JPH023493B2 - - Google Patents

Info

Publication number
JPH023493B2
JPH023493B2 JP56150523A JP15052381A JPH023493B2 JP H023493 B2 JPH023493 B2 JP H023493B2 JP 56150523 A JP56150523 A JP 56150523A JP 15052381 A JP15052381 A JP 15052381A JP H023493 B2 JPH023493 B2 JP H023493B2
Authority
JP
Japan
Prior art keywords
weight
film
methyl
negative
methacrylate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56150523A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5852634A (ja
Inventor
Hisashi Nakane
Akira Yokota
Wataru Kanai
Koichiro Hashimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Ohka Kogyo Co Ltd
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Priority to JP15052381A priority Critical patent/JPS5852634A/ja
Publication of JPS5852634A publication Critical patent/JPS5852634A/ja
Publication of JPH023493B2 publication Critical patent/JPH023493B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/008—Azides
    • G03F7/012—Macromolecular azides; Macromolecular additives, e.g. binders
    • G03F7/0125—Macromolecular azides; Macromolecular additives, e.g. binders characterised by the polymeric binder or the macromolecular additives other than the macromolecular azides

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
JP15052381A 1981-09-25 1981-09-25 ネガ型微細パターン形成方法 Granted JPS5852634A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15052381A JPS5852634A (ja) 1981-09-25 1981-09-25 ネガ型微細パターン形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15052381A JPS5852634A (ja) 1981-09-25 1981-09-25 ネガ型微細パターン形成方法

Publications (2)

Publication Number Publication Date
JPS5852634A JPS5852634A (ja) 1983-03-28
JPH023493B2 true JPH023493B2 (OSRAM) 1990-01-23

Family

ID=15498721

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15052381A Granted JPS5852634A (ja) 1981-09-25 1981-09-25 ネガ型微細パターン形成方法

Country Status (1)

Country Link
JP (1) JPS5852634A (OSRAM)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS609795B2 (ja) * 1980-12-11 1985-03-13 株式会社林原生物化学研究所 ヒト上皮細胞成長因子の製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52128132A (en) * 1976-04-20 1977-10-27 Fujitsu Ltd Positive type electron beam sensitive composition
JPS6048023B2 (ja) * 1979-09-05 1985-10-24 富士通株式会社 ポジ型レジスト
JPS5744143A (en) * 1980-08-29 1982-03-12 Tokyo Ohka Kogyo Co Ltd Composition and method for forming micropattern

Also Published As

Publication number Publication date
JPS5852634A (ja) 1983-03-28

Similar Documents

Publication Publication Date Title
US6319655B1 (en) Modification of 193 nm sensitive photoresist materials by electron beam exposure
US5250375A (en) Photostructuring process
JP3290194B2 (ja) フォトレジスト
JPH0220869A (ja) 乾式現像用レジスト
WO2008047719A1 (fr) Procede de formation de motif miniaturise et solution de traitement de substrat de reserve mise en œuvre dans ce procede
CN100385622C (zh) 精细图形的形成方法
JPH07261393A (ja) ネガ型レジスト組成物
US5384220A (en) Production of photolithographic structures
US4401745A (en) Composition and process for ultra-fine pattern formation
US6340556B1 (en) Tailoring of linewidth through electron beam post exposure
JPS6324248A (ja) フォトレジスト層中にポジパタ−ンを形成する方法
JPH0128368B2 (OSRAM)
JPH0722156B2 (ja) 半導体デバイスのパタ−ン形成方法
US4701342A (en) Negative resist with oxygen plasma resistance
JPH01154050A (ja) パターン形成方法
JP2000512394A (ja) アミノクロマチック発色性材料の金属イオンを低減する方法及びこれをフォトレジスト用の金属を少ししか含まない底部反射防止膜材料の合成に使用する方法
JP2901044B2 (ja) 三層レジスト法によるパターン形成方法
EP0244572B1 (en) Capped two-layer resist process
JPH023493B2 (OSRAM)
JPH0456973B2 (OSRAM)
JPS5979249A (ja) パタ−ン形成方法
JPH0334053B2 (OSRAM)
JPS62226148A (ja) パタ−ン形成方法
JPS61260242A (ja) レジストパタ−ンの形成方法
JPH01154047A (ja) 感光性組成物