JP2011066113A - Hydrophobic treatment apparatus, hydrophobic treatment method, program, and computer storage medium - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To improve the throughput of a substrate treatment by efficiently performing a hydrophobic treatment on a surface of a substrate. <P>SOLUTION: A hydrophobic treatment apparatus 90 includes a placing table 120 on which a wafer W is mounted. A gas supply port 130 for supplying an HMDS gas to a surface of the wafer W is provided above the placing table 120. The gas supply port 130 is connected to a gas production device 131 which produces the HMDS gas through a gas supply pipe 132. A light irradiation portion 160 which irradiates HMDS on the wafer W with light to bring the HMDS into contact with the surface of the wafer W is provided obliquely above the placing table 120. An optical filter 161 which transmits only light of 250 to 2,500 nm in wavelength is disposed between the placing table 120 and the light irradiation part 160. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a hydrophobic treatment apparatus, a hydrophobic treatment method, a program, and a computer storage medium that perform a hydrophobic treatment on a surface of a substrate.

  For example, in the photolithography process in the manufacture of semiconductor devices, for example, a hydrophobization process for hydrophobizing the surface of a semiconductor wafer (hereinafter referred to as “wafer”), and a resist solution is applied to the hydrophobized wafer to form a resist film. A resist coating process, an exposure process for exposing a predetermined pattern on the resist film, a developing process for developing the exposed resist film, and the like are sequentially performed, so that a predetermined resist pattern is formed on the wafer.

  The hydrophobic treatment described above is performed to improve the adhesion between the wafer surface and the resist film, and is performed to change the hydrophilic wafer surface to hydrophobic. In such a hydrophobizing treatment, a hydrophobizing agent such as HMDS gas (hexamethyldisilazane gas) is supplied to the wafer surface to cause the wafer surface and HMDS to chemically react. That is, this chemical reaction replaces the hydroxyl group on the wafer surface with a trimethylsilanol group to make the wafer surface hydrophobic. Further, in order to promote a chemical reaction between the wafer surface and HMDS, a hydrophobic treatment is performed while heating the wafer (Patent Document 1 and Patent Document 2). The wafer is heated at 90 ° C., for example.

JP-A-5-102022 JP-A-5-171447

  As described above, in the photolithography process, the resist coating process is performed after the hydrophobic process of the wafer. In this resist coating process, in order to appropriately form a resist film on the wafer, the wafer is processed at a predetermined temperature, for example, 23 ° C.

  Therefore, it is necessary to adjust the temperature of the wafer before the resist coating process. However, since the wafer is heated in the conventional hydrophobization process, it takes time to adjust the temperature of the wafer. For this reason, even if the wafer was heated by the hydrophobization process to promote the chemical reaction, the throughput of the entire wafer process could not be improved.

  The present invention has been made in view of this point, and an object of the present invention is to efficiently perform a hydrophobic treatment on the surface of a substrate and improve the throughput of the substrate processing.

  In order to achieve the above object, the present invention provides a hydrophobizing apparatus for performing a hydrophobizing process on a surface of a substrate, and a hydrophobizing process on a surface of the substrate on which the substrate is mounted and the substrate on the mounting table. A treatment agent supply unit that supplies the agent, and a light irradiation unit that irradiates the hydrophobic treatment agent on the substrate with light to improve the adhesion between the surface of the substrate and the hydrophobic treatment agent. It is characterized by. The hydrophobic treatment agent of the present invention includes not only a gaseous treatment agent but also a mist or liquid treatment agent.

  When the inventors investigated, when the hydrophobic treatment agent on the substrate was irradiated with light, the chemical reaction between the surface of the substrate and the hydrophobic treatment agent was promoted, and the adhesion between the surface of the substrate and the hydrophobic treatment agent was promoted. Was found to improve. According to the present invention, since the hydrophobizing apparatus includes the light irradiation unit, the hydrophobizing process on the substrate is performed at least after supplying the hydrophobizing agent to the surface of the substrate or after supplying the hydrophobizing agent. The agent can be irradiated with light. For this reason, the hydrophobizing agent can be brought into close contact with the surface of the substrate in a short time, and the hydrophobizing treatment of the substrate can be efficiently performed in a short time. In addition, since it is not necessary to heat the substrate as in the prior art, the time for adjusting the temperature of the substrate performed after the hydrophobization treatment can be significantly shortened compared to the prior art. Therefore, the throughput of substrate processing can be improved.

  The wavelength of the light is preferably 350 nm to 2500 nm.

  The hydrophobic treatment device may include an optical filter that transmits only light having the wavelength.

  Moreover, the said hydrophobization processing apparatus may have the temperature control part which adjusts the temperature of the board | substrate on the said mounting base.

  The hydrophobizing agent may be hexamethyldisilazane.

  Another aspect of the present invention is a hydrophobic treatment method for performing a hydrophobic treatment on a surface of a substrate, and at least during the supply of the hydrophobic treatment agent to the surface of the substrate or after the supply of the hydrophobic treatment agent. The hydrophobic treatment agent is irradiated with light to improve the adhesion between the surface of the substrate and the hydrophobic treatment agent.

  The wavelength of the light is preferably 350 nm to 2500 nm.

  After stopping the light irradiation, the temperature of the substrate may be continuously adjusted without moving the substrate.

  The hydrophobizing agent may be hexamethyldisilazane.

  According to another aspect of the present invention, there is provided a program that runs on a computer of a control unit that controls the hydrophobizing apparatus in order to cause the hydrophobizing apparatus to execute the hydrophobizing method.

  According to another aspect of the present invention, a readable computer storage medium storing the program is provided.

  ADVANTAGE OF THE INVENTION According to this invention, the hydrophobic treatment of the surface of a board | substrate can be performed efficiently and the throughput of a board | substrate process can be improved.

It is a top view which shows the outline of a structure of the coating and developing processing system provided with the hydrophobization processing apparatus concerning this Embodiment. It is a front view of the coating and developing treatment system according to the present embodiment. It is a rear view of the coating and developing treatment system according to the present embodiment. It is a longitudinal cross-sectional view which shows the outline of a structure of the hydrophobization processing apparatus concerning this Embodiment. It is a longitudinal cross-sectional view which shows the outline of a structure of the hydrophobization processing apparatus concerning other embodiment.

  Embodiments of the present invention will be described below. FIG. 1 is a plan view showing an outline of a configuration of a coating and developing treatment system 1 including a hydrophobic treatment apparatus according to the present embodiment. FIG. 2 is a front view of the coating and developing treatment system 1, and FIG. 3 is a rear view of the coating and developing treatment system 1.

  As shown in FIG. 1, the coating and developing treatment system 1 is a cassette that carries, for example, 25 wafers W from the outside to the coating and developing treatment system 1 in a cassette unit, and carries a wafer W into and out of the cassette C. A station 2, a processing station 3 in which a plurality of various processing apparatuses for performing predetermined processing in a single wafer type in a photolithography process are arranged in multiple stages, and an exposure apparatus provided adjacent to the processing station 3 4 and the interface station 5 that transfers the wafer W to and from the unit 4.

  The cassette station 2 is provided with a cassette mounting table 6. The cassette mounting table 6 can mount a plurality of cassettes C in a row in the X direction (vertical direction in FIG. 1). The cassette station 2 is provided with a wafer transfer body 8 that can move in the X direction on the transfer path 7. The wafer carrier 8 is also movable in the wafer arrangement direction (Z direction; vertical direction) of the wafers W accommodated in the cassette C, and is selective to the wafers W in each cassette C arranged in the X direction. Can be accessed.

  The wafer carrier 8 is rotatable in the θ direction around the Z axis, and a temperature control device 60 belonging to a third processing device group G3 on the processing station 3 side described later, and a transition device 61 for delivering the wafer W. Can also be accessed.

  The processing station 3 adjacent to the cassette station 2 includes, for example, five processing device groups G1 to G5 in which a plurality of processing devices are arranged in multiple stages. A first processing device group G1 and a second processing device group G2 are sequentially arranged from the cassette station 2 side on the X direction negative direction (downward direction in FIG. 1) side of the processing station 3. A third processing device group G3, a fourth processing device group G4, and a fifth processing device group G5 are sequentially arranged from the cassette station 2 side on the X direction positive direction (upward direction in FIG. 1) side of the processing station 3. Has been placed. A first transfer device A1 is provided between the third processing device group G3 and the fourth processing device group G4, and the wafer W is supported and transferred inside the first transfer device A1. A first transfer arm 10 is provided. The first transfer arm 10 can selectively access each processing apparatus in the first processing apparatus group G1, the third processing apparatus group G3, and the fourth processing apparatus group G4 to transfer the wafer W. A second transfer device A2 is provided between the fourth processing device group G4 and the fifth processing device group G5, and the wafer W is supported and transferred inside the second transfer device A2. A second transfer arm 11 is provided. The second transfer arm 11 can selectively access each processing apparatus in the second processing apparatus group G2, the fourth processing apparatus group G4, and the fifth processing apparatus group G5 to transfer the wafer W.

  As shown in FIG. 2, in the first processing unit group G1, a liquid processing apparatus that performs processing by supplying a predetermined liquid to the wafer W, for example, resist coating apparatuses 20, 21, and 22 that apply a resist solution to the wafer W. Bottom coating devices 23 and 24 for forming an antireflection film for preventing reflection of light during the exposure process are stacked in five stages in order from the bottom. In the second processing unit group G2, liquid processing units, for example, development processing units 30 to 34 for supplying a developing solution to the wafer W and performing development processing are stacked in five stages in order from the bottom. In addition, chemical chambers 40 and 41 for supplying various processing liquids to the liquid processing apparatuses in the processing apparatus groups G1 and G2 are provided at the bottom of the first processing apparatus group G1 and the second processing apparatus group G2. Each is provided.

  As shown in FIG. 3, the third processing unit group G3 includes a temperature control unit 60, a transition unit 61, high-precision temperature control units 62 and 63 that control the temperature of the wafer W under high-precision temperature control, and the wafer W. High-temperature heat treatment apparatuses 64 to 67 that perform heat treatment at high temperatures are stacked in eight stages in order from the bottom.

  In the fourth processing unit group G4, pre-baking apparatuses 70 to 73 that heat-treat the wafer W after the resist coating process and post-baking apparatuses 74 to 77 that heat-process the wafer W after the development process are arranged in eight stages in order from the bottom. It is superimposed on.

  In the fifth processing apparatus group G5, a plurality of heat treatment apparatuses for heat-treating the wafer W, for example, high-precision temperature control apparatuses 80 to 82 and post-exposure baking apparatuses 83 to 87 are stacked in eight stages in order from the bottom.

  As shown in FIG. 1, a plurality of processing apparatuses are arranged on the positive side in the X direction of the first transfer apparatus A1, and a hydrophobic processing apparatus for hydrophobizing the wafer W as shown in FIG. 90, 91 and heating devices 92, 93 for heating the wafer W are stacked in four stages in order from the bottom. As shown in FIG. 1, a peripheral exposure device 94 that selectively exposes only the edge portion of the wafer W, for example, is disposed on the positive side in the X direction of the second transfer device A2.

  As shown in FIG. 1, the interface station 5 is provided with a wafer transfer body 101 that moves on a transfer path 100 that extends in the X direction, and a buffer cassette 102. The wafer transfer body 101 can move in the Z direction and can also rotate in the θ direction, and accesses the exposure apparatus 4 adjacent to the interface station 5, the buffer cassette 102, and the fifth processing apparatus group G5. The wafer W can be transferred.

  Next, the configuration of the above-described hydrophobizing apparatuses 90 and 91 will be described. As shown in FIG. 4, the hydrophobizing apparatus 90 includes a processing container 110 having a wafer W loading / unloading port (not shown) formed on a side surface.

  On the bottom surface in the processing container 110, a mounting table 120 on which the wafer W is mounted is provided. The wafer W is placed on the upper surface of the mounting table 120 so that the surface to be processed faces upward. In the mounting table 120, lifting pins 121 are provided for supporting the wafer W from below and lifting it. The raising / lowering pin 121 can be moved up and down by the raising / lowering drive part 122. A through hole 123 that penetrates the upper surface in the thickness direction is formed on the upper surface of the mounting table 120, and the elevating pin 121 is inserted through the through hole 123.

  A gas supply port 130 for supplying HMDS gas as a hydrophobizing agent to the wafer W is formed on the ceiling surface in the processing container 110 and above the mounting table 120. A gas supply pipe 132 communicating with the gas generator 131 is connected to the gas supply port 130. The gas supply pipe 132 is provided with a supply device group 133 including a valve for controlling the flow of the HMDS gas supplied from the gas generation device 131, a flow rate adjusting unit, and the like. In the present embodiment, the gas supply port 130, the gas generation device 131, the gas supply pipe 132, and the supply device group 133 constitute a gas supply unit as a processing agent supply unit.

  The gas generator 131 has a storage tank 140 in which a liquid HMDS liquid is stored. The gas supply pipe 132 described above is connected to the ceiling surface of the storage tank 140, that is, the gas phase portion of the storage tank 140. A side surface of the storage tank 140 is connected to a nitrogen gas supply source (not shown), and a nitrogen gas supply pipe 141 that supplies nitrogen gas into the storage tank 140 is connected. In the gas generator 131, the nitrogen gas is supplied into the storage tank 140 from the nitrogen gas supply pipe 141, whereby the HMDS liquid in the storage tank 140 is vaporized and HMDS gas is generated. The HMDS gas is supplied to the gas supply pipe 132 using the nitrogen gas as a carrier gas.

  An exhaust port 150 for exhausting the atmosphere inside the processing container 110 is formed on the bottom surface of the processing container 110. An exhaust pipe 151 is connected to the exhaust port 150. Note that an exhaust pump (not shown) that evacuates the atmosphere inside the processing container 110 may be connected to the exhaust pipe 151.

  A light irradiation unit 160 that irradiates light to the HMDS on the wafer W is provided on the ceiling surface in the processing container 110. For example, the light irradiation unit 160 is disposed at a position that does not interfere with the gas supply port 130 and that irradiates the entire surface of the wafer W on the mounting table 120 with light from obliquely above the mounting table 120. For the light irradiation unit 160, for example, a metal hydride lamp is used.

  An optical filter 161 that transmits only light having a predetermined wavelength is disposed between the mounting table 120 and the light irradiation unit 160. The optical filter 161 is disposed at a position through which all the light emitted from the light irradiation unit 160 passes. That is, the wafer W is irradiated with only light having a predetermined wavelength that has passed through the optical filter 161. Note that the optical filter 161 may be disposed on the light irradiation surface of the light irradiation unit 160.

  The predetermined wavelength of the light transmitted by the above-described optical filter 161 is, for example, 350 nm to 2500 nm. As a result of investigations by the inventors, when the HMDS on the wafer W is irradiated with light having such a wavelength for a predetermined time, the surface of the wafer W and the active group of the HMDS molecule can be chemically bonded tightly and densely. It was found that the adhesion between the surface and HMDS was improved. That is, it was found that HMDS can be brought into close contact with the surface of the wafer W in a short time. Further, it was found that when the HMDS is irradiated with light having a wavelength shorter than 350 nm, the HMDS may be destroyed and the hydrophobicity of the surface of the wafer W may be impaired. Furthermore, it has been found that when HMDS on the wafer W is irradiated with light having a wavelength longer than 2500 nm, the wafer W may be heated. Therefore, the predetermined wavelength of light is set to 350 nm to 2500 nm as described above. The optical filter 161 may be formed by overlapping a filter that blocks light having a wavelength shorter than 350 nm and a filter that blocks light having a wavelength longer than 2500 nm.

  The configuration of the hydrophobizing apparatus 91 is the same as that of the hydrophobizing apparatus 90 described above, and a description thereof will be omitted.

