ag | Verfahren zum verlöten eines ersten metallelements und eines zweiten metallelements durch ein lotmaterial und halbleiterchip-montagevorrichtung |
| CN101910643B (zh) | 2007-10-29 | 2013-08-28 | 山洋电气株式会社 | 二重反转式轴流鼓风机的控制方法 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1022165A (en) * | 1962-08-22 | 1966-03-09 | English Electric Co Ltd | Improvements in or relating to methods of bonding metallic bodies to non-metallic bodies and articles produced thereby |
| US3273979A (en) * | 1964-07-06 | 1966-09-20 | Rca Corp | Semiconductive devices |
| US3429040A (en) * | 1965-06-18 | 1969-02-25 | Ibm | Method of joining a component to a substrate |
| US3486223A (en) * | 1967-04-27 | 1969-12-30 | Philco Ford Corp | Solder bonding |
| US3811186A (en) * | 1972-12-11 | 1974-05-21 | Ibm | Method of aligning and attaching circuit devices on a substrate |
| US3921285A (en) * | 1974-07-15 | 1975-11-25 | Ibm | Method for joining microminiature components to a carrying structure |
| US4017889A (en) * | 1974-12-23 | 1977-04-12 | International Business Machines Corporation | Ternary barrier structure for conductive electrodes |
| JPS58191441A (ja) * | 1982-04-19 | 1983-11-08 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | ハンダ付けされた部品の応力軽減方法 |
-
1984
- 1984-06-28 US US06/625,386 patent/US4611746A/en not_active Expired - Fee Related
-
1985
- 1985-01-31 JP JP60015648A patent/JPS6114798A/ja active Granted
- 1985-06-13 DE DE8585107229T patent/DE3570154D1/de not_active Expired
- 1985-06-13 EP EP85107229A patent/EP0167030B1/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6114798A (ja) | 1986-01-22 |
| EP0167030B1 (en) | 1989-05-10 |
| US4611746A (en) | 1986-09-16 |
| EP0167030A1 (en) | 1986-01-08 |
| DE3570154D1 (en) | 1989-06-15 |
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