JPS6330270A - Preparation of thin head - Google Patents
Preparation of thin headInfo
- Publication number
- JPS6330270A JPS6330270A JP17448786A JP17448786A JPS6330270A JP S6330270 A JPS6330270 A JP S6330270A JP 17448786 A JP17448786 A JP 17448786A JP 17448786 A JP17448786 A JP 17448786A JP S6330270 A JPS6330270 A JP S6330270A
- Authority
- JP
- Japan
- Prior art keywords
- conductor
- thick film
- film
- gold
- resist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004020 conductor Substances 0.000 claims abstract description 35
- 238000000034 method Methods 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 238000007639 printing Methods 0.000 claims abstract description 6
- 239000010408 film Substances 0.000 claims description 27
- 239000010409 thin film Substances 0.000 claims description 17
- 238000010438 heat treatment Methods 0.000 claims description 13
- 238000010030 laminating Methods 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 2
- 238000005338 heat storage Methods 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract description 10
- 229910052737 gold Inorganic materials 0.000 abstract description 10
- 239000010931 gold Substances 0.000 abstract description 10
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 abstract description 6
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052782 aluminium Inorganic materials 0.000 abstract description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 4
- IHWJXGQYRBHUIF-UHFFFAOYSA-N [Ag].[Pt] Chemical compound [Ag].[Pt] IHWJXGQYRBHUIF-UHFFFAOYSA-N 0.000 abstract description 3
- 239000000919 ceramic Substances 0.000 abstract description 3
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 3
- HWEYZGSCHQNNEH-UHFFFAOYSA-N silicon tantalum Chemical compound [Si].[Ta] HWEYZGSCHQNNEH-UHFFFAOYSA-N 0.000 abstract description 3
- 238000004544 sputter deposition Methods 0.000 abstract description 2
- 239000012528 membrane Substances 0.000 abstract 3
- 238000001312 dry etching Methods 0.000 abstract 1
- 238000009751 slip forming Methods 0.000 abstract 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/315—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material
- B41J2/32—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material using thermal heads
- B41J2/335—Structure of thermal heads
Landscapes
- Electronic Switches (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、絶縁基板上に蓄熱ガラス層と１発熱抵抗体と
電極導体層を積層してなる薄膜型サーマルヘッドの製造
方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method of manufacturing a thin film type thermal head in which a heat storage glass layer, a heating resistor, and an electrode conductor layer are laminated on an insulating substrate.
一般のサーマルヘッドでは、絶縁基板上に共通導体と発
熱体と導体配線列が接続されており、駆動回路により選
釈された導体に共通導体より電流が流れ、発熱体の温度
上昇で、これに接触する記録紙を変色させて印字を行う
ものである。In a general thermal head, a common conductor, a heating element, and a conductor wiring row are connected on an insulating substrate, and current flows from the common conductor to the conductor selected by the drive circuit, and as the temperature of the heating element rises, this occurs. Printing is performed by changing the color of the recording paper that comes into contact with it.
上述した従来のサーマルヘッドでは外部電源から駆動用
ＩＣの電源入力部までの配線抵抗値が問題となる。薄膜
配線導体の膜厚を厚くする。ことは成膜時間がかかるの
で、通常電源配線部は銀等の低抵抗厚膜と薄膜との二重
構造とし配線抵抗値を下げる。方法が用い、られる、と
ころで、薄膜のパターン化によく用いるフッ酸系のエッ
チャントはグレーズをエツチングするので厚膜形成後、
耐エツチング憔の高い酸化物薄膜等を成膜した後に導体
薄膜を成膜するのが一般的である。しかし、な、がら、
酸化物薄膜は厚膜と薄膜とのコンタクト抵抗を上げる媒
体となり、充分な低抵抗値が得ｅ、れない、従って、駆
動用ＩＣの電源入力部が多く、、それぞれから基板上の
電源外部端子裏での距離に差がある場合、駆動用ＩＣの
各電源入力部に対応する出力トランジスタの動作電圧に
差を生じ、中間調の印字をムラなく得ることができなく
なる。In the conventional thermal head described above, the wiring resistance value from the external power source to the power input section of the driving IC poses a problem. Increase the thickness of the thin film wiring conductor. Since it takes a long time to form a film, the power supply wiring section usually has a double structure of a low-resistance thick film such as silver and a thin film to reduce the wiring resistance. By the way, the hydrofluoric acid-based etchant often used for patterning thin films etches the glaze, so after forming a thick film,
It is common to form a conductor thin film after forming an oxide thin film or the like having high etching resistance. however,
The oxide thin film serves as a medium to increase the contact resistance between the thick film and the thin film, and it is difficult to obtain a sufficiently low resistance value.Therefore, there are many power input sections for the drive IC, and from each power supply external terminal on the board. If there is a difference in distance on the back side, there will be a difference in the operating voltages of the output transistors corresponding to each power input section of the driving IC, making it impossible to obtain even halftone printing.
Ｃ問題点を解決するための手段〕
本発明のサーマルヘッドの製造方法は、厚膜導体を印刷
する工程と、前記厚膜導体」二に絶縁性薄膜を積層し、
該積層領域において絶縁性薄膜の一部を除去し、その後
発熱抵抗体、電極導電体の各薄膜を積層する工程を有す
る。Means for Solving Problem C] The method for manufacturing a thermal head of the present invention includes the steps of printing a thick film conductor, laminating an insulating thin film on the thick film conductor, and
The method includes a step of removing a portion of the insulating thin film in the lamination region, and then laminating thin films of a heating resistor and an electrode conductor.
次に、本発明の実施例について図面を参照して説明する
。Next, embodiments of the present invention will be described with reference to the drawings.
第１図から第４図は本発明のサーマルヘッドの製造方法
の一実施例で、各工程における第５図Ａ−，Ａ線の断面
図、第５図は本発明のサーマルヘッドの配線部を拡大し
た図である。Figures 1 to 4 show an embodiment of the method for manufacturing a thermal head of the present invention, and Figure 5 is a cross-sectional view taken along line A--A in each step. This is an enlarged view.
グレーズドセラミック基板ｌに外部端子用の厚膜金導体
３および電源配線部に金導体３と接続させて銀−白金厚
膜４をそれぞれ印刷、焼成する。Thick film gold conductors 3 for external terminals and gold conductors 3 are connected to power supply wiring portions on a glazed ceramic substrate 1, and silver-platinum thick films 4 are printed and fired, respectively.
そしてスパッタリング法で、エツチングの際にグレーズ
および厚膜導体を保護するための五酸化タンタル層５を
３０００八程度の厚さに成膜する。次に窓あけ部８の領
域と厚膜金導体３上のみを残し、基板全面をレジストで
覆い、窓あけ部８および厚膜金導体３」二の五酸化タン
タル膜５をＣＦ４＋０２ガスによるドライエツチングで
除去する（第１図）。なお、厚膜金導体３上の五酸化タ
ンタル膜５を除去するのは外部回路との電気的接合を得
るためである。次に、レジストを剥離した後、スパッタ
リンク法で発熱体用タンタルシリコン膜６を２５００へ
の厚さに、配線導体としてのアルミニウム膜７を １．
５障の厚さに連続成膜する（第２図）。この基板を公知
のフォトレジスト技術を用いて膜回路パターンを形成す
る。最初にアルミニウム膜７をリン酸系のエッチャント
でエツチングし、次にタンタルシリコン膜６をフッ酸系
のエッチャントで連続的にエツチングする。次にレジス
トを剥離した後、同様のフォトレジスト法により部分グ
レーズ上の発熱抵抗体パターンを形成するためアルミニ
ウム膜７をリン酸系のエッチャントでエツチングする（
第３図）。レジスト剥離後、発熱体ＩＣ上に耐摩耗層９
を形成する０次に、配線導体部に絶縁樹脂で絶縁層を形
成後、駆動ＩＣをマウントし、ワイヤーポンディングで
各発熱体と接続する。そしてＩＣ部を保護樹脂で覆えば
サーマルヘッドができあがる。Then, by sputtering, a tantalum pentoxide layer 5 for protecting the glaze and the thick film conductor during etching is formed to a thickness of about 30,008 mm. Next, leaving only the region of the window opening 8 and the top of the thick film gold conductor 3, the entire surface of the substrate is covered with resist, and the tantalum pentoxide film 5 of the window opening 8 and the thick film gold conductor 3 is dry etched using CF4+02 gas. (Figure 1). Note that the reason why the tantalum pentoxide film 5 on the thick film gold conductor 3 is removed is to obtain electrical connection with an external circuit. Next, after peeling off the resist, the tantalum silicon film 6 for the heating element is formed to a thickness of 2,500 mm using a sputter link method, and the aluminum film 7 as a wiring conductor is formed.1.
