JPS59230242A - イオン打込装置 - Google Patents

イオン打込装置

Info

Publication number
JPS59230242A
JPS59230242A JP58104662A JP10466283A JPS59230242A JP S59230242 A JPS59230242 A JP S59230242A JP 58104662 A JP58104662 A JP 58104662A JP 10466283 A JP10466283 A JP 10466283A JP S59230242 A JPS59230242 A JP S59230242A
Authority
JP
Japan
Prior art keywords
wafer
ion
ion implantation
magnetic field
mass separation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58104662A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0234428B2 (enrdf_load_stackoverflow
Inventor
Katsunobu Abe
安部　勝信
Takeshi Koike
武 小池
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP58104662A priority Critical patent/JPS59230242A/ja
Publication of JPS59230242A publication Critical patent/JPS59230242A/ja
Publication of JPH0234428B2 publication Critical patent/JPH0234428B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
JP58104662A 1983-06-10 1983-06-10 イオン打込装置 Granted JPS59230242A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58104662A JPS59230242A (ja) 1983-06-10 1983-06-10 イオン打込装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58104662A JPS59230242A (ja) 1983-06-10 1983-06-10 イオン打込装置

Publications (2)

Publication Number Publication Date
JPS59230242A true JPS59230242A (ja) 1984-12-24
JPH0234428B2 JPH0234428B2 (enrdf_load_stackoverflow) 1990-08-03

Family

ID=14386673

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58104662A Granted JPS59230242A (ja) 1983-06-10 1983-06-10 イオン打込装置

Country Status (1)

Country Link
JP (1) JPS59230242A (enrdf_load_stackoverflow)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4804852A (en) * 1987-01-29 1989-02-14 Eaton Corporation Treating work pieces with electro-magnetically scanned ion beams
US4922106A (en) * 1986-04-09 1990-05-01 Varian Associates, Inc. Ion beam scanning method and apparatus
EP0621628A1 (en) * 1993-03-11 1994-10-26 Diamond Semiconductor Group Inc. Ion implanter
US5834786A (en) * 1996-07-15 1998-11-10 Diamond Semiconductor Group, Inc. High current ribbon beam ion implanter
WO2008042094A3 (en) * 2006-09-29 2008-05-22 Axcelis Tech Inc New and improved beam line architecture for ion implanter

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5678342U (enrdf_load_stackoverflow) * 1979-11-13 1981-06-25
JPS56156662A (en) * 1980-05-02 1981-12-03 Hitachi Ltd Device for ion implantation

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5678342U (enrdf_load_stackoverflow) * 1979-11-13 1981-06-25
JPS56156662A (en) * 1980-05-02 1981-12-03 Hitachi Ltd Device for ion implantation

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4922106A (en) * 1986-04-09 1990-05-01 Varian Associates, Inc. Ion beam scanning method and apparatus
US4804852A (en) * 1987-01-29 1989-02-14 Eaton Corporation Treating work pieces with electro-magnetically scanned ion beams
EP0621628A1 (en) * 1993-03-11 1994-10-26 Diamond Semiconductor Group Inc. Ion implanter
US5834786A (en) * 1996-07-15 1998-11-10 Diamond Semiconductor Group, Inc. High current ribbon beam ion implanter
WO2008042094A3 (en) * 2006-09-29 2008-05-22 Axcelis Tech Inc New and improved beam line architecture for ion implanter
US7507978B2 (en) 2006-09-29 2009-03-24 Axcelis Technologies, Inc. Beam line architecture for ion implanter
JP2010505234A (ja) * 2006-09-29 2010-02-18 アクセリス テクノロジーズ， インコーポレイテッド イオン注入器のための改良型新規ビームラインアーキテクチャ
KR101354632B1 (ko) * 2006-09-29 2014-02-04 액셀리스 테크놀러지스, 인크. 이온 주입기를 위한 새롭고 향상된 빔 라인 구조

Also Published As

Publication number Publication date
JPH0234428B2 (enrdf_load_stackoverflow) 1990-08-03

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