JPH0370184A - Photovoltaic device - Google Patents
Photovoltaic deviceInfo
- Publication number
- JPH0370184A JPH0370184A JP1206440A JP20644089A JPH0370184A JP H0370184 A JPH0370184 A JP H0370184A JP 1206440 A JP1206440 A JP 1206440A JP 20644089 A JP20644089 A JP 20644089A JP H0370184 A JPH0370184 A JP H0370184A
- Authority
- JP
- Japan
- Prior art keywords
- photoelectric conversion
- transparent electrode
- surface electrode
- electrode
- amorphous silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000006243 chemical reaction Methods 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract description 15
- 238000005530 etching Methods 0.000 abstract description 6
- 239000004642 Polyimide Substances 0.000 abstract description 4
- 229920001721 polyimide Polymers 0.000 abstract description 4
- 229910052709 silver Inorganic materials 0.000 abstract description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- 230000001678 irradiating effect Effects 0.000 abstract 1
- 238000002955 isolation Methods 0.000 abstract 1
- 238000000059 patterning Methods 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
- 238000000034 method Methods 0.000 description 9
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000003486 chemical etching Methods 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
（イ）産業上の利用分野
本発明は、非晶質シリコン等を用いた太陽電池等の光起
電力装置に関する。DETAILED DESCRIPTION OF THE INVENTION (a) Industrial Application Field The present invention relates to a photovoltaic device such as a solar cell using amorphous silicon or the like.
（ロ）従来の技術
非晶質シリコン光起電力素子を用いた太陽電池あるいは
光センサなどの光起電力装置が多く用いられている。(b) Prior Art Photovoltaic devices such as solar cells or optical sensors using amorphous silicon photovoltaic elements are often used.
ところで、非晶質シリコン光起電力素子は単素子当りの
出力電圧が０．６〜０．８Ｖと低いため、民生機器など
に用いるためには、複数個の素子を直列接続する必要が
ある。そのため、絶縁材であるガラス基板上に複数のバ
ターニングされた透明電極を設け、その基板上に、非晶
質シリコン層を堆積させ、その上面に裏面電極としてバ
ターニングされた金属電極を配設して、同一基板上に複
数の素子が直列接続された光起電力装置が用いられてい
る。By the way, since an amorphous silicon photovoltaic element has a low output voltage of 0.6 to 0.8 V per single element, it is necessary to connect a plurality of elements in series in order to use the amorphous silicon photovoltaic element in consumer equipment. Therefore, a plurality of patterned transparent electrodes are provided on an insulating glass substrate, an amorphous silicon layer is deposited on the substrate, and a patterned metal electrode is placed on the top surface as a back electrode. Therefore, a photovoltaic device is used in which a plurality of elements are connected in series on the same substrate.
しかし、ガラス基板式のものは、衝撃に弱くて破損しや
すく、可撓性に乏しいことから、可搬型、薄型の機器に
用いるには不十分であった。そこで、ステンレス鋼板の
裏面にポリイミド、酸化アルミニウムなどの絶縁膜を施
した可撓性基板を用いた光起電力装置が提案されている
。例えば、特開昭６２−８９３６９号公報等に詳しい。However, the glass substrate type is weak against impact, easily damaged, and has poor flexibility, so it is not suitable for use in portable, thin devices. Therefore, a photovoltaic device has been proposed that uses a flexible substrate having an insulating film of polyimide, aluminum oxide, or the like applied to the back surface of a stainless steel plate. For example, details can be found in Japanese Patent Application Laid-Open No. 62-89369.
従来の可撓性基板を用いた光電変Ｆｖ！８装置の製造方
法の一例を第３図に従い説明する。Photoelectric conversion Fv using conventional flexible substrate! An example of a method for manufacturing the No. 8 device will be explained with reference to FIG.
