JPH023295B2 - - Google Patents
Info
- Publication number
- JPH023295B2 JPH023295B2 JP57030293A JP3029382A JPH023295B2 JP H023295 B2 JPH023295 B2 JP H023295B2 JP 57030293 A JP57030293 A JP 57030293A JP 3029382 A JP3029382 A JP 3029382A JP H023295 B2 JPH023295 B2 JP H023295B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- threshold voltage
- fet
- etching
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30612—Etching of AIIIBV compounds
- H01L21/30621—Vapour phase etching
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57030293A JPS58147123A (ja) | 1982-02-26 | 1982-02-26 | 半導体層のエツチング処理方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57030293A JPS58147123A (ja) | 1982-02-26 | 1982-02-26 | 半導体層のエツチング処理方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58147123A JPS58147123A (ja) | 1983-09-01 |
| JPH023295B2 true JPH023295B2 (cs) | 1990-01-23 |
Family
ID=12299679
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57030293A Granted JPS58147123A (ja) | 1982-02-26 | 1982-02-26 | 半導体層のエツチング処理方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58147123A (cs) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02165641A (ja) * | 1988-12-20 | 1990-06-26 | Sanyo Electric Co Ltd | 電界効果トランジスタの製造方法 |
| US7494596B2 (en) | 2003-03-21 | 2009-02-24 | Hewlett-Packard Development Company, L.P. | Measurement of etching |
| CN109887872B (zh) * | 2019-03-29 | 2024-11-15 | 华南理工大学 | 用于制备凹槽栅增强型器件的精准刻蚀装置及其刻蚀方法 |
-
1982
- 1982-02-26 JP JP57030293A patent/JPS58147123A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58147123A (ja) | 1983-09-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4849368A (en) | Method of producing a two-dimensional electron gas semiconductor device | |
| US4635343A (en) | Method of manufacturing GaAs semiconductor device | |
| US4908325A (en) | Method of making heterojunction transistors with wide band-gap stop etch layer | |
| JPS6348196B2 (cs) | ||
| US5949095A (en) | Enhancement type MESFET | |
| US4264857A (en) | Constant voltage threshold device | |
| US6060402A (en) | Process for selective recess etching of epitaxial field effect transistors with a novel etch-stop layer | |
| KR20070053777A (ko) | 증가-공핍형 전계 효과 트랜지스터 구조 및 제조 방법 | |
| US4048648A (en) | High carrier velocity fet magnetic sensor | |
| US4466008A (en) | Field effect transistor | |
| JPH023295B2 (cs) | ||
| US20010024845A1 (en) | Process of manufacturing a semiconductor device including a buried channel field effect transistor | |
| EP0744773A2 (en) | Semiconductor device having a plasma-processed layer and the method of manufacturing the same | |
| US5219772A (en) | Method for making field effect devices with ultra-short gates | |
| US6504185B2 (en) | Compound semiconductor device and method for controlling characteristics of the same | |
| JP3223865B2 (ja) | 化合物半導体装置の製造プロセス評価方法およびプロセス評価パタン | |
| CA2311564A1 (en) | Inxga1-xp stop-etch layer for selective recess of gallium arsenide-based eptitaxial field effect transistors and process therefor | |
| JPH0436458B2 (cs) | ||
| KR890003416B1 (ko) | 반도체 장치 및 그의 제조방법 | |
| JPH05259192A (ja) | ヘテロ接合型電界効果トランジスタおよびその製造方法 | |
| JP3119168B2 (ja) | 半導体装置及びその製造方法 | |
| JPS59225571A (ja) | 電界効果トランジスタ | |
| JP2869112B2 (ja) | 半導体装置の製造方法 | |
| JP3064559B2 (ja) | 高電子移動度トランジスタの製造方法 | |
| JP2807290B2 (ja) | 半導体装置の製造方法 |