JPH0235470B2 - - Google Patents

Info

Publication number
JPH0235470B2
JPH0235470B2 JP57040552A JP4055282A JPH0235470B2 JP H0235470 B2 JPH0235470 B2 JP H0235470B2 JP 57040552 A JP57040552 A JP 57040552A JP 4055282 A JP4055282 A JP 4055282A JP H0235470 B2 JPH0235470 B2 JP H0235470B2
Authority
JP
Japan
Prior art keywords
region
conductivity type
collector
type
impurity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57040552A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57164562A (en
Inventor
Hiroshi Yoshida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP57040552A priority Critical patent/JPS57164562A/ja
Publication of JPS57164562A publication Critical patent/JPS57164562A/ja
Publication of JPH0235470B2 publication Critical patent/JPH0235470B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/63—Combinations of vertical and lateral BJTs

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP57040552A 1982-03-15 1982-03-15 Semiconductor device Granted JPS57164562A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57040552A JPS57164562A (en) 1982-03-15 1982-03-15 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57040552A JPS57164562A (en) 1982-03-15 1982-03-15 Semiconductor device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP4311172A Division JPS5739059B2 (enrdf_load_stackoverflow) 1972-04-28 1972-04-28

Publications (2)

Publication Number Publication Date
JPS57164562A JPS57164562A (en) 1982-10-09
JPH0235470B2 true JPH0235470B2 (enrdf_load_stackoverflow) 1990-08-10

Family

ID=12583609

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57040552A Granted JPS57164562A (en) 1982-03-15 1982-03-15 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57164562A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS632379A (ja) * 1986-06-20 1988-01-07 Sanyo Electric Co Ltd 縦型ｐｎｐトランジスタの製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5739059B2 (enrdf_load_stackoverflow) * 1972-04-28 1982-08-19

Also Published As

Publication number Publication date
JPS57164562A (en) 1982-10-09

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