JPH025300B2 - - Google Patents
Info
- Publication number
- JPH025300B2 JPH025300B2 JP55047349A JP4734980A JPH025300B2 JP H025300 B2 JPH025300 B2 JP H025300B2 JP 55047349 A JP55047349 A JP 55047349A JP 4734980 A JP4734980 A JP 4734980A JP H025300 B2 JPH025300 B2 JP H025300B2
- Authority
- JP
- Japan
- Prior art keywords
- forming
- film
- window
- barrier diode
- oxide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H10D48/34—Bipolar devices
- H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions
Landscapes
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4734980A JPS56144579A (en) | 1980-04-10 | 1980-04-10 | Production of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4734980A JPS56144579A (en) | 1980-04-10 | 1980-04-10 | Production of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS56144579A JPS56144579A (en) | 1981-11-10 |
JPH025300B2 true JPH025300B2 (enrdf_load_stackoverflow) | 1990-02-01 |
Family
ID=12772666
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4734980A Granted JPS56144579A (en) | 1980-04-10 | 1980-04-10 | Production of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56144579A (enrdf_load_stackoverflow) |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5272586A (en) * | 1975-12-15 | 1977-06-17 | Fujitsu Ltd | Production of semiconductor device |
JPS5547348A (en) * | 1978-09-28 | 1980-04-03 | Hitachi Metals Ltd | Magnetic alloy for dental surgery |
-
1980
- 1980-04-10 JP JP4734980A patent/JPS56144579A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS56144579A (en) | 1981-11-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US3193418A (en) | Semiconductor device fabrication | |
KR930011432B1 (ko) | 접촉 홀의 형성방법 | |
JPS6250987B2 (enrdf_load_stackoverflow) | ||
US4792534A (en) | Method of manufacturing a semiconductor device involving sidewall spacer formation | |
JPH0461326A (ja) | 半導体装置の製造方法 | |
US4371423A (en) | Method of manufacturing semiconductor device utilizing a lift-off technique | |
JPS6138623B2 (enrdf_load_stackoverflow) | ||
US4808542A (en) | Process for the stabilization of PN junctions | |
US6194257B1 (en) | Fabrication method of gate electrode having dual gate insulating film | |
JPH03129818A (ja) | 半導体装置の製造方法 | |
EP0293979A2 (en) | Zero bird-beak oxide isolation scheme for integrated circuits | |
US4397079A (en) | Process for improving the yield of integrated devices including Schottky barrier diodes | |
JPH025300B2 (enrdf_load_stackoverflow) | ||
US3860461A (en) | Method for fabricating semiconductor devices utilizing composite masking | |
JPH0370125A (ja) | 半導体装置の製造方法 | |
JPH025299B2 (enrdf_load_stackoverflow) | ||
US3969165A (en) | Simplified method of transistor manufacture | |
JPH0313745B2 (enrdf_load_stackoverflow) | ||
JP3013385B2 (ja) | 半導体装置の製造方法 | |
JPS6387741A (ja) | 半導体装置の製造方法 | |
JPH0126184B2 (enrdf_load_stackoverflow) | ||
JP3178444B2 (ja) | 半導体装置の製造方法 | |
KR0161727B1 (ko) | 반도체 소자의 소자분리방법 | |
JPS6041243A (ja) | 半導体装置の製造方法 | |
JPS5889861A (ja) | 半導体装置およびその製造方法 |