JPH0262482B2 - - Google Patents
Info
- Publication number
- JPH0262482B2 JPH0262482B2 JP14210482A JP14210482A JPH0262482B2 JP H0262482 B2 JPH0262482 B2 JP H0262482B2 JP 14210482 A JP14210482 A JP 14210482A JP 14210482 A JP14210482 A JP 14210482A JP H0262482 B2 JPH0262482 B2 JP H0262482B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- temperature
- film
- hydrogen
- plasma treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052739 hydrogen Inorganic materials 0.000 claims description 21
- 239000001257 hydrogen Substances 0.000 claims description 21
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 18
- 229910052710 silicon Inorganic materials 0.000 claims description 18
- 239000010703 silicon Substances 0.000 claims description 18
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 12
- 238000009832 plasma treatment Methods 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 8
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 8
- 229910021419 crystalline silicon Inorganic materials 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 230000031700 light absorption Effects 0.000 description 5
- 230000035945 sensitivity Effects 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
- 230000007774 longterm Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 238000002144 chemical decomposition reaction Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Landscapes
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Recrystallisation Techniques (AREA)
- Silicon Compounds (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14210482A JPS5935016A (ja) | 1982-08-18 | 1982-08-18 | 含水素シリコン層の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14210482A JPS5935016A (ja) | 1982-08-18 | 1982-08-18 | 含水素シリコン層の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5935016A JPS5935016A (ja) | 1984-02-25 |
| JPH0262482B2 true JPH0262482B2 (nl) | 1990-12-25 |
Family
ID=15307519
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14210482A Granted JPS5935016A (ja) | 1982-08-18 | 1982-08-18 | 含水素シリコン層の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5935016A (nl) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62169320A (ja) * | 1986-01-21 | 1987-07-25 | Sharp Corp | 薄膜の形成方法 |
| JPH05109638A (ja) * | 1988-09-30 | 1993-04-30 | Sanyo Electric Co Ltd | 多結晶シリコン膜の形成方法 |
| JP3369154B2 (ja) * | 2000-09-01 | 2003-01-20 | 科学技術振興事業団 | 有機共蒸着膜の製造方法 |
| JP4257332B2 (ja) † | 2003-07-24 | 2009-04-22 | 株式会社カネカ | シリコン系薄膜太陽電池 |
| ES2405597T3 (es) * | 2003-07-24 | 2013-05-31 | Kaneka Corporation | Convertidor fotoeléctrico apilado |
-
1982
- 1982-08-18 JP JP14210482A patent/JPS5935016A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5935016A (ja) | 1984-02-25 |
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