JPS6269659A - Manufacture of nonlinear resistance element - Google Patents

Abstract

PURPOSE:To reduce the number of masks by a method wherein a nonlinear resistance film and a metal film which is a line electrode or a column electrode are formed in the same shape substantially. CONSTITUTION:A picture element electrode 2, which is a transparent conductive film such as ITO, is formed selectively on a transparent insulation substrate 1 by a first photomask. Next, a nonlinear resistance film 3 and a metal film 4 of Cr, AI, Au/Cr or the like are deposited in layers successively. The metal layer 4 is formed selectively with a resist 5 used as a mask by a second photomask, and the nonlinear resistance film 3 is formed selectively with the metal film 4 and the resist 5 used as a mask. Since the metal film serving as a line or column electrode and the nonlinear resistance element are formed selectively by the same mask, masking processes can be reduced by one.

Description

DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention relates to a method of manufacturing a nonlinear resistance element that is combined with a liquid crystal to constitute an image display device.

(Summary of the Invention) In a method for manufacturing a nonlinear resistance element, the present invention reduces the number of t-masks by forming a nonlinear resistance film and a metal film whose rows and columns are electrodes in substantially the same shape. It is easy and highly reliable.

(Advanced technology) FIG. 5 (a> (b)) (c) shows a cross-sectional view showing a conventional manufacturing method of a nonlinear resistance element. FIG. 5 (b) is a glass.

A cross-sectional view is shown in which a pixel electrode 2 made of a transparent conductive film manufactured by TOKYO was formed on a transparent P3 edge substrate 1 made of quartz or the like by the first photoetching. Next, as shown in FIG. 5Cb), after laminating the nonlinear resistive film 8, a second photoetching process is performed to form the nonlinear resistive film 8. As shown in FIG. A metal film 4 such as , AI, etc. is laminated by sputtering or the like, and is formed by the eighth photo-etching.

(Problems to be Solved by the Invention) As mentioned above, the disadvantage is that eight mask processes are required to make a nonlinear resistance element, and that if the number of process steps is large, many process defects will occur and the yield will be poor. There is.

(Means for Solving the Problems) The present invention has been made in order to promptly solve the above problems.
The method consists of sequentially stacking films and selectively removing the metal film and the nonlinear resistance film in substantially the same shape using the same mask process.

(Function) As described above, by selectively forming the metal film and the nonlinear resistance film that are the two row or column electrodes in almost the same shape, the number of mask steps can be reduced by one, and defects in the photo process in particular are reduced. Yields are improved, manufacturing costs are reduced, and highly reliable nonlinear resistance elements can be produced.

(Example) FIGS. 1(c) to 1(c) to e) are cross-sectional views showing the order of manufacturing steps of a nonlinear resistance element according to the present invention. On top of the transparent edge substrate 1 made of glass or quartz, a coating of oxide (indium, tin oxide) is applied.
Transparent conductors such as 'Il! Step of selectively forming the pixel electrode 2, which is a film, using a first photomask (Fig. 1 (ω))
, Step of successively laminating the nonlinear resistive film 8 and the metal film 4 of Or, AI, A%10r, etc. (as shown in Figure 1)] The second photomask is used to layer the metal film 4 using the resist 5 as a mask.
(FIG. 1(c)), the nonlinear resistance JN is formed using the metal film 4 and the resist 5 as masks.
FIG. 1 ω), which is made from the process of selectively forming 8 (first retrospective), shows a cross-sectional structural diagram after the process is completed, and a nonlinear resistance element can be formed by two mask processes.

FIG. 2 6) to ω) show another example of a cross-sectional view showing the order of manufacturing steps of the nonlinear resistance element according to the present invention. ), so the details will be omitted. FIG. 2(B) shows that after the metal film 4 is selectively formed using the resist 5 as a mask, heat treatment is performed at 160° C. for minutes in a clean oven, so that the ends of the resist 6 form the metal film 4. FIG. 2 (I3) shows a cross-sectional view extending to the outside from the end of the resistor 5. FIG. As shown in FIG. 2(g), the metal film 4 is formed to be slightly smaller (for example, about 2μ) smaller than the nonlinear resistive film 8, and when used in a liquid crystal display device, etc., one pixel can be measured through the edge of the nonlinear resistive film 8. This is more preferable because it makes it difficult for current to flow between the electrode and the metal film of the row or column electrode.

