JPH023943A - Semiconductor integrated circuit device - Google Patents
Semiconductor integrated circuit deviceInfo
- Publication number
- JPH023943A JPH023943A JP63152811A JP15281188A JPH023943A JP H023943 A JPH023943 A JP H023943A JP 63152811 A JP63152811 A JP 63152811A JP 15281188 A JP15281188 A JP 15281188A JP H023943 A JPH023943 A JP H023943A
- Authority
- JP
- Japan
- Prior art keywords
- integrated circuit
- metal wiring
- bonding pad
- pad part
- bonding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 14
- 239000002184 metal Substances 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
- 230000001681 protective effect Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/0212—Auxiliary members for bonding areas, e.g. spacers
- H01L2224/02122—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
- H01L2224/02163—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body on the bonding area
- H01L2224/02165—Reinforcing structures
- H01L2224/02166—Collar structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05556—Shape in side view
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Local Oxidation Of Silicon (AREA)
- Wire Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体集積回路装置に関し、特にボンイング・
パッド部の構造に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to semiconductor integrated circuit devices, and particularly to bonding and
Regarding the structure of the pad section.
従来、半導体集積回路装置は、回路素子の金属配線上に
直接ボンディング・パッド部を形成するのが通常である
。Conventionally, in semiconductor integrated circuit devices, bonding pad portions are usually formed directly on metal wiring of circuit elements.
このように、従来の半導体集積回路装置は金属配線上に
直接ボンディング・パッド部が設けられるので、素子保
護膜の開口部とボンディング線の金属ボールとの間に生
じたすき間から外部からの水分の侵入がおこり、ボンデ
ィング・パッド部と金属配線との間を断線せしめること
がある。すなわち、集積回路装置の信頼性に重大な障害
を起こすのでその対策が望まれている。In this way, in conventional semiconductor integrated circuit devices, the bonding pad portion is provided directly on the metal wiring, so moisture can be absorbed from the outside through the gap created between the opening of the element protection film and the metal ball of the bonding line. Intrusion may occur and cause a disconnection between the bonding pad portion and the metal wiring. That is, since this causes a serious problem in the reliability of the integrated circuit device, countermeasures are desired.
本発明の目的は、上記の問題点に鑑み、外部からの水分
侵入によって金属配線と断線事故を生じることなきボン
ディング・パッド部を有する半導体集積回路装置を提供
することである。SUMMARY OF THE INVENTION In view of the above-mentioned problems, an object of the present invention is to provide a semiconductor integrated circuit device having a bonding pad portion that does not cause disconnection with metal wiring due to moisture intrusion from the outside.
本発明によれば、半導体集積回路装置は、半導体基板と
、前記半導体基板上に形成される集積回路素子と、前記
集積回路素子の全面を被覆する素子保護膜の開口部を介
し金属配線と接続するボンディング・パッド部とを備え
ることを含んで構成される。According to the present invention, a semiconductor integrated circuit device includes a semiconductor substrate, an integrated circuit element formed on the semiconductor substrate, and a metal wiring connected through an opening in an element protection film covering the entire surface of the integrated circuit element. and a bonding pad section.
次に本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第1図は本発明の一実施例を示す半導体集積回路装置の
ボンディング・バット部近傍の断面図である。本実施例
から明らかなように、本発明によれば、集積回路素子1
の全面を被覆する素子保護膜3の金属配M2上に開口部
4を明け、この開口部4を通じて集積回路素子1の金属
配線2と接続するようにボンディング・パッド部6を設
けた後、さらに素子保護膜3上を被覆する保護膜5をこ
のボンディング・パッド部6上で開口し、この開口部に
対しボンディング・ワイヤ7をボンディング接続したも
のである。FIG. 1 is a sectional view of the vicinity of a bonding butt portion of a semiconductor integrated circuit device showing an embodiment of the present invention. As is clear from this embodiment, according to the present invention, the integrated circuit element 1
An opening 4 is formed on the metal wiring M2 of the element protection film 3 covering the entire surface of the element, and a bonding pad part 6 is provided so as to be connected to the metal wiring 2 of the integrated circuit element 1 through this opening 4. A protective film 5 covering the element protective film 3 is opened above the bonding pad portion 6, and a bonding wire 7 is bonded to this opening.
このように、ホンディング パッド部6が新たに大きく
設けられるので、外部からの水分の侵入によりパッド部
6が点線で囲んだ部分で腐食しなとしても、下部の金属
配線2とボンディングワイヤ7との接続は保持される。In this way, since the bonding pad section 6 is newly provided with a larger size, even if the pad section 6 is not corroded in the area surrounded by the dotted line due to the intrusion of moisture from the outside, the lower metal wiring 2 and bonding wire 7 can be easily connected to each other. connection is maintained.
以上説明したように、本発明によれば、ボンデインク・
パッド部と集積回路素子とを保護膜をはさんで上下に接
続する構造がとられている為、外部からの水分の侵入に
よりボンディング・パッド部の周辺が腐食しても、集積
回路素子との接続に影響はなく、断線状態になることは
ない。従つ、て、半導体集積回路装置の信頼性を著しく
高め得る効果を存する。また、ボンディング・パッド部
を集積回路素子と同一平面上ではなく、その上部に配置
することができるので、チップ・サイズの縮小にも効果
をあげることができる。As explained above, according to the present invention, bonde ink and
Since the pad section and the integrated circuit element are connected vertically with a protective film in between, even if the periphery of the bonding pad section corrodes due to moisture intrusion from the outside, the connection between the integrated circuit element and the integrated circuit element remains intact. There is no effect on the connection and there is no disconnection. Therefore, there is an effect that the reliability of the semiconductor integrated circuit device can be significantly improved. Furthermore, since the bonding pad portion can be placed on top of the integrated circuit element rather than on the same plane, it is also possible to reduce the chip size.
第1図は本発明の一実施例を示す半導体集積回路装置の
ホンディング・パッド部近傍の断面図である。
1・・・!A積回路累子、2・・・金属配線、3・・・
素子保護膜、4・・・開口部、5・・・保護膜、6・・
・ボンディング・パッド部、7・・・ボンディング・ワ
イヤ。FIG. 1 is a cross-sectional view of the vicinity of a bonding pad portion of a semiconductor integrated circuit device showing one embodiment of the present invention. 1...! A product circuit cue, 2...metal wiring, 3...
Element protective film, 4... Opening, 5... Protective film, 6...
- Bonding pad section, 7... bonding wire.
Claims (1)
素子と、前記集積回路素子の全面を被覆する素子保護膜
の開口部を介し金属配線と接続するボンディング・パッ
ド部とを備えることを特徴とする半導体集積回路装置。A semiconductor substrate, an integrated circuit element formed on the semiconductor substrate, and a bonding pad portion connected to metal wiring through an opening in an element protection film covering the entire surface of the integrated circuit element. Semiconductor integrated circuit device.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63152811A JPH023943A (en) | 1988-06-20 | 1988-06-20 | Semiconductor integrated circuit device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63152811A JPH023943A (en) | 1988-06-20 | 1988-06-20 | Semiconductor integrated circuit device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH023943A true JPH023943A (en) | 1990-01-09 |
Family
ID=15548670
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP63152811A Pending JPH023943A (en) | 1988-06-20 | 1988-06-20 | Semiconductor integrated circuit device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH023943A (en) |
-
1988
- 1988-06-20 JP JP63152811A patent/JPH023943A/en active Pending
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