JPH04130742A - Integrated circuit device - Google Patents

Integrated circuit device

Info

Publication number
JPH04130742A
JPH04130742A JP2252666A JP25266690A JPH04130742A JP H04130742 A JPH04130742 A JP H04130742A JP 2252666 A JP2252666 A JP 2252666A JP 25266690 A JP25266690 A JP 25266690A JP H04130742 A JPH04130742 A JP H04130742A
Authority
JP
Japan
Prior art keywords
conductor layer
metal conductor
protective film
bonding pad
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2252666A
Other languages
Japanese (ja)
Inventor
Ichiro Kitao
北尾　一郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC IC Microcomputer Systems Co Ltd
Original Assignee
NEC IC Microcomputer Systems Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC IC Microcomputer Systems Co Ltd filed Critical NEC IC Microcomputer Systems Co Ltd
Priority to JP2252666A priority Critical patent/JPH04130742A/en
Publication of JPH04130742A publication Critical patent/JPH04130742A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/0212—Auxiliary members for bonding areas, e.g. spacers
    • H01L2224/02122—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
    • H01L2224/02163—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body on the bonding area
    • H01L2224/02165—Reinforcing structures
    • H01L2224/02166—Collar structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4845—Details of ball bonds
    • H01L2224/48451—Shape
    • H01L2224/48453—Shape of the interface with the bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To offer an integrated circuit device in which a metal conductor layer and a metal ball are not cut and whose reliability is high by a method wherein a thin protective film having an opening part is formed on a bonding pad part of the metal conductor layer. CONSTITUTION:A metal conductor layer 1 is formed on an interlayer insulating layer 5. Then, the whole surface of the interlayer insulating film 5 is covered with a protective film 2; and an opening is made on the bonding pad part of the metal conductor layer 1. Then, the whole surface on it is covered with a thin protective film 3; and an opening part which is smaller than that in the protective film 2 is formed near the central part of the bonding pad part of the metal conductor layer 1. In addition, a metal ball 6 and the bonding pad part of the metal conductor layer 1 are bonded and connected near the central part so as to sandwich the thin protective film 3 at the circumference. By using a structure in which the metal ball and the bonding pad part of the metal conductor layer are connected in the upper part and the lower part so as to sandwich the thin protective film, it is possible to prevent moisture from creeping in from the outside. As a result, the reliability of an integrated circuit can be increased.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は集積回路装置に関し、特に金属導体層のボンデ
ィングパッド部の構造を改良した集積回路装置に関する
。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an integrated circuit device, and more particularly to an integrated circuit device in which the structure of a bonding pad portion of a metal conductor layer is improved.

〔従来の技術〕[Conventional technology]

従来、集積回路装置は、第２図に示すように、金属導体
層１のボンディングパッド部上に直接ボンディングワイ
ヤ４が金属ボール６を形成しボンディング接続しである
のが通常である。Conventionally, in an integrated circuit device, as shown in FIG. 2, a bonding wire 4 forms a metal ball 6 directly on a bonding pad portion of a metal conductor layer 1 for bonding connection.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

上述した従来の集積回路装置は、金属導体層１のボンデ
ィングパッド部上において、保護膜２の開口部とボンデ
ィングワイヤ４の金属ボール６との間に生じたすき間か
ら外部からの水分の侵入がおこり、金属導体層１と金属
ボール６との間を切断され、集積回路の信頼性に関する
障害となっている。In the conventional integrated circuit device described above, moisture enters from the outside through the gap created between the opening of the protective film 2 and the metal ball 6 of the bonding wire 4 on the bonding pad portion of the metal conductor layer 1. , a disconnection occurs between the metal conductor layer 1 and the metal ball 6, which poses an obstacle to the reliability of the integrated circuit.

本発明の目的は、金属導体層と金属ボールとの切断がな
く、信頼性の高い集積回路装置を提供することにある。An object of the present invention is to provide a highly reliable integrated circuit device in which there is no disconnection between a metal conductor layer and a metal ball.

〔課題を解決するための手段〕[Means to solve the problem]

本発明は、層間絶縁膜と該層間絶縁上に形成された保護
膜と該保護膜から露出した金属導体層のボンディングパ
ッド部と該金属導体層のボンディングパッド部にボンデ
ィング接続するポンデイ〉グワイヤとを有する集積回路
装置において、露ａした前記金属導体層のボンディング
パッド部上番：開ロ部のある薄い保護膜が設けられてい
る。The present invention provides an interlayer insulation film, a protective film formed on the interlayer insulation, a bonding pad portion of a metal conductor layer exposed from the protective film, and a bonding wire bonded to the bonding pad portion of the metal conductor layer. In the integrated circuit device having the above-described structure, a thin protective film having an opening at the top and bottom of the exposed bonding pad portion of the metal conductor layer is provided.

