JPH0265273A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPH0265273A
JPH0265273A JP21674188A JP21674188A JPH0265273A JP H0265273 A JPH0265273 A JP H0265273A JP 21674188 A JP21674188 A JP 21674188A JP 21674188 A JP21674188 A JP 21674188A JP H0265273 A JPH0265273 A JP H0265273A
Authority
JP
Japan
Prior art keywords
contact hole
hole section
spikes
transistor
operation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21674188A
Inventor
Zenichi Akiyama
Original Assignee
Ricoh Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ricoh Co Ltd filed Critical Ricoh Co Ltd
Priority to JP21674188A priority Critical patent/JPH0265273A/en
Publication of JPH0265273A publication Critical patent/JPH0265273A/en
Application status is Pending legal-status Critical

Links

Abstract

PURPOSE: To decrease Al spikes in a contact hole so as to improve a semiconductor device in reliability by a method wherein a dummy contact hole not contributing the operation of a transistor is provided near to a contact hole contributing the operation of a transistor.
CONSTITUTION: A dummy contact hole section 2 other than a contact hole section 1 conductive to the transistor operation is provided near to the contact hole section 1, and Si is made to diffuse into Al through the dummy contact hole section 2, whereby Al spikes are restrained from occurring in the active contact hole section 1. The dummy contact hole 2 is provided within such a distance from the contact hole section 1 that Si can diffuse within an annealing time. By these processes, the effect of restraining spikes from occurring can be realized and the failure such as an interlaminar current leakage or the like can be decreased.
COPYRIGHT: (C)1990,JPO&Japio
JP21674188A 1988-08-31 1988-08-31 Semiconductor device Pending JPH0265273A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21674188A JPH0265273A (en) 1988-08-31 1988-08-31 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21674188A JPH0265273A (en) 1988-08-31 1988-08-31 Semiconductor device

Publications (1)

Publication Number Publication Date
JPH0265273A true JPH0265273A (en) 1990-03-05

Family

ID=16693206

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21674188A Pending JPH0265273A (en) 1988-08-31 1988-08-31 Semiconductor device

Country Status (1)

Country Link
JP (1) JPH0265273A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0449123A2 (en) * 1990-03-24 1991-10-02 Sony Corporation Liquid crystal display device
US6366331B1 (en) * 1999-01-29 2002-04-02 Nec Corporation Active matrix liquid-crystal display device having improved terminal connections

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0449123A2 (en) * 1990-03-24 1991-10-02 Sony Corporation Liquid crystal display device
EP0449123A3 (en) * 1990-03-24 1992-09-30 Sony Corporation Liquid crystal display device
US5208690A (en) * 1990-03-24 1993-05-04 Sony Corporation Liquid crystal display having a plurality of pixels with switching transistors
EP0723179A1 (en) * 1990-03-24 1996-07-24 Sony Corporation Liquid crystal display device
US6366331B1 (en) * 1999-01-29 2002-04-02 Nec Corporation Active matrix liquid-crystal display device having improved terminal connections

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