JPH0252426B2 - - Google Patents

Info

Publication number
JPH0252426B2
JPH0252426B2 JP61179126A JP17912686A JPH0252426B2 JP H0252426 B2 JPH0252426 B2 JP H0252426B2 JP 61179126 A JP61179126 A JP 61179126A JP 17912686 A JP17912686 A JP 17912686A JP H0252426 B2 JPH0252426 B2 JP H0252426B2
Authority
JP
Japan
Prior art keywords
region
type
terminal
substrate
well region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP61179126A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6336556A (ja
Inventor
Shinji Taguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP61179126A priority Critical patent/JPS6336556A/ja
Publication of JPS6336556A publication Critical patent/JPS6336556A/ja
Publication of JPH0252426B2 publication Critical patent/JPH0252426B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP61179126A 1986-07-30 1986-07-30 相補型ｍｏｓ半導体装置の保護回路 Granted JPS6336556A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61179126A JPS6336556A (ja) 1986-07-30 1986-07-30 相補型ｍｏｓ半導体装置の保護回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61179126A JPS6336556A (ja) 1986-07-30 1986-07-30 相補型ｍｏｓ半導体装置の保護回路

Publications (2)

Publication Number Publication Date
JPS6336556A JPS6336556A (ja) 1988-02-17
JPH0252426B2 true JPH0252426B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1990-11-13

Family

ID=16060446

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61179126A Granted JPS6336556A (ja) 1986-07-30 1986-07-30 相補型ｍｏｓ半導体装置の保護回路

Country Status (1)

Country Link
JP (1) JPS6336556A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6894351B2 (en) 2002-01-11 2005-05-17 Seiko Epson Corporation Semiconductor device for electrostatic protection

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6894351B2 (en) 2002-01-11 2005-05-17 Seiko Epson Corporation Semiconductor device for electrostatic protection

Also Published As

Publication number Publication date
JPS6336556A (ja) 1988-02-17

Similar Documents

Publication Publication Date Title
JP3246807B2 (ja) 半導体集積回路装置
JP3400215B2 (ja) 半導体装置
JP2959528B2 (ja) 保護回路
JP3320872B2 (ja) Ｃｍｏｓ集積回路装置
KR900001398B1 (ko) 양방성 입출력 셀
US6894320B2 (en) Input protection circuit
US6084272A (en) Electrostatic discharge protective circuit for semiconductor device
JPH044755B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPS63244874A (ja) 入力保護回路
JPH0252426B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPH02238668A (ja) 半導体装置
JPS5931987B2 (ja) 相補型ｍｏｓトランジスタ
US6229185B1 (en) CMOS integrated circuit for lessening latch-up susceptibility
JPH05315552A (ja) 半導体保護装置
JPS5931864B2 (ja) 相補型絶縁ゲ−ト半導体回路
JPH0532908B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPH0572110B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP2538621B2 (ja) Ｃｍｏｓ型集積回路装置
JPS6050062B2 (ja) 半導体集積回路装置
JP3036905B2 (ja) 相補型ｍｉｓ半導体装置
JPH0639455Y2 (ja) Ｍｏｓ素子の保護回路装置
JPH10125802A (ja) 保護素子を含む半導体回路装置
JPS61208863A (ja) Ｃｍｏｓ半導体装置
JPS5950557A (ja) 半導体装置
JPS6146987B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees