JPH0256462U - - Google Patents
Info
- Publication number
- JPH0256462U JPH0256462U JP13546088U JP13546088U JPH0256462U JP H0256462 U JPH0256462 U JP H0256462U JP 13546088 U JP13546088 U JP 13546088U JP 13546088 U JP13546088 U JP 13546088U JP H0256462 U JPH0256462 U JP H0256462U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- thin film
- drain electrode
- film transistor
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 4
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 1
Landscapes
- Thin Film Transistor (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1988135460U JPH0747876Y2 (ja) | 1988-10-19 | 1988-10-19 | 薄膜トラジスタ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1988135460U JPH0747876Y2 (ja) | 1988-10-19 | 1988-10-19 | 薄膜トラジスタ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0256462U true JPH0256462U (fr) | 1990-04-24 |
| JPH0747876Y2 JPH0747876Y2 (ja) | 1995-11-01 |
Family
ID=31395107
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1988135460U Expired - Lifetime JPH0747876Y2 (ja) | 1988-10-19 | 1988-10-19 | 薄膜トラジスタ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0747876Y2 (fr) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009231821A (ja) * | 2008-02-29 | 2009-10-08 | Semiconductor Energy Lab Co Ltd | 薄膜トランジスタ及び表示装置 |
| JP2009239263A (ja) * | 2008-03-01 | 2009-10-15 | Semiconductor Energy Lab Co Ltd | 薄膜トランジスタ及び表示装置 |
| JP2010199566A (ja) * | 2009-01-30 | 2010-09-09 | Semiconductor Energy Lab Co Ltd | 半導体装置及びその作製方法 |
| US8558236B2 (en) | 2007-12-03 | 2013-10-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP2018509761A (ja) * | 2015-05-11 | 2018-04-05 | 深▲セン▼市華星光電技術有限公司 | 共平面型酸化物半導体ｔｆｔ基板構造及びその製作方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6235569A (ja) * | 1985-08-09 | 1987-02-16 | Agency Of Ind Science & Technol | Ｍｉｓ型トランジスタ及びその製造方法 |
| JPS63258072A (ja) * | 1987-04-15 | 1988-10-25 | Nec Corp | 電界効果トランジスタ |
-
1988
- 1988-10-19 JP JP1988135460U patent/JPH0747876Y2/ja not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6235569A (ja) * | 1985-08-09 | 1987-02-16 | Agency Of Ind Science & Technol | Ｍｉｓ型トランジスタ及びその製造方法 |
| JPS63258072A (ja) * | 1987-04-15 | 1988-10-25 | Nec Corp | 電界効果トランジスタ |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8558236B2 (en) | 2007-12-03 | 2013-10-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP2009231821A (ja) * | 2008-02-29 | 2009-10-08 | Semiconductor Energy Lab Co Ltd | 薄膜トランジスタ及び表示装置 |
| JP2009239263A (ja) * | 2008-03-01 | 2009-10-15 | Semiconductor Energy Lab Co Ltd | 薄膜トランジスタ及び表示装置 |
| JP2010199566A (ja) * | 2009-01-30 | 2010-09-09 | Semiconductor Energy Lab Co Ltd | 半導体装置及びその作製方法 |
| JP2018509761A (ja) * | 2015-05-11 | 2018-04-05 | 深▲セン▼市華星光電技術有限公司 | 共平面型酸化物半導体ｔｆｔ基板構造及びその製作方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0747876Y2 (ja) | 1995-11-01 |