JPH025016B2 - - Google Patents

Info

Publication number
JPH025016B2
JPH025016B2 JP59104132A JP10413284A JPH025016B2 JP H025016 B2 JPH025016 B2 JP H025016B2 JP 59104132 A JP59104132 A JP 59104132A JP 10413284 A JP10413284 A JP 10413284A JP H025016 B2 JPH025016 B2 JP H025016B2
Authority
JP
Japan
Prior art keywords
layer
gate
anode
base region
thyristor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP59104132A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60247969A (ja
Inventor
Yutaka Kawamura
Kimihiro Muraoka
Yoshinobu Ootsubo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyo Electric Manufacturing Ltd
Original Assignee
Toyo Electric Manufacturing Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyo Electric Manufacturing Ltd filed Critical Toyo Electric Manufacturing Ltd
Priority to JP59104132A priority Critical patent/JPS60247969A/ja
Publication of JPS60247969A publication Critical patent/JPS60247969A/ja
Publication of JPH025016B2 publication Critical patent/JPH025016B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/211—Gated diodes
    • H10D12/212—Gated diodes having PN junction gates, e.g. field controlled diodes

Landscapes

  • Thyristors (AREA)
JP59104132A 1984-05-23 1984-05-23 自己消弧形半導体素子 Granted JPS60247969A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59104132A JPS60247969A (ja) 1984-05-23 1984-05-23 自己消弧形半導体素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59104132A JPS60247969A (ja) 1984-05-23 1984-05-23 自己消弧形半導体素子

Publications (2)

Publication Number Publication Date
JPS60247969A JPS60247969A (ja) 1985-12-07
JPH025016B2 true JPH025016B2 (enrdf_load_stackoverflow) 1990-01-31

Family

ID=14372580

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59104132A Granted JPS60247969A (ja) 1984-05-23 1984-05-23 自己消弧形半導体素子

Country Status (1)

Country Link
JP (1) JPS60247969A (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61198779A (ja) * 1985-02-28 1986-09-03 Res Dev Corp Of Japan 両面ゲ−ト静電誘導サイリスタ及びその製造方法
CH670528A5 (enrdf_load_stackoverflow) * 1986-03-20 1989-06-15 Bbc Brown Boveri & Cie
US4821083A (en) * 1986-09-30 1989-04-11 Kabushiki Kaisha Toshiba Thyristor drive system
US5132767A (en) * 1986-09-30 1992-07-21 Kabushiki Kaisha Toshiba Double gate GTO thyristor

Also Published As

Publication number Publication date
JPS60247969A (ja) 1985-12-07

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term