〔実施例〕〔Example〕

次に、本発明の実施例について図面を参照して説明する
。Next, embodiments of the present invention will be described with reference to the drawings.

第１図は本発明の一実施例の要部断面図で夕る。FIG. 1 is a sectional view of a main part of an embodiment of the present invention.

第１図に示すように、まず、眉間絶縁膜５上に金属導体
層１を形成する。As shown in FIG. 1, first, a metal conductor layer 1 is formed on the glabellar insulating film 5. As shown in FIG.

次に、眉間絶縁膜５上の全面を保護膜２で被再し、金属
導体層１のボンディングパッド部上で一口する。Next, the entire surface of the glabella insulating film 5 is covered with a protective film 2, and the bonding pad portion of the metal conductor layer 1 is covered with a sip.

次に、その上の全面を薄い保護３で被覆し、嬢属導体層
ｌのボンディングパッド部の中央部近づで保護膜２より
も小さい開口部を形成する。Next, the entire surface thereof is covered with a thin protection film 3, and an opening smaller than the protection film 2 is formed near the center of the bonding pad portion of the metal conductor layer l.

さらに、周囲に薄い保護膜３をはさみ、中央側近傍で金
属ボール６と金属導体層１のボンディングパッド部をボ
ンディングにより接続する。Furthermore, a thin protective film 3 is sandwiched around the periphery, and the metal ball 6 and the bonding pad portion of the metal conductor layer 1 are connected by bonding near the center.

〔発明の効果〕 以上説明したように本発明は、金属ボールと金属導体層
のボンディングパッド部を薄い保護膜をはさんで上下に
接続する構造の為、外部からの水分の侵入を防ぐことが
できるので集Ｎ回路の信頼性を高めることができるとい
う効果がある。[Effects of the Invention] As explained above, the present invention has a structure in which the metal ball and the bonding pad portion of the metal conductor layer are connected vertically with a thin protective film in between, so that it is possible to prevent moisture from entering from the outside. This has the effect of increasing the reliability of the N-concentrator circuit.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は、本発明の一実施例の要部断面図、第２図は従
来の集積回路装置の一例の要部断面図である。 １・・・金属導体層、２・・・保護膜、３・・・薄い保
護膜、４・・・ボンディングワイヤ、５・・・層間絶縁
膜、６・・・金属ボール。FIG. 1 is a sectional view of a main part of an embodiment of the present invention, and FIG. 2 is a sectional view of a main part of an example of a conventional integrated circuit device. DESCRIPTION OF SYMBOLS 1... Metal conductor layer, 2... Protective film, 3... Thin protective film, 4... Bonding wire, 5... Interlayer insulating film, 6... Metal ball.

Claims (1)

【特許請求の範囲】[Claims] 　層間絶縁膜と該層間絶縁上に形成された保護膜と該保
護膜から露出した金属導体層のボンディングパッド部と
該金属導体層のボンディングパッド部にボンディング接
続するボンディングワイヤとを有する集積回路装置にお
いて、露出した前記金属導体層のボンディングパッド部
上に開口部のある薄い保護膜を設けたことを特徴とする
集積回路装置。An integrated circuit device comprising an interlayer insulating film, a protective film formed on the interlayer insulating film, a bonding pad portion of a metal conductor layer exposed from the protective film, and a bonding wire bonded to the bonding pad portion of the metal conductor layer. . An integrated circuit device, characterized in that a thin protective film having an opening is provided on the exposed bonding pad portion of the metal conductor layer.
JP2252666A 1990-09-21 1990-09-21 Integrated circuit device Pending JPH04130742A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2252666A JPH04130742A (en) 1990-09-21 1990-09-21 Integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2252666A JPH04130742A (en) 1990-09-21 1990-09-21 Integrated circuit device

Publications (1)

Publication Number Publication Date
JPH04130742A true JPH04130742A (en) 1992-05-01

Family

ID=17240542

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2252666A Pending JPH04130742A (en) 1990-09-21 1990-09-21 Integrated circuit device

Country Status (1)

Country Link
JP (1) JPH04130742A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017034192A (en) * 2015-08-05 2017-02-09 株式会社東芝 Semiconductor device and method of manufacturing the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017034192A (en) * 2015-08-05 2017-02-09 株式会社東芝 Semiconductor device and method of manufacturing the same

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