JPH02285676A - Solid-state image sensing device - Google Patents
Solid-state image sensing deviceInfo
- Publication number
- JPH02285676A JPH02285676A JP1108192A JP10819289A JPH02285676A JP H02285676 A JPH02285676 A JP H02285676A JP 1108192 A JP1108192 A JP 1108192A JP 10819289 A JP10819289 A JP 10819289A JP H02285676 A JPH02285676 A JP H02285676A
- Authority
- JP
- Japan
- Prior art keywords
- light
- film
- color filter
- substrate
- filter layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 239000011347 resin Substances 0.000 claims abstract description 24
- 229920005989 resin Polymers 0.000 claims abstract description 24
- 238000004043 dyeing Methods 0.000 claims description 9
- 238000003384 imaging method Methods 0.000 claims description 2
- 238000004528 spin coating Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 abstract description 67
- 239000002344 surface layer Substances 0.000 abstract description 12
- 238000000034 method Methods 0.000 abstract description 2
- 230000001788 irregular Effects 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 23
- 229910052782 aluminium Inorganic materials 0.000 description 23
- 230000000694 effects Effects 0.000 description 5
- 230000007257 malfunction Effects 0.000 description 4
- 108010010803 Gelatin Proteins 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229920000159 gelatin Polymers 0.000 description 3
- 239000008273 gelatin Substances 0.000 description 3
- 235000019322 gelatine Nutrition 0.000 description 3
- 235000011852 gelatine desserts Nutrition 0.000 description 3
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000009993 protective function Effects 0.000 description 1
Landscapes
- Color Television Image Signal Generators (AREA)
- Light Receiving Elements (AREA)
- Optical Filters (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
本発明は、ビデオカメラ又は医療用各種カメラ等の撮影
装置に使用される固体撮像素子に関するものである。TECHNICAL FIELD The present invention relates to a solid-state image sensor used in a photographing device such as a video camera or various medical cameras.
一般に、この種の固体撮像素子は、種々の構成のものが
知られており、基本的には例えば半導体ウェハから切断
したチップ状のシリコン基板上に多数個の受光素子群を
有し、その上面を透明な樹脂皮膜で覆ったものと、受光
素子群の上面に赤色、緑色及び青色からなる３色の色相
をずらして積層したカラーフィルター層を有する構成の
ものとが知られている。更に、前記受光素子群の一部を
アルミニウム皮膜で被覆した構成のものも知られている
。いずれにしても、固体撮像素子の表面には表面層が形
成され、保護機能を付与した構成になっている。
例えば、アルミニウム皮膜を有し、且つカラーフィルタ
層を有する固体撮像素子としては、第４〜５図に示した
構成を有している。同図において、１は例えば半導体ウ
ェハから所定の大きさに切断されたシリコン基板であり
、該基板に多数の受光素子群２が設けられており、該受
光素子群の一部に所定厚さのアルミニウム皮膜３がフレ
ーム状に被覆され、該アルミニウム皮膜３で囲まれた内
側に複数の色相のカラーフィルタ層４が設けられている
。前記アルミニウム皮膜３は、受光素子群２の一部を遮
光するために施されるものであり、この遮光された受光
素子群と前記カラーフィルタ層４で覆われている受光素
子群との間の電位差を見て、カラーフィルタ層４で覆わ
れている受光素子群が受光したかどうかを判定するよう
になっている。
又、前記カラーフィルタ層４は、−殻内に第５図に示し
たようにして形成されている。即ち、アルミニウム皮膜
３が被覆された基板１上に第１層目の色相５を形成する
ためにゼラチンをスピン−１トし、第１層目の色相とじ
て残Ｊ一部分が露光される所定のパターンマスクを使用
して露光し現像すると、部分的に受光素子に対応する部
分が残り、その残った部分を公知の染色手段により例え
ば赤色に染色して第１層目の色相を形成する。次に透明
な樹脂をスピンコー１へして中間層６を形成し、表面を
略平坦にしてから第２層目の色相７を前記同様にして形
成する。この第２層目の色相７は緑色である。更に、前
記同様にして中間層８及び第３層目の青色の色相９が形
成され、その表面に保護を兼ねた透明な樹脂による表面
層１０がスピンコートされている。尚、１１は基板に設
けられた複数の電極である。
そして、実際に使用される場合には、その１例として第
６図に示したようにして使用される。即ち、前記固体撮
像素子に所定のリード線１２を接続し、所定のケース１
３で全体を覆い、且つ該ケースの前面側、つまり固体撮
像素子の受光部側に、例えばガラス板等の透明な板材１
４を施蓋して使用される。In general, this type of solid-state image sensor is known to have various configurations, and basically has a large number of light-receiving element groups on a chip-shaped silicon substrate cut from a semiconductor wafer. Two types are known: one in which the light-receiving element group is covered with a transparent resin film, and the other in which a color filter layer consisting of three colors of red, green, and blue are laminated with different hues on the upper surface of the light-receiving element group. Furthermore, a structure in which a part of the light receiving element group is covered with an aluminum film is