JPH0269002A - Microwave and millimeter wave accumulating equipment - Google Patents

Abstract

PURPOSE:To miniaturize and simplify the substrate of a microwave and millimeter wave integrated circuit(MIC) by providing bias circuits on the guiding body plate of a connection circuit which is conventionally provided for inputting and outputting a bias from and to the outside. CONSTITUTION:The input line of an input matching circuit 115 and the line of an output matching circuit 116 are respectively connected with bias circuits 117 by means of connecting gold lines 212. A micro-strip line 119 is also connected similarly. The bias circuits 117 are provided on the guiding body plate of a micro-strip line between a package side wall 118 and substrate housing space 114. This arrangement is adopted in order to utilize the space of the guiding body plate of the micro-strip line 119 which is conventionally provided for the connection with a circuit on an MIC substrate. Since the bias circuits 117 are provided on the guiding body plate, it becomes unnecessary to provide the bias circuits 117 on the NIC substrate and the MIC substrate can be miniaturized.

Description

[Detailed Description of the Invention] [Summary] It relates to integrated devices in frequency bands ranging from microwaves to millimeter waves, particularly packaged microwave/microwave devices containing active elements.
A millimeter wave integrated circuit, a connection circuit consisting of a dielectric plate and a transmission line provided on the dielectric plate and extending from inside the package to the outside, and a bias that is sent from the outside via the connection circuit to the active element. Regarding microwave/millimeter wave integrated devices consisting of circuits, the MIC substrate is miniaturized and simplified, and the package itself is
Furthermore, with the aim of providing a microwave/millimeter wave integrated device that can miniaturize the integrated device itself and can handle high frequencies, the present invention provides a microwave/millimeter wave integrated device in which the bias circuit is provided on the dielectric plate of the connection circuit. Configure.

[Industrial application field]

It relates to integrated devices for frequency bands ranging from microwaves to millimeter waves.

[Conventional technology]

When using microwave/millimeter wave integrated circuits, they are packaged to avoid the effects of air, dust, moisture, etc., and to improve reliability and performance.

FIG. 3 shows a conventional example of a microwave/millimeter wave integrated device. In the figure, 513 is a gallium arsenide transistor (CaAs).
FET), 514 is a microwave/millimeter wave integrated circuit substrate (MIC substrate), 515 is an input matching circuit, 516 is an output matching circuit, 517 is a bias circuit, and 518 is a package side wall. Input matching circuit 515. Output matching circuit 5
16. The GaAs FET 513 corresponds to a microwave/millimeter wave integrated circuit (MIC circuit). A bias circuit is provided on the MIC substrate in order to bias this microwave/millimeter wave integrated circuit and remove unnecessary frequencies.

Figures 4 and 5 show examples of packages for microwave/millimeter wave integrated circuits. In Figure 4.5, (a) is a view from directly above with the package lid removed, (b) is a side view, and (c) is a side view.
is a sectional view taken along line AA and line BB. In the figure, 311 is a power terminal, 312 is a high frequency terminal, 314 is a board storage space, 318 is a package side wall, 319 is a package lid,
320 is a package carrier, and 321 is a microstrip line.

As can be seen from FIG. 3.4, when packaged, a connection line with the outside, in this case a microstrip line 321, is required for input from the outside and output to the outside.

[Problem to be solved by the invention]

The inside of a package made of metal is considered to be similar to a waveguide,
At frequencies above a certain level, resonance may occur due to waveguide mode (waves traveling through the space inside the package).

Therefore, this phenomenon has been avoided by using small packages that generate resonance above the frequency band normally used.

However, as the frequency becomes higher, the wavelength becomes shorter, so even though the package shape must be made smaller and smaller as the frequency becomes higher, the proportion of the bias circuit on the MIC substrate is quite high. The problem was that it was not possible to downsize the

An object of the present invention is to provide a microwave/millimeter wave integrated device capable of supporting high frequencies by miniaturizing and simplifying the MIG substrate, reducing the size of the package itself, and by extension the integrated device itself.

There is no need to provide one, and the MIC board can be made smaller and simpler than before. Furthermore, by downsizing the MIC board, the package itself can be downsized, and a microwave/millimeter wave integrated device capable of handling high frequencies can be configured.

