JPH02311392A - 化合物半導体の結晶成長方法 - Google Patents

化合物半導体の結晶成長方法

Info

Publication number
JPH02311392A
JPH02311392A JP13325489A JP13325489A JPH02311392A JP H02311392 A JPH02311392 A JP H02311392A JP 13325489 A JP13325489 A JP 13325489A JP 13325489 A JP13325489 A JP 13325489A JP H02311392 A JPH02311392 A JP H02311392A
Authority
JP
Japan
Prior art keywords
crystal
chamber
vapor pressure
growth
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13325489A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0582357B2 (enrdf_load_stackoverflow
Inventor
Michihiro Sano
道宏 佐野
Hiroyuki Kato
裕幸 加藤
Yasuo Okuno
奥野 保男
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Stanley Electric Co Ltd
Original Assignee
Stanley Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Stanley Electric Co Ltd filed Critical Stanley Electric Co Ltd
Priority to JP13325489A priority Critical patent/JPH02311392A/ja
Publication of JPH02311392A publication Critical patent/JPH02311392A/ja
Publication of JPH0582357B2 publication Critical patent/JPH0582357B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP13325489A 1989-05-26 1989-05-26 化合物半導体の結晶成長方法 Granted JPH02311392A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13325489A JPH02311392A (ja) 1989-05-26 1989-05-26 化合物半導体の結晶成長方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13325489A JPH02311392A (ja) 1989-05-26 1989-05-26 化合物半導体の結晶成長方法

Publications (2)

Publication Number Publication Date
JPH02311392A true JPH02311392A (ja) 1990-12-26
JPH0582357B2 JPH0582357B2 (enrdf_load_stackoverflow) 1993-11-18

Family

ID=15100315

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13325489A Granted JPH02311392A (ja) 1989-05-26 1989-05-26 化合物半導体の結晶成長方法

Country Status (1)

Country Link
JP (1) JPH02311392A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5499600A (en) * 1993-12-24 1996-03-19 Stanley Electric Co., Ltd. Methods for compound semiconductor crystal growth from solution

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5499600A (en) * 1993-12-24 1996-03-19 Stanley Electric Co., Ltd. Methods for compound semiconductor crystal growth from solution

Also Published As

Publication number Publication date
JPH0582357B2 (enrdf_load_stackoverflow) 1993-11-18

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