JPH0261145B2 - - Google Patents
Info
- Publication number
- JPH0261145B2 JPH0261145B2 JP56048584A JP4858481A JPH0261145B2 JP H0261145 B2 JPH0261145 B2 JP H0261145B2 JP 56048584 A JP56048584 A JP 56048584A JP 4858481 A JP4858481 A JP 4858481A JP H0261145 B2 JPH0261145 B2 JP H0261145B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- single crystal
- annealing
- axis
- energy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H10P34/42—
Landscapes
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56048584A JPS57162434A (en) | 1981-03-31 | 1981-03-31 | Annealing method for single crystal wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56048584A JPS57162434A (en) | 1981-03-31 | 1981-03-31 | Annealing method for single crystal wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57162434A JPS57162434A (en) | 1982-10-06 |
| JPH0261145B2 true JPH0261145B2 (OSRAM) | 1990-12-19 |
Family
ID=12807444
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56048584A Granted JPS57162434A (en) | 1981-03-31 | 1981-03-31 | Annealing method for single crystal wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57162434A (OSRAM) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4927778A (en) * | 1988-08-05 | 1990-05-22 | Eastman Kodak Company | Method of improving yield of LED arrays |
| JP5614739B2 (ja) * | 2010-02-18 | 2014-10-29 | 国立大学法人埼玉大学 | 基板内部加工装置および基板内部加工方法 |
| JP6119712B2 (ja) * | 2014-10-08 | 2017-04-26 | トヨタ自動車株式会社 | 半導体装置の製造方法 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55150238A (en) * | 1979-05-10 | 1980-11-22 | Matsushita Electric Ind Co Ltd | Method of irradiating laser beam |
-
1981
- 1981-03-31 JP JP56048584A patent/JPS57162434A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57162434A (en) | 1982-10-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6215595B1 (en) | Apparatus and method for laser radiation | |
| JP7182456B2 (ja) | レーザ加工方法、及び、半導体部材製造方法 | |
| KR950012909B1 (ko) | 절연층상에 반도체성 물질층을 결정화하는 방법 및 장치 | |
| US8338316B2 (en) | Low temperature process for depositing a high extinction coefficient non-peeling optical absorber for a scanning laser surface anneal of implanted dopants | |
| TW200809940A (en) | Laser working method | |
| JP3054310B2 (ja) | 半導体デバイスのレーザー処理方法 | |
| JP7560055B2 (ja) | レーザ加工方法、半導体部材製造方法及びレーザ加工装置 | |
| JPH1074697A (ja) | 多結晶シリコン膜、多結晶シリコンの製造方法、薄膜トランジスタの製造方法、液晶表示装置の製造方法、及びレーザアニール装置 | |
| JPH07307304A (ja) | 半導体デバイスのレーザー処理方法 | |
| JPH0116006B2 (OSRAM) | ||
| JP7330695B2 (ja) | レーザ加工方法、及び、半導体デバイス製造方法 | |
| JPH0261145B2 (OSRAM) | ||
| US4719183A (en) | Forming single crystal silicon on insulator by irradiating a laser beam having dual peak energy distribution onto polysilicon on a dielectric substrate having steps | |
| JPS641046B2 (OSRAM) | ||
| JP2004289140A (ja) | レーザ照射装置及びレーザ照射方法並びに半導体装置の作製方法。 | |
| JPH0420254B2 (OSRAM) | ||
| CN110578168A (zh) | 吸除层的形成方法及硅晶圆 | |
| JP3201395B2 (ja) | 半導体薄膜の製造方法 | |
| JP3483840B2 (ja) | アクティブマトリクス表示装置の作製方法 | |
| JPH0442358B2 (OSRAM) | ||
| JPH01256124A (ja) | Mos型半導体装置の製造方法 | |
| JPH11121379A (ja) | 多結晶シリコン薄膜の特性改善方法 | |
| JP7246919B2 (ja) | レーザ加工方法、半導体部材製造方法及びレーザ加工装置 | |
| JPS6380521A (ja) | 半導体薄膜結晶層の製造方法 | |
| JPS58222521A (ja) | 半導体膜の形成法 |