JPH02271917A - Formation of sno2 film and production of photovoltaic device - Google Patents
Formation of sno2 film and production of photovoltaic deviceInfo
- Publication number
- JPH02271917A JPH02271917A JP9028189A JP9028189A JPH02271917A JP H02271917 A JPH02271917 A JP H02271917A JP 9028189 A JP9028189 A JP 9028189A JP 9028189 A JP9028189 A JP 9028189A JP H02271917 A JPH02271917 A JP H02271917A
- Authority
- JP
- Japan
- Prior art keywords
- film
- films
- sno
- sno2
- desired pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 3
- 230000015572 biosynthetic process Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 claims abstract description 11
- 230000001590 oxidative effect Effects 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 12
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract description 26
- 239000000758 substrate Substances 0.000 abstract description 14
- 239000011521 glass Substances 0.000 abstract description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract description 3
- 230000006866 deterioration Effects 0.000 abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 238000003486 chemical etching Methods 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000001017 electron-beam sputter deposition Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
（イ）産業上の利用分野
本発明は所望のパターンのＳｎＯ，膜の形成方法及び光
起電力装置の製造方法に関するものであり、本発明のＳ
ｎＯ＋膜は、液晶表示器、エレクトロルミネッセンス等
の表示器にも利用される。Detailed Description of the Invention (a) Industrial Application Field The present invention relates to a method of forming SnO in a desired pattern, a method of forming a film, and a method of manufacturing a photovoltaic device.
The nO+ film is also used in displays such as liquid crystal displays and electroluminescence.
（ロ）従来の技術
５ｎＯｔ膜からなる透明電極膜を用いた装置として光起
電力装置が存在する。第５図は、典型的な光起電力装置
の断面図を示し、２１はガラス等の透明基板、２２３〜
２２ Ｃはこの基板の表面に所望のパターンで分割配置
されたＳｎＯ＊からなる透明電極膜で、これらは、特開
昭５９−３５４８７号公報に記載されたように、基板２
１上に全面に形成された後、化学的エツチングによりパ
ターニングされる。２３ａ〜２３ｃは透明電極膜２２ａ
〜２２ｃの一側端を除いて透明電極膜２２ａ〜９２ｃ上
に積層された光活性層を有するアモルファスシリコン等
からなる半導体膜、２４ａ〜２４ｃはこの半導体膜２３
ａ〜２３ｃを挟んで透明電極２２ａ〜２２ｃと対向して
分割配置されたＡＩ、 Ｔｉ等の金属からなる裏面電極
膜であり、各裏面電極膜２４ａ、２４ｂは隣接した透明
電極膜２２ｂ、２２ｃの半導体膜２３ｂ、 ２３ｃから
露出した部分にまで延在してこれと重なって電気的に結
合している。従って、隣接した光起電力素子は電気的に
直列接続されている。(b) Prior Art A photovoltaic device exists as a device using a transparent electrode film made of a 5nOt film. FIG. 5 shows a cross-sectional view of a typical photovoltaic device, in which 21 is a transparent substrate such as glass, 223 -
22C is a transparent electrode film made of SnO* that is divided and arranged in a desired pattern on the surface of this substrate, and as described in JP-A No. 59-35487, these are transparent electrode films on the substrate 2.
1 and then patterned by chemical etching. 23a to 23c are transparent electrode films 22a
A semiconductor film 24a to 24c is a semiconductor film made of amorphous silicon or the like having a photoactive layer laminated on the transparent electrode films 22a to 92c except for one side end of the transparent electrode films 22c to 22c.
A back electrode film made of a metal such as AI or Ti is divided and arranged facing the transparent electrodes 22a to 22c with a to 23c in between. It extends to the exposed portions of the semiconductor films 23b and 23c, overlaps them, and is electrically coupled. Adjacent photovoltaic elements are therefore electrically connected in series.
（ハ）発明が解決しようとする課題
ところで、透明電極膜２２ａ〜２２ｃとしてのＳｎＯ２
膜は、−旦基板の略全面に形成された後、化学的エツチ
ングにより所望のパターンにパターニングされるが、こ
の時、エツチングに用いたレジスト膜が膜りに残留し、
次に形成される半導体膜２３に悪影響を与える可能性が
ある。更に、ＳｎＯ２膜は化学的に安定した物質である
ため、除去すべき部分が完全に除去されず基板２１上に
残存してしまうことがあり、この場合、隣接する光起電
力素子が電気的に短絡し、光起電力装置の出力特性が劣
化する。(c) Problems to be solved by the invention By the way, SnO2 as the transparent electrode films 22a to 22c
After the film is first formed on almost the entire surface of the substrate, it is patterned into a desired pattern by chemical etching, but at this time, the resist film used for etching remains on the film.
This may have an adverse effect on the semiconductor film 23 that will be formed next. Furthermore, since the SnO2 film is a chemically stable substance, the portion that should be removed may not be completely removed and may remain on the substrate 21. In this case, adjacent photovoltaic elements may be electrically damaged. Short circuit occurs and the output characteristics of the photovoltaic device deteriorate.
そこで１本発明の第１の目的は、化学的なエツチング処
理を用いることなく、所望のパターンの５ｎＯｙ膜を確
実に形成することにある。Therefore, a first object of the present invention is to reliably form a 5nOy film with a desired pattern without using chemical etching.
本発明の第２の目的は、所望のパターンのＳｎＯ２膜を
電気的に短絡することなく確実に形成し、光起電力装置
の出力特性の劣化を防止することにある。A second object of the present invention is to reliably form a SnO2 film in a desired pattern without causing electrical short circuits, and to prevent deterioration of the output characteristics of a photovoltaic device.
（ニ）課題を解決するための手段
本５ε明によるＳｎＯ２膜の形成方法は、予め５１１０
膜を形成し、このＳｎＯ膜を所望のパターンで熱酸化す
ることにより、Ｌ記所望のパターンの５ｎＯｔ膜を形成
することを特徴とする。(d) Means for Solving the Problems The method for forming a SnO2 film according to this book 5ε Akira is based on 5110
A 5nOt film having a desired pattern is formed by forming a film and thermally oxidizing this SnO film in a desired pattern.
史に、本発明の光起電力装置の装造方法は、上記ＳｏＯ
＋ｌ換からなる複数の透明電極膜を形成する工程と、こ
の透明電極膜上に光活性層を含む半導体膜を形成する工
程と、上記透明電極膜と対向すると共に隣の透明電極膜
と電気的に結隆される状態で−り記、゛を導体膜トに裏
面を極膜を形成する工程とを備えたことを特徴とする。Historically, the method for assembling a photovoltaic device of the present invention is based on the above-mentioned SoO
a step of forming a plurality of transparent electrode films consisting of a +l exchange; a step of forming a semiconductor film including a photoactive layer on the transparent electrode film; The method is characterized by comprising a step of forming a polar film on the back surface of the conductor film.
（ホ）作用
本発明は、予め非常に高抵抗のＳｎＯ膜を形成し、この
ＳｎＯ膜を所望のパターンで熱酸化することにより、化
学的なエツチング処理を用いることなくパターニングさ
れたＳｎＯ２膜を形成するものであり、各５ｎＯｔ膜の
電気的な分離は、各５ｎＯ１膜の１ＩＪ１に存在する高
抵抗のＳｎＯ膜がなす。(E) Function The present invention forms a SnO film with very high resistance in advance and thermally oxidizes this SnO film in a desired pattern to form a patterned SnO2 film without using chemical etching treatment. The electrical isolation of each 5nOt film is achieved by the high-resistance SnO film present at 1IJ1 of each 5nO1 film.
（へ）実施例
＠】図及び第２図は本発明の５ｎｏｖ膜の形成力；去を
工程順に示す断面図である。(F) Example @] Figures 1 and 2 are cross-sectional views showing the forming power of the 5nov film of the present invention in the order of steps.
第１図の工程において、ガラス、耐熱プラスチ、・り等
からなる基板１の略全面に、ＳｎＯ膜２が電子ビーム蒸
着法、スパッタ法等により形成される。In the process shown in FIG. 1, a SnO film 2 is formed on substantially the entire surface of a substrate 1 made of glass, heat-resistant plastic, resin, etc. by electron beam evaporation, sputtering, or the like.
第２図の工程において、後に形成しようとするＳＩＱ、
膜のパターンを露出するように、ＳｎＯ膜２上に、５ｉ
Ｏｙ膜、Ｓ ｌ 、Ｎ （膜等の絶縁膜３が形成される
。その後、３００℃以上の温度でＳｎＯ膜２を熱酸化す
ることにより、露出している部分のＳｎＯ膜２が酸化さ
れ、所望のパターンのＳｎＯｌ膜１が基板］上に形成さ
れる。In the process shown in FIG. 2, the SIQ to be formed later,
5i on the SnO film 2 so as to expose the pattern of the film.
