JPH02295107A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPH02295107A JPH02295107A JP11631789A JP11631789A JPH02295107A JP H02295107 A JPH02295107 A JP H02295107A JP 11631789 A JP11631789 A JP 11631789A JP 11631789 A JP11631789 A JP 11631789A JP H02295107 A JPH02295107 A JP H02295107A
- Authority
- JP
- Japan
- Prior art keywords
- hmds
- wafer
- film
- photoresist
- photoresist film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 10
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 43
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 claims abstract description 34
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims abstract description 14
- 238000004528 spin coating Methods 0.000 claims abstract description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 10
- 229910052710 silicon Inorganic materials 0.000 abstract description 10
- 239000010703 silicon Substances 0.000 abstract description 10
- 230000005855 radiation Effects 0.000 abstract 3
- 235000012431 wafers Nutrition 0.000 description 29
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910001873 dinitrogen Inorganic materials 0.000 description 4
- 230000001678 irradiating effect Effects 0.000 description 4
- 229920003986 novolac Polymers 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 2
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- 239000008186 active pharmaceutical agent Substances 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000002052 molecular layer Substances 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
Landscapes
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体装置の製造方法に関し、特にフォトレジ
ス膜の形成方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for manufacturing a semiconductor device, and particularly to a method for forming a photoresist film.
従来、この種のフォトレジスト膜形成方法においては、
フォトレジストと半導体基板（以下ウ工ーハとよぶ）間
へのエッチング液の侵入を防止し、耐ウェットエッチン
グ性を向上させる目的で、ウェハーに対して枚葉式もし
くはバッチ式にてヘキサメチルジシラザン（以下ＨＭＤ
Ｓと記す）雰囲気中にさらす等の処理を行い、その後た
だちにフォトレジストを滴下し、ウェハー上にフォトレ
ジスト膜を形成する方法が用いられていた．
〔発明が解決しようとする課題〕
上述した従来のフォトレジスト膜の形成方法は、ウェハ
ーにＨＭＤＳ処理を行い、その後ただちにそのウェハー
上にフォトレジストを滴下し、フォトレジスト膜を形成
する方法となっているため、ウェハー上に過剰に付着し
たＨＭＤＳの成分は除去されることなく、ウェハーとフ
ォトレジスト膜との間に残ることになる。Conventionally, in this type of photoresist film forming method,
In order to prevent etching solution from entering between the photoresist and the semiconductor substrate (hereinafter referred to as wafer) and to improve wet etching resistance, wafers are treated with hexamethyl diethylene oxide in a single-wafer or batch process. Silazane (hereinafter referred to as HMD)
A method was used in which a photoresist film was formed on the wafer by performing a treatment such as exposing the wafer to an atmosphere (denoted as S), and then immediately dropping photoresist onto the wafer. [Problems to be Solved by the Invention] The conventional method for forming a photoresist film described above is a method in which a wafer is subjected to HMDS treatment, and then a photoresist is immediately dropped onto the wafer to form a photoresist film. Therefore, the HMDS components excessively attached to the wafer are not removed and remain between the wafer and the photoresist film.
ウェハー上に付着した過剰のＨＭＤＳの成分は、そのウ
エハーに対するフォトレジストの接触角を大きくし、フ
ォトレジスト膜とウェハーとの機械的な密着性を大幅に
低下させる効果がある。Excessive HMDS components deposited on the wafer have the effect of increasing the contact angle of the photoresist with the wafer and significantly reducing the mechanical adhesion between the photoresist film and the wafer.
そのため、通常のノボラック系ボジ形フォトレジストを
用いて、フォトレジスト膜を形成したウエハーを露光し
た場合、フォトレジスト膜内部から発生する窒素ガスに
より、機械的密着性の弱い部分のフォトレジストパター
ンの一部がウェハーから欠落するという欠点がある。特
に微細パターン形成に対しては、このようなパターンの
欠落は致命的である。Therefore, when a wafer on which a photoresist film is formed using a normal novolac-based positive photoresist is exposed to light, nitrogen gas generated from inside the photoresist film may damage the photoresist pattern in areas with weak mechanical adhesion. The disadvantage is that parts are missing from the wafer. Particularly for fine pattern formation, such pattern loss is fatal.
