JPH0249734Y2 - - Google Patents
Info
- Publication number
- JPH0249734Y2 JPH0249734Y2 JP648186U JP648186U JPH0249734Y2 JP H0249734 Y2 JPH0249734 Y2 JP H0249734Y2 JP 648186 U JP648186 U JP 648186U JP 648186 U JP648186 U JP 648186U JP H0249734 Y2 JPH0249734 Y2 JP H0249734Y2
- Authority
- JP
- Japan
- Prior art keywords
- gate
- buried gate
- layer
- buried
- electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000012535 impurity Substances 0.000 claims description 13
- 230000006698 induction Effects 0.000 claims description 9
- 230000003068 static effect Effects 0.000 claims description 8
- 230000002093 peripheral effect Effects 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000370 acceptor Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Landscapes
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP648186U JPH0249734Y2 (enrdf_load_html_response) | 1986-01-22 | 1986-01-22 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP648186U JPH0249734Y2 (enrdf_load_html_response) | 1986-01-22 | 1986-01-22 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62120367U JPS62120367U (enrdf_load_html_response) | 1987-07-30 |
| JPH0249734Y2 true JPH0249734Y2 (enrdf_load_html_response) | 1990-12-27 |
Family
ID=30789032
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP648186U Expired JPH0249734Y2 (enrdf_load_html_response) | 1986-01-22 | 1986-01-22 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0249734Y2 (enrdf_load_html_response) |
-
1986
- 1986-01-22 JP JP648186U patent/JPH0249734Y2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62120367U (enrdf_load_html_response) | 1987-07-30 |
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