JPS5839073A - Amorphous solar battery - Google Patents
Amorphous solar batteryInfo
- Publication number
- JPS5839073A JPS5839073A JP56137329A JP13732981A JPS5839073A JP S5839073 A JPS5839073 A JP S5839073A JP 56137329 A JP56137329 A JP 56137329A JP 13732981 A JP13732981 A JP 13732981A JP S5839073 A JPS5839073 A JP S5839073A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- crack
- lead wire
- amorphous semiconductor
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052751 metal Inorganic materials 0.000 claims abstract description 24
- 239000002184 metal Substances 0.000 claims abstract description 24
- 239000004065 semiconductor Substances 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 18
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims abstract description 17
- 238000003466 welding Methods 0.000 abstract description 3
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract description 2
- 238000005476 soldering Methods 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
- H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
この発明は金属板を基板とするアモルファス太陽電池の
構造に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to the structure of an amorphous solar cell using a metal plate as a substrate.
安価な太陽電池として金属板を基板とするアモルファス
太陽電池が有望視され、研究開発毅：進められている０
第１図は従来のこの種太陽電池の構成を示す断面図でる
る。まず、ステンレス鋼などの銹びにくい金属基板（１
）の上にグロー放電法によリシラン（ｓｉａ４）ガスを
分解してアそルファス半導体層（２）をデポジションす
る。その時にホスフィン（ＰＨａ）またはジポラン（Ｂ
２Ｈ６）ガスを１％程度混合することによって、それぞ
れｎ形またはｐ形のアモルファス半導体層を得るように
して、その伝導形を制御して、連続的にｐ形、１形およ
びｎ形のアモルファス半導体層を積層して図示、アモル
ファス半導体層（２）を形成する。次に、このアモルフ
ァス半導体層（２）の上にインジウム・スズ酸化物（工
ｎｄｉｕｍ−Ｔｉｎ・０ｘｉ４ｅ ： Ｉ Ｔｏ ）を
蒸着して光学的に透明な導電膜（３）を形成する。この
導電膜（３）はアモルファス半導体層（２）の表面側の
電気抵抗を低下させる目的をもっている。最後にアルミ
ニウムなどを蒸着して金属電極（４）および外部リード
線接続のためのポンディングパッド（特に図示せず）を
形成し、この部分に外部リード線（５）を接続する。他
方の外部接続は金属基板（１）に対して行なわれる。Amorphous solar cells, which use metal plates as substrates, are seen as promising as inexpensive solar cells, and research and development efforts are underway.0
FIG. 1 is a sectional view showing the structure of a conventional solar cell of this type. First, start with a rust-resistant metal substrate such as stainless steel (1
), an amorphous semiconductor layer (2) is deposited by decomposing resilane (SIA4) gas by a glow discharge method. At that time, phosphine (PHa) or diporane (B
2H6) By mixing about 1% of gas, an n-type or p-type amorphous semiconductor layer is obtained, and the conductivity type is controlled to continuously form p-type, 1-type, and n-type amorphous semiconductor layers. The layers are stacked to form an amorphous semiconductor layer (2) as shown in the figure. Next, an optically transparent conductive film (3) is formed by depositing indium-tin oxide (ITo) on this amorphous semiconductor layer (2). This conductive film (3) has the purpose of lowering the electrical resistance on the surface side of the amorphous semiconductor layer (2). Finally, aluminum or the like is deposited to form a metal electrode (4) and a bonding pad (not particularly shown) for connecting an external lead wire, and an external lead wire (5) is connected to this portion. The other external connection is made to the metal substrate (1).
ところで、金属基板（１）への外部接続は、金属基板（
１）が製置であるので、安全容易であるが、アモルファ
ス半導体層（３）の表面側の外部リード線（５）の接続
には困難を伴う。すなわち、この外部リード線（５）の
接続は、超音波接続、スポット溶接、半田付けなどによ
るが、それらの作業に伴う熱や、圧力のために、第１図
に示したように金属電極（４）からアモルファス半導体
層（２）に達するクラック（６）が発生することがある
。このように１クランク（６）が発生すると、アモルフ
ァス半導体層（３）の厚さが１ミクロン以下で、極めて
薄いので、電極（４）の金属がクランク（６）を通して
容易に基板（１）Ｋ達し、この太陽電池を短絡させるこ
とになる。つまり、電極への外部リード線（５）の接続
の工程で、太陽電池を破損する危険が大きかった。By the way, the external connection to the metal board (1) is made using the metal board (1).
Since 1) is a prefabricated one, it is safe and easy, but it is difficult to connect the external lead wire (5) on the surface side of the amorphous semiconductor layer (3). That is, the external lead wire (5) is connected by ultrasonic connection, spot welding, soldering, etc., but due to the heat and pressure associated with these operations, metal electrodes ( A crack (6) may occur from 4) to the amorphous semiconductor layer (2). When one crank (6) occurs in this way, since the amorphous semiconductor layer (3) is extremely thin, with a thickness of 1 micron or less, the metal of the electrode (4) easily passes through the crank (6) and passes through the substrate (1) K. This will short-circuit the solar cell. In other words, there was a great risk of damaging the solar cell during the process of connecting the external lead wire (5) to the electrode.
この発明は以上のような点に鑑みてなされたもので、表
面偶の外部リード線をボンディングすべき部位の直下に
金属基板とアモルファス半導体層との間に絶縁膜を設け
るととＫよって、たとえ上述のようなりラックが発生し
ても短絡事故の発生しないアモルファス太陽電池を提供
することを目的としている。This invention has been made in view of the above points. It is an object of the present invention to provide an amorphous solar cell that does not cause a short-circuit accident even if a rack occurs as described above.
第２図はこの発明の一実施例の構成を示す断面図で、第
１図の従来例と同等部分は同一符号で示し、その説明の
重複を避ける。すなわち、この実施例では、金属基板（
１）上にアモルファス半導体層（２）を成長させる前に
、将来表面側外部リード線（５）をボンディングすべき
部位の直下にシリコン酸化膜（７）を形成しておくもの
で、以下そのシリコン酸化膜（７）の上を含めて金属基
板（１）の上にア、モルファス半導体層（２）を形成し
、それ以後の工程は従来例と全く同様である。シリコン
酸化膜（７）は４００℃前後の温度での化学的気相成長
（（！ＶＤ）または近年実用化されつつあるプラズマＯ
ＶＤによってデポジションさせるのが適当である。この
ように１金属基板（１）とアモルファス半導体層（２）
との間のクランク発生の可能性のある部位に堅固衣シリ
コン酸化膜（７）を設けた−ので、たとえ、外部リード
線（５）のボンディングによってクラック（６）が発生
しても、金属電極（４）と金属基板（１）との短絡は阻
止され、素子の破壊は発生しない。このとき、もちろん
アモルファス半導体層（２）内のｐｎ′Ｉｉｉ合はクラ
ック（６）Ｋよって破壊されるが、アモルファス半導体
層（２）自体が非常に高抵抗で６す、このクラック発生
部位は電極金属（４）の影に入っておシ、もともと太陽
電池としての機能に寄与していない部分であるので、全
体として素子機能を損することはない。FIG. 2 is a sectional view showing the configuration of an embodiment of the present invention, and parts equivalent to those of the conventional example of FIG. 1 are designated by the same reference numerals to avoid duplication of explanation. That is, in this example, the metal substrate (
1) Before growing the amorphous semiconductor layer (2) on top, a silicon oxide film (7) is formed directly under the area where the surface-side external lead wire (5) will be bonded in the future. A. An amorphous semiconductor layer (2) is formed on the metal substrate (1) including the oxide film (7), and the subsequent steps are exactly the same as in the conventional example. The silicon oxide film (7) is grown by chemical vapor deposition ((!VD)) at a temperature of around 400°C or by plasma O
It is appropriate to deposit by VD. In this way, one metal substrate (1) and an amorphous semiconductor layer (2)
A solid silicon oxide film (7) is provided in the area where a crack may occur between the metal electrode and the metal electrode. A short circuit between (4) and the metal substrate (1) is prevented, and no damage to the device occurs. At this time, of course, the pn'Iii junction in the amorphous semiconductor layer (2) is destroyed by the crack (6) K, but the amorphous semiconductor layer (2) itself has a very high resistance6, and this crack generation site is located at the electrode. Although it is in the shadow of the metal (4), it is a part that does not originally contribute to the function of the solar cell, so it does not impair the device function as a whole.
上記実施例では、シリコン酸化膜を絶縁膜として用いた
が、プラズマ０ＶＤｉｃよるシリコン窒化膜、または蒸
着した各種絶縁膜でもよく、また、パターニングは全面
に付着させた後に１写真展版技術で不用部分を、エツチ
ングしてもよいし、パターン精度を問わないときＫはマ
スク蒸着法で所要部位に部分的に付着させてもよい。In the above embodiment, a silicon oxide film was used as the insulating film, but a silicon nitride film formed by plasma 0VDic or various types of insulating films deposited by vapor deposition may also be used. Patterning can be done on the entire surface and then use one photo printing technique to remove unnecessary parts. K may be etched, or K may be partially deposited on required portions by mask evaporation when pattern accuracy is not a concern.
以上説明したように、この発ＦＪ４になるアモルファス
太陽電池ではアモルファス半導体層にクラックの発生す
るおそれのある表面側外部リード線のボンディング部位
置下の部分に、そのアモルファス半導体層と金属基板と
の間に絶縁膜を介在させたので、上記クラックが発生し
ても表面電極と金属基板との間の短絡たよる素子の機能
破壊が防止できる。As explained above, in this FJ4 amorphous solar cell, there is a gap between the amorphous semiconductor layer and the metal substrate below the bonding part of the front-side external lead wire, where cracks may occur in the amorphous semiconductor layer. Since the insulating film is interposed between the electrodes, even if the crack occurs, it is possible to prevent functional breakdown of the element due to a short circuit between the surface electrode and the metal substrate.
亦′第１図は従来のアモルファス太陽電池の構成を示す
断面図、第２図はこの発明の一実施例の構成を示す断面
図である０
図において、（１）は金属基板、（２）はアモルファス
半導体層、（３）は透明導電膜、（４）は金属電極、（
５）は外部リード線、（７）は絶縁膜である０なお、図
中同一符号は同一または相当部分を示代理人 葛野信
−（外１名）Furthermore, Fig. 1 is a sectional view showing the structure of a conventional amorphous solar cell, and Fig. 2 is a sectional view showing the structure of an embodiment of the present invention. In the figures, (1) is a metal substrate, (2) is an amorphous semiconductor layer, (3) is a transparent conductive film, (4) is a metal electrode, (
5) is an external lead wire, and (7) is an insulating film.0 Note that the same reference numerals in the drawings indicate the same or equivalent parts.
- (1 other person)
Claims (1)
電膜とを順次形成しその上面の一部に金属電極を介して
外部り′−ド線をボンディングしてなるものにおいて、
上記外部リード線のボンディング部位の直下の部分の上
記金属基板と上記アモルファス半導体層との間に絶縁膜
を介在させたことを特徴とするアモルファス太陽電池。(1) An amorphous semiconductor layer and a transparent conductive film are sequentially formed on a metal substrate, and an external lead wire is bonded to a part of the upper surface via a metal electrode,
An amorphous solar cell characterized in that an insulating film is interposed between the metal substrate and the amorphous semiconductor layer directly below the bonding site of the external lead wire.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56137329A JPS5839073A (en) | 1981-08-31 | 1981-08-31 | Amorphous solar battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56137329A JPS5839073A (en) | 1981-08-31 | 1981-08-31 | Amorphous solar battery |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5839073A true JPS5839073A (en) | 1983-03-07 |
| JPS622713B2 JPS622713B2 (en) | 1987-01-21 |
Family
ID=15196117
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56137329A Granted JPS5839073A (en) | 1981-08-31 | 1981-08-31 | Amorphous solar battery |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5839073A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4590327A (en) * | 1984-09-24 | 1986-05-20 | Energy Conversion Devices, Inc. | Photovoltaic device and method |
| US4633034A (en) * | 1985-02-08 | 1986-12-30 | Energy Conversion Devices, Inc. | Photovoltaic device and method |
| US4776896A (en) * | 1985-11-29 | 1988-10-11 | Fuji Electric Co., Ltd. | Amorphous silicon solar battery |
| US5395457A (en) * | 1992-12-16 | 1995-03-07 | Sanyo Electric Co., Ltd. | Photovoltaic device and method of manufacturing the same |
| EP2086022A1 (en) * | 2008-01-31 | 2009-08-05 | SANYO Electric Co., Ltd. | Solar cell module and method of manufacturing the same |
| WO2011129083A1 (en) * | 2010-04-12 | 2011-10-20 | 富士フイルム株式会社 | Solar cell module and method for manufacturing same |
| WO2011135856A1 (en) * | 2010-04-30 | 2011-11-03 | 富士フイルム株式会社 | Solar cell module |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7110474B2 (en) | 2019-02-28 | 2022-08-01 | 株式会社日立ハイテク | Electrophoresis device capable of independently electrophoresing multiple samples |
-
1981
- 1981-08-31 JP JP56137329A patent/JPS5839073A/en active Granted
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4590327A (en) * | 1984-09-24 | 1986-05-20 | Energy Conversion Devices, Inc. | Photovoltaic device and method |
| US4633034A (en) * | 1985-02-08 | 1986-12-30 | Energy Conversion Devices, Inc. | Photovoltaic device and method |
| US4776896A (en) * | 1985-11-29 | 1988-10-11 | Fuji Electric Co., Ltd. | Amorphous silicon solar battery |
| US5395457A (en) * | 1992-12-16 | 1995-03-07 | Sanyo Electric Co., Ltd. | Photovoltaic device and method of manufacturing the same |
| EP2086022A1 (en) * | 2008-01-31 | 2009-08-05 | SANYO Electric Co., Ltd. | Solar cell module and method of manufacturing the same |
| US8426726B2 (en) | 2008-01-31 | 2013-04-23 | Sanyo Electric Co., Ltd | Solar cell module and method of manufacturing the same |
| WO2011129083A1 (en) * | 2010-04-12 | 2011-10-20 | 富士フイルム株式会社 | Solar cell module and method for manufacturing same |
| WO2011135856A1 (en) * | 2010-04-30 | 2011-11-03 | 富士フイルム株式会社 | Solar cell module |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS622713B2 (en) | 1987-01-21 |
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