[Means to solve the problem]

FIG. 1 shows a diagram of the principle of the present invention. 1 in the figure is the package,
2 is a connection circuit, 3 is a microwave/millimeter wave integrated circuit, 4 is a bias circuit, and 5 is an input/output line.

The bias circuit 4, which was conventionally provided on the MIC board and caused problems due to its high tightening rate, is now installed on the dielectric plate of the connection circuit 2, which has conventionally been provided for inputting and outputting external bias. Configure a wave/millimeter wave integration device.

[Effect]

By providing a bias circuit on a dielectric plate as in the above-mentioned means, a bias circuit can be formed on a MIC substrate. [Embodiment] An embodiment of the present invention is shown in FIG. 2(a). In the figure, 111 is a power supply terminal, 112 is a high frequency terminal, and 113 is a GaAsFET.
, 114 is a board storage space, 115 is an input matching circuit,
116 is an output matching circuit, 117 is a bias circuit, 118
is the package side wall, 119 is the microstrip line (
(corresponding to the connection circuit 2 in the principle diagram), 120 is a package carrier, and this figure is a view from directly above with the package lid removed. The input line of the input matching circuit 115 and the line of the output matching circuit 116 are connected to the bias circuit 1, respectively.
17 and is connected by a connecting gold wire 212. The same applies to the microstrip line 119.

In this embodiment, the bias circuit 117 is provided on the dielectric plate of the microstrip line between the package side wall 118 and the substrate accommodation space 114 as shown in the figure. This utilizes the space of the dielectric plate of the microstrip line 119, which has been conventionally provided for connection with the circuit on the MIC board. The bias circuit 11
7 on the dielectric plate, there is no need to provide the bias circuit 117 on the MIC substrate (therefore, the MI
This means that the C board can be downsized.

Examples of the bias circuit 117 are shown in FIGS. 2(b) and 2(C). In microwave/millimeter wave integrated devices, the length of the bias circuit's tap 213 must be changed depending on the frequency used. Conventionally, it was etched on the MIC board together with the MIC circuit, and the length was adjusted at that time. In this embodiment, the length of the stud 213 is changed depending on the frequency to be used by connecting the stamp 213 to the previous stamp 213 with a connecting gold wire, so that it can correspond to a wide range of frequency bands. (b) is a case where the frequency is high, and (C) is a case where the frequency is low.

In the above embodiments, the bias circuit 117 is provided on the dielectric plate of the microstrip line 119 inside the package, but if there is no effect even if the lead-in line from the bias circuit 117 to the MIC circuit becomes long, it is possible to remove the bias circuit 117 from outside the package. It is also possible to provide the bias circuit 117 on the dielectric plate. Furthermore, the present invention applies not only to the package in which the power terminal 311 and the high-frequency terminal 312 are present in a perpendicular direction as shown in FIG. It is also possible to correspond to the following.

〔Effect of the invention 〕

According to the present invention, the MIC board can be made smaller by providing the bias circuit on the dielectric plate of the connection circuit.

It can be simplified and the package can also be made smaller. Therefore, it is possible to provide a microwave/millimeter wave integrated device that can handle high frequencies without worrying about resonance within the package.

[Brief explanation of the drawing]

FIG. 1 shows the principle of the present invention. FIG. 2 shows an embodiment of the invention. FIG. 3 shows a conventional example. FIG. 4.5 shows an example of a package. 119゜120゜212 ・ 213 ・ 211 ... Microstrip line 320 ... Package carrier ... Connection gold wire ... Stamp 1 in the diagram 1 ... Package 2 ... Connection circuit 3 ... Microwave, mm Wave integrated circuit 4...bias circuit 5...input/output line 1.11,
311, 511...Power terminal 11.2, 312, 51
2...High frequency terminal 113.513...GaAsF
ET114...Substrate accommodation space 115.515...Input matching circuit 116.516...Output matching circuit 117.517...Bias circuit

Claims (1)

[Scope of Claims] A packaged microwave/millimeter wave integrated circuit including an active element, a connection circuit consisting of a dielectric plate and a transmission line provided on the dielectric plate and extending from inside the package to the outside; In a microwave/millimeter wave integrated device comprising a bias circuit that applies a bias sent from the outside via the connection circuit to the active element, the bias circuit (4) is placed on the dielectric plate of the connection circuit (2). A microwave/millimeter wave integration device characterized by: