JPH026226B2 - - Google Patents

Info

Publication number
JPH026226B2
JPH026226B2 JP56192051A JP19205181A JPH026226B2 JP H026226 B2 JPH026226 B2 JP H026226B2 JP 56192051 A JP56192051 A JP 56192051A JP 19205181 A JP19205181 A JP 19205181A JP H026226 B2 JPH026226 B2 JP H026226B2
Authority
JP
Japan
Prior art keywords
region
conductivity type
electrode
layer
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56192051A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5893291A (ja
Inventor
Hisao Takeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Fuji Electric Corporate Research and Development Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd, Fuji Electric Corporate Research and Development Ltd filed Critical Fuji Electric Co Ltd
Priority to JP56192051A priority Critical patent/JPS5893291A/ja
Publication of JPS5893291A publication Critical patent/JPS5893291A/ja
Publication of JPH026226B2 publication Critical patent/JPH026226B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP56192051A 1981-11-30 1981-11-30 集積回路用ダイオ−ド Granted JPS5893291A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56192051A JPS5893291A (ja) 1981-11-30 1981-11-30 集積回路用ダイオ−ド

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56192051A JPS5893291A (ja) 1981-11-30 1981-11-30 集積回路用ダイオ−ド

Publications (2)

Publication Number Publication Date
JPS5893291A JPS5893291A (ja) 1983-06-02
JPH026226B2 true JPH026226B2 (cs) 1990-02-08

Family

ID=16284793

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56192051A Granted JPS5893291A (ja) 1981-11-30 1981-11-30 集積回路用ダイオ−ド

Country Status (1)

Country Link
JP (1) JPS5893291A (cs)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5548958A (en) * 1978-10-02 1980-04-08 Nec Corp Semiconductor device
JPS55158663A (en) * 1979-05-29 1980-12-10 Sanyo Electric Co Ltd Transistor

Also Published As

Publication number Publication date
JPS5893291A (ja) 1983-06-02

Similar Documents

Publication Publication Date Title
US4117507A (en) Diode formed in integrated-circuit structure
JPH0347593B2 (cs)
US5994740A (en) Semiconductor device
JPH0324791B2 (cs)
US3590345A (en) Double wall pn junction isolation for monolithic integrated circuit components
JPH0230588B2 (cs)
US20010040266A1 (en) Integrated circuit with highly efficient junction insulation
JP3302275B2 (ja) 半導体デバイス
US3702955A (en) Multiple emitter transistor apparatus
JPH025532A (ja) ｐｎｐ型の縦型孤立コレクタトランジスタ
JPH049378B2 (cs)
KR100867572B1 (ko) 고전압 섬 영역 내에 바이폴라 트랜지스터가 내장된고전압 집적 회로
US4814852A (en) Controlled voltage drop diode
US4131806A (en) I.I.L. with injector base resistor and schottky clamp
JPH026226B2 (cs)
JPH0236558A (ja) 半導体装置
JPH055373B2 (cs)
JPS6359262B2 (cs)
US4303932A (en) Lateral transistor free of parisitics
JP2901275B2 (ja) 半導体集積回路装置
JPH0750783B2 (ja) 静電保護回路
JPS62104068A (ja) 半導体集積回路装置
JPH0474478A (ja) ダイオード
JPS6223466B2 (cs)
JPS6231502B2 (cs)