3) to ω show other examples of cross-sectional views showing the order of manufacturing steps of the nonlinear resistance element according to the present invention. Up to the step in FIG. 3(a), the process shown in FIG. 1 f1. ) to 6i'), so detailed explanation will be omitted. FIG. 3(6) shows the result after the metal film 4 and nonlinear resistance film 8 have been successively etched.

The metal film 4 is again over-etched so that the metal film 4 has a smaller pattern than the nonlinear resistance film 8. When the resist 5 is peeled off, the gold NN 4 is formed to be slightly smaller (for example, about 2 pm) smaller than the nonlinear resistive film 8 as shown in FIG. 3, and the same effect as shown in the example of FIG. 2 can be obtained, which is preferable.

The nonlinear resistance film 8 is made using a plasma OVD device or the like, and is a silicon oxide film, a silicon nitride film, or a silicon oxynitride film with a silicon content higher than the stoichiometric ratio. 0/13: But
A film is used in which the atomic composition ratio N/Ei of nitrogen and silicon is in the range of approximately 0.1 to 1.0.

FIG. 4 shows an example of a perspective view of one pixel of a nonlinear resistance element according to the present invention. On a transparent insulating substrate 1 such as glass,
The pixel electrode 2-6 is a transparent conductive film such as ? , nonlinear resistive film 82 row or column 'WL pole metal film 4
It consists of To manufacture a liquid crystal display device, the liquid crystal must be aligned and then bonded to another glass substrate having one row or column electrode wiring, and then the liquid crystal must be encapsulated. Details are omitted.

(Effects of the Invention) From the above description, it is clear that the method for manufacturing a nonlinear resistance element of the present invention selectively forms the metal film that will become a row or column electrode and the nonlinear resistance element using the same mask. One mask process is required compared to the manufacturing method of resistor elements.
By reducing the number of times, manufacturing costs can be reduced and high yields can be achieved.

[Brief explanation of drawings]

Fig. 1 ω~, ω) are cross-sectional views showing the order of manufacturing steps of a nonlinear resistance element according to the present invention, and Fig. 2 n)~ are sectional views showing the order of manufacturing steps of other embodiments of the present invention. Figure 3 (b) to (f)
is a sectional view showing the manufacturing process order of still another embodiment of the present invention, FIG. 4 is a perspective view of the nonlinear resistance element of the present invention, and FIG. 5 @
-(6) are cross-sectional views of the manufacturing process of a conventional nonlinear resistance element. 10. Substrate 200 pixel electrodes 80. Nonlinear resistance film 4
゜、Metal film 50. Resist or above Applicant: Seiko Electronics Co., Ltd.Second manufacturing of Izumi-shaped 4-dimensional resistance element No. 4!! - Figure 4 AJ J Bako Conventional 11 = glandular resistance element manufacturing process Figure 5

Claims (4)

[Claims] (1) (a) A first step of selectively forming a pixel electrode made of a transparent conductive film on at least an insulating substrate (b) A second step of successively laminating a nonlinear resistance film and a metal film
Step (c), a third step (d) of selectively forming the metal film by photoetching, and a fourth step of selectively forming the nonlinear resistance film in substantially the same shape as the metal film. A method for manufacturing a nonlinear resistance element. (2) A patent for selectively forming a nonlinear resistance film by heat-treating in the fourth step at a temperature at which the resist is deformed after the third step and the edges of the resist expand beyond the edges of the metal film. A method for manufacturing a nonlinear resistance element according to claim 1. (3) In the fourth step, after etching the nonlinear resistance film, the metal film is etched again so that the metal film has a smaller pattern than the nonlinear resistance film. . (4) The method for manufacturing a nonlinear resistance element according to claim 1, wherein the nonlinear resistance film is a silicon oxide film, a silicon nitride film, or a silicon oxynitride film having a silicon content higher than the stoichiometric ratio.