JP3208219B2 - Photovoltaic device - Google Patents
Photovoltaic deviceInfo
- Publication number
- JP3208219B2 JP3208219B2 JP10387793A JP10387793A JP3208219B2 JP 3208219 B2 JP3208219 B2 JP 3208219B2 JP 10387793 A JP10387793 A JP 10387793A JP 10387793 A JP10387793 A JP 10387793A JP 3208219 B2 JP3208219 B2 JP 3208219B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- cell
- back electrode
- insulating resin
- transparent electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Photovoltaic Devices (AREA)
Description
【0001】[0001]
【産業上の利用分野】この発明は光起電力装置に関し、
特にたとえば、基板上に、各セル毎に透明電極,半導体
層,第1裏面電極,絶縁樹脂層および第2裏面電極が積
層され、各セル毎に第2裏面電極が第1裏面電極および
半導体層に形成されたスルーホールを通して透明電極に
接続され、各セル毎に分離された第2裏面電極が接続部
において絶縁樹脂層を通して隣接する第1裏面電極に接
続されている、そのようなスルーホールコンタクト(T
HC:Through Hole Contact)型の光起電力装置に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a photovoltaic device,
In particular, for example, a transparent electrode, a semiconductor layer, a first back electrode, an insulating resin layer, and a second back electrode are stacked on a substrate for each cell, and the second back electrode is formed of a first back electrode and a semiconductor layer for each cell. Such a through-hole contact in which the second back electrode separated for each cell is connected to an adjacent first back electrode through an insulating resin layer at a connection portion, through a through hole formed in the substrate. (T
It relates to an HC (Through Hole Contact) type photovoltaic device.
【0002】[0002]
【従来の技術】THC型光起電力装置1は、図6に示す
ように、ガラス基板2上に透明電極3を所定間隔を隔て
て形成し、その上に、たとえばアモルファスシリコンの
ような半導体層4,第1裏面電極5,絶縁樹脂層6およ
び第2裏面電極7を積層してなり、各セル毎にスルーホ
ール8を通して第2裏面電極7が透明電極2に接続さ
れ、接続部9において第2裏面電極7が隣接セルの第1
裏面電極5に接続され、かつ分離部10において第2裏
面電極7が各セル毎に分離されている。2. Description of the Related Art As shown in FIG. 6, a THC type photovoltaic device 1 has transparent electrodes 3 formed on a glass substrate 2 at predetermined intervals, and a semiconductor layer such as amorphous silicon is formed thereon. 4, the first back electrode 5, the insulating resin layer 6, and the second back electrode 7 are laminated, and the second back electrode 7 is connected to the transparent electrode 2 through the through hole 8 for each cell. 2 The back electrode 7 is the first electrode of the adjacent cell.
The second back surface electrode 7 is connected to the back surface electrode 5 and separated in the separation unit 10 for each cell.
【0003】このようなTHC型光起電力装置1を製造
する際、透明電極3,半導体層4および第1裏面電極5
を各セル毎に分離する必要があるが、従来、半導体層4
および第1裏面電極5も、透明電極3と同じセル間分離
部において分離している。When manufacturing such a THC type photovoltaic device 1, the transparent electrode 3, the semiconductor layer 4, and the first back electrode 5
Need to be separated for each cell.
The first back electrode 5 is also separated at the same inter-cell separation part as the transparent electrode 3.
【0004】[0004]
【発明が解決しようとする課題】ところが、このように
半導体層4および第1裏面電極5を透明電極3のパター
ニングラインの中央でセル間分離する従来の構造では、
そのセル間分離部の位置決めが非常に難しく、作業性が
悪かった。それゆえに、この発明の主たる目的は、半導
体層および第1裏面電極のセル間分離の作業性を向上で
きる、光起電力装置を提供することである。However, in the conventional structure in which the semiconductor layer 4 and the first back electrode 5 are separated from each other at the center of the patterning line of the transparent electrode 3 as described above,
The positioning of the inter-cell separation part was very difficult, and the workability was poor. Therefore, a main object of the present invention is to provide a photovoltaic device capable of improving the workability of separating a semiconductor layer and a first back electrode between cells.
【0005】[0005]
【課題を解決するための手段】この発明は、基板上に、
各セル毎に透明電極,半導体層,第1裏面電極,絶縁樹
脂層および第2裏面電極が形成され、各セル毎に第2裏
面電極が第1裏面電極および半導体層に形成されたスル
ーホールを通して透明電極に接続され、各セル毎に分離
された第2裏面電極が接続部において絶縁樹脂層を通し
て隣接セルの第1裏面電極に接続されている、光起電力
装置において、半導体層および第1裏面電極を各セル毎
に分離するためのセル間分離部を透明電極上に配置した
ことを特徴とする、光起電力装置である。According to the present invention, there is provided a semiconductor device comprising:
A transparent electrode, a semiconductor layer, a first back electrode, an insulating resin layer, and a second back electrode are formed for each cell, and a second back electrode is formed for each cell through a through hole formed in the first back electrode and the semiconductor layer. A semiconductor layer and a first back surface in a photovoltaic device, wherein a second back surface electrode connected to a transparent electrode and separated for each cell is connected to a first back surface electrode of an adjacent cell at a connection portion through an insulating resin layer. A photovoltaic device, wherein an inter-cell separating portion for separating an electrode for each cell is disposed on a transparent electrode.
【0006】[0006]
【作用】たとえばガラス基板上に間隔を隔てて透明電極
を形成し、その上に半導体層および第1裏面電極を形成
し、たとえばNd:YAGレーザを用いたレーザパター
ニングによって透明電極上でセル間分離する。For example, a transparent electrode is formed at intervals on a glass substrate, a semiconductor layer and a first back electrode are formed thereon, and the cells are separated on the transparent electrode by laser patterning using, for example, an Nd: YAG laser. I do.
【0007】[0007]
【発明の効果】この発明によれば、透明電極上で半導体
層および第1裏面電極をセル間分離しているため、透明
電極間でこれらをパターニングする場合に比べて、位置
決めが簡単になる。それとともに透明電極はガラス基板
に比べて熱伝導がよいので、このセル間分離部のエッジ
において熱による変形が少なくなる。According to the present invention, since the semiconductor layer and the first back surface electrode are separated between the cells on the transparent electrode, the positioning becomes easier as compared with the case where these are patterned between the transparent electrodes. At the same time, since the transparent electrode has better heat conduction than the glass substrate, deformation at the edge of the inter-cell separation portion due to heat is reduced.
【0008】この発明の上述の目的,その他の目的,特
徴および利点は、図面を参照して行う以下の実施例の詳
細な説明から一層明らかとなろう。The above and other objects, features and advantages of the present invention will become more apparent from the following detailed description of embodiments with reference to the drawings.
【0009】[0009]
【実施例】この発明の一実施例に従ったTHC型光起電
力装置1(図5)は、図1ないし図5に示す各ステップ
を経て製造される。ただし、説明の簡単のために、第2
裏面電極9と透明電極3とのスルーホールコンタクトに
ついては、省略してある。第1のステップとして、図1
に示すように、ガラス基板2上に、所定間隔を隔ててた
とえばSnO2 やITOなどの透明電極3が形成され
る。このような透明電極3は、具体的には、基板2上に
全面に形成した後、たとえばNd:YAGレーザ(波長
=1.06μm、エネルギ密度13J/cm2 、パルス
周波数3kHz)でレーザパターニング(数10μm
幅)することによって形成される。なお、透明電極3の
膜厚は1000〜6000Åである。DESCRIPTION OF THE PREFERRED EMBODIMENTS A THC photovoltaic device 1 (FIG. 5) according to an embodiment of the present invention is manufactured through the steps shown in FIGS. However, for simplicity of explanation, the second
The through-hole contact between the back electrode 9 and the transparent electrode 3 is omitted. As a first step, FIG.
As shown in FIG. 1, a transparent electrode 3 such as SnO 2 or ITO is formed on a glass substrate 2 at a predetermined interval. Specifically, such a transparent electrode 3 is formed on the entire surface of the substrate 2 and then subjected to laser patterning (for example, with a Nd: YAG laser (wavelength = 1.06 μm, energy density 13 J / cm 2 , pulse frequency 3 kHz)). Tens of μm
Width). The transparent electrode 3 has a thickness of 1000 to 6000 °.