also known. In any case, a surface layer is formed on the surface of the solid-state image sensing device, giving it a protective function. For example, a solid-state imaging device having an aluminum film and a color filter layer has the configuration shown in FIGS. 4 and 5. In the figure, 1 is a silicon substrate cut into a predetermined size from a semiconductor wafer, for example, and a large number of light-receiving element groups 2 are provided on the substrate, and some of the light-receiving element groups have a predetermined thickness. An aluminum film 3 is coated in a frame shape, and color filter layers 4 of a plurality of hues are provided inside the aluminum film 3. The aluminum film 3 is applied to shield a part of the light-receiving element group 2 from light, and there is a gap between the light-shielded light-receiving element group and the light-receiving element group covered with the color filter layer 4. By looking at the potential difference, it is determined whether the light receiving element group covered with the color filter layer 4 has received light. Further, the color filter layer 4 is formed inside the -shell as shown in FIG. 5. That is, gelatin is spun to form a first layer of hue 5 on a substrate 1 coated with an aluminum film 3, and a predetermined layer is prepared in which the remaining portion of the gelatin is exposed to light after forming the first layer of hue 5. When exposed and developed using a pattern mask, a portion corresponding to the light receiving element remains, and the remaining portion is dyed, for example, red by a known dyeing means to form the hue of the first layer. Next, a transparent resin is applied to a spin coat 1 to form an intermediate layer 6, and after the surface is made substantially flat, a second layer of hue 7 is formed in the same manner as described above. The hue 7 of this second layer is green. Furthermore, an intermediate layer 8 and a third layer of blue hue 9 are formed in the same manner as described above, and a surface layer 10 made of a transparent resin that also serves as protection is spin-coated on the surface thereof. Note that 11 is a plurality of electrodes provided on the substrate. When it is actually used, it is used as shown in FIG. 6 as an example. That is, a predetermined lead wire 12 is connected to the solid-state image sensor, and a predetermined case 1 is set.
3, and a transparent plate material 1 such as a glass plate is placed on the front side of the case, that is, on the light receiving part side of the solid-state image sensor.
4 is used with the lid closed.
前記従来例においては、固体撮像素子の表面が透明な樹
脂皮膜、即ち表面層１０によって覆われた構成であって
、その表面層１０により表面の保護機能は有している。
しかしながら、前記表面層１０（よ表面の電極部分を除
く全域に亘って被覆しており、当然のことながらアルミ
ニウム皮膜３の上面も中間層６．８及び表面層１０で被
覆されて０る。この様な状態で使用すると、矢印ａで示
したように、外部からの光が前記アルミニウム皮膜３で
反射し、更に板ｖＪ１４で反射して受光部側に入射する
現象、Ｉ’ｌｌち乱反射の現象が生じ、それによって誤
動作を行う虞があり、画像処理に不都合を生ずる。従っ
て、従来例においては使用時にお番プる乱反射の除去に
課題を有している。In the conventional example, the surface of the solid-state image sensor is covered with a transparent resin film, that is, a surface layer 10, and the surface layer 10 has a surface protection function. However, the surface layer 10 covers the entire area except for the electrode portions on the surface, and naturally the upper surface of the aluminum film 3 is also covered with the intermediate layer 6.8 and the surface layer 10. When used in such conditions, as shown by arrow a, a phenomenon occurs in which light from the outside is reflected by the aluminum film 3, further reflected by the plate vJ14, and enters the light receiving section, a phenomenon of diffuse reflection. This may cause a malfunction, causing problems in image processing.Therefore, in the conventional example, there is a problem in removing the diffused reflection that occurs during use.