上述した従来のフォトレジスト膜形成方法に対し、本発
明はＨＭＤＳ処理を行ったウエハーに遠紫外（ＵＶ）光
を照射することによって、ウェハー上に過剰に付着した
ＨＭＤＳの成分を除去するため、単分子層に近いＨＭＤ
Ｓの成分がウェハー上に残る。その結果、ウェハーに対
するフォトレジストの接触角を一定にし、フォトレジス
ト膜とウェハーとの間の耐ウェットエッチング性を損な
うことなく、機械的な密着性を大幅に向上させたフォト
レジスト膜を形成することができる．このため通常のノ
ボラック系ボジ型フォトレジストを用いて、フォトレジ
スト膜を形成した基板を露光した場合、フォトレジスト
膜内部から発生する窒素ガスにより、機械的密着性の弱
い部分のフォトレジストパターンの一部がウェハーがら
欠落するのを防止することができる。In contrast to the conventional photoresist film forming method described above, the present invention uses a simple method to remove excessive HMDS components from the wafer by irradiating the HMDS-treated wafer with far ultraviolet (UV) light. HMD close to molecular layer
The S component remains on the wafer. As a result, the contact angle of the photoresist to the wafer is kept constant, and a photoresist film with significantly improved mechanical adhesion can be formed without impairing the wet etching resistance between the photoresist film and the wafer. Can be done. For this reason, when a substrate on which a photoresist film is formed is exposed using a normal novolak-based positive type photoresist, nitrogen gas generated from inside the photoresist film may cause parts of the photoresist pattern with weak mechanical adhesion to overlap. It is possible to prevent parts from falling off the wafer.
本発明の半導体装置の製造方法はＨＭＤＳ処理を行った
ウェハーにＵＶ光を照射することによって、ウェハー上
に過剰に付着しなＨＭＤＳの成分を除去し、単分子層に
近いＨＭＤＳの成分をウェハー上に残すものである。The method for manufacturing a semiconductor device of the present invention removes the HMDS component that is excessively attached to the wafer by irradiating the HMDS-treated wafer with UV light, and removes the HMDS component that is close to a monomolecular layer onto the wafer. This is what I will leave behind.
次に、本発明について図面を参照して説明する。第１図
（ａ）〜（ｃ）は本発明の一実施例を説明するための工
程順に示した半導体チップの断面図である。Next, the present invention will be explained with reference to the drawings. FIGS. 1(a) to 1(c) are cross-sectional views of a semiconductor chip shown in order of steps for explaining an embodiment of the present invention.
まず、第１図（ａ）に示すように、シリコン基板１をＨ
ＭＤＳ雰囲気中に約１分間さらし、表面にＨＭＤＳ膜２
を形成する。この時のＨＭＤＳ膜２は過剰のＨＭＤＳが
付着した状態にある。First, as shown in FIG. 1(a), the silicon substrate 1 is
Expose to MDS atmosphere for about 1 minute to form HMDS film 2 on the surface.
form. At this time, the HMDS film 2 is in a state where an excessive amount of HMDS is attached.
次に、第１図（ｂ）に示すように、ＨＭＤＳ膜２にＵＶ
光３を約１分間照射する，この照射により過剰に付着し
たＨＭＤＳはガスとなって除去されシリコン基板１の表
面には単分子層に近いＨＭＤＳ膜２が残る。Next, as shown in FIG. 1(b), the HMDS film 2 is exposed to UV light.
The light 3 is irradiated for about 1 minute. Due to this irradiation, the excessively attached HMDS is turned into gas and removed, leaving an HMDS film 2 close to a monomolecular layer on the surface of the silicon substrate 1.
以下第１図（ｃ）に示すように、回転塗布法によりフォ
トレジスト膜３を形成する。Thereafter, as shown in FIG. 1(c), a photoresist film 3 is formed by a spin coating method.
このように本実施例によれば、過剰のＨＭＤＳが除去さ
れるため、シリコン基板１に対するフォトレジストの接
触角は一定になり、フォトレジスト膜３とシリコン基板
１との間の耐ウエットエッチング性を損なうことなく、
機械的な密着性を大幅に向上させたフォトレジスト膜を
形成することができる。According to this embodiment, since excess HMDS is removed, the contact angle of the photoresist with respect to the silicon substrate 1 becomes constant, and the wet etching resistance between the photoresist film 3 and the silicon substrate 1 is improved. without damaging
A photoresist film with significantly improved mechanical adhesion can be formed.
このため、通常のノボラック系ボジ型フォトレジストを
用いて、フォトレジスト膜を形成した基板を露光した場
合、フォトレジスト膜内部から発生する窒素ガスにより
、機械的密着性の弱い部分のフォトレジストパターンの
一部が基板から欠落するのを防止することができる。For this reason, when a substrate on which a photoresist film is formed is exposed using a normal novolak-based positive type photoresist, nitrogen gas generated from inside the photoresist film may cause the photoresist pattern to deteriorate in areas with weak mechanical adhesion. It is possible to prevent a portion from falling off from the substrate.