まず、第３図（イ）に示すように、ステンレス等からな
る可撓性導電性基板（１）上の全面に、ポリイミドＡｌ
２０ｉ 、 ＳｉＯｘ等の絶縁膜（２）を形成し、更に
、その上にＡ１． Ａｇ、 Ｔｉ、 Ｃｒ等の裏面電極
（３）を全面に形成する。そして、ホトレジ法を用いて
、所定のパターンになるように、エツチングにより裏面
電極（３）のパターニングを行う。First, as shown in FIG. 3(a), a polyimide Al
20i, an insulating film (2) such as SiOx is formed, and then A1. A back electrode (3) made of Ag, Ti, Cr, etc. is formed on the entire surface. Then, the back electrode (3) is patterned by etching into a predetermined pattern using a photoresist method.
次に、第３図（ロ）に示すように、光電変換領域として
の非晶質シリコン（４）をｎｉｐまたはｐｉｎの順に積
層形成した後、ホトレジ法を用いてケミカルエツチング
またはドライエツチングにより非晶質シリコン（４）を
所定のパターンに形成する６
続いて、第３１図（ハ）に示すように、ＩＴＯ等からな
る透明電極（５）を非晶質シリコン（４）上に形成した
後、ホトレジ法を用いて、所定のパターンになるように
透明電極（５）のケミカルエツチングを行って、光起電
力装置が形成される。Next, as shown in FIG. 3(b), amorphous silicon (4) serving as a photoelectric conversion region is laminated in the order of nip or pin, and then amorphous silicon is etched by chemical etching or dry etching using a photoresist method. Next, as shown in FIG. 31(C), after forming a transparent electrode (5) made of ITO or the like on the amorphous silicon (4), A photovoltaic device is formed by chemically etching the transparent electrode (5) into a predetermined pattern using a photoresist method.
（ハ）発明が解決しようとする課題
ＩＴＯ等からなる透明電極（５）は、膜厚が厚くなると
、ケミカルエツチングができないため、従来は透明電極
（５）の膜厚を薄くせざるを得ない。例えば、ＩＴＯの
場合、膜厚は１０００Å以下である。(c) Problems to be Solved by the Invention Conventionally, the transparent electrode (5) made of ITO or the like cannot be chemically etched if it becomes thick, so conventionally the transparent electrode (5) had to be made thinner. . For example, in the case of ITO, the film thickness is 1000 Å or less.
しかし、ＩＴＯのシート抵抗は膜厚が薄い程大きくなり
、ＩＴＯによる抵抗損失が大きくなり、光起電力装置の
出力特性の向上を図る上での問題となっていた。However, the sheet resistance of ITO increases as the film thickness decreases, and resistance loss due to ITO increases, which has been a problem in improving the output characteristics of photovoltaic devices.
本発明は、上述した難点に鑑みなされたものにして、透
明電極の膜厚を厚くして、シート抵抗を小さくすること
が、可能な光起電力装置を提供することをその課題とす
る。The present invention has been made in view of the above-mentioned difficulties, and an object of the present invention is to provide a photovoltaic device in which it is possible to increase the film thickness of the transparent electrode and reduce the sheet resistance.
（ニ）課題を解決するための手段
本発明は、可撓性導電性基板上に、絶縁膜、裏面電極、
光電変換領域、透明電極を順次積層し、基板上に複数の
光電変換素子を形成すると共に、複数の光電変換素子を
接続してなる光起電力装置であって、前記裏面電極の各
光電変換素子を分難する領域に突出部を形成したことを
特徴とする。(d) Means for Solving the Problems The present invention provides an insulating film, a back electrode,
A photovoltaic device in which a photoelectric conversion region and a transparent electrode are sequentially laminated, a plurality of photoelectric conversion elements are formed on a substrate, and the plurality of photoelectric conversion elements are connected, each photoelectric conversion element of the back electrode It is characterized in that a protrusion is formed in the area where it is divided.