【課題を解決するための手段］
前記従来例の課題を解決する具体的手段として本発明は
、基板上の受光部と電極部とを除く表面全部を遮光膜で
被覆したことを特徴とする固体撮像素子を提供するもの
であって、更に前記遮光膜は、前記基板上の受光部にカ
ラーフィルター層を設けたものにおいては、該カラーフ
ィルター層と電極部とを除く表面全部を被覆し、もしく
はカラーフィルタに遮光部（ブラックストライプもしく
はブラックマトリックス）を除くカラーフィルター層と
電極部とを除く表面全部を被覆し、且つその遮光膜は感
光性の樹脂をスピンコートし、バタンマスクを用いて露
光、現像した後黒色に染色するものであり、黒色の遮光
膜の形成によって入光する光の乱反射現象が解消される
のである。尚、理想的には以上の通りであるが、実際に
はアンプ部等のように、検査などの用途で遮光できない
場合もある。
［実施例］
次に本発明を図示の実施例により更に詳しく説明する。
尚、理解を容易にするため従来例と同一部分には同一符
号を付してその詳細を省略する。
第１〜２図において、１はシリコン基板であり、該基板
に多数の受光素子群２が設けられており、該受光素子群
の一部に所定厚さのアルミニウム皮膜３がフレーム状に
被覆され、該アルミニウム皮膜３で囲まれた内側に複数
の色相のカラーフィルタ層４が設【ノられている。
前記カラーフィルタ層４は、第２図に示したよう形成さ
れている。このカラーフィルタ層４を形成するに先立っ
て、前記アルミニウム皮膜３で囲まれた内側に略同じ厚
さの透明な樹脂層１５を形成し、前記カラーフィルタ層
４が形成される領域において、アルミニウム皮膜３と基
板１との間の段差を実質的になくしてから、カラーフィ
ルタ層４を形成する。この様にアルミニウム皮膜３と透
明な樹脂層１５とを同一厚さに形成することで、その透
明な樹脂層１５の上部に光学的に優れたカラーフィルタ
層４が形成できるのである。この透明な樹脂層１５の形
成に当たっては、前記所定厚さのアルミニウム皮膜３が
フレーム状に被覆された後に、感光性の透明な樹脂をス
ピンコートし、カラーフィルタ層４が形成される領域の
みが露光するパターンマスクを使用して露光し、次に現
像してカラーフィルタ層４が形成される領域にのみ透明
な樹脂層１５を形成する。
このようにして形成された透明な樹脂層１５の上部に従
来例と同様な手段によりカラーフィルタ層４が形成され
る。即ち、アルミニウム皮膜３と透明な樹脂層１５の上
部に第１層目の色相７を形成するためにゼラチンをスピ
ンコートし、第１層目の色相として残す部分が露光され
る所定のパターンマスクを使用して露光し現像すると、
部分的に受光素子に対応する部分が残る。その残った部
分を公知の染色手段により緑色に染色して第１層目の色
相７を形成し、その上部に透明な樹脂をスピンコートし
て中間層６を形成し、表面を略平坦にする。
次に前記同様の手段により第２層目の色相５を形成する
。この第２層目の色相５は赤色である。
更に、前記同様にして中間層８及び第３層目の青色の色
相９が順次積層して形成され、その表面に保護を兼ねた
表面層１０がスピンコートされる。
このように、カラーフィルタ層４が形成される領域に透
明な樹脂層１５を形成することによって、アルミニウム
皮膜３と基板１との間の段差をなくし、その透明な樹脂
層１５の上部に色相及び中間層を順次積層することによ
り、特にアルミニウム皮膜３の境界部分に近接して形成
される色相の厚みが全体的に均一になり、該色相を通過
する光の屈折率に大きな変化がなくなり、光学的に優れ
たカラーフィルタ層となるのである。
次に、前記表面層１０の上部に感光性の樹脂をスピンコ
ー１〜して、所定厚さの皮膜を形成し、前記カラーフィ
ルタ層４の遮光所望部以外の領域、アンプ部１７及び電
極１１の部分を除いて、他の全部の表面が露光されるパ
ターンマスクを使用して露光し、その後現像することに
より前記カラーフィルター層４の遮光所望部以外の領域
、アンプ部１７及び電極１１の部分の皮膜が除去される
。そして、残った皮膜部分を黒色に染色することで黒色
の遮光膜１６が形成されるのである。この遮光膜１６は
、前記アルミニウム皮膜３に対応する部分に形成できれ
ば充分であるが、この場合に、前記遮光所望部以外の領
域と云うのは、例えばカラーフィルター層４を形成する
各色相に対応する部分であり、この部分の皮膜が除去さ
れることにより、各色相の境界部分に対応する皮膜、即
ち遮光部１６ａ（ブラックストライプもしくはブラック
マトリックス）も同時に形成できることも意味するので
ある。
尚、前記アルミニウム皮膜３の厚みは６０００〜１１０
００人であり、前記緑色及び赤色の色相７．５並びに、
前記遮光膜１６の染色前の厚みは１ｏｏｏｏ〜１３００
０人で、染色後の厚みが１５０００〜１６０００人とな
る。又、前記青色の色相９は、染色前の厚みが約４００
０人であり、染色後の厚みは約６０００人となっている
。更に、各中間層６．８及び表面層１０の厚みは１００
００〜１１０００人である。
このように構成された本発明の固体撮像素子を、従来例
と同様に使用した例を第３図に示しである。
同図において、前記固体撮像素子に所定のリード線１２
を接続し、所定のケース１３で全体を覆い、且つ該ケー
スの前面側、つまり固体撮像素子の受光部側に、ガラス
板等の透明な板材１４を施蓋して使用に供される。この
ように使用されても、入射する外光の内、受光部即ちカ
ラーフィルタ層４を除く他の部分に入射する光ａが、例
えばアルミニウム皮膜３に対応する部分に入射しても、
前記黒色の遮光膜１６により吸収されて、乱反射が全く
生じなくなり、受光素子の誤動作が全面的に解消できる
のである。尚、前記実施例は基板上にアルミニウム皮膜
、カラーフィルタ層及び透明な樹脂層を形成したものに
ついて説明したが、これに限定されることなく、例えば
透明な樹脂層のない前記従来例の構成の固体撮像素子の
上面にも遮光膜を形成すること、更にはアルミニウム皮
膜及びカラーフィルタ層のない、固体撮像素子にも適用
できることは云までもない。要は、受光部以外を遮光膜
で被覆し、乱反射を生じさせないようにすることが要件
である。
【発明の効果】
以上説明したように本発明に係る固体１１８（ｉ素子は
、基板上の受光部と電極部とを除（表面全部を遮光膜で
被覆した構成にすることによって、固体撮像素子の受光
部以外に入射した外光が、前記遮光膜で吸収され、受光
部近傍における外光による乱反射がなくなって、誤動作
を生じさせないと云優れた効果を奏する。
又、前記遮光膜は、前記基板上の受光部にカラーフィル
ター層を設けたものにおいても、該カラーフィルター層
と電極部とを除く表面全部を被覆しであるので、それに
よって前記同様に受光部近傍における乱反射現象を解消
させ、誤動作を生じさせないと云う優れた効果を奏する
。
更に、前記遮光膜は感光性の樹脂をスピンコートし、パ
ターンマスクを用いて露光、現像した後黒色に染色する
ものであり、遮光膜の形成が正確に且つ簡単に形成でき
ると云う優れた効果も奏する。
更に又、カラーフィルター層の遮光所望部に遮光部（ブ
ラックストライプもしくはブラックマトリックス）を形
成する場合には、前記遮光膜と同時に形成することがで
き、工程を増やすことなく簡単に実施することができる
などの種々の優れた効果も奏する。[Means for Solving the Problems] As a specific means for solving the problems of the conventional example, the present invention provides a solid state in which the entire surface of the substrate except for the light-receiving part and the electrode part is coated with a light-shielding film. Provided is an image sensor, in which the light-shielding film further covers the entire surface except for the color filter layer and the electrode part in the case where a color filter layer is provided on the light-receiving part on the substrate, or The entire surface of the color filter is coated with the color filter layer excluding the light shielding part (black stripe or black matrix) and the electrode part, and the light shielding film is spin-coated with a photosensitive resin and exposed using a baton mask. It is dyed black after development, and the formation of a black light-shielding film eliminates the phenomenon of diffuse reflection of incident light. Although the above is ideal, in reality there are cases where light cannot be shielded for purposes such as inspection, such as in the case of an amplifier section. [Examples] Next, the present invention will be explained in more detail with reference to illustrated examples. In order to facilitate understanding, the same parts as in the conventional example are given the same reference numerals and the details thereof are omitted. In FIGS. 1 and 2, 1 is a silicon substrate, on which a large number of light receiving element groups 2 are provided, and a part of the light receiving element groups are coated with an aluminum film 3 of a predetermined thickness in the form of a frame. A color filter layer 4 of a plurality of hues is provided inside the aluminum film 3. The color filter layer 4 is formed as shown in FIG. Prior to forming this color filter layer 4, a transparent resin layer 15 having approximately the same thickness is formed on the inside surrounded by the aluminum film 3, and in the region where the color filter layer 4 is to be formed, the aluminum film The color filter layer 4 is formed after substantially eliminating the step between the color filter layer 3 and the substrate 1. By forming the aluminum film 3 and the transparent resin layer 15 to have the same thickness in this manner, the optically excellent color filter layer 4 can be formed on the transparent resin layer 15. In forming this transparent resin layer 15, after the aluminum film 3 of a predetermined thickness is coated in a frame shape, a photosensitive transparent resin is spin-coated so that only the area where the color filter layer 4 will be formed is coated with a photosensitive transparent resin. The transparent resin layer 15 is formed only in the area where the color filter layer 4 is to be formed by exposure using a patterned mask and then development. The color filter layer 4 is formed on the transparent resin layer 15 formed in this manner by the same means as in the conventional example. That is, gelatin is spin-coated on top of the aluminum film 3 and the transparent resin layer 15 to form the first layer of hue 7, and a predetermined pattern mask is applied to expose the portion to be left as the first layer of hue. When exposed and developed using
