JPH0234428B2 - - Google Patents
Info
- Publication number
- JPH0234428B2 JPH0234428B2 JP58104662A JP10466283A JPH0234428B2 JP H0234428 B2 JPH0234428 B2 JP H0234428B2 JP 58104662 A JP58104662 A JP 58104662A JP 10466283 A JP10466283 A JP 10466283A JP H0234428 B2 JPH0234428 B2 JP H0234428B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- ion
- mass separation
- ion implantation
- magnet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58104662A JPS59230242A (ja) | 1983-06-10 | 1983-06-10 | イオン打込装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58104662A JPS59230242A (ja) | 1983-06-10 | 1983-06-10 | イオン打込装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59230242A JPS59230242A (ja) | 1984-12-24 |
| JPH0234428B2 true JPH0234428B2 (enrdf_load_stackoverflow) | 1990-08-03 |
Family
ID=14386673
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58104662A Granted JPS59230242A (ja) | 1983-06-10 | 1983-06-10 | イオン打込装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59230242A (enrdf_load_stackoverflow) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62295347A (ja) * | 1986-04-09 | 1987-12-22 | イクリプス・イオン・テクノロジ−・インコ−ポレイテツド | イオンビ−ム高速平行走査装置 |
| US4804852A (en) * | 1987-01-29 | 1989-02-14 | Eaton Corporation | Treating work pieces with electro-magnetically scanned ion beams |
| US5350926A (en) * | 1993-03-11 | 1994-09-27 | Diamond Semiconductor Group, Inc. | Compact high current broad beam ion implanter |
| US5834786A (en) * | 1996-07-15 | 1998-11-10 | Diamond Semiconductor Group, Inc. | High current ribbon beam ion implanter |
| US7507978B2 (en) * | 2006-09-29 | 2009-03-24 | Axcelis Technologies, Inc. | Beam line architecture for ion implanter |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5678342U (enrdf_load_stackoverflow) * | 1979-11-13 | 1981-06-25 | ||
| JPS56156662A (en) * | 1980-05-02 | 1981-12-03 | Hitachi Ltd | Device for ion implantation |
-
1983
- 1983-06-10 JP JP58104662A patent/JPS59230242A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59230242A (ja) | 1984-12-24 |
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