An insulating film 3 such as an Oy film, S l , N (film, etc.) is formed. Then, by thermally oxidizing the SnO film 2 at a temperature of 300° C. or more, the exposed portion of the SnO film 2 is oxidized. A SnOl film 1 having a desired pattern is formed on the substrate.
第：３図は、ＳｎＯ膜２の熱酸化時間と膜２の抵抗値の
変化との関係を示す特性図である。尚、同図は、ＳｎＯ
膜２を５２０℃で熱酸化したものであり、１〜５は、Ｓ
ｎＯ嘆２の膜厚が２３５人、４００人、５４０人、１５
０（１人及び５４６０人の場合を各々示している。FIG. 3 is a characteristic diagram showing the relationship between the thermal oxidation time of the SnO film 2 and the change in resistance value of the film 2. In addition, the figure shows SnO
Film 2 is thermally oxidized at 520°C, and 1 to 5 are S
The film thickness of nO 2 is 235, 400, 540, 15
0 (cases of 1 person and 5460 people are shown respectively).
同図から見て、ＳｎＯ１１！２は、１００ｋｌｌ／ｌ］
以上の抵抗値であるが、熱酸化することにより得られる
ＳｎＯｒ［４の抵抗値は、熱処理時間及び膜厚により種
々の値となるが、約１ ｋＱ１０以下の抵抗値となり、
十分に透明電極膜として使用し得る状態となる。Looking from the same figure, SnO11!2 is 100kll/l]
The resistance value of SnOr[4 obtained by thermal oxidation varies depending on the heat treatment time and film thickness, but the resistance value is about 1 kQ10 or less,
The film is in a state where it can be used as a transparent electrode film.
方、絶縁膜３にて被覆された部分のＳｎＯ膜２は、１（
ｌｔＪｋＱ／口以１−の抵抗値を有したままである。従
って、基板１上には、ＳｎＯ，膜４が、それらの間のＳ
ｎＯ膜２にてそれぞれ所望のパターンに電気的に分離さ
れた状態で、基板ｌ上にパターニング形成されることと
なる。On the other hand, the portion of the SnO film 2 covered with the insulating film 3 has a thickness of 1(
It remains at a resistance value of ltJkQ/1-. Therefore, on the substrate 1, there is a SnO film 4 and an S film 4 between them.
They are patterned on the substrate 1 in a state where they are electrically separated into desired patterns by the nO film 2.
第４図は、本発明の方法により形成された光起電力装置
を示す断面図である。FIG. 4 is a cross-sectional view of a photovoltaic device formed by the method of the present invention.
１１はプラス等の透明基板、＋２ａ〜１２ｃはこの基板
の表面に所望のパターンで分割配置された５ｎＯｔから
なる透明電極膜で、これらは、上述のように、基板１１
上に全面に形成されたＳｎＯ膜を絶縁膜１５にて所望の
パターンにパターニングすることにより形成さｔしる。Reference numeral 11 denotes a transparent substrate such as a positive electrode, and +2a to 12c denote transparent electrode films made of 5nOt divided and arranged in a desired pattern on the surface of this substrate.
An insulating film 15 is formed by patterning the SnO film formed over the entire surface into a desired pattern.
１３ａ −１３ｃは透明電極膜１２ａ〜１２ｃの一側端
を除いて透明電極膜１２ａ〜１２ｃ上に積層された光活
性層を有するアモルファスシリコン等からなる半導体膜
、１４ａ〜１４ｃはこの半導体膜１３ａ −１３ｃを挾
んで透明型ｔＩ１１ｉ１２ａ〜１２ｃと対向して分割配
置されたＡ１、Ｔｉ等の金属からなる裏面ｔｆＭ膜であ
り、各裏面電極膜１４ａ、１４ｂは隣接した透明電極膜
１２ｂ、１２ｃの半導体膜１３ｂ、１３ｃから露出した
部分にまで延在してユバと重なって電気的に結合してい
る。13a to 13c are semiconductor films made of amorphous silicon or the like having a photoactive layer stacked on the transparent electrode films 12a to 12c except for one side end of the transparent electrode films 12a to 12c, and 14a to 14c are semiconductor films 13a to 13c. A back tfM film made of a metal such as A1 or Ti is divided and arranged facing the transparent tI11i 12a to 12c with the back electrode film 14a, 14b being the semiconductor film of the adjacent transparent electrode film 12b, 12c. It extends from 13b and 13c to the exposed portion, overlaps with the outer layer, and is electrically coupled.