A portion partially corresponding to the light receiving element remains. The remaining portion is dyed green using a known dyeing method to form a first layer of hue 7, and a transparent resin is spin-coated on top of it to form an intermediate layer 6 to make the surface substantially flat. . Next, a second layer of hue 5 is formed by the same means as described above. The hue 5 of this second layer is red. Furthermore, in the same manner as described above, an intermediate layer 8 and a third layer of blue hue 9 are sequentially laminated and formed, and a surface layer 10 that also serves as protection is spin-coated on the surface thereof. In this way, by forming the transparent resin layer 15 in the region where the color filter layer 4 is formed, the step between the aluminum film 3 and the substrate 1 is eliminated, and the hue and color are formed on the upper part of the transparent resin layer 15. By sequentially laminating the intermediate layers, the thickness of the hue formed especially near the boundary part of the aluminum film 3 becomes uniform throughout, and there is no large change in the refractive index of light passing through the hue, which improves optical performance. This results in an excellent color filter layer. Next, a photosensitive resin is spin coated on the top of the surface layer 10 to form a film of a predetermined thickness, and a film of a predetermined thickness is formed on the top of the surface layer 10, and the area of the color filter layer 4 other than the desired light shielding part, the amplifier part 17, and the electrode 11 are coated with a photosensitive resin. By exposing the entire surface of the color filter layer 4 to light using a pattern mask that exposes the entire surface of the color filter layer 4, and then developing it, the areas of the color filter layer 4 other than the desired light-shielding parts, the amplifier part 17, and the electrode 11 are The film is removed. Then, by dyeing the remaining film portion black, a black light-shielding film 16 is formed. It is sufficient that the light-shielding film 16 is formed on a portion corresponding to the aluminum film 3, but in this case, the region other than the desired light-shielding portion corresponds to each hue forming the color filter layer 4, for example. By removing the film in this part, it also means that a film corresponding to the boundary part of each hue, that is, a light shielding part 16a (black stripe or black matrix) can also be formed at the same time. Incidentally, the thickness of the aluminum film 3 is 6000 to 110 mm.
00 people, the hue of green and red is 7.5, and
The thickness of the light shielding film 16 before dyeing is 1oooo~1300
0 people, the thickness after dyeing will be 15,000 to 16,000 people. Further, the blue hue 9 has a thickness of about 400 mm before dyeing.
