JPH0247037B2 - - Google Patents
Info
- Publication number
- JPH0247037B2 JPH0247037B2 JP58174082A JP17408283A JPH0247037B2 JP H0247037 B2 JPH0247037 B2 JP H0247037B2 JP 58174082 A JP58174082 A JP 58174082A JP 17408283 A JP17408283 A JP 17408283A JP H0247037 B2 JPH0247037 B2 JP H0247037B2
- Authority
- JP
- Japan
- Prior art keywords
- transistors
- bit line
- constant current
- transistor
- whose
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000001514 detection method Methods 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 8
- 230000003068 static effect Effects 0.000 claims description 4
- 238000010586 diagram Methods 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 2
- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58174082A JPS6066389A (ja) | 1983-09-22 | 1983-09-22 | 半導体記憶装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58174082A JPS6066389A (ja) | 1983-09-22 | 1983-09-22 | 半導体記憶装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6066389A JPS6066389A (ja) | 1985-04-16 |
| JPH0247037B2 true JPH0247037B2 (it) | 1990-10-18 |
Family
ID=15972332
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58174082A Granted JPS6066389A (ja) | 1983-09-22 | 1983-09-22 | 半導体記憶装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6066389A (it) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4703458A (en) * | 1985-12-16 | 1987-10-27 | Motorola, Inc. | Circuit for writing bipolar memory cells |
| EP0528799B1 (en) * | 1990-05-17 | 1994-12-21 | International Business Machines Corporation | Read/write/restore circuit for memory arrays |
| JP7360719B2 (ja) * | 2018-09-29 | 2023-10-13 | 株式会社フジキン | ダイヤフラムバルブ及び流量制御装置 |
-
1983
- 1983-09-22 JP JP58174082A patent/JPS6066389A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6066389A (ja) | 1985-04-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS6161198B2 (it) | ||
| JPS5846794B2 (ja) | メモリ・アレイ | |
| JPH0345478B2 (it) | ||
| JPS6028076B2 (ja) | 半導体メモリの書込み回路 | |
| JPH0247037B2 (it) | ||
| EP0130414A2 (en) | Directory memory | |
| US3821719A (en) | Semiconductor memory | |
| JPH08221990A (ja) | 半導体記憶装置 | |
| JPH034998B2 (it) | ||
| JP2548737B2 (ja) | ドライバ回路 | |
| JPS62129996A (ja) | 可変行励振を有するメモリセル | |
| US4697251A (en) | Bipolar RAM cell | |
| US4703458A (en) | Circuit for writing bipolar memory cells | |
| US4701882A (en) | Bipolar RAM cell | |
| JPH0442759B2 (it) | ||
| JPH0152834B2 (it) | ||
| JP3153400B2 (ja) | 半導体メモリ及びセンス回路 | |
| JPS61294686A (ja) | メモリ回路 | |
| JP2878036B2 (ja) | 半導体記憶装置 | |
| JP3022567B2 (ja) | 半導体記憶装置 | |
| RU2006967C1 (ru) | Элемент памяти | |
| JPS5827918B2 (ja) | メモリ・セル回路 | |
| JP2545502B2 (ja) | 記憶装置 | |
| JPS60237698A (ja) | 半導体回路 | |
| JPS6079772A (ja) | 半導体記憶装置 |