【0010】続く第2ステップとして、図2に示すよう
に、透明電極3が形成されたガラス基板2上に、全面に
わたって、たとえば公知のプラズマCVDによって、厚
さ5000〜7000Åのアモルファスシリコンのよう
な半導体層4、および膜厚がたとえば2000〜500
0ÅのたとえばITO−Ag−Tiのような第1裏面電
極5を形成する。As a subsequent second step, as shown in FIG. 2, over the entire surface of the glass substrate 2 on which the transparent electrode 3 has been formed, for example, by a known plasma CVD, a 5000-7000 ° thick amorphous silicon or the like is used. The semiconductor layer 4 has a thickness of, for example, 2000 to 500
A first back electrode 5 of, for example, ITO-Ag-Ti of 0 ° is formed.
【0011】続く第3ステップにおいて、図3に示すよ
うに、半導体層4および第1裏面電極5をセル間分離部
11において分離するために、たとえばNd:YAGレ
ーザのレーザビームの第2高調波によってレーザパター
ニングする。YAGレーザの波長はたとえば0.53μ
mであり、エネルギ密度は0.7J/cm2 、パルス周
波数は4kHzとした。この第3のステップにおいて
は、セル間分離部11を透明電極3上に配置している。
したがって、従来のように透明電極3の間隔でセル間分
離する場合に比べて、あまり厳しいパターニング精度は
要求されない。これは、セル間分離部11が透明電極3
上に配置されていさえすればよく、多少ずれても特性に
影響を及ぼすことがないからである。また、従来の場合
では熱影響のためにきれいなレーザパターニングエッジ
を形成するのが難しかったが、この実施例によれば、透
明電極3の熱伝導度はガラス基板2のそれよりも大きい
ので、不要なレーザエネルギは透明電極3を伝播して逃
げるため、セル間分離部11におけるエッジの仕上がり
がよい。In a subsequent third step, as shown in FIG. 3, in order to separate the semiconductor layer 4 and the first back electrode 5 in the inter-cell separation section 11, for example, a second harmonic of a laser beam of an Nd: YAG laser is used. Laser patterning. The wavelength of the YAG laser is, for example, 0.53 μm.
m, the energy density was 0.7 J / cm 2 , and the pulse frequency was 4 kHz. In the third step, the inter-cell separation section 11 is arranged on the transparent electrode 3.
Therefore, much less strict patterning accuracy is not required as compared with the conventional case where the cells are separated at the intervals of the transparent electrodes 3. This is because the inter-cell separation part 11 has the transparent electrode 3
This is because it suffices if it is arranged on the upper side, and even if it is slightly shifted, it does not affect the characteristics. Further, in the conventional case, it was difficult to form a clean laser patterning edge due to the influence of heat. However, according to this embodiment, since the thermal conductivity of the transparent electrode 3 is larger than that of the glass substrate 2, it is unnecessary. Since the unnecessary laser energy propagates through the transparent electrode 3 and escapes, the edge finish in the inter-cell separation section 11 is good.
【0012】また、第3のステップにおいては、レーザ
ビームが透明電極3にまで達したとしても、レーザビー
ムは透明電極3を通過するので透明電極3がそのYAG
レーザによって損傷を受けることはない。その後、図4
に示す第4ステップにおいて、図3に示す状態からガラ
ス基板2上全面にわたってたとえばポリイミドあるいは
ポリアミドのような有機高分子樹脂によってたとえば膜
厚5000Å〜5μmの絶縁樹脂層6を全面に形成す
る。このとき、スルーホール8の内周面はこの絶縁樹脂
層6によって絶縁される。そして、第1裏面電極5上の
所定の位置にたとえばXeClエキシマレーザのレーザ
パターニングやフォトリソグラフィ技術によって、接続
部9における絶縁樹脂層を除去する。XeClエキシマ
レーザの波長は308nmの短波長である。したがっ
て、絶縁樹脂層6は、熱的ではなく、光子のもつエネル
ギによる化学的作用によって加工され除去される。した
がって、絶縁樹脂層6の下層にある第1裏面電極5や半
導体層4が熱的損傷を受けることはない。また、このと
きのXeClエキシマレーザのエネルギ密度を絶縁樹脂
層6は除去できるがしかし第1裏面電極5は加工されな
い値(たとえば0.3J/cm2 以下)に設定し、か
つ、絶縁樹脂層6の膜厚を除去できるパルス数を照射す
ることで、絶縁樹脂層6の下層に何の損傷を与えること
もなく、接続部9を精度よく加工することができる。In the third step, even if the laser beam reaches the transparent electrode 3, the laser beam passes through the transparent electrode 3, so that the transparent electrode 3
It is not damaged by the laser. Then, FIG.
In the fourth step shown in FIG. 3, an insulating resin layer 6 having a thickness of, for example, 5000 to 5 .mu.m is formed on the entire surface of the glass substrate 2 from the state shown in FIG. At this time, the inner peripheral surface of the through hole 8 is insulated by the insulating resin layer 6. Then, the insulating resin layer in the connection portion 9 is removed at a predetermined position on the first back surface electrode 5 by, for example, laser patterning of XeCl excimer laser or photolithography technique. The wavelength of the XeCl excimer laser is a short wavelength of 308 nm. Therefore, the insulating resin layer 6 is processed and removed not by heat but by a chemical action by the energy of the photons. Therefore, the first back electrode 5 and the semiconductor layer 4 under the insulating resin layer 6 are not thermally damaged. In addition, the energy density of the XeCl excimer laser at this time is set to a value (for example, 0.3 J / cm 2 or less) at which the insulating resin layer 6 can be removed but the first back electrode 5 is not processed. By irradiating a pulse number that can remove the thickness of the insulating resin layer 6, the connecting portion 9 can be accurately processed without causing any damage to the lower layer of the insulating resin layer 6.
【0013】次の第5ステップにおいては、図5に示す
ように、絶縁樹脂層6上に全面にわたって第1裏面電極
5と同じ電極材料からなる膜厚がたとえば2000〜5
000Åの第2裏面電極7を形成した後、分離部10に
おいて第2裏面電極7を各セル毎に分離する。第2裏面
電極7を形成することによって、図示しないスルーホー
ルと同じセル内の透明電極3に接続されるとともに、図
4に示す第4ステップで形成された接続部9を通して、
隣接するセルの第2裏面電極7と第1裏面電極5とが接
続される。そして、分離部10において第2裏面電極7
がセル毎に分離されるので、結局、各セルは横方向に直
列接続されることになる。In the next fifth step, as shown in FIG. 5, the film thickness of the same electrode material as that of the first back electrode 5 is, for example, from 2000 to 5 over the entire surface of the insulating resin layer 6.
After forming the second back electrode 7 of 000 °, the separation unit 10 separates the second back electrode 7 for each cell. By forming the second back surface electrode 7, the through hole (not shown) is connected to the transparent electrode 3 in the same cell as the through hole (not shown), and the connection portion 9 formed in the fourth step shown in FIG.
The second back electrode 7 and the first back electrode 5 of the adjacent cell are connected. Then, in the separation section 10, the second back electrode 7
Are separated for each cell, so that each cell is eventually connected in series in the horizontal direction.
【0014】第5ステップにおいても、XeClエキシ
マレーザによるレーザパターニングを利用できる。この
場合、その波長は308nmとし、そのエネルギ密度は
0.3J/cm2 以上とした。絶縁樹脂層6は、先に第
4ステップで説明したように、光子のもつエネルギによ
る化学的作用により加工されるため、分離部10におい
てXeClエキシマレーザのレーザビームが絶縁樹脂層
6にまで到達しても、その絶縁樹脂層6に熱的損傷を生
じることはない。また、このような短波長レーザは、絶
縁樹脂層6の除去深さまででほとんど全てのエネルギが
吸収されてしまうため、絶縁樹脂層6の膜厚をXeCl
エキシマレーザによる除去深さ以上にすることによっ
て、分離部10において第1裏面電極5にレーザビーム
EBが照射されることはない。したがって、分離部10
において第1裏面電極5やその下層の半導体層4に熱的
損傷が及ぶことがない。In the fifth step, laser patterning using a XeCl excimer laser can be used. In this case, the wavelength was 308 nm, and the energy density was 0.3 J / cm 2 or more. Since the insulating resin layer 6 is processed by the chemical action of the energy of the photons as described in the fourth step, the laser beam of the XeCl excimer laser reaches the insulating resin layer 6 in the separation unit 10. However, the insulating resin layer 6 is not thermally damaged. Further, such a short-wavelength laser absorbs almost all energy up to the depth at which the insulating resin layer 6 is removed.
By setting the removal depth by the excimer laser or more, the first back electrode 5 in the separation unit 10 is not irradiated with the laser beam EB. Therefore, the separation unit 10
In this case, the first back electrode 5 and the semiconductor layer 4 thereunder are not thermally damaged.
【0015】ただし、第5のステップにおいては、従来
公知のメタルマスクによるエッチング技術を用いてもよ
いことはもちろんである。However, in the fifth step, an etching technique using a conventionally known metal mask may be used.
