JPH0262482B2 - - Google Patents

Info

Publication number
JPH0262482B2
JPH0262482B2 JP57142104A JP14210482A JPH0262482B2 JP H0262482 B2 JPH0262482 B2 JP H0262482B2 JP 57142104 A JP57142104 A JP 57142104A JP 14210482 A JP14210482 A JP 14210482A JP H0262482 B2 JPH0262482 B2 JP H0262482B2
Authority
JP
Japan
Prior art keywords
silicon
temperature
film
hydrogen
plasma treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57142104A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5935016A (ja
Inventor
Nobuo Nakamura
Juichi Shimada
Sunao Matsubara
Shinichi Muramatsu
Masatoshi Utaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP57142104A priority Critical patent/JPS5935016A/ja
Publication of JPS5935016A publication Critical patent/JPS5935016A/ja
Publication of JPH0262482B2 publication Critical patent/JPH0262482B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Recrystallisation Techniques (AREA)
  • Silicon Compounds (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
JP57142104A 1982-08-18 1982-08-18 含水素シリコン層の製造方法 Granted JPS5935016A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57142104A JPS5935016A (ja) 1982-08-18 1982-08-18 含水素シリコン層の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57142104A JPS5935016A (ja) 1982-08-18 1982-08-18 含水素シリコン層の製造方法

Publications (2)

Publication Number Publication Date
JPS5935016A JPS5935016A (ja) 1984-02-25
JPH0262482B2 true JPH0262482B2 (enExample) 1990-12-25

Family

ID=15307519

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57142104A Granted JPS5935016A (ja) 1982-08-18 1982-08-18 含水素シリコン層の製造方法

Country Status (1)

Country Link
JP (1) JPS5935016A (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62169320A (ja) * 1986-01-21 1987-07-25 Sharp Corp 薄膜の形成方法
JPH05109638A (ja) * 1988-09-30 1993-04-30 Sanyo Electric Co Ltd 多結晶シリコン膜の形成方法
JP3369154B2 (ja) * 2000-09-01 2003-01-20 科学技術振興事業団 有機共蒸着膜の製造方法
ATE512467T1 (de) * 2003-07-24 2011-06-15 Kaneka Corp Verfahren zur herstellung einer dünnschichtsiliziumsolarzelle
KR101008274B1 (ko) * 2003-07-24 2011-01-14 가부시키가이샤 가네카 적층형 광전 변환 장치

Also Published As

Publication number Publication date
JPS5935016A (ja) 1984-02-25

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