0 people, and the thickness after dyeing is approximately 6000 people. Furthermore, the thickness of each intermediate layer 6.8 and the surface layer 10 is 100
00 to 11,000 people. FIG. 3 shows an example in which the solid-state image sensing device of the present invention configured as described above is used in the same manner as the conventional example. In the figure, a predetermined lead wire 12 is connected to the solid-state image sensor.
is connected, the whole is covered with a predetermined case 13, and a transparent plate material 14 such as a glass plate is covered on the front side of the case, that is, on the light receiving part side of the solid-state image sensor. Even when used in this way, even if light a of the incident external light is incident on a portion other than the light receiving portion, that is, the color filter layer 4, and is incident on a portion corresponding to the aluminum film 3, for example,
The light is absorbed by the black light-shielding film 16, and no diffused reflection occurs at all, making it possible to completely eliminate malfunctions of the light-receiving element. Although the above embodiment has been described with an aluminum film, a color filter layer, and a transparent resin layer formed on a substrate, the present invention is not limited to this, and for example, the structure of the conventional example without a transparent resin layer may be used. It goes without saying that a light-shielding film can also be formed on the upper surface of a solid-state image sensor, and that the present invention can also be applied to a solid-state image sensor without an aluminum film or a color filter layer. In short, it is necessary to cover areas other than the light-receiving part with a light-shielding film to prevent diffused reflection. Effects of the Invention As explained above, the solid state 118 (i-device) according to the present invention can be used as a solid-state image sensor by having the entire surface of the substrate, except for the light-receiving part and the electrode part, covered with a light-shielding film. The light shielding film has the excellent effect that external light incident on a part other than the light receiving part is absorbed by the light shielding film, and diffuse reflection due to the external light in the vicinity of the light receiving part is eliminated, thereby preventing malfunctions. Even in the case where a color filter layer is provided on the light receiving section on the substrate, the entire surface except the color filter layer and the electrode section is covered, so that the diffused reflection phenomenon in the vicinity of the light receiving section is eliminated in the same way as above. This has an excellent effect of preventing malfunctions.Furthermore, the light-shielding film is formed by spin-coating a photosensitive resin, exposing it to light using a pattern mask, developing it, and then dyeing it black. It also has the excellent effect of being able to be formed accurately and easily.Furthermore, when forming a light-shielding portion (black stripe or black matrix) in a desired light-shielding portion of the color filter layer, it may be formed at the same time as the light-shielding film. It also has various excellent effects, such as being able to easily implement it without increasing the number of steps.
第１図は本発明に係る固体撮像素子の平面図、第２図は
第１図のＩＩ−ＩＩ線に沿う略示的拡大断面図、第３図
は同固体撮像素子の１使用例を示す略示的断面図、第４
図は従来例の固体撮像素子の平面図、第５図は第４図の
ｖ−ｖ線に沿う略示的拡大断面図、第６図は同従来例の
固体撮像素子の１使用例を示す略示的断面図である。
１・・・・・・基板 ２・・・・・・受光素子
群３・・・・・・アルミニウム皮膜
４・・・・・・カラーフィルタ層
５・・・・・・赤色の色相
７・・・・・・緑色の色相
１０・・・・・・表面層
１２・・・・・・リード線
１４・・・・・・透明な板材
１６・・・・・・遮光膜
１７・・・・・・アンプ部FIG. 1 is a plan view of a solid-state image sensor according to the present invention, FIG. 2 is a schematic enlarged cross-sectional view taken along line II-II in FIG. 1, and FIG. 3 is an example of the use of the solid-state image sensor. Schematic cross-sectional view, 4th
The figure is a plan view of a conventional solid-state image sensor, FIG. 5 is a schematic enlarged sectional view taken along the v-v line in FIG. 4, and FIG. 6 is an example of the use of the conventional solid-state image sensor. It is a schematic cross-sectional view. 1... Substrate 2... Light receiving element group 3... Aluminum film 4... Color filter layer 5... Red hue 7... ... Green hue 10 ... Surface layer 12 ... Lead wire 14 ... Transparent plate material 16 ... Light shielding film 17 ...・Amplifier section
Claims (7)
膜で被覆したことを特徴とする固体撮像素子。(1) A solid-state image pickup device characterized in that the entire surface of the substrate except for the light-receiving section and the electrode section is covered with a light-shielding film.
