JPH0253513B2 - - Google Patents

Info

Publication number
JPH0253513B2
JPH0253513B2 JP16042587A JP16042587A JPH0253513B2 JP H0253513 B2 JPH0253513 B2 JP H0253513B2 JP 16042587 A JP16042587 A JP 16042587A JP 16042587 A JP16042587 A JP 16042587A JP H0253513 B2 JPH0253513 B2 JP H0253513B2
Authority
JP
Japan
Prior art keywords
oxide film
etching
sccm
silicon
chf
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP16042587A
Other languages
English (en)
Japanese (ja)
Other versions
JPS644482A (en
Inventor
Tetsuhiko Sanpei
Toshihiko Fukuyama
Akira Hasegawa
Kazuo Maeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Japan Inc
Original Assignee
Applied Materials Japan Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Japan Inc filed Critical Applied Materials Japan Inc
Priority to JP16042587A priority Critical patent/JPS644482A/ja
Publication of JPS644482A publication Critical patent/JPS644482A/ja
Publication of JPH0253513B2 publication Critical patent/JPH0253513B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • ing And Chemical Polishing (AREA)
JP16042587A 1987-06-26 1987-06-26 High-selectivity dry etching method for oxide film on silicon Granted JPS644482A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16042587A JPS644482A (en) 1987-06-26 1987-06-26 High-selectivity dry etching method for oxide film on silicon

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16042587A JPS644482A (en) 1987-06-26 1987-06-26 High-selectivity dry etching method for oxide film on silicon

Publications (2)

Publication Number Publication Date
JPS644482A JPS644482A (en) 1989-01-09
JPH0253513B2 true JPH0253513B2 (enrdf_load_html_response) 1990-11-16

Family

ID=15714649

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16042587A Granted JPS644482A (en) 1987-06-26 1987-06-26 High-selectivity dry etching method for oxide film on silicon

Country Status (1)

Country Link
JP (1) JPS644482A (enrdf_load_html_response)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0945896B1 (en) * 1996-10-11 2005-08-10 Tokyo Electron Limited Plasma etching method

Also Published As

Publication number Publication date
JPS644482A (en) 1989-01-09

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees