JP2016046515A - Hydrophobic treatment method, hydrophobic treatment device, and recording medium for hydrophobic treatment - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a hydrophobic treatment method capable of sufficiently and stably imparting hydrophobicity expected according to a heat treatment temperature of a substrate to the substrate, a hydrophobic treatment device, and a recording medium.SOLUTION: A hydrophobic treatment method for hydrophobizing a surface of a substrate comprises the steps of: (A) supplying a process gas for hydrophobing to the surface of the substrate; (B) exposing the surface of the substrate to the atmosphere containing the process gas over a prescribed time; and (C) heating the substrate in the presence of the process gas after the step (B).SELECTED DRAWING: Figure 5

Description

  The present invention relates to a method, an apparatus, and a recording medium for hydrophobizing the surface of a substrate.

  The process for manufacturing a semiconductor includes a step of forming a resist pattern for etching on the surface of a wafer (substrate). The resist pattern is formed by exposing and developing a resist film formed on the surface of the substrate. In order to prevent peeling or falling of the resist pattern, the resist film needs to be in close contact with the surface of the substrate. In order to ensure high adhesion between the resist film and the substrate, the wafer surface is subjected to a hydrophobic treatment before the resist film is formed.

HMDS (hexamethyldisilazane, (CH ₃ ) ₃ SiNHSi (CH ₃ ) ₃ ) is known as a compound for hydrophobizing the substrate surface. According to Patent Document 1, in response to the problem of reducing the variation in hydrophobicity in the substrate surface, when the substrate is hydrophobized, the HMDS gas is intermittently supplied into the hermetic container so that the gas is supplied. It is disclosed that the temperature of the portion of the substrate that is exposed to gas is suppressed from becoming extremely low, thereby solving the above problem. In paragraph [0008] of Patent Document 1, it is described that “the HMDS gas introduced into the hermetic container is lower than the temperature of the wafer W”, and in paragraph [0009], “in the hydrophobization treatment using HMDS gas, “The higher the temperature of the wafer W during processing, the higher the hydrophobicity of the wafer surface”.

  Patent Document 2 discloses a problem that foreign substances may be generated on the surface of a substrate when HMDS is hydrolyzed by moisture. In order to solve this problem, Patent Document 2 discloses performing from a heat treatment for evaporating moisture from the substrate surface to a step for hydrophobizing the substrate surface in a dehumidified atmosphere. In paragraph [0052] of Patent Document 2, “the surface of the wafer 10 is exposed to vapor HMDS. During this time, the wafer 10 is heated to, for example, 110 ° C. (step S3). The heating temperature is not limited to 110 ° C., as long as it can suppress the re-adsorption of moisture onto the surface of the wafer 10. For example, it may be 100 ° C. or higher.

JP 2000-150368 A JP 2004-103850 A

  According to the study by the present inventors, if the substrate is heat-treated after the substrate is sufficiently exposed to the HMDS gas, as described in Patent Document 1, the higher the heat treatment temperature, the higher the hydrophobicity of the substrate. . However, if the substrate is heated for the heat treatment before the substrate is sufficiently exposed to the HMDS gas, the hydrophobicity of the substrate does not increase as expected even if the heat treatment temperature is increased. I found.

  An object of the present invention is to provide a hydrophobizing method capable of sufficiently stably imparting a hydrophobizing degree expected in accordance with the heat treatment temperature of the substrate to the substrate, and an apparatus and a recording medium used therefor.

  The hydrophobization method according to the present invention is for hydrophobizing the surface of a substrate, and includes (A) a process of supplying a process gas for hydrophobization to the surface of the substrate, and (B) a process gas. A step of exposing the surface of the substrate to an atmosphere for a predetermined time; and (C) a step of heating the substrate in the presence of a processing gas after the step (B).

  According to the hydrophobization method, the reactant molecules (for example, HMDS molecules) contained in a sufficient amount of the processing gas are physically adsorbed on the substrate surface under low temperature conditions (for example, 15 to 35 ° C.) (step (A)). And (B) process), the heat processing (for example, heating temperature 60-180 degreeC) of a board | substrate can be implemented ((C) process). It is inferred that the physical adsorption of the reactant molecules on the substrate surface is dominant under low temperature conditions of 15 to 35 ° C., whereas the chemistry between the reactant molecules and the substrate surface is high temperature conditions of 60 to 180 ° C. It is inferred that the reaction is dominant.

  By sufficiently securing the time (for example, 2 to 10 seconds) for physically adsorbing the reactant molecules to the substrate surface, the hydrophobicity expected according to the heat treatment temperature of the substrate is sufficiently stable to the substrate. Can be granted. According to the study by the present inventors, in the conventional hydrophobizing apparatus, there is a distance (for example, 5 to 6 m) between the process gas supply source and the chamber in which the hydrophobizing process is performed. Due to where the on-off valve is arranged in the pipe to be connected, the performance of the hydrophobizing apparatus may differ when heat treatment (for example, 140 ° C. or higher) is performed at a high temperature.

  (A) and (b) of FIG. 11 are processed from the supply source A (right side) of the liquid reactant for hydrophobization (here, HMDS liquid) from the supply source A (right side) to the chamber C (left side) that performs the hydrophobization process through the flow path L A mechanism for supplying gas (here, nitrogen gas containing HMDS vapor) is shown. 11A shows a case where the three-way valve V1 is arranged near the chamber C, and FIG. 11B shows a case where the three-way valve V1 is arranged near the supply source A. Note that a heater H may be provided outside the flow path La from the supply source A to the three-way valve V1 so that HMDS vapor does not condense inside. Also, a nitrogen gas supply pipe is connected to the three-way valve V1, and the flow path Lb from the three-way valve V1 to the chamber C and the inside of the chamber C can be purged with nitrogen gas.

  In the case of the configuration shown in FIG. 11A, since the three-way valve V1 is near the chamber C and the flow path La from the supply source A to the three-way valve V1 is usually filled with the processing gas, the HMDS After the three-way valve V1 is switched so that the steam is introduced into the chamber C, the supply of the HMDS steam to the chamber C is started within a relatively short time. For this reason, there is an advantage that it is easy to secure time for the HMDS molecules to physically adsorb on the substrate surface. On the other hand, since the HMDS vapor constantly remains in the flow path La, there is a demerit that a performance difference tends to occur for each process.

  When the configuration shown in FIG. 11B is used, since the flow path La in which the HMDS vapor constantly remains is short, there is a merit that a performance difference for each process can be suppressed. On the other hand, since the flow path Lb from the three-way valve V1 to the chamber C is purged with nitrogen gas for each process, the HMDS vapor is switched after the three-way valve V1 is switched so that the HMDS vapor is introduced into the chamber C. It takes several seconds to actually supply the chamber C. When the control for starting the heating of the substrate is performed simultaneously with the switching of the three-way valve V1, the temperature of the substrate surface rises within a few seconds, and the substrate is heat-treated with insufficient physical adsorption of HMDS molecules. There is a demerit.

  According to the hydrophobic treatment method according to the present invention, for example, the degree of hydrophobicity expected according to the heat treatment temperature of the substrate is sufficiently stable with respect to the substrate regardless of the difference in the configuration of the apparatus as described above. There is a merit that it can be granted. That is, the hydrophobizing method according to the present invention can contribute to improving the robustness of the hydrophobizing apparatus.

  From the viewpoint of sufficiently causing physical adsorption of the reactant molecules for hydrophobization, the step (A) and the step (B) may be performed in a state where the substrate is disposed at a position away from the heating hot plate. The step (C) may be performed in a state where the substrate is disposed at a position close to the hot plate. In this case, the hydrophobic treatment method may further include a step of moving the substrate to a position close to the hot plate after the step (B) and before the step (C).

  From the same viewpoint, the steps (A) and (B) may be performed in a state where the substrate is disposed at an upper position separated from the heating hot plate. The step (C) may be performed in a state where the substrate is disposed at a position close to the hot plate. In this case, the hydrophobic treatment method may further include a step of lowering the substrate to a position close to the hot plate after the step (B) and before the step (C).

  (C) You may implement the heating of the board | substrate in a process by means other than a hot platen. For example, step (C) may be performed by supplying a heated processing gas to the surface of the substrate. Or you may implement the heating in (C) process by irradiating the light for radiation heating to a board | substrate.

  The physical adsorption of the reactant molecules on the substrate surface and the chemical reaction between the reactant molecules and the substrate surface may be performed in different chambers. That is, steps (A) and (B) are performed in a physical adsorption chamber, and step (C) is performed in a chemical reaction chamber that accommodates a hot plate and is located in the lateral direction for physical adsorption. Also good. In this case, the hydrophobic treatment method may further include a step of transporting the substrate from the physical adsorption chamber to the chemical reaction chamber after the step (B) and before the step (C).

  In order to prevent the processing gas containing the reactant molecules from adversely affecting other processing, the hydrophobic treatment method may further include a step of sucking a gas containing the processing gas from the peripheral side of the substrate. In order to suppress the back surface of the substrate from being hydrophobized, an inert gas or air may be supplied to the back surface of the substrate in the steps (A) and (B). Since the steps (A) and (B) are performed under a low temperature condition (for example, 15 to 35 ° C.), even if an inert gas or air is supplied to the back side of the substrate, the temperature is likely to cause a problem under a high temperature condition. The problem of processing variations due to uniformity is unlikely to occur. In addition, it is preferable that the temperature of the inert gas or air supplied to the back surface side of a board | substrate is also low temperature (for example, 15-35 degreeC).

  In the hydrophobization method, the process gas is supplied from the supply source to the flow path connecting the process gas supply source and the chamber in which the substrate hydrophobization process is performed, prior to the step (A). Thus, a step of filling a region from the supply source side in the flow path to the front of the chamber with the processing gas may be further provided. As described above with reference to FIG. 11B, when the flow path L from the three-way valve V <b> 1 to the chamber C is filled with nitrogen gas (inert gas), the supply source A and the chamber C are in a conductive state. After that, it takes several seconds until the processing gas is actually supplied to the chamber C. On the other hand, prior to the execution of the step (A), by replacing a part of the nitrogen gas in the flow path L with the processing gas, the supply source A and the chamber C are used to perform the step (A). Then, the processing gas can be introduced into the chamber C in a very short time after the state is made conductive (see FIG. 12).

  The step of substituting a part of the inert gas in the flow path with the processing gas may be performed until the hydrophobic treatment of the previous substrate is finished and the hydrophobic treatment of the next substrate is started. That is, in the hydrophobic treatment method, in steps (A) to (C), the process gas is supplied from the supply source to the chamber through a flow path that connects the supply source of the treatment gas and the chamber in which the hydrophobic treatment of the substrate is performed. After supplying, the process of supplying an inert gas to the chamber through the flow path, and before starting the hydrophobic treatment of the next substrate, by supplying the process gas from the process gas supply source to the flow path, You may further provide the process of filling the area | region from the supply source side in a flow path to the front of a chamber with a process gas (refer FIG. 13).

  As described above, when the region from the supply source side in the flow path to the front of the chamber is filled with the processing gas, an excessive amount of the processing gas is supplied from the supply source, and the processing gas flows into the chamber at an unintended timing. From the viewpoint of prevention, a three-way valve may be provided in the middle of the flow path and in the vicinity of the gas discharge port of the chamber (see FIG. 14).

  The following 1st-3rd aspects are mentioned as a specific apparatus for enforcing the said hydrophobic treatment method. According to the apparatus according to these embodiments, it is possible to ensure a sufficient time for the physical adsorption of the reactant molecules for hydrophobization on the substrate surface, and thus the expected hydrophobicity according to the heat treatment temperature of the substrate. Can be sufficiently stably applied to the substrate.

  An apparatus according to a first aspect includes a processing gas supply source for hydrophobization, a lid portion having an inner surface facing the surface of the substrate with a gap, a gas discharge port formed in the lid portion, and a supply source. A flow path for transferring the processing gas to the gas discharge port, a heat plate for heating the substrate, and a plurality of support pins for raising and lowering the substrate above the heat plate, and a plurality of supports at an upper position separated from the heat plate A processing gas can be supplied from the gas discharge port to the surface of the substrate while the substrate is held by pins.

  An apparatus according to a second aspect includes a processing gas supply source for hydrophobization, a lid portion having an inner surface facing the surface of the substrate with a gap, a gas discharge port formed in the lid portion, and a supply source. A first flow path for transferring the processing gas to the gas discharge port, a second flow path for transferring the processing gas from the supply source to the gas discharge port, and a processing gas transferred in the second flow path And a flow path from the supply source to the gas discharge port can be switched from the first flow path to the second flow path.

  An apparatus according to a third aspect is a physical adsorption chamber that can accommodate a substrate for supplying a processing gas for hydrophobization and a substrate, and the surface of the substrate is exposed to the processing gas when the processing gas is supplied. A chemical reaction chamber that can accommodate the substrate, has a hot plate for heating the substrate, is heated, and a transport plate that transports the substrate from the physical adsorption chamber to the chemical reaction chamber. Prepare. In order to suppress physical adsorption of reactant molecules on the back surface of the substrate in the physical adsorption chamber, the transport plate supports the substrate when the substrate is in the physical adsorption chamber, and an inert gas or You may have a flow path which supplies air. The temperature of the substrate during processing in the physical adsorption chamber is, for example, 15 to 35 ° C., and the temperature of the substrate during processing in the chemical reaction chamber is, for example, 60 to 180 ° C.

  The present invention provides a computer-readable recording medium for hydrophobization processing, in which a program for causing a hydrophobizing apparatus to execute the hydrophobizing method is recorded.

  According to the present invention, the degree of hydrophobicity expected according to the heat treatment temperature of the substrate can be imparted to the substrate sufficiently stably.

FIG. 1 is a perspective view of a substrate processing system to which a hydrophobizing apparatus (hydrophobizing unit) according to the present invention is applied. FIG. 2 is a sectional view taken along line II-II in FIG. FIG. 3 is a sectional view taken along line III-III in FIG. FIG. 4 is a cross-sectional view showing a schematic configuration of the hydrophobizing unit according to the first embodiment. FIG. 5 is a cross-sectional view showing a state in which the step (A) and the step (B) are performed in a state where the chamber of the hydrophobic treatment unit is opened. FIG. 6 is a cross-sectional view showing a state in which the step (C) is performed with the chamber of the hydrophobizing unit closed. FIG. 7 is a cross-sectional view showing a state where the gas replacement step is performed with the chamber of the hydrophobizing unit closed. FIG. 8 is a cross-sectional view showing a state in which the step (A) and the step (B) are performed in the hydrophobizing unit according to the second embodiment. FIG. 9 is a cross-sectional view showing a state in which the step (C) is performed in the hydrophobic treatment unit according to the second embodiment. FIGS. 10A to 10D are cross-sectional views schematically showing a state where the hydrophobic treatment is performed by the hydrophobic treatment unit according to the third embodiment. FIGS. 11A and 11B are schematic views showing a mechanism for supplying the processing gas from the processing gas supply source to the chamber through the flow path. 12A to 12C are schematic views showing an example of a process including a step of replacing a part of the inert gas in the flow path with a processing gas. FIGS. 13A to 13C are schematic diagrams showing another example of a process including a step of replacing a part of the inert gas in the flow path with a processing gas. FIG. 14A is a schematic view showing a state in which the processing gas from the supply source is transferred from the three-way valve to the exhaust side, and FIG. 14B is a state in which the processing gas from the supply source is supplied from the three-way valve to the chamber. It is a schematic diagram which shows. FIGS. 15A and 15B are schematic diagrams for explaining the contact angle of water droplets, which is an index of hydrophobicity of the substrate surface.

  DESCRIPTION OF EXEMPLARY EMBODIMENTS Hereinafter, preferred embodiments of the invention will be described in detail with reference to the drawings. In the description, the same elements or elements having the same functions are denoted by the same reference numerals, and redundant description is omitted. The hydrophobic treatment unit (hydrophobic treatment device) of this embodiment is a device for hydrophobizing the surface of a wafer in a substrate processing system. In general, the contact angle of water droplets dropped on the surface of the wafer is used as an index indicating the hydrophobicity (or hydrophilicity) of the wafer. As shown in FIG. 15, an angle θ formed by a line (one-dot chain line) connecting the center of the water droplet D and the outer edge of the water droplet D and the surface of the wafer W, and an angle 2θ obtained by doubling this angle is the contact angle. FIG. 15A shows a state in which water droplets D are dropped on a wafer W having a high surface hydrophobicity, while FIG. 15B shows a state in which water droplets D are dropped on a wafer W having a low surface hydrophobicity.

[Configuration of substrate processing system]
First, the substrate processing system 1 will be described with reference to FIGS. The substrate processing system 1 includes a coating and developing apparatus 2 and an exposure apparatus 3. The exposure apparatus 3 performs a resist film exposure process. Specifically, an energy ray is irradiated to the exposure target portion of the resist film (photosensitive coating) by a method such as immersion exposure. Examples of the energy ray include ArF excimer laser, KrF excimer laser, g ray, i ray, and extreme ultraviolet (EUV).

  The coating and developing apparatus 2 performs a process of forming a resist film on the surface of the wafer W (substrate) before the exposure process by the exposure apparatus 3, and performs a development process of the resist film after the exposure process. In the present embodiment, the wafer W has a disk shape, but a wafer having a part of a circle cut out or a shape other than a circle such as a polygon may be used. The wafer W may be, for example, a semiconductor substrate, a glass substrate, a mask substrate, an FPD (Flat Panel Display) substrate, or other various substrates.

  As shown in FIGS. 1 to 3, the coating and developing apparatus 2 includes a carrier block 4, a processing block 5, and an interface block 6. The carrier block 4, the processing block 5, and the interface block 6 are arranged in the horizontal direction.

  The carrier block 4 has a carrier station 12 and a carry-in / carry-out unit 13. The carry-in / carry-out unit 13 is interposed between the carrier station 12 and the processing block 5. The carrier station 12 supports a plurality of carriers 11. The carrier 11 accommodates, for example, a plurality of circular wafers W in a sealed state, and has an open / close door (not shown) for taking in and out the wafers W on the side surface 11a side (see FIG. 3). The carrier 11 is detachably installed on the carrier station 12 so that the side surface 11a faces the loading / unloading unit 13 side. The carry-in / carry-out unit 13 includes a plurality of opening / closing doors 13 a corresponding to the plurality of carriers 11 on the carrier station 12. By opening the open / close door and the open / close door 13a of the side surface 11a at the same time, the inside of the carrier 11 and the inside of the carry-in / out unit 13 are communicated. The carry-in / carry-out unit 13 incorporates a delivery arm A1. The delivery arm A <b> 1 takes out the wafer W from the carrier 11 and delivers it to the processing block 5, receives the wafer W from the processing block 5, and returns it into the carrier 11.

  The processing block 5 includes a BCT module (lower film forming module) 14, a COT module (resist film forming module) 15, a TCT module (upper film forming module) 16, and a DEV module (development processing module) 17. These modules are arranged in the order of the DEV module 17, the BCT module 14, the COT module 15, and the TCT module 16 from the floor side.

  The BCT module 14 is for forming a lower layer film (for example, an antireflection film) on the surface of the wafer W. As shown in FIG. 3, a coating unit U1, a heat treatment unit U2, a hydrophobic treatment unit U5, These units incorporate a transfer arm A2 for transferring the wafer W. The coating unit U1 is configured to apply a coating solution for forming a lower layer film to the surface of the wafer W. The heat treatment unit U2 is configured to heat the wafer W with a hot plate and cool the heated wafer W with, for example, a cooling plate to perform the heat treatment. Specific examples of the heat treatment performed in the BCT module 14 include a heat treatment for curing the lower layer film. The hydrophobic treatment unit U5 is configured to perform a hydrophobic treatment on the surface of the wafer W on which the antireflection film is formed. Details of the hydrophobizing unit U5 will be described later.

  The COT module 15 is configured to form a thermosetting and photosensitive resist film on the lower layer film. The COT module 15 includes a plurality of coating units (not shown), a plurality of heat treatment units (not shown), and a transfer arm A3 that transfers the wafer W to these units. The coating unit is configured to apply a processing liquid (resist agent) for forming a resist film on the lower layer film. The heat treatment unit U2 is configured to heat the wafer W by, for example, a hot plate, and perform the heat treatment by cooling the heated wafer W by, for example, a cooling plate. A specific example of the heat treatment performed in the COT module 15 includes a heat treatment (PAB: Pre Applied Bake) for curing the resist film.

  The TCT module 16 is configured to form an upper layer film on the resist film. The TCT module 16 includes a plurality of coating units (not shown), a plurality of heat treatment units (not shown), and a transfer arm A4 that transfers the wafer W to these units. The coating unit is configured to apply a coating solution for forming an upper layer film to the surface of the wafer W. The heat treatment unit is configured to heat the wafer W by, for example, a hot plate and cool the heated wafer W by, for example, a cooling plate to perform the heat treatment. A specific example of the heat treatment performed in the TCT module 16 is a heat treatment for curing the upper layer film.

  The DEV module 17 is configured to perform development processing of the exposed resist film. The DEV module 17 includes a plurality of developing units (not shown), a plurality of heat treatment units (not shown), a transfer arm A5 that transfers the wafer W to these units, and a wafer W that passes through these units. And a direct transfer arm A6 (see FIG. 2). The developing unit is configured to form a resist pattern by partially removing the resist film. The heat treatment unit performs the heat treatment by heating the wafer W using, for example, a hot plate, and cooling the heated wafer W using, for example, a cooling plate. Specific examples of the heat treatment performed in the DEV module 17 include a heat treatment before development processing (PEB: Post Exposure Bake), a heat treatment after development processing (PB: Post Bake), and the like.

  A shelf unit U10 is provided on the carrier block 4 side in the processing block 5 (see FIGS. 2 and 3). The shelf unit U10 is provided so as to extend from the floor surface to the TCT module 16, and is partitioned into a plurality of cells arranged in the vertical direction. An elevating arm A7 is provided in the vicinity of the shelf unit U10. The raising / lowering arm A7 raises / lowers the wafer W between the cells of the shelf unit U10.

  A shelf unit U11 is provided on the interface block 6 side in the processing block 5 (see FIGS. 2 and 3). The shelf unit U11 is provided so as to extend from the floor surface to the upper part of the DEV module 17, and is partitioned into a plurality of cells arranged in the vertical direction.

  The interface block 6 incorporates a delivery arm A8 and is connected to the exposure apparatus 3. The delivery arm A8 is configured to take out the wafer W of the shelf unit U11 and deliver it to the exposure apparatus 3, receive the wafer W from the exposure apparatus 3, and return it to the shelf unit U11.

[Configuration of hydrophobic treatment unit]
The hydrophobizing unit (hydrophobizing unit) U5 according to the first embodiment will be described in detail with reference to FIGS. As shown in FIG. 4, the hydrophobizing unit U <b> 5 includes an upper case (lid) 21, a lower case 22, an opening / closing unit 30, a heat plate 40, an air supply unit 60, and an exhaust unit 70. The elevating unit 80 and the control unit 90 are provided.

  The upper case 21 includes a circular top plate 21a that is horizontally disposed, and a peripheral wall 21b that protrudes downward from the peripheral edge of the top plate 21a. The lower case 22 includes a horizontally disposed circular bottom plate 22a, a peripheral wall 22b protruding upward from the peripheral edge of the bottom plate 22a, and a flange 22c provided on the outer periphery of the upper end of the peripheral wall 22b. It is arranged directly under the case 21. The outer diameter of the lower case 22 is smaller than the outer diameter of the upper case 21. The upper case 21 and the lower case 22 are separated from each other.

  The opening / closing unit 30 includes a shutter 31 and a shutter driver 32, and opens / closes between the peripheral portion of the upper case 21 and the peripheral portion of the lower case 22. The shutter 31 includes an upper flange 31a that contacts the lower end of the peripheral wall 21b of the upper case 21, a lower flange 31b that contacts the lower surface of the flange 22c of the lower case, an inner edge of the upper flange 31a, and an outer edge of the lower flange 31b. And a cylindrical peripheral wall 31c. The upper flange 31a is provided with a packing P1, and the packing P1 seals a gap between the upper surface of the upper flange 31a and the lower end surface of the peripheral wall 21b. A packing P2 is provided on the lower flange 31b, and the packing P2 seals a gap between the upper surface of the lower flange 31b and the lower surface of the flange 22c.

  The shutter driver 32 is an air cylinder, for example, and has an elevating rod 32a protruding upward. The tip of the elevating rod 32 a is fixed to the shutter 31. The shutter driver 32 moves the shutter 31 up and down via the lifting rod 32a.

  The upper case 21 and the lower case 22 form a processing space R1 therebetween. The wafer W to be hydrophobized is arranged horizontally in the processing space R1 so that the front surface Wa faces upward (the rear surface Wb faces downward). In the following description, “wafer W” means a wafer W arranged in the processing space R1.

  The hot plate 40 is for heat-treating the wafer W and is accommodated in the lower case 22. The heating plate 40 has a built-in heating wire (not shown), and the temperature is raised by supplying power to the heating wire.

  The air supply unit 60 includes a gas supply source 62 and a flow path 62a. The front end side of the flow path 62 a is connected to a gas discharge port 21 c provided at the center of the upper case 21. The gas supply source 62 is changed from a state in which an inert gas (for example, nitrogen gas) containing the hydrophobized processing solution vapor is supplied to the processing space R1 to a state in which only the inert gas is supplied to the processing space R1 by switching the three-way valve. (See FIG. 11). The hydrophobizing gas is, for example, a gas obtained by mixing a vaporized component of HMDS (hexamethyldisilazane) with nitrogen gas. HMDS reacts with silanol groups present on the wafer surface and becomes hydrophobic by covering the wafer surface with methyl groups. In FIG. 4, the number of gas discharge ports 21c provided in the upper case 21 is one, but a plurality of gas discharge ports 21c may be provided and a processing gas may be introduced into the processing space R1 from these discharge ports. Good.

  The exhaust unit 70 includes a gas exhaust port 71 and an exhaust pump 72. The gas discharge port 71 passes through the peripheral edge of the upper case 21 and opens at the lower end surface of the peripheral wall 21b. The exhaust pump 72 has a built-in electric fan or the like, for example, and is connected to the gas exhaust port 71 through an exhaust pipe 72a. The exhaust unit 70 drives the exhaust pump 72 to suck and exhaust the gas in the processing space R1 to the outside. Although FIG. 4 shows the case where the gas discharge port 71 is opened on the lower end surface of the peripheral wall 21b, the gas discharge port 71 may be opened on the inner surface of the peripheral wall 21b.

  The elevating unit 80 includes an elevating body 81 and an elevating body driving machine 82. The elevating body 81 has an elevating plate 81a disposed horizontally below the center of the lower case, and three support pins 81b protruding upward from the elevating plate 81a. In FIG. 4, only two support pins 81b are shown. The three support pins 81 b penetrate the bottom plate 22 a and the heat plate 40 of the lower case 22 and support the wafer W on the heat plate 40. The number of support pins 81b may be four or more.

  The elevating body driver 82 is, for example, an air cylinder, and has an elevating rod 82a that protrudes upward. The tip of the lifting rod 82a is fixed to the lifting plate 81a. The elevating body driver 82 elevates the elevating body 81 through the elevating rod 82a, and elevates the wafer W supported by the support pins 81b.

  The control unit 90 is a computer for control, and includes a display unit (not shown) that displays a setting screen for hydrophobic treatment conditions, an input unit (not shown) that inputs hydrophobic treatment conditions, and computer-readable recording. A reading unit (not shown) for reading the program from the medium. In the recording medium, a program for causing the control unit 90 to execute the hydrophobizing process is recorded, and this program is read by the reading unit of the control unit 90. Examples of the recording medium include a hard disk, a compact disk, a flash memory, a flexible disk, and a memory card. The control unit 90 controls the opening / closing unit 30, the hot plate 40, the air supply unit 60, the exhaust unit 70, and the lifting unit 80 according to the hydrophobization processing condition input to the input unit and the program read by the reading unit. Control and execute hydrophobic treatment.

[Control of hydrophobic treatment unit (hydrophobic treatment method)]
Hereinafter, the hydrophobic treatment method executed by the control unit 90 will be described. First, the controller 90 opens the gap between the peripheral edge of the upper case 21 and the peripheral edge of the lower case 22 by lowering the shutter 31 by controlling the opening / closing part 30 (see FIG. 5). In this state, the wafer W is loaded into the processing space R1. The wafer W is supported horizontally by the support pins 81b in the up state, and is thus disposed horizontally so that the surface Wa faces upward in the processing space R1.

  Next, the control unit 90 controls the supply of the processing gas as shown in FIG. 5 by controlling the air supply unit 60 while the peripheral edge of the processing space R1 is opened and the support pin 81b is up. (Step (A)) That is, the processing gas is supplied in a state where the wafer W is disposed at an upper position separated from the hot plate 40. Thereby, the surface of the wafer W can be exposed to the atmosphere containing the processing gas for a predetermined time (step (B)).

  In the step (A), the temperature of the processing gas introduced from the gas discharge port 21c is preferably 15 to 35 ° C, more preferably 15 to 30 ° C, and further preferably 15 to 20 ° C. If this temperature is 35 ° C. or less, a sufficient amount of HMDS can be physically adsorbed on the surface of the wafer W. In order to make this temperature less than 15 ° C., it is likely that a separate cooling means needs to be prepared. From the same viewpoint, in the step (B), the atmospheric temperature of the wafer W is preferably 15 to 35 ° C., more preferably 15 to 30 ° C., and further preferably 15 to 20 ° C. From the viewpoint of physically adsorbing HMDS to the surface of the wafer W more reliably, the surface temperature of the wafer W may be lower than the temperature of the processing gas.

  From the viewpoint of sufficiently physically adsorbing HMDS molecules on the surface of the wafer W and achieving high throughput, the processing time of the step (B) is preferably 2 to 10 seconds, more preferably 5 to 8 seconds. is there.

  As described above, since the process (A) and the process (B) are performed with the peripheral edge of the processing space R1 open, HMDS leaked from the processing space R1 may adversely affect other processes. In order to prevent this, the control unit 90 executes a control for discharging the gas containing HMDS from the gas discharge port 71 by operating the exhaust pump 72 while performing the steps (A) and (B). Also good. Further, from the viewpoint of reducing the leakage amount of the processing gas, it is preferable to make the gap between the peripheral edge of the wafer W and the inner surface of the peripheral wall 21b of the upper case 21 as small as possible. For example, by holding the wafer W with the support pins 81b in the up state, the wafer W is accommodated in the upper case 21, that is, the height position of the back surface Wb of the wafer W is higher than the lower surface of the peripheral wall 21b. You can do it.

  Next, the control unit 90 controls the elevating unit 80 to lower the elevating body 81 to place the wafer W on the hot plate 40 (see FIG. 6). Further, the gap between the peripheral edge of the upper case 21 and the peripheral edge of the lower case 22 is closed by controlling the opening / closing part 30 to raise the shutter 31. The controller 90 raises the temperature of the hot plate 40 by starting to supply power to the hot plate 40. Thereby, the surface temperature of the wafer W is heated to 60 to 180 ° C. (step (C)). Since the process (C) is performed with the processing space R1 sealed, the exhaust pump 72 is stopped. The supply of the processing gas by the air supply unit 60 is continued even after the start of the step (C). If a sufficient amount of HMDS is present in the processing space R1, the supply of the processing gas may be stopped after a predetermined time has elapsed from the start of the step (C) (for example, after 5 to 10 seconds). Alternatively, the processing gas may be intermittently introduced into the processing space R1 by repeatedly stopping and restarting the supply of the processing gas. (C) The processing time of a process becomes like this. Preferably it is 20 to 90 second, More preferably, it is 30 to 70 second.

  Next, the control unit 90 performs gas replacement control as shown in FIG. That is, the control unit 90 supplies the nitrogen gas into the processing space R1 by controlling the air supply unit 60 while maintaining the sealed state of the processing space R1, and operates the exhaust pump 72 to exhaust the gas. A gas containing HMDS is discharged from the outlet 71.

  Thus, the hydrophobic treatment is completed, and the control unit 90 controls the opening / closing unit 30 to lower the shutter 31 (see FIG. 5). Thereby, the space between the peripheral portion of the upper case 21 and the peripheral portion of the lower case 22 is opened again, and the wafer W is carried out.

Second Embodiment
[Configuration of hydrophobic treatment unit]
The hydrophobizing unit U15 according to the second embodiment will be described with reference to FIGS. Here, differences from the first embodiment will be mainly described. The hydrophobizing unit U15 includes a mechanism for heating the processing gas introduced into the processing space R1, instead of including the hot plate 40. The wafer W is heated by introducing the heated processing gas into the processing space R1 through the plurality of gas discharge ports 21c.

  As shown in FIG. 8, the hydrophobization unit U15 includes a first flow path 62a that supplies a processing gas containing HMDS vapor to the gas discharge port 21c, and a second flow path 62b that is different from the flow path 62a. Is provided. The second flow path 62b is also a flow path for supplying a gas containing HMDS vapor to the gas discharge port 21c. The second flow path 62b has a heater 62h that heats the processing gas in the flow path. The flow path from the gas supply source 62 to the gas discharge port 21c can be switched by the control unit 90 from the first flow path 62a to the second flow path 62b. Note that a heat retaining heater (not shown) for preventing HMDS dew condensation may be provided in a channel other than the portion where the heater 62h is provided in the second channel 62b.

[Control of hydrophobic treatment unit (hydrophobic treatment method)]
Hereinafter, the hydrophobic treatment method executed by the control unit 90 will be described. Again, differences from the above-described first embodiment will be mainly described.

  First, the controller 90 opens the gap between the peripheral edge of the upper case 21 and the peripheral edge of the lower case 22 by lowering the shutter 31 by controlling the opening / closing part 30 (see FIG. 5). In this state, the wafer W is loaded into the processing space R1. The wafer W is horizontally arranged in the processing space R1 so that the surface Wa faces upward. The controller 90 controls the elevating unit 80 to raise the elevating body 81 and supports the wafer W by the support pins 81 b of the elevating body 81. Thereafter, the opening / closing part 30 is controlled to raise the shutter 31, thereby closing the gap between the peripheral part of the upper case 21 and the peripheral part of the lower case 22.

  Next, the control unit 90 changes the support pin 81b from the up state to the down state. Thereafter, by controlling the air supply unit 60, the supply control of the processing gas is performed through the first flow path 62a as shown in FIG. 8 (step (A)). Thereby, the surface of the wafer W can be exposed to the atmosphere containing the processing gas for a predetermined time (step (B)). In addition, although the case where (A) process and (B) process were implemented with the support pin 81b down here was illustrated, these processes may be implemented in the up state, and the protrusion of the support pin 81b The wafer W may be arranged at an arbitrary height by adjusting the amount.

  In the step (A), the temperature of the processing gas introduced through the first flow path 62a is preferably 15 to 35 ° C, more preferably 15 to 30 ° C, and further preferably 15 to 20 ° C. If this temperature is 35 ° C. or less, a sufficient amount of HMDS can be physically adsorbed on the surface of the wafer W.

  Next, the control unit 90 controls the air supply unit 60 to switch the process gas flow path from the first flow path 62a to the second flow path 62b having the heater 62h as shown in FIG. The surface temperature of the wafer W is heated to 60 to 180 ° C. by discharging the heated processing gas from the plurality of gas discharge ports 21c (step (C)). (C) The processing time of a process becomes like this. Preferably it is 20 to 90 second, More preferably, it is 30 to 70 second. The step (C) may be performed with the support pins 81b up or down, or the amount of protrusion of the support pins 81b may be set so that the wafer W can be heated as uniformly as possible. The wafer W may be arranged at an arbitrary height by adjusting.

  Thereafter, the control unit 90 performs gas replacement control as in the first embodiment. Thus, the hydrophobization process is completed, and the control unit 90 controls the opening / closing unit 30 to lower the shutter 31. Thereby, the space between the peripheral portion of the upper case 21 and the peripheral portion of the lower case 22 is opened again, and the wafer W is carried out.

<Third Embodiment>
[Configuration of hydrophobic treatment unit]
A hydrophobizing unit U25 according to the third embodiment will be described with reference to FIG. Differences from the first embodiment will be mainly described here. The hydrophobizing unit U25 includes a physical adsorption chamber C1 that mainly advances HMDS physical adsorption on the wafer W, and a chemical reaction chamber C2 that mainly advances a chemical reaction between the HMDS and the surface of the wafer W. . The physical adsorption chamber C1 and the chemical reaction chamber C2 are arranged side by side in the horizontal direction.

  Both the physical adsorption chamber C1 and the chemical reaction chamber C2 can accommodate the wafer W, and include a common lower case 45 and two upper cases (lid portions) 41 and 42 that can be raised and lowered independently of each other. Composed. In the physical adsorption chamber C1, the surface of the wafer W is exposed to the processing gas under the temperature of 15 to 35 ° C. in the presence of the processing gas. In the chemical reaction chamber C2, the surface of the wafer W is exposed to the processing gas under the condition of a temperature of 60 to 180 ° C. in the presence of the processing gas. The lower case 45 has a heat plate 50 at a position corresponding to the upper case 42.

  The hydrophobizing unit U25 further includes a transport plate P for transporting the wafer W from the physical adsorption chamber C1 to the chemical reaction chamber C2. As shown in FIG. 10, the transfer plate P has a flow path Q for supplying an inert gas (for example, nitrogen gas) or air to the back surface Wb side of the wafer W. The lower case 45 has a flow path 45 a communicating with the flow path Q. Gas supply through the flow path Q and the flow path 45a is performed when the transport plate P is accommodated in the physical adsorption chamber C1. By suppressing the physical adsorption of HMDS to the back surface of the wafer W, it is possible to prevent the back surface of the wafer W from being inadvertently hydrophobized. Since the steps (A) and (B) are performed under a low temperature condition of 15 to 35 ° C., for example, if an inert gas or air having a temperature of 15 to 35 ° C. is supplied to the back surface of the substrate, the temperature becomes nonuniform. There is no problem of processing variations caused by it.

[Control of hydrophobic treatment unit (hydrophobic treatment method)]
First, as shown in FIG. 10A, the wafer W is loaded below the upper case 41 by the transfer plate P in the state where the upper case 41 of the physical adsorption chamber C1 is positioned upward and the support pins are up. To do. Thereafter, the upper case 41 is lowered to close the physical adsorption chamber C1. In this state, as shown in FIG. 10B, the processing gas is supplied to the front surface side of the wafer W (step (A)) and the inert gas is supplied to the back surface Wb side of the wafer W through the channel Q and the channel 45a. Or supply air. In the step (A), the temperature of the processing gas introduced into the physical adsorption chamber C1 is preferably 15 to 35 ° C, more preferably 15 to 30 ° C, and further preferably 15 to 20 ° C. Thereby, the surface of the wafer W can be exposed to the atmosphere containing the processing gas for a predetermined time (step (B)). By maintaining this state for preferably 2 to 10 seconds, more preferably 5 to 8 seconds, HMDS can be sufficiently physically adsorbed on the surface of the wafer W. The physical adsorption chamber C1 is provided with a gas discharge port (not shown) so that the internal gas can be discharged appropriately.

  Next, as shown in FIG. 10C, the upper case 41 is raised to open the physical adsorption chamber C <b> 1, and then the wafer W is placed below the upper case 42 of the chemical reaction chamber C <b> 2 by the transfer plate P. Carry in. Thereafter, as shown in FIG. 10D, the upper case 42 and the support pins are lowered to place the wafer W on the hot plate 50 and supply the processing gas to the surface of the wafer W while heating the hot plate 50. Is heated to 60 to 180 ° C. (step (C)). (C) The processing time of a process becomes like this. Preferably it is 20 to 90 second, More preferably, it is 30 to 70 second.

  Thus, the hydrophobization process is completed, and then the upper case 42 is opened and the support pins are raised. As a result, the wafer W can be unloaded by the transfer plate P from the chemical reaction chamber C2.

  As mentioned above, although embodiment of this invention was described in detail, this invention is not limited to the said embodiment, A various change is possible in the range which does not deviate from the summary. For example, in the first and second embodiments, the configuration in which the sealing and opening of the processing space R1 are switched by moving the lower case 22 up and down is illustrated, but the processing space R1 is sealed by moving the upper case 21 up and down. The opening may be switched.

  In the above embodiment, the flow path connecting the process gas supply source and the chamber in which the hydrophobic treatment of the wafer W is performed is filled with nitrogen gas (inert gas) (the process gas in the flow path is The case where the step (A) is started from the state purged with nitrogen gas is illustrated. However, after a part of the nitrogen gas in the flow path is replaced with the processing gas, the step (A) is started. May be. FIG. 12A is a diagram showing a state where the inside of the flow path L is filled with nitrogen gas before the step (A) is performed. 12 (b) operates the three-way valve V1 from the state of FIG. 12 (a), and supplies the processing gas from the supply source A to the flow path L, so that the chamber C from the supply source A side in the flow path L can be obtained. It is a figure which shows the state which substituted nitrogen gas with the process gas about the area | region until this side. A boundary B shown in FIG. 12B schematically shows a boundary between the processing gas and the nitrogen gas in the flow path L. The distance from the boundary B to the inlet (gas discharge port) of the chamber C is preferably 1 m or less, more preferably 0.6 m or less. FIG. 12C is a view showing a state in which the supply source A and the chamber C are brought into conduction in order to perform the step (A) from the state shown in FIG.

  As shown in FIG. 12B, the processing gas is allowed to reach the position of the boundary B in advance, so that the processing gas from the supply source A to the chamber C is started to be supplied within a very short time ( For example, the processing gas can be introduced into the chamber C within 1 second). When replacing the nitrogen gas in the flow path L with the processing gas, an excessive amount of the processing gas is supplied from the supply source A to the flow path L so that the processing gas does not flow into the chamber C at an unintended timing. An amount of processing gas smaller than the inner volume of the gas may be supplied from the supply source A to the flow path L. In the steps (A) to (C), after the processing gas is supplied from the supply source A to the chamber C through the flow path L, the processing gas in the flow path L is again replaced with nitrogen gas. Note that at the timing of replacing the gas in the flow path L (FIG. 12B), the chamber W may be opened to accept the wafer W to be hydrophobized.

  The process of substituting a part of the nitrogen gas in the flow path L with the processing gas may be performed until the hydrophobic treatment of the previous wafer W is completed and the hydrophobic treatment of the next wafer W is started. Good. FIG. 13A is a diagram showing a state in which the processing gas is supplied from the supply source A to the chamber C through the flow path L in the steps (A) to (C). FIG. 13B is a diagram showing a state where the three-way valve V1 is operated and nitrogen gas is supplied to the chamber C through the flow path L after the hydrophobic treatment of the wafer W is performed. FIG. 13C is a view showing a state in which the three-way valve V1 is operated again from the state of FIG. 13B and a part of the nitrogen gas in the flow path L is replaced with the processing gas. A boundary B shown in FIG. 13C schematically shows a boundary between the processing gas and the nitrogen gas in the flow path L. The distance from the boundary B to the inlet (gas discharge port) of the chamber C is preferably 1 m or less, more preferably 0.6 m or less.

  As shown in FIG. 13C, by supplying the processing gas to the position of the boundary B in advance, the processing gas is supplied from the supply source A to the chamber C in the hydrophobic treatment of the next wafer W. After starting, the processing gas can be introduced into the chamber C within a very short time (for example, within 1 second). The replacement of the gas in the flow path L may be performed in a state where the chamber C is closed, for example, while the hydrophobic wafer W is being cooled in the chamber C. After the hydrophobized wafer W is cooled, the wafer W is unloaded from the chamber C, and the next wafer W is loaded into the chamber C.

  A three-way valve may be further provided in the vicinity of the chamber C in the middle of the flow path L shown in FIGS. As shown in FIG. 14, by providing the three-way valve V2 in the vicinity of the chamber C, when a part of the nitrogen gas in the flow path L is replaced with the processing gas, an excessive amount of the processing gas is supplied from the supply source A. The processing gas can be prevented from flowing into the chamber C at an unintended timing. That is, the processing gas from the supply source A is supplied to the three-way valve V2. By operating the three-way valve V2, the supply destination of the processing gas can be switched to the chamber C or the discharge side (not shown). FIG. 14A is a schematic diagram showing how the processing gas from the supply source A is transferred from the three-way valve V2 to the exhaust side. By implementing this, the area | region to the three-way valve V2 in the flow path L is satisfy | filled with process gas. From this state, the processing gas can be introduced into the chamber C within a very short time (for example, within 1 second) by switching the three-way valve V2 when the step (A) is performed. The distance from the three-way valve V2 to the inlet (gas outlet) of the chamber C is preferably within 1 m, and more preferably within 0.6 m. FIG. 14B is a schematic diagram showing a state in which the processing gas from the supply source A is supplied from the three-way valve V2 to the chamber C. The process shown in FIGS. 12 to 14 is for continuously hydrophobizing a plurality of wafers W, and the time for which the processing gas remains in the flow path L is sufficiently short. There is no need to take measures such as heating the heater with a heater.

  In the above-described embodiment, the gas containing HMDS vapor is exemplified as the hydrophobizing gas, but a suitable processing gas may be selected according to the material of the substrate. In the second embodiment, the case where the processing gas heated for the heat treatment of the wafer W is used has been exemplified. In this case, light for radiation heating may be used in combination as a heat source. Various light-emitting elements can be used as the light source for radiation heating. Examples of the light emitting element include an LED, a semiconductor laser, a halogen lamp, and a xenon flash. A light emitting element may be disposed on the inner surface of the top plate 21 a so that light can be irradiated toward the surface Wa of the wafer W.

21, 41, 42 ... upper case (lid), 21c ... gas discharge port, 40, 50 ... hot plate, 62 ... gas supply source (process gas supply source), 62a ... flow path (first flow path) , 62b ... flow path (second flow path), 62h ... heater, 81b ... support pin, A ... processing gas supply source, C ... chamber, L ... flow path, C1 ... physical adsorption chamber, C2 ... chemical reaction Chamber, P ... conveying plate, Q ... flow path, U5, U15, U25 ... hydrophobic treatment unit (hydrophobic treatment device), V2 ... three-way valve, W ... wafer (substrate), Wa ... wafer surface, Wb ... The back side of the wafer.

Claims (20)

A hydrophobic treatment method for performing a hydrophobic treatment on a surface of a substrate,
(A) supplying a treatment gas for hydrophobization to the surface of the substrate;
(B) exposing the surface of the substrate to an atmosphere containing the processing gas for a predetermined time;
(C) after the step (B), heating the substrate in the presence of the processing gas;
A hydrophobization method comprising:   The hydrophobic treatment method according to claim 1, wherein the predetermined time in the step (B) is 2 to 10 seconds. The step (A) and the step (B) are performed with the substrate disposed at a position away from the heating plate for heating,
The step (C) is performed in a state where the substrate is disposed at a position close to the hot plate,
The hydrophobic treatment method according to claim 1, further comprising a step of moving the substrate to a position close to the hot plate after the step (B) and before the step (C). The step (A) and the step (B) are performed in a state where the substrate is disposed at an upper position separated from a heating plate for heating,
The step (C) is performed in a state where the substrate is disposed at a position close to the hot plate,
The hydrophobic treatment method according to claim 1, further comprising a step of lowering the substrate to a position close to the hot plate after the step (B) and before the step (C).   The hydrophobic treatment method according to claim 1 or 2, wherein the step (C) is performed by supplying the heated processing gas to the surface of the substrate.   The hydrophobic treatment method according to claim 1 or 2, wherein the heating in the step (C) is performed by irradiating the substrate with light for radiation heating. The step (A) and the step (B) are performed in a physical adsorption chamber,
The step (C) is performed in a chemical reaction chamber containing a hot plate,
The hydrophobization treatment according to claim 1, further comprising a step of transporting the substrate from the physical adsorption chamber to the chemical reaction chamber after the step (B) and before the step (C). Method.   The hydrophobization method according to claim 1, further comprising a step of sucking a gas containing the processing gas from a peripheral side of the substrate.   The hydrophobic treatment method according to any one of claims 1 to 8, wherein an inert gas or air is supplied to the back surface of the substrate in the step (A) and the step (B).   The hydrophobizing method according to claim 1, wherein the temperature of the substrate in the step (A) and the step (B) is 15 to 35 ° C. 10.   The temperature of the atmosphere in the step (B) is 15 to 35 ° C, and the heating temperature of the substrate in the step (C) is 60 to 180 ° C. Hydrophobic treatment method.   Prior to the execution of the step (A), by supplying the processing gas from the supply source to a flow path connecting the processing gas supply source and a chamber in which the substrate is hydrophobized, The hydrophobization method according to claim 1, further comprising a step of filling a region from the supply source side to the front of the chamber in the flow path with the processing gas. In the steps (A) to (C), after the processing gas is supplied from the supply source to the chamber through a flow path that connects the processing gas supply source and the chamber in which the substrate is hydrophobized. ,
Supplying an inert gas to the chamber through the flow path;
Prior to starting the hydrophobic treatment of the next substrate, by supplying the processing gas from the processing gas supply source to the flow path, from the supply source side in the flow path to the front of the chamber The method of hydrophobizing treatment according to claim 1, further comprising a step of filling the region with the processing gas. A hydrophobizing apparatus that performs a hydrophobizing process on the surface of a substrate,
A source of process gas for hydrophobization;
A lid having an inner surface facing the surface of the substrate with a gap;
A gas outlet formed in the lid;
A flow path for transferring the processing gas from the supply source to the gas outlet;
A hot plate for heating the substrate;
A plurality of support pins for raising and lowering the substrate above the hot plate;
With
A hydrophobizing apparatus capable of supplying the processing gas to the surface of the substrate from the gas discharge port in a state where the substrate is held by the plurality of support pins at an upper position separated from the hot plate.   The hydrophobic treatment apparatus according to claim 14, further comprising a three-way valve provided in the middle of the flow path and in the vicinity of the gas discharge port. A hydrophobizing apparatus that performs a hydrophobizing process on the surface of a substrate,
A source of process gas for hydrophobization;
A lid having an inner surface facing the surface of the substrate with a gap;
A gas outlet formed in the lid;
A first flow path for transferring the processing gas from the supply source to the gas outlet;
A second flow path for transferring the processing gas from the supply source to the gas outlet;
A heater for heating the processing gas transferred in the second flow path;
With
A hydrophobizing apparatus capable of switching a flow path from the supply source to the gas discharge port from the first flow path to the second flow path. A hydrophobizing apparatus that performs a hydrophobizing process on the surface of a substrate,
A source of process gas for hydrophobization;
A physical adsorption chamber that can accommodate the substrate and is exposed to the processing gas by being supplied with the processing gas;
A chemical reaction chamber that can accommodate the substrate, has a hot plate for heating the substrate, and in which the substrate is heated;
A transport plate for transporting the substrate from the physical adsorption chamber to the chemical reaction chamber;
Comprising a hydrophobizing apparatus.   18. The hydrophobic plate according to claim 17, wherein the transport plate has a flow path for supporting the substrate when the substrate is in the physical adsorption chamber and supplying an inert gas or air to the back surface side of the substrate. Processing equipment.   The temperature of the substrate during processing in the physical adsorption chamber is 15 to 35 ° C, and the heating temperature of the substrate during processing in the chemical reaction chamber is 60 to 180 ° C. The hydrophobizing apparatus described in 1.   A computer-readable recording medium for hydrophobizing processing, which records a program for causing the hydrophobizing processing apparatus to execute the hydrophobizing method according to any one of claims 1 to 13.

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