カラーフィルター層と電極部とを除く表面全部を遮光膜
で被覆したことを特徴とする固体撮像素子。(2) A solid-state image sensor, characterized in that a color filter layer is provided on a light receiving section on a substrate, and the entire surface except for the color filter layer and the electrode section is covered with a light shielding film.
カラーフィルター層の遮光所望部と電極部とを除く表面
全部を遮光膜で被覆したことを特徴とする固体撮像素子
。(3) A solid-state image pickup device characterized in that a color filter layer is provided on a light-receiving section on a substrate, and the entire surface of the color filter layer except for a desired light-shielding section and an electrode section is covered with a light-shielding film.
全部を遮光膜で被覆したことを特徴とする固体撮像素子
。(4) A solid-state image sensor characterized in that the entire surface of the substrate except for the light receiving section, electrode section, and amplifier section is covered with a light-shielding film.
カラーフィルター層と電極部とアンプ部とを除く表面全
部を遮光膜で被覆したことを特徴とする固体撮像素子。(5) A solid-state image pickup device, characterized in that a color filter layer is provided on a light-receiving section on a substrate, and the entire surface except for the color filter layer, electrode section, and amplifier section is covered with a light-shielding film.
カラーフィルター層の遮光所望部と電極部とアンプ部と
を除く表面全部を遮光膜で被覆したことを特徴とする固
体撮像素子。(6) A solid-state image pickup device, characterized in that a color filter layer is provided in a light receiving section on a substrate, and the entire surface of the color filter layer except for a desired light-shielding section, an electrode section, and an amplifier section is covered with a light-shielding film.
ンマスクを用いて露光、現像した後黒色に染色する請求
項 （１）、（２）、（３）、（４）、（５）又は（６
）記載の固体撮像素子。(7) Claims (1), (2), (3), (4), (5) that the light-shielding film is formed by spin-coating a photosensitive resin, exposing it to light using a pattern mask, developing it, and then dyeing it black. Or (6
) solid-state imaging device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10819289A JP2751376B2 (en) | 1989-04-27 | 1989-04-27 | Solid-state imaging device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10819289A JP2751376B2 (en) | 1989-04-27 | 1989-04-27 | Solid-state imaging device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02285676A true JPH02285676A (en) | 1990-11-22 |
| JP2751376B2 JP2751376B2 (en) | 1998-05-18 |
Family
ID=14478339
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10819289A Expired - Lifetime JP2751376B2 (en) | 1989-04-27 | 1989-04-27 | Solid-state imaging device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2751376B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04225565A (en) * | 1990-12-27 | 1992-08-14 | Matsushita Electron Corp | Solid state image sensor |
| JPH09166877A (en) * | 1995-12-18 | 1997-06-24 | Hamamatsu Photonics Kk | Production of optical semiconductor element |
| WO2005013369A1 (en) * | 2003-08-01 | 2005-02-10 | Matsushita Electric Industrial Co., Ltd. | Solid-state imaging device, production method for solid-state imaging device and camera using this |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5519885A (en) * | 1978-07-29 | 1980-02-12 | Dainippon Printing Co Ltd | Color solid imaging element plate |
| JPS6010671A (en) * | 1983-06-30 | 1985-01-19 | Toshiba Corp | Solid state image sensor |
| JPS6032487A (en) * | 1983-08-02 | 1985-02-19 | Nec Corp | Solid-state image pickup element |
-
1989
- 1989-04-27 JP JP10819289A patent/JP2751376B2/en not_active Expired - Lifetime
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5519885A (en) * | 1978-07-29 | 1980-02-12 | Dainippon Printing Co Ltd | Color solid imaging element plate |
| JPS6010671A (en) * | 1983-06-30 | 1985-01-19 | Toshiba Corp | Solid state image sensor |
| JPS6032487A (en) * | 1983-08-02 | 1985-02-19 | Nec Corp | Solid-state image pickup element |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04225565A (en) * | 1990-12-27 | 1992-08-14 | Matsushita Electron Corp | Solid state image sensor |
| JPH09166877A (en) * | 1995-12-18 | 1997-06-24 | Hamamatsu Photonics Kk | Production of optical semiconductor element |
| WO2005013369A1 (en) * | 2003-08-01 | 2005-02-10 | Matsushita Electric Industrial Co., Ltd. | Solid-state imaging device, production method for solid-state imaging device and camera using this |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2751376B2 (en) | 1998-05-18 |
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