（ホ）作用
裏面電極の突出部上の透明電極の膜厚は、この部分以外
の透明電極の膜厚に比べ、非常に薄くなる。そのため、
透明電極の膜厚を大幅に厚くしても、透明電極のエツチ
ングにより、各光電変換素子の分難が可能となる。従っ
て、透明電極のシート抵抗を大幅に低減でき、光起電力
装置の出力特性が向上する。(e) The film thickness of the transparent electrode on the protruding part of the working back electrode is much thinner than the film thickness of the transparent electrode other than this part. Therefore,
Even if the film thickness of the transparent electrode is significantly increased, each photoelectric conversion element can be separated by etching the transparent electrode. Therefore, the sheet resistance of the transparent electrode can be significantly reduced, and the output characteristics of the photovoltaic device can be improved.
（へ）実施例
以下、本発明の一実施例を第１図および第２図に従い説
明する。(f) Example Hereinafter, an example of the present invention will be described with reference to FIGS. 1 and 2.
第１図は、本発明による光起電力装置の断面図である。FIG. 1 is a cross-sectional view of a photovoltaic device according to the invention.
尚、従来例と同一部分には同一符合を付し、説明を略す
。Note that the same parts as in the conventional example are given the same reference numerals, and explanations are omitted.
第１図に示すように、ステンレス等からなる可撓性導電
性基板（１）上にポリイミド、Ａ１．Ｏ，等の絶縁膜（
２）が形成される。この絶縁膜（２）上に、所定の形状
にバターニングされたＡ１． Ａｇ。As shown in FIG. 1, polyimide, A1. Insulating films such as O, etc.
2) is formed. On this insulating film (2), A1. Ag.
Ｔｉ、 Ｃｒ等の裏面電極（３）が配設される。A back electrode (3) made of Ti, Cr, etc. is provided.
そして、この裏面電極（３）の各光電変換素子を分難す
る分難領域（６）に突出部（７）が形成されている。こ
の突出部（７）は裏面電極（３）がエツチング除去され
た部分より若干能れた位置にレーザ光を照射し、裏面量
１ｆ！（３）を溶融させて形成する。A protrusion (7) is formed in a separation region (6) for separating each photoelectric conversion element of this back electrode (3). This protrusion (7) is irradiated with a laser beam at a position slightly wider than the part where the back electrode (3) has been etched away, and the back surface amount is 1f! (3) is formed by melting.
この裏面電極（３）上に、光電変換領域として、ｎｉｐ
またはｐｉｎに順次積層された非晶質シリコン（４）が
設けられる。この非晶質シリコン（４）上に、膜厚２５
００＾程度のＩＴＯからなる透明電極（５）が形成され
る。On this back electrode (3), a nip is placed as a photoelectric conversion region.
Alternatively, amorphous silicon (4) sequentially stacked on the pin is provided. On this amorphous silicon (4), a film thickness of 25
A transparent electrode (5) made of ITO of about 00^ is formed.
而して、前記裏面電極（３）の突出部（７）に位置する
箇所の透明電ｔｉ（５）は、他の位置の透明電極（５）
に比して大幅に薄くなる１例えば、前述のように、ＩＴ
Ｏを２５００人形成した場合、突出部（７）上の透明電
極（５）の膜厚は１０００ Ａ以下であった。Therefore, the transparent electrode ti (5) located at the protrusion (7) of the back electrode (3) is different from the transparent electrode (5) located at another position.
For example, as mentioned above, IT
When 2,500 O layers were formed, the film thickness of the transparent electrode (5) on the protrusion (7) was 1,000 A or less.
従って、光起電力装置の出力特性の向上のために、透明
電極（５）を従来より大幅に厚くしてち、各光電変換素
子を分難するために、エツチングを施す部分の膜厚は薄
く、各光電変換素子は容易に分難できる。Therefore, in order to improve the output characteristics of the photovoltaic device, the transparent electrode (5) is made much thicker than before, and in order to separate each photoelectric conversion element, the thickness of the etched portion is made thinner. , each photoelectric conversion element can be easily distinguished.