なお、シリコン基板１をスピンモー夕にて回転させなが
ら、ＵＶ光を照射することによって過剰に付着したＨＭ
ＤＳを除去してもよい。この場合、シリコン基板面内で
より均一にＵＶ光を照射することができる。Note that by irradiating the silicon substrate 1 with UV light while rotating it in a spin mode, excessively attached HM is removed.
DS may be removed. In this case, UV light can be more uniformly irradiated within the silicon substrate surface.
以上説明したように本発明は、ＨＭＤＳ処理を行ったウ
ェハーにＵ■光を照射することによって、過剰に付着し
たＨＭＤＳの成分を除去できるため、単分子層に近いＨ
ＭＤＳの成分をウェハー上に残すことができる。その結
果、ウェハーに対するフォトレジストの接触角を一定に
し、フォトレジスト膜とウェハーとの間の耐ウエットエ
ッチング性を損なうことなく、機械的な密着性を大幅に
向上させたフォトレジスト膜を形成することができる。As explained above, in the present invention, by irradiating the HMDS-treated wafer with U light, the excessively attached HMDS component can be removed.
Components of the MDS can remain on the wafer. As a result, the contact angle of the photoresist to the wafer is kept constant, and a photoresist film with significantly improved mechanical adhesion can be formed without impairing the wet etching resistance between the photoresist film and the wafer. I can do it.
このため、通常のノボラック系ポジ型フォトレジストを
用いて、フォトレジスト膜を形成した基板を露光した場
合、フォトレジスト膜内部から発生する窒素ガスにより
、機械的密着性の弱い部分のフォトレジストパターンの
一部がウェハーから欠落するのを防止することができ、
ウェハー全面にわたって微細パターンを再現性良く形成
することができる。For this reason, when a substrate on which a photoresist film is formed is exposed using a normal novolak-based positive photoresist, nitrogen gas generated from inside the photoresist film may cause the photoresist pattern to deteriorate in areas with weak mechanical adhesion. It can prevent parts from falling off the wafer,
Fine patterns can be formed over the entire wafer with good reproducibility.
第１図（ａ）〜（ｃ）は本発明の一実施例を説明するた
めの半導体チップの断面図である。
１・・・シリコン基板、２・・・ＨＭＤＳ膜、３・・・
ＵＶ光、４・・・フォトレジスト膜。FIGS. 1(a) to 1(c) are cross-sectional views of a semiconductor chip for explaining one embodiment of the present invention. 1... Silicon substrate, 2... HMDS film, 3...
UV light, 4... photoresist film.
Claims (1)
のち回転塗布法によりフォトレジスト膜を形成する半導
体装置の製造方法において、ヘキサメチルジシラザン処
理を行った前記半導体基板表面に遠紫外光を照射するこ
とを特徴とする半導体装置の製造方法。In a method for manufacturing a semiconductor device in which a photoresist film is formed by a spin coating method after the surface of a semiconductor substrate is treated with hexamethyldisilazane, the surface of the semiconductor substrate treated with hexamethyldisilazane is irradiated with deep ultraviolet light. A method for manufacturing a semiconductor device, characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11631789A JPH02295107A (en) | 1989-05-09 | 1989-05-09 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11631789A JPH02295107A (en) | 1989-05-09 | 1989-05-09 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02295107A true JPH02295107A (en) | 1990-12-06 |
Family
ID=14683996
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11631789A Pending JPH02295107A (en) | 1989-05-09 | 1989-05-09 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02295107A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011066113A (en) * | 2009-09-16 | 2011-03-31 | Tokyo Electron Ltd | Hydrophobic treatment apparatus, hydrophobic treatment method, program, and computer storage medium |
| WO2012144286A1 (en) * | 2011-04-19 | 2012-10-26 | 東京エレクトロン株式会社 | Substrate processing method, computer memory medium, substrate processing device, and imprinting system |
-
1989
- 1989-05-09 JP JP11631789A patent/JPH02295107A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011066113A (en) * | 2009-09-16 | 2011-03-31 | Tokyo Electron Ltd | Hydrophobic treatment apparatus, hydrophobic treatment method, program, and computer storage medium |
| WO2012144286A1 (en) * | 2011-04-19 | 2012-10-26 | 東京エレクトロン株式会社 | Substrate processing method, computer memory medium, substrate processing device, and imprinting system |
| JP2012227319A (en) * | 2011-04-19 | 2012-11-15 | Tokyo Electron Ltd | Substrate processing method, program, computer storage medium, substrate processing apparatus and imprint system |
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