  The coating and developing treatment system 1 is provided with a control unit 200 as shown in FIG. The control unit 200 is a computer, for example, and has a program storage unit (not shown). The program storage unit stores a program for executing the hydrophobic processing of the wafer W in the hydrophobic processing apparatuses 90 and 91. In addition to this, the program storage unit controls the transfer of the wafer W between the cassette station 2, the processing station 3, the exposure apparatus 4, and the interface station 5, the operation of the drive system in the processing station 3, and the like. A program for executing wafer processing in the development processing system 1 is stored. This program is recorded on a computer-readable storage medium H such as a computer-readable hard disk (HD), flexible disk (FD), compact disk (CD), magnetic optical desk (MO), or memory card. May have been installed in the control unit 200 from the storage medium H.

  The coating and developing treatment system 1 according to the present embodiment is configured as described above. Next, wafer processing performed in the coating and developing processing system 1 will be described.

  First, one wafer W is taken out from the cassette C on the cassette mounting table 6 by the wafer transfer body 8 and transferred to the temperature adjustment device 60 of the third processing unit group G3. The wafer W transferred to the temperature adjusting device 60 is adjusted to a predetermined temperature. Thereafter, the wafer W is transferred to the bottom coating device 23 by the first transfer device A1, and an antireflection film is formed on the wafer W. The wafer W on which the antireflection film is formed is sequentially transferred to the heating device 92 and the high-accuracy temperature adjusting device 62 by the first transfer device A1, and subjected to predetermined processing in each device. Thereafter, the wafer W is transferred to the hydrophobic treatment apparatus 90 by the first transfer apparatus A1.

  The wafer W carried into the hydrophobizing apparatus 90 is transferred to the lift pins 121 and placed on the mounting table 120. Thereafter, the supply device group 133 supplies HMDS gas from the gas supply port 130 to the wafer W on the mounting table 120. During the supply of the HMDS gas, light is irradiated from the light irradiation unit 160 to the wafer W on the mounting table 120. Of the irradiated light, light having a wavelength shorter than 350 nm and light having a wavelength longer than 2500 nm are blocked by the optical filter 161. Then, only light having a wavelength of 350 nm to 2500 nm passes through the optical filter 161 and is applied to the HMDS on the wafer W. When light is irradiated for a predetermined time, the HMDS chemically reacts with the surface of the wafer W, and the HMDS adheres to the surface of the wafer W. By this chemical reaction, the hydroxyl group on the surface of the wafer W is substituted with a trimethylsilanol group, and the surface of the wafer W is hydrophobized. During the hydrophobic treatment of the wafer W, the atmosphere inside the processing container 110 is exhausted from the exhaust port 150.

  Thereafter, the wafer W is transferred to the high-precision temperature controller 63 by the first transfer device A1, and the temperature is adjusted to a predetermined temperature, for example, 23 ° C. At this time, since the wafer W is not heated in the hydrophobic treatment apparatus 90, the wafer W can be adjusted to a predetermined temperature in a very short time.

  Thereafter, the wafer W is transferred to the resist coating apparatus 20 by the first transfer apparatus A1, and a resist film is formed on the wafer W. The wafer W on which the resist film is formed is transferred to the pre-baking device 70 by the first transfer device A1 and subjected to heat treatment. Subsequently, the wafer is sequentially transported to the peripheral exposure device 94 and the high-precision temperature control device 82 by the second transport device A2, and predetermined processing is performed in each device. Thereafter, the wafer W is transferred to the exposure apparatus 4 by the wafer transfer body 101 of the interface station 5, and a predetermined pattern is exposed on the resist film on the wafer W. The wafer W for which the exposure process has been completed is transferred to the post-exposure baking apparatus 83 by the wafer transfer body 101 and subjected to a predetermined process.

  When the heat treatment in the post-exposure baking apparatus 83 is completed, the wafer W is transferred to the high-accuracy temperature adjustment apparatus 81 by the second transfer apparatus A2, and the temperature is adjusted. Thereafter, the wafer W is transferred to the development processing apparatus 30 by the second transfer apparatus A2, and development processing is performed on the wafer W, so that a resist pattern is formed on the resist film. Thereafter, the wafer W is transferred to the post-baking device 74 by the second transfer device A2 and subjected to heat treatment, and then transferred to the high-precision temperature controller 63 by the first transfer device A1 and the temperature is adjusted. Then, the wafer W is transferred to the transition device 61 by the first transfer device A1, and returned to the cassette C by the wafer transfer body 8 to complete a series of photolithography steps.

  According to the above embodiment, since the HMDS on the wafer W is irradiated with light in the hydrophobizing apparatus 90, the chemical reaction between the surface of the wafer W and the HMDS is promoted, and the surface of the wafer W is Adhesiveness with HMDS can be improved. That is, HMDS can be brought into close contact with the surface of the wafer W in a short time, and the hydrophobic treatment of the wafer W can be performed efficiently in a short time. In addition, since the wavelength of the light applied to the HMDS on the wafer W is 2500 nm or less in this hydrophobic treatment, the wafer W is not heated. For this reason, the temperature adjustment of the wafer W performed after the hydrophobization treatment can be performed in an extremely short time. Therefore, the throughput of wafer processing in the coating and developing processing system 1 can be improved.

  In addition, since the wavelength of light applied to the HMDS on the wafer W is 350 nm or more in the hydrophobic treatment, the HMDS is not destroyed. Therefore, the wafer W can be appropriately hydrophobized.

  Furthermore, since light having a wavelength shorter than 350 nm is absorbed by the optical filter 161 in the hydrophobic treatment, it is possible to prevent ozone from being generated in the processing container 110 of the hydrophobic treatment apparatus 90.

  Further, since the light irradiation unit 160 of the hydrophobizing apparatus 90 can irradiate light to the HMDS on the entire surface of the wafer W by one irradiation, the hydrophobizing process of the wafer W can be performed quickly.

  In the hydrophobic treatment apparatus 90 of the above embodiment, as shown in FIG. 5, a temperature adjustment unit 210 that adjusts the temperature of the wafer W on the mounting table 120 may be provided. The temperature adjustment unit 210 is, for example, a flat plate shape, and is embedded in the upper surface of the mounting table 120. The temperature adjustment unit 210 includes, for example, a Peltier element and can set the wafer W to a predetermined temperature. Since the other configuration of the hydrophobizing apparatus 90 is the same as that of the above embodiment, the description thereof is omitted.

  In such a case, after the hydrophobic treatment is performed on the wafer W in the hydrophobic treatment apparatus 90, the temperature of the wafer W can be continuously adjusted to a predetermined temperature in the hydrophobic treatment apparatus 90. For this reason, it is not necessary to transfer the wafer W to the high-precision temperature control device 63 thereafter, and it can be directly transferred to the resist coating device 20. Therefore, the throughput of wafer processing in the coating and developing processing system 1 can be further improved. Further, since the hydrophobizing apparatus 90 has a function of adjusting the temperature of the wafer W in the high-accuracy temperature controller, some of the high-accuracy temperature controllers can be omitted, and the coating and developing treatment system 1 can be saved in space. You can also. In this case, the hydrophobizing apparatus 90 according to the present embodiment may be disposed in a place where the omitted high-accuracy temperature control apparatus is present.

  In the hydrophobic treatment apparatus 90 of the above embodiment, the light irradiation unit 160 and the optical filter 161 are disposed obliquely above the wafer W on the mounting table 120. However, the light irradiation unit 160 and the optical filter 161 are disposed. May be arranged so as to face the wafer W. In such a case, the light irradiation unit 160 and the optical filter 161 are arranged so as to cover the entire surface of the wafer W. Further, the gas supply port 130 is disposed at a position where the light irradiation unit 160 and the optical filter 161 do not interfere with each other, and the HMDS gas is uniformly supplied from the gas supply port 130 to the wafer W.

  In the hydrophobizing apparatus 90 of the above embodiment, the wafer W is mounted on the mounting table 120 and the HMDS on the wafer W is irradiated with light. However, the wafer W is rotated and the wafer W is rotating. The HMDS on the wafer W may be irradiated with light.

  In the hydrophobization process of the above embodiment, the light irradiation unit 160 irradiates light to the HMDS on the wafer W during the supply of the HMDS gas from the gas supply port 130 to the wafer W. Later, the light irradiation unit 160 may irradiate the HMDS of the wafer W with light. Further, the light irradiation unit 160 may irradiate light to the HMDS of the wafer W continuously during and after the supply of the HMDS gas to the wafer W. In any case, since the adhesion between the surface of the wafer W and the HMDS is improved by light irradiation, the hydrophobic treatment of the wafer W can be performed efficiently in a short time.

  In the hydrophobization process of the above embodiment, vaporized HMDS gas is supplied onto the wafer W. However, mist or liquid HMDS may be supplied onto the wafer W. Moreover, as a hydrophobization processing agent, it is not limited to HMDS, You may use another processing agent.

  In the above embodiment, the wafer W is transferred by the first transfer device A1 and the second transfer device A2 in the processing station 3. However, even if the wafer W is roller-transferred using a so-called flat flow type. Good. In such a case, the various processing apparatuses described above are arranged in the processing station 3 in the order in which the wafers W are processed. Then, the wafers W carried out from the cassette station 2 are sequentially transferred to these processing apparatuses by roller transfer. In each processing apparatus, a predetermined process is performed on the wafer W being transferred, and a series of photolithography processes are performed. In this case, since predetermined processing is performed during the transfer of the wafer W in each processing apparatus, the throughput of the wafer processing can be further improved.

  The preferred embodiments of the present invention have been described above with reference to the accompanying drawings, but the present invention is not limited to such examples. It is obvious for those skilled in the art that various changes or modifications can be conceived within the scope of the idea described in the claims, and these naturally belong to the technical scope of the present invention. It is understood. The present invention is not limited to this example and can take various forms. The present invention can also be applied to a case where the substrate is another substrate such as an FPD (flat panel display) other than a wafer or a mask reticle for a photomask.

  The present invention is useful when a hydrophobic treatment is performed on the surface of a substrate.

DESCRIPTION OF SYMBOLS 1 Coating | development processing system 90, 91 Hydrophobic processing apparatus 110 Processing container 120 Mounting stand 130 Gas supply port 131 Gas generation apparatus 132 Gas supply pipe 133 Supply equipment group 160 Light irradiation part 161 Optical filter 200 Control part 210 Temperature adjustment part W Wafer

Claims (11)

A hydrophobizing apparatus that performs a hydrophobizing process on the surface of a substrate,
A mounting table for mounting a substrate;
A treatment agent supply unit for supplying a hydrophobic treatment agent to the surface of the substrate on the mounting table;
A hydrophobizing apparatus comprising a light irradiation unit that irradiates the hydrophobizing agent on the substrate with light to improve adhesion between the surface of the substrate and the hydrophobizing agent. The hydrophobizing apparatus according to claim 1, wherein the wavelength of the light is 350 nm to 2500 nm. The hydrophobic treatment apparatus according to claim 2, further comprising an optical filter that transmits only light having the wavelength. The hydrophobizing apparatus according to claim 1, further comprising a temperature adjusting unit that adjusts the temperature of the substrate on the mounting table. The hydrophobizing treatment apparatus according to claim 1, wherein the hydrophobizing treatment agent is hexamethyldisilazane. A hydrophobic treatment method for performing a hydrophobic treatment on a surface of a substrate,
At least during the supply of the hydrophobic treatment agent to the surface of the substrate or after the supply of the hydrophobic treatment agent, the hydrophobic treatment agent on the substrate is irradiated with light so that the surface of the substrate and the hydrophobic treatment agent adhere to each other Hydrophobic treatment method characterized by improving the property. The hydrophobizing method according to claim 6, wherein the wavelength of the light is 350 nm to 2500 nm. 8. The hydrophobizing method according to claim 6, wherein after the light irradiation is stopped, the temperature of the substrate is continuously adjusted without moving the substrate. The hydrophobic treatment method according to any one of claims 6 to 8, wherein the hydrophobizing agent is hexamethyldisilazane. A program that operates on a computer of a control unit that controls the hydrophobizing apparatus in order to cause the hydrophobizing apparatus to execute the hydrophobizing process method according to claim 6. A readable computer storage medium storing the program according to claim 10.

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