Continuous film formation is performed to a thickness of 5 degrees (Fig. 2). A film circuit pattern is formed on this substrate using a known photoresist technique. First, the aluminum film 7 is etched with a phosphoric acid-based etchant, and then the tantalum silicon film 6 is continuously etched with a hydrofluoric acid-based etchant. Next, after peeling off the resist, the aluminum film 7 is etched with a phosphoric acid-based etchant to form a heating resistor pattern on the partial glaze using the same photoresist method (
Figure 3). After removing the resist, a wear-resistant layer 9 is placed on the heating element IC.
Next, after forming an insulating layer on the wiring conductor part using an insulating resin, the drive IC is mounted and connected to each heating element by wire bonding. Then, by covering the IC part with a protective resin, a thermal head is completed.
以−１−説明したように本発明は、厚膜導体上に絶縁性
薄膜を積層し、該積層領域において絶縁性薄膜の一部を
除去し、その後発熱抵抗体、電極導電体の各薄膜を積層
することにより、厚膜と電極導電体を電気的に接合し、
電源配線部の配線抵抗値を下げ、駆動用ＩＣの各電源入
力端子間の電圧の差を許容範囲内に入れることができ、
ムラの無い中間調印字を得ることができる効果がある。As described above-1-, the present invention involves laminating an insulating thin film on a thick film conductor, removing a portion of the insulating thin film in the laminated region, and then removing each thin film of the heating resistor and the electrode conductor. By laminating, the thick film and electrode conductor are electrically connected,
It is possible to lower the wiring resistance value of the power supply wiring part and keep the voltage difference between each power supply input terminal of the drive IC within the permissible range.
This has the effect of making it possible to obtain uniform halftone printing.
第１図から第４図は本発明のサーマルヘッドの製造方法
の一実施例で、各工程における第５図Ａ−Ａｌｌの断面
図、第５図は本発明のサーマルヘッドの配線部を拡大し
た図である。
１・・・セラミック基板、 ２・・・グレーズ層、３
・・・厚膜金導体、 ４・・・銀−白金厚膜、５・
・・五酸化タンタル層、
６・・・タンタルシリコン層（発熱抵抗体層）、７・・
・アルミニウム層（電極導電体層）、８・・・窓あけ部
、 ９・・・耐摩耗層、１０・・・発熱体、
−３只ｎ−Figures 1 to 4 show an example of the method for manufacturing a thermal head of the present invention, and Figure 5 is a cross-sectional view of A-All in each step, and Figure 5 is an enlarged view of the wiring section of the thermal head of the present invention. It is a diagram. 1... Ceramic substrate, 2... Glaze layer, 3
...Thick film gold conductor, 4...Silver-platinum thick film, 5.
...Tantalum pentoxide layer, 6...Tantalum silicon layer (heating resistor layer), 7...
- Aluminum layer (electrode conductor layer), 8... Window opening, 9... Wear-resistant layer, 10... Heating element, -3 only n-
Claims (1)
層を積層してなるサーマルヘッドの製造方法において、
厚膜導体を印刷する工程と、前記厚膜導体上に絶縁性薄
膜を積層し、該積層領域において絶縁性薄膜の一部を除
去し、その後発熱抵抗体、電極導電体の各薄膜を積層す
る工程を含むことを特徴とするサーマルヘッドの製造方
法。In a method for manufacturing a thermal head in which a heat storage glass layer, a heating resistor layer, and an electrode conductor layer are laminated on an insulating substrate,
A step of printing a thick film conductor, laminating an insulating thin film on the thick film conductor, removing a part of the insulating thin film in the laminated region, and then laminating each thin film of a heating resistor and an electrode conductor. A method for manufacturing a thermal head, the method comprising the steps of:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17448786A JPS6330270A (en) | 1986-07-23 | 1986-07-23 | Preparation of thin head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17448786A JPS6330270A (en) | 1986-07-23 | 1986-07-23 | Preparation of thin head |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6330270A true JPS6330270A (en) | 1988-02-08 |
Family
ID=15979340
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17448786A Pending JPS6330270A (en) | 1986-07-23 | 1986-07-23 | Preparation of thin head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6330270A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5126007A (en) * | 1990-11-16 | 1992-06-30 | At&T Bell Laboratories | Method for etching a pattern in layer of gold |
-
1986
- 1986-07-23 JP JP17448786A patent/JPS6330270A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5126007A (en) * | 1990-11-16 | 1992-06-30 | At&T Bell Laboratories | Method for etching a pattern in layer of gold |
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