JPS58147123A - 半導体層のエツチング処理方法 - Google Patents

半導体層のエツチング処理方法

Info

Publication number
JPS58147123A
JPS58147123A JP57030293A JP3029382A JPS58147123A JP S58147123 A JPS58147123 A JP S58147123A JP 57030293 A JP57030293 A JP 57030293A JP 3029382 A JP3029382 A JP 3029382A JP S58147123 A JPS58147123 A JP S58147123A
Authority
JP
Japan
Prior art keywords
electrode
etching
active region
threshold voltage
source electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57030293A
Other languages
English (en)
Japanese (ja)
Other versions
JPH023295B2 (cs
Inventor
Yasumi Hikosaka
康己 彦坂
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57030293A priority Critical patent/JPS58147123A/ja
Publication of JPS58147123A publication Critical patent/JPS58147123A/ja
Publication of JPH023295B2 publication Critical patent/JPH023295B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30612—Etching of AIIIBV compounds
    • H01L21/30621—Vapour phase etching

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • ing And Chemical Polishing (AREA)
JP57030293A 1982-02-26 1982-02-26 半導体層のエツチング処理方法 Granted JPS58147123A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57030293A JPS58147123A (ja) 1982-02-26 1982-02-26 半導体層のエツチング処理方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57030293A JPS58147123A (ja) 1982-02-26 1982-02-26 半導体層のエツチング処理方法

Publications (2)

Publication Number Publication Date
JPS58147123A true JPS58147123A (ja) 1983-09-01
JPH023295B2 JPH023295B2 (cs) 1990-01-23

Family

ID=12299679

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57030293A Granted JPS58147123A (ja) 1982-02-26 1982-02-26 半導体層のエツチング処理方法

Country Status (1)

Country Link
JP (1) JPS58147123A (cs)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02165641A (ja) * 1988-12-20 1990-06-26 Sanyo Electric Co Ltd 電界効果トランジスタの製造方法
US7494596B2 (en) 2003-03-21 2009-02-24 Hewlett-Packard Development Company, L.P. Measurement of etching
JP2022528648A (ja) * 2019-03-29 2022-06-15 華南理工大学 リセスゲートエンハンスメントデバイスを製造するための高精度エッチング装置、及びそれを用いたエッチング方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02165641A (ja) * 1988-12-20 1990-06-26 Sanyo Electric Co Ltd 電界効果トランジスタの製造方法
US7494596B2 (en) 2003-03-21 2009-02-24 Hewlett-Packard Development Company, L.P. Measurement of etching
US8173032B2 (en) 2003-03-21 2012-05-08 Hewlett-Packard Development Company, L.P. Measurement of etching
JP2022528648A (ja) * 2019-03-29 2022-06-15 華南理工大学 リセスゲートエンハンスメントデバイスを製造するための高精度エッチング装置、及びそれを用いたエッチング方法

Also Published As

Publication number Publication date
JPH023295B2 (cs) 1990-01-23

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