JPH0261140B2 - - Google Patents

Info

Publication number
JPH0261140B2
JPH0261140B2 JP6896080A JP6896080A JPH0261140B2 JP H0261140 B2 JPH0261140 B2 JP H0261140B2 JP 6896080 A JP6896080 A JP 6896080A JP 6896080 A JP6896080 A JP 6896080A JP H0261140 B2 JPH0261140 B2 JP H0261140B2
Authority
JP
Japan
Prior art keywords
high frequency
vacuum container
frequency power
plasma
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP6896080A
Other languages
English (en)
Japanese (ja)
Other versions
JPS56165327A (en
Inventor
Yoshimichi Hirobe
Hiromitsu Enami
Yoshinori Kureishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP6896080A priority Critical patent/JPS56165327A/ja
Publication of JPS56165327A publication Critical patent/JPS56165327A/ja
Publication of JPH0261140B2 publication Critical patent/JPH0261140B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
JP6896080A 1980-05-26 1980-05-26 Method and apparatus for monitoring plasma etching Granted JPS56165327A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6896080A JPS56165327A (en) 1980-05-26 1980-05-26 Method and apparatus for monitoring plasma etching

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6896080A JPS56165327A (en) 1980-05-26 1980-05-26 Method and apparatus for monitoring plasma etching

Publications (2)

Publication Number Publication Date
JPS56165327A JPS56165327A (en) 1981-12-18
JPH0261140B2 true JPH0261140B2 (zh) 1990-12-19

Family

ID=13388744

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6896080A Granted JPS56165327A (en) 1980-05-26 1980-05-26 Method and apparatus for monitoring plasma etching

Country Status (1)

Country Link
JP (1) JPS56165327A (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58140126A (ja) * 1982-02-16 1983-08-19 Matsushita Electric Ind Co Ltd ドライエツチング方法
JPH0547717A (ja) * 1991-01-22 1993-02-26 Tokyo Electron Ltd プラズマ表面処理の終点検出方法及びプラズマ表面処理装置の状態監視方法
JP3194022B2 (ja) * 1992-07-06 2001-07-30 東京エレクトロン株式会社 プラズマ表面処理の制御装置
JP5044307B2 (ja) * 2007-07-05 2012-10-10 株式会社アルバック 薄膜形成方法

Also Published As

Publication number Publication date
JPS56165327A (en) 1981-12-18

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