第１表は、上述した本発明による膜厚２５００ ＡのＩ
ＴＯからなる透明電極を用いた光起電力装置と、膜厚１
０００＾のＩＴＯからなる透明導電膜を用いた従来の光
起電力装置装置の出力特性を本発明の特性を１として示
したものである。Table 1 shows the I of film thickness 2500 A according to the present invention described above
A photovoltaic device using a transparent electrode made of TO and a film thickness of 1
The output characteristics of a conventional photovoltaic device using a transparent conductive film made of ITO of 000^ are shown with the characteristics of the present invention as 1.
尚、透明電極（５）シート抵抗は、膜厚２５００人の場
合２０Ω／口以下、膜厚１０００ Ａでは５０Ω／口程
度である。Note that the sheet resistance of the transparent electrode (5) is 20Ω/mouth or less when the film thickness is 2500 people, and about 50Ω/mouth when the film thickness is 1000A.
表１ 第１表から明らかなように、本発明によれば。Table 1 According to the invention, as is clear from Table 1.
出力特性が向上していることが判かる。It can be seen that the output characteristics are improved.
次に、本発明の光起電力装置の製造方法の一例につき、
第２図面の簡単な説明する。Next, regarding an example of the method for manufacturing the photovoltaic device of the present invention,
A brief explanation of the second drawing will be provided.
まず、第２図（イ）に示すように、可撓性導電性基板（
１）の全面に絶縁膜（２）を形成し、更に、その上に裏
面ＴＬ極（３）を全面に形成する。First, as shown in Figure 2 (a), a flexible conductive substrate (
An insulating film (2) is formed on the entire surface of 1), and a back TL pole (3) is further formed on the entire surface.
そして、ホトレジ法を用いて、所定のパターンになるよ
うに、エツチングにより裏面電極（３）のパターニング
を行なう。Then, the back electrode (3) is patterned by etching into a predetermined pattern using a photoresist method.
続いて、第２図（ロ）に示すように、各光電変換素子を
分難する分難領域（６） すなわち、後工程で透明電極
を除去する領域に伝導する箇所をレーザ光（８）で照射
し、裏面電極（３）を溶融させて、突出部（７）を形成
する。ここで、レーザ光の条件としては、裏面電極（３
）を除去せずに、溶融する条件に設定する。Next, as shown in Figure 2 (b), the separation area (6) where each photoelectric conversion element is separated, that is, the part that conducts to the area where the transparent electrode will be removed in a later process, is exposed with a laser beam (8). The back electrode (3) is irradiated and melted to form a protrusion (7). Here, the conditions for the laser light are as follows:
) without removing it.
次に第２図（ハ）に示すように、光電変換領域としての
非晶質シリコン（４）をｎｉｐまたはｐｉｎの順に積層
形成し、ホトレジ法を用いてケミカルエツチングまたは
ドライエツチングにより非晶質シリコン（４）を所定の
パターンに形成する。Next, as shown in FIG. 2(c), amorphous silicon (4) as a photoelectric conversion region is layered in the order of nip or pin, and the amorphous silicon is etched by chemical etching or dry etching using the photoresist method. (4) is formed into a predetermined pattern.
その後、第２図（ニ）に示すように、透明電極（５）と
して、膜厚、２５００＾のＩＴＯを非晶質シリコン（４
）上に形成すると、突出部（７）上の膜厚は他の領域の
膜厚に比して大幅に薄くなる。突出部（７）上の透明導
電膜（５）の膜厚は１０００Å以下である。Thereafter, as shown in FIG. 2(d), ITO with a film thickness of 2,500^ was coated with amorphous silicon (4) as a transparent electrode (5).
), the film thickness on the protrusion (7) becomes significantly thinner than the film thickness in other regions. The thickness of the transparent conductive film (5) on the protrusion (7) is 1000 Å or less.
然る後、第２図（ホ）に示すように、各光電変換素子を
分難すべく透明電極（５）をケミカルエツチングする。Thereafter, as shown in FIG. 2(e), the transparent electrode (5) is chemically etched to separate each photoelectric conversion element.