従って、隣接した光起電力素子は電気的に直列接続され
ている。Adjacent photovoltaic elements are therefore electrically connected in series.
（ト）発明の効果
本発明によれば、予めＳｎＯ膜を形成し、このＳｎＯ膜
を所望のパターンで酸化することにより所望のパターン
のＳｎＯ２膜を形成するので、化学的なエツチング処理
を用いることなく、所望のパターンのＳｎＯ！膜を簡単
かつ確実に形成することができる。(G) Effects of the Invention According to the present invention, a SnO film is formed in advance and the SnO film is oxidized in a desired pattern to form a SnO2 film in a desired pattern, so chemical etching treatment is not required. SnO of the desired pattern! A film can be formed easily and reliably.
更に、このＳｎＯ２膜を光起電力装置に用いることによ
り、装置の各素子を電気的に短絡することなく確実に彩
成し、光起電力装置の出力特性の劣化を防止し得る。Furthermore, by using this SnO2 film in a photovoltaic device, it is possible to reliably color each element of the device without electrically shorting it, and to prevent deterioration of the output characteristics of the photovoltaic device.
第１図及び第２図は本発明のＳｎＯ２膜の形成方法を工
程順に示す断面図、第３図はＳｎＯ膜の熱酸化時間とこ
れの抵抗値の変化との関係を示す特性図、第４図は本発
明の方法により形成された光起電力装置を示す断面図、
第５図は典型的な光起電力装置の断面図である。
１・・基板、２・・・ＳｎＯ膜、４・・・ＳｎＯ２膜。1 and 2 are cross-sectional views showing the method of forming a SnO2 film according to the present invention in the order of steps; FIG. 3 is a characteristic diagram showing the relationship between the thermal oxidation time of the SnO film and the change in its resistance value; The figure is a cross-sectional view showing a photovoltaic device formed by the method of the present invention,
FIG. 5 is a cross-sectional view of a typical photovoltaic device. 1...Substrate, 2...SnO film, 4...SnO2 film.
Claims (2)
ターンで熱酸化することにより、上記所望のパターンの
ＳｎＯ＿２膜を形成することを特徴とするＳｎＯ＿２膜
の形成方法。(1) A method for forming a SnO_2 film, which comprises forming a SnO film in advance and thermally oxidizing the SnO film in a desired pattern to form a SnO_2 film in the desired pattern.
極膜を形成する工程と、この透明電極膜上に光活性層を
含む半導体膜を形成する工程と、上記透明電極膜と対向
すると共に隣の透明電極膜と電気的に結合される状態で
上記半導体膜上に裏面電極膜を形成する工程とを備えた
ことを特徴とする光起電力装置の製造方法。(2) a step of forming a plurality of transparent electrode films made of the SnO_2 film described in item 1; a step of forming a semiconductor film including a photoactive layer on the transparent electrode film; A method for manufacturing a photovoltaic device, comprising the step of forming a back electrode film on the semiconductor film in a state where it is electrically coupled to an adjacent transparent electrode film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9028189A JPH02271917A (en) | 1989-04-10 | 1989-04-10 | Formation of sno2 film and production of photovoltaic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9028189A JPH02271917A (en) | 1989-04-10 | 1989-04-10 | Formation of sno2 film and production of photovoltaic device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02271917A true JPH02271917A (en) | 1990-11-06 |
Family
ID=13994136
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9028189A Pending JPH02271917A (en) | 1989-04-10 | 1989-04-10 | Formation of sno2 film and production of photovoltaic device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02271917A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010212285A (en) * | 2009-03-06 | 2010-09-24 | Canon Inc | Method for forming semiconductor element and semiconductor element |
-
1989
- 1989-04-10 JP JP9028189A patent/JPH02271917A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010212285A (en) * | 2009-03-06 | 2010-09-24 | Canon Inc | Method for forming semiconductor element and semiconductor element |
| CN102341912A (en) * | 2009-03-06 | 2012-02-01 | 佳能株式会社 | Method for forming semiconductor film, method for forming semiconductor device and semiconductor device |
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