JPH025309B2 - - Google Patents
Info
- Publication number
- JPH025309B2 JPH025309B2 JP56174313A JP17431381A JPH025309B2 JP H025309 B2 JPH025309 B2 JP H025309B2 JP 56174313 A JP56174313 A JP 56174313A JP 17431381 A JP17431381 A JP 17431381A JP H025309 B2 JPH025309 B2 JP H025309B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- type
- gate
- emitter
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 9
- 230000015556 catabolic process Effects 0.000 description 11
- 238000002955 isolation Methods 0.000 description 8
- 230000006378 damage Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000605 extraction Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0259—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Protection Of Static Devices (AREA)
- Amplifiers (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56174313A JPS5874081A (ja) | 1981-10-29 | 1981-10-29 | 半導体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56174313A JPS5874081A (ja) | 1981-10-29 | 1981-10-29 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5874081A JPS5874081A (ja) | 1983-05-04 |
JPH025309B2 true JPH025309B2 (sv) | 1990-02-01 |
Family
ID=15976462
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56174313A Granted JPS5874081A (ja) | 1981-10-29 | 1981-10-29 | 半導体装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5874081A (sv) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01262654A (ja) * | 1988-04-14 | 1989-10-19 | Toshiba Corp | 半導体装置 |
DE59804349D1 (de) * | 1997-09-30 | 2002-07-11 | Infineon Technologies Ag | Integrierte halbleiterschaltung mit schutzstruktur zum schutz vor elektrostatischer entladung |
US7026705B2 (en) | 2003-02-28 | 2006-04-11 | Renesas Technology Corp. | Semiconductor device with surge protection circuit capable of preventing current leakage |
-
1981
- 1981-10-29 JP JP56174313A patent/JPS5874081A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5874081A (ja) | 1983-05-04 |
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