すなわち、突出部（７）上の薄い透明電極（５）をケミ
カルエツチングにより除去する。 従って、光起電力装
置の出力特性の向上のため、透明電極（５）の膜厚を大
幅に厚くしても、エツチング除去する領域は突出部（７
）上の薄い透明電極（５）だけであるので、容易にエツ
チング除去でき、光電変換素子が分難できる。That is, the thin transparent electrode (5) on the protrusion (7) is removed by chemical etching. Therefore, even if the thickness of the transparent electrode (5) is significantly increased in order to improve the output characteristics of the photovoltaic device, the area to be etched away is the protrusion (7).
), it can be easily removed by etching and the photoelectric conversion element can be separated.
（ト）発明の詳細
な説明したように、裏面電極の突出部上の透明電極の膜
厚は、この部分以外の透明電極の膜厚に比べ非常に薄く
なる。従って、透明電極のシート抵抗を小さくし、抵抗
損失を少なくするべく透明電極の膜厚を厚（設定しても
、容易に各光電変換素子が分難でき、光起電力装置の出
力特性の向上が図れる。(g) As described in detail of the invention, the thickness of the transparent electrode on the protrusion of the back electrode is much thinner than the thickness of the transparent electrode on the other parts. Therefore, even if the film thickness of the transparent electrode is set to be thicker in order to reduce the sheet resistance of the transparent electrode and reduce resistance loss, each photoelectric conversion element can be easily separated, improving the output characteristics of the photovoltaic device. can be achieved.
第１図は本発明の一実施例を示す断面図、第２図は本発
明の光起電力装置の製造方法の各工程における断面図、
第３図は従来装置の製造方法の各工程における断面図で
ある。FIG. 1 is a sectional view showing one embodiment of the present invention, FIG. 2 is a sectional view of each step of the method for manufacturing a photovoltaic device of the present invention,
FIG. 3 is a cross-sectional view of each step of a conventional device manufacturing method.
Claims (1)
変換領域、透明電極を順次積層し、基板上に複数の光電
変換素子を形成すると共に、前記複数の光電変換素子を
接続してなる光起電力装置であって、前記裏面電極の各
光電変換素子を分難する領域に突出部を形成したことを
特徴とする光起電力装置。(1) An insulating film, a back electrode, a photoelectric conversion region, and a transparent electrode are sequentially laminated on a flexible conductive substrate, and a plurality of photoelectric conversion elements are formed on the substrate, and the plurality of photoelectric conversion elements are connected. 1. A photovoltaic device comprising: a protruding portion formed in a region of the back electrode that separates each photoelectric conversion element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1206440A JP2755707B2 (en) | 1989-08-09 | 1989-08-09 | Method for manufacturing photovoltaic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1206440A JP2755707B2 (en) | 1989-08-09 | 1989-08-09 | Method for manufacturing photovoltaic device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0370184A true JPH0370184A (en) | 1991-03-26 |
| JP2755707B2 JP2755707B2 (en) | 1998-05-25 |
Family
ID=16523414
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1206440A Expired - Fee Related JP2755707B2 (en) | 1989-08-09 | 1989-08-09 | Method for manufacturing photovoltaic device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2755707B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0534425A3 (en) * | 1991-09-25 | 1993-12-29 | Canon Kk | Photovoltaic device |
| KR100739839B1 (en) * | 2006-09-21 | 2007-07-13 | (주)아이디암 | A long-distance monitoring apparatus for enhancing protection of privacy |
| KR101672909B1 (en) * | 2016-01-13 | 2016-11-04 | 보성흑진주 영어조합법인 | comb pen shell is contained functionality sausage and a method of manufacturing the same |
-
1989
- 1989-08-09 JP JP1206440A patent/JP2755707B2/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0534425A3 (en) * | 1991-09-25 | 1993-12-29 | Canon Kk | Photovoltaic device |
| KR100739839B1 (en) * | 2006-09-21 | 2007-07-13 | (주)아이디암 | A long-distance monitoring apparatus for enhancing protection of privacy |
| KR101672909B1 (en) * | 2016-01-13 | 2016-11-04 | 보성흑진주 영어조합법인 | comb pen shell is contained functionality sausage and a method of manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2755707B2 (en) | 1998-05-25 |
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