【図1】THC型光起電力装置の製造工程の第1ステッ
プを示す図解図である。FIG. 1 is an illustrative view showing a first step of a manufacturing process of a THC photovoltaic device;
【図2】THC型光起電力装置の製造工程の第2ステッ
プを示す図解図である。FIG. 2 is an illustrative view showing a second step in a manufacturing process of the THC type photovoltaic device;
【図3】THC型光起電力装置の製造工程の第3ステッ
プを示す図解図である。FIG. 3 is an illustrative view showing a third step in a manufacturing process of the THC type photovoltaic device;
【図4】THC型光起電力装置の製造工程の第4ステッ
プを示す図解図である。FIG. 4 is an illustrative view showing a fourth step of the manufacturing process of the THC photovoltaic device;
【図5】THC型光起電力装置の製造工程の第5ステッ
プを示す図解図である。FIG. 5 is an illustrative view showing a fifth step of the manufacturing process of the THC type photovoltaic device;
【図6】この発明の背景となるTHC型光起電力装置の
一例を示す図解図である。FIG. 6 is an illustrative view showing one example of a THC type photovoltaic device serving as a background of the present invention;
1 …光起電力装置 2 …ガラス基板 3 …透明電極 4 …半導体層 5 …絶縁樹脂層 6 …絶縁樹脂層 7 …第2裏面電極 8 …スルーホール 9 …接続部 10 …分離部 11 …セル間分離部 DESCRIPTION OF SYMBOLS 1 ... Photovoltaic device 2 ... Glass substrate 3 ... Transparent electrode 4 ... Semiconductor layer 5 ... Insulating resin layer 6 ... Insulating resin layer 7 ... Second back electrode 8 ... Through hole 9 ... Connection part 10 ... Separation part 11 ... Between cells Separation unit
フロントページの続き (56)参考文献 特開 昭60−149178(JP,A) 特開 昭61−20371(JP,A) 特開 昭63−274183(JP,A) 特開 平3−194975(JP,A) (58)調査した分野(Int.Cl.7,DB名) H01L 31/04 - 31/078 Continuation of the front page (56) References JP-A-60-149178 (JP, A) JP-A-61-20371 (JP, A) JP-A-63-274183 (JP, A) JP-A-3-194975 (JP) , A) (58) Fields investigated (Int. Cl. 7 , DB name) H01L 31/04-31/078
Claims (1)
層,第1裏面電極,絶縁樹脂層および第2裏面電極が形
成され、各セル毎に前記第2裏面電極が前記第1裏面電
極および前記半導体層に形成されたスルーホールを通し
て前記透明電極に接続され、各セル毎に分離された前記
第2裏面電極が接続部において前記絶縁樹脂層を通して
隣接セルの前記第1裏面電極に接続されている、光起電
力装置において、 前記半導体層および前記第1裏面電極を前記各セル毎に
分離するためのセル間分離部を前記透明電極上に配置し
たことを特徴とする、光起電力装置。1. A transparent electrode, a semiconductor layer, a first back electrode, an insulating resin layer and a second back electrode are formed on a substrate for each cell, and the second back electrode is formed on the first back surface for each cell. The second back electrode, which is connected to the transparent electrode through an electrode and a through hole formed in the semiconductor layer and is separated for each cell, is connected to the first back electrode of an adjacent cell through the insulating resin layer at a connection portion. A photovoltaic device, wherein an inter-cell separating portion for separating the semiconductor layer and the first back electrode for each cell is arranged on the transparent electrode. apparatus.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10387793A JP3208219B2 (en) | 1993-04-30 | 1993-04-30 | Photovoltaic device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10387793A JP3208219B2 (en) | 1993-04-30 | 1993-04-30 | Photovoltaic device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH06314806A JPH06314806A (en) | 1994-11-08 |
JP3208219B2 true JP3208219B2 (en) | 2001-09-10 |
Family
ID=14365673
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Application Number | Title | Priority Date | Filing Date |
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JP10387793A Expired - Lifetime JP3208219B2 (en) | 1993-04-30 | 1993-04-30 | Photovoltaic device |
Country Status (1)
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JP (1) | JP3208219B2 (en) |
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1993
- 1993-04-30 JP JP10387793A patent/JP3208219B2/en not_active Expired - Lifetime
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Publication number | Publication date |
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JPH06314806A (en) | 1994-11-08 |
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