JPH0420250U - - Google Patents
Info
- Publication number
- JPH0420250U JPH0420250U JP1990061202U JP6120290U JPH0420250U JP H0420250 U JPH0420250 U JP H0420250U JP 1990061202 U JP1990061202 U JP 1990061202U JP 6120290 U JP6120290 U JP 6120290U JP H0420250 U JPH0420250 U JP H0420250U
- Authority
- JP
- Japan
- Prior art keywords
- ultraviolet rays
- memory cell
- metal layer
- gate
- irradiated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1990061202U JPH0420250U (enExample) | 1990-06-08 | 1990-06-08 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1990061202U JPH0420250U (enExample) | 1990-06-08 | 1990-06-08 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0420250U true JPH0420250U (enExample) | 1992-02-20 |
Family
ID=31589245
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1990061202U Pending JPH0420250U (enExample) | 1990-06-08 | 1990-06-08 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0420250U (enExample) |
-
1990
- 1990-06-08 JP JP1990061202U patent/JPH0420250U/ja active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| IT8022538A0 (it) | Cella di memoria non volatile a 'gate' flottante elettricamente alterabile. | |
| DE69625755D1 (de) | Nichtflüchtige zwei-Transistor Speicherzelle mit einem einzigen Polysiliziumgate | |
| IT1213249B (it) | Processo per la fabbricazione distrutture integrate includenti celle di memoria non volatili con strati di silicio autoallineati ed associati transistori. | |
| JPH0420250U (enExample) | ||
| JPS5519820A (en) | Semiconductor device | |
| JPH0258349U (enExample) | ||
| JPS61118634U (enExample) | ||
| JPS6183044U (enExample) | ||
| JPH027547Y2 (enExample) | ||
| JPH0289841U (enExample) | ||
| JPS6222799U (enExample) | ||
| JPS63199465A (ja) | 半導体記憶装置 | |
| JPS63140583A (ja) | 半導体記憶装置 | |
| JPS6193900U (enExample) | ||
| JPS61136400U (enExample) | ||
| JPH0310555U (enExample) | ||
| JPH01154629U (enExample) | ||
| JPS61165896A (ja) | フロ−テイングゲ−ト型不揮発性メモリ素子 | |
| JPH01107137U (enExample) | ||
| JPS6316699U (enExample) | ||
| JPH01161343U (enExample) | ||
| JPS61104339U (enExample) | ||
| JPS6424597U (enExample) | ||
| JPS61187825U (enExample) | ||
| JPH0366694U (enExample) |