JPH0258349U - - Google Patents
Info
- Publication number
- JPH0258349U JPH0258349U JP1988137143U JP13714388U JPH0258349U JP H0258349 U JPH0258349 U JP H0258349U JP 1988137143 U JP1988137143 U JP 1988137143U JP 13714388 U JP13714388 U JP 13714388U JP H0258349 U JPH0258349 U JP H0258349U
- Authority
- JP
- Japan
- Prior art keywords
- floating gate
- gate
- different
- floating
- oxide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1988137143U JPH0723959Y2 (ja) | 1988-10-20 | 1988-10-20 | 不揮発性半導体メモリ装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1988137143U JPH0723959Y2 (ja) | 1988-10-20 | 1988-10-20 | 不揮発性半導体メモリ装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0258349U true JPH0258349U (enExample) | 1990-04-26 |
| JPH0723959Y2 JPH0723959Y2 (ja) | 1995-05-31 |
Family
ID=31398301
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1988137143U Expired - Lifetime JPH0723959Y2 (ja) | 1988-10-20 | 1988-10-20 | 不揮発性半導体メモリ装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0723959Y2 (enExample) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60169172A (ja) * | 1984-02-13 | 1985-09-02 | Toshiba Corp | 絶縁ゲ−ト型電界効果トランジスタ |
| JPS6294987A (ja) * | 1985-10-21 | 1987-05-01 | Nec Corp | Ｍｉｓ電界効果型半導体装置及びその情報の検出方法 |
-
1988
- 1988-10-20 JP JP1988137143U patent/JPH0723959Y2/ja not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60169172A (ja) * | 1984-02-13 | 1985-09-02 | Toshiba Corp | 絶縁ゲ−ト型電界効果トランジスタ |
| JPS6294987A (ja) * | 1985-10-21 | 1987-05-01 | Nec Corp | Ｍｉｓ電界効果型半導体装置及びその情報の検出方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0723959Y2 (